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11. 发明授权

US06548745B2 Italian rye grass and a method of introducing endophytic fungi into an italian rye grass 失效
标题翻译：意大利黑麦草和将内生真菌引入意大利黑麦草的方法
公开(公告)号：US06548745B2
公开(公告)日：2003-04-15
申请号：US09789722
申请日：2001-02-22
申请人： Naoya Hiruma , Satoshi Shinozaki
发明人： Naoya Hiruma , Satoshi Shinozaki
IPC分类号： A01H30000
CPC分类号： A01N63/04 , A01H3/00 , A01H5/12 , Y02A40/15 , Y10S435/911
摘要： To provide an Italian rye grass with excellent characteristics, and in particular, excellent insect resistance and disease resistance, an endophyte, which is a filamentous endophytic fungus living together with a wild plant occurring in nature, is isolated and artificially grown, and made to live symbiotically in Italian rye grass by inoculating and infecting the grass with the artificially grown endophyte.
摘要翻译：为了提供具有优良特性，特别是优异的抗病性和抗病性的意大利黑麦草，与天然发生的野生植物一起生活的丝状内生真菌的内生真菌被分离并人工生长，并使其生活通过用人造生长的内生真菌接种和感染草，在意大利黑麦草中共生。

12. 发明授权

US5914107A Method of introducing an endophytic fungus into rough bluegrass belonging to Poa trivialis and Poa compressa 失效
标题翻译：将内生真菌引入属于Poa trivialis和Poa compressa的粗糙草中的方法
公开(公告)号：US5914107A
公开(公告)日：1999-06-22
申请号：US933755
申请日：1997-09-23
申请人： Naoya Hiruma , Satoshi Shinozaki
发明人： Naoya Hiruma , Satoshi Shinozaki
IPC分类号： A01G1/00 , A01G7/00 , A01H5/12 , A01N63/04 , C12N1/14 , C12R1/645 , A01N63/00 , C12N5/00
CPC分类号： A01N63/04 , A01H5/12
摘要： To provide rough bluegrasses having improved characteristics, and in particular improved insect resistance and disease resistance, an endophyte comprising a filamentous endophytic fungus living in wild plants that exist in nature is isolated and artificially grown, and rough bluegrasses are then inoculated and infected with the artificially grown endophyte so that the endophyte lives symbiotically in the rough bluegrasses. In particular, rough bluegrasses Poa trivialis and Poa compressa and endophytic fungus Acremonium sp. Po-060 (FERM P-15862).
摘要翻译：为了提供具有改善的特性，特别是改进的抗虫性和抗病性的粗糙的早熟禾，包含居住在自然界中存在的野生植物中的丝状内生真菌的内生真菌被分离和人工生长，然后将粗糙的草原接种并人工感染内生真菌，使内生真菌生长在粗糙的草地上。特别是粗糙的草坪草Poa trivialis和Poa compressa和内生真菌Acremonium sp。 Po-060（FERM P-15862）。

13. 发明授权

US5071784A Method of making a semiconductor memory device 失效
标题翻译：制造半导体存储器件的方法
公开(公告)号：US5071784A
公开(公告)日：1991-12-10
申请号：US616387
申请日：1990-11-21
申请人： Yukio Takeuchi , Satoshi Shinozaki
发明人： Yukio Takeuchi , Satoshi Shinozaki
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/105 , H01L27/108
CPC分类号： H01L27/10844 , H01L27/10805 , H01L27/105
摘要： A semiconductor memory device includes a memory cell array comprised of a plurality of memory cells each having a single transfer transistor and a single capacitor and a peripheral circuit including a plurality of drive transistors and adapted to drive the memory cell. The source and drain regions of the transfer transistor have an impurity concentration lower in level than that of the source and drain regions of the drive transistor.

14. 发明授权

US4615104A Method of forming isolation regions containing conductive patterns therein 失效
公开(公告)号：US4615104A
公开(公告)日：1986-10-07
申请号：US738404
申请日：1985-05-28
申请人： Shuichi Kameyama , Satoshi Shinozaki , Hiroshi Iwai
发明人： Shuichi Kameyama , Satoshi Shinozaki , Hiroshi Iwai
IPC分类号： H01L21/762 , H01L21/763 , H01L21/76 , H01L21/88
CPC分类号： H01L21/763 , H01L21/76229 , Y10S148/02 , Y10S148/05 , Y10S148/085
摘要： A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.

15. 发明授权

US4615103A Method of forming isolation regions containing conductive patterns therein 失效
标题翻译：形成其中包含导电图案的隔离区域的方法
公开(公告)号：US4615103A
公开(公告)日：1986-10-07
申请号：US737922
申请日：1985-05-28
申请人： Shuichi Kameyama , Satoshi Shinozaki , Hiroshi Iwai
发明人： Shuichi Kameyama , Satoshi Shinozaki , Hiroshi Iwai
IPC分类号： H01L21/762 , H01L21/763 , H01L21/76 , H01L21/88
CPC分类号： H01L21/763 , H01L21/76229 , Y10S148/02 , Y10S148/05 , Y10S148/085
摘要： A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.

16. 发明授权

US4371423A Method of manufacturing semiconductor device utilizing a lift-off technique 失效
标题翻译：利用剥离技术制造半导体器件的方法
公开(公告)号：US4371423A
公开(公告)日：1983-02-01
申请号：US183813
申请日：1980-09-03
申请人： Rokuro Yoshizawa , Satoshi Shinozaki
发明人： Rokuro Yoshizawa , Satoshi Shinozaki
IPC分类号： H01L21/033 , H01L21/768 , H01L21/283 , H01L21/308
CPC分类号： H01L21/7688 , H01L21/033
摘要： A method of manufacturing a semiconductor device comprising a step of covering a principal surface of a semiconductor substrate having semiconductor regions formed therein and at least partly provided with a silicon oxide film with a cover film having an etching characteristic different from that of the oxide film, a step of forming a first deposition layer having a higher etching speed than that of the cover layer on the cover layer, a step of forming a second deposition layer having a lower etching speed than that of the first deposition layer on the first deposition layer, a step of etching away portions of the second and first deposition layers and cover layer corresponding to a wiring pattern in succession, a step of etching the exposed portions of the silicon oxide film with the cover layer having the openings as a mask to thereby form contact holes with respect to the semiconductor substrate, and a step of forming wiring leads by depositing a wiring metal and etching away the first deposition layer and thus lifting off the second deposition layer and wiring metal portions thereon.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：覆盖其中形成有半导体区域的半导体衬底的主表面，并且至少部分地设置氧化硅膜，所述半导体衬底具有与所述氧化膜的刻蚀特性不同的蚀刻特性的覆盖膜，形成具有比覆盖层上的覆盖层的蚀刻速度更高的蚀刻速度的第一沉积层的步骤，在第一沉积层上形成具有比第一沉积层的蚀刻速度低的蚀刻速度的第二沉积层的步骤，对相应于布线图案的第二和第一沉积层和覆盖层的部分进行连续蚀刻的步骤，用具有开口的覆盖层作为掩模蚀刻氧化硅膜的暴露部分从而形成接触的步骤相对于半导体衬底的孔，以及通过沉积布线金属并蚀刻掉形成布线引线的步骤从而提升第二沉积层和其上的布线金属部分。

17. 发明授权

US08128978B2 Method for preventing off-flavor in beverage composition 失效
标题翻译：饮料组合物中防止异味的方法
公开(公告)号：US08128978B2
公开(公告)日：2012-03-06
申请号：US11921902
申请日：2006-06-09
申请人： Satoshi Shinozaki , Toshimasa Higuchi , Ryoko Ishikawa
发明人： Satoshi Shinozaki , Toshimasa Higuchi , Ryoko Ishikawa
IPC分类号： A23L1/29 , A23L2/66
CPC分类号： A23L2/66 , A23L2/44 , A23L2/52 , A23L2/68 , A23L33/15 , A23L33/175 , A23L33/18 , A23V2002/00 , A23V2250/7044 , A23V2250/708 , A23V2250/06 , A23V2250/54246
摘要： A beverage composition is disclosed that comprises a mixture of a protein hydrolysate and vitamin B2, and also contains an amount of ascorbic acid sufficient to prevent the generation of an off-flavor when the mixture is exposed to light. The off-flavor generated upon exposure to light can be reduced in accordance with the beverage composition of the present invention. Also disclosed is a method for preventing an off-flavor in a beverage composition containing a protein hydrolysate and vitamin B2, and a process for producing a beverage composition containing a protein hydrolysate and vitamin B2. Furthermore, an agent for preventing an off-flavor in a beverage composition containing a protein hydrolysate and vitamin B2, wherein the agent comprises ascorbic acid as an active ingredient is disclosed.
摘要翻译：公开了包含蛋白质水解物和维生素B2的混合物的饮料组合物，并且还含有足以防止混合物暴露于光时产生异味的抗坏血酸的量。根据本发明的饮料组合物可以减少暴露在光下产生的异味。还公开了一种防止含有蛋白质水解物和维生素B2的饮料组合物中的异味的方法，以及含有蛋白质水解产物和维生素B2的饮料组合物的制备方法。此外，公开了一种用于防止含有蛋白质水解物和维生素B2的饮料组合物中的异味的试剂，其中该试剂包含抗坏血酸作为活性成分。

18. 发明申请

US20080207451A1 Method of introducing symbiotic fungus into plant 有权
标题翻译：将共生真菌引入植物的方法
公开(公告)号：US20080207451A1
公开(公告)日：2008-08-28
申请号：US12073482
申请日：2008-03-06
申请人： Takahiro Imada , Naoya Hiruma , Yousuke Kurihara , Satoshi Shinozaki , Miho Shimaike , Junya Mizutani
发明人： Takahiro Imada , Naoya Hiruma , Yousuke Kurihara , Satoshi Shinozaki , Miho Shimaike , Junya Mizutani
IPC分类号： A01N63/04 , A01P21/00 , A01P15/00
CPC分类号： C12R1/645 , A01N63/04 , C12N1/14 , Y02A40/15
摘要： A method of introducing a symbiotic fungus producing one chanoclavine as a final metabolic product into a plant, includes the steps of isolating symbiotic fungi from naturally existing plants, artificially cultivating the isolated symbiotic fungi, introducing the cultivated symbiotic fungi into target plants, infecting the target plants with the introduced symbiotic fungi, determining whether the introduced symbiotic fungi infecting the target plants produce the chanoclavine as the final metabolic product, and selecting the target plants which produce the chanoclavine as the final metabolic product.
摘要翻译：将产生一种chanoclavine作为最终代谢产物的共生真菌引入植物中的方法包括从天然存在的植物中分离共生真菌的步骤，人工培养分离的共生真菌，将培养的共生真菌引入靶植物，感染靶植物与引入的共生真菌，确定引入的感染目标植物的共生真菌是否产生chanoclavine作为最终的代谢产物，以及选择产生chanoclavine作为最终代谢产物的目标植物。

19. 发明申请

US20050161730A1 Non-volatile semiconductor memory and method of manufacturing the same 审中-公开
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US20050161730A1
公开(公告)日：2005-07-28
申请号：US11080652
申请日：2005-03-16
申请人： Satoshi Shinozaki , Mitsuteru Iijima , Hideo Kurihara
发明人： Satoshi Shinozaki , Mitsuteru Iijima , Hideo Kurihara
IPC分类号： H01L21/8247 , H01L21/8246 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/66833 , H01L29/7887 , H01L29/7923
摘要： A proposed non-volatile semiconductor memory and a method of manufacturing the same are directed to performing stable and highly reliable operations. First, grooves are formed in a p-type silicon semiconductor substrate, and impurity diffusion layers are formed on the bottom surfaces of the grooves. A gate insulating film is then formed on the p-type silicon semiconductor substrate. This gate insulating film has a three-layer structure in which a first insulating film made of a silicon oxide film, a charge capturing film made of a silicon nitride film, and a second insulating film made of a silicon oxide film, are laminated in this order. A gate electrode is then formed on the gate insulating film. A convexity formed by the grooves serves as the channel region of the non-volatile semiconductor memory. Even if the device size is reduced, an effective channel length can be secured in this non-volatile semiconductor memory. Thus, excellent stability and reliability can be achieved.
摘要翻译：提出的非易失性半导体存储器及其制造方法旨在执行稳定且高可靠性的操作。首先，在p型硅半导体衬底中形成凹槽，并且在凹槽的底表面上形成杂质扩散层。然后在p型硅半导体衬底上形成栅极绝缘膜。该栅极绝缘膜具有三层结构，其中由氧化硅膜制成的第一绝缘膜，由氮化硅膜制成的电荷捕获膜和由氧化硅膜制成的第二绝缘膜层叠在该层中订购。然后在栅极绝缘膜上形成栅电极。由凹槽形成的凸起用作非易失性半导体存储器的沟道区域。即使器件尺寸减小，也可以在该非易失性半导体存储器中确保有效的沟道长度。因此，可以实现优异的稳定性和可靠性。

20. 发明授权

US5880343A Grass and method of introducing endophytic fungi into a grass 失效
标题翻译：将内生真菌引入草地的草和方法
公开(公告)号：US5880343A
公开(公告)日：1999-03-09
申请号：US661774
申请日：1996-06-11
申请人： Naoya Hiruma , Satoshi Shinozaki
发明人： Naoya Hiruma , Satoshi Shinozaki
IPC分类号： A01N63/04 , A01H17/00 , A01H1/00 , A01H5/00
CPC分类号： A01N63/04
摘要： To provide a grass having improved characteristics, an endophyte having endophytic fungi which produce an insect-resistant alkaloid is artificially introduced into a grass by inoculation so that the endophyte lives in and infects the grass.
摘要翻译：为了提供具有改善特征的草，具有产生抗虫生物碱的内生真菌的内生真菌通过接种被人工引入草中，使得内生真菌生活并感染草。

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