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11. 发明授权

US08741773B2 Nickel-silicide formation with differential Pt composition 有权
标题翻译：具有差异Pt组成的硅化镍形成
公开(公告)号：US08741773B2
公开(公告)日：2014-06-03
申请号：US12684144
申请日：2010-01-08
申请人： Asa Frye , Andrew Simon
发明人： Asa Frye , Andrew Simon
IPC分类号： H01L29/78
CPC分类号： H01L21/28518 , H01L29/665
摘要： Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region of a field-effect-transistor (FET) through a physical vapor deposition (PVD) process, wherein the first metal layer is deposited using a first nickel target material containing platinum (Pt), and the second metal layer is deposited on top of the first metal layer using a second nickel target material containing no or less platinum than that in the first nickel target material; and annealing the first and second metal layers covering the FET to form a platinum-containing nickel-silicide layer at a top surface of the gate, source, and drain regions.
摘要翻译：本发明的实施例提供一种形成硅化镍的方法。该方法可以包括通过物理气相沉积（PVD）工艺在场效应晶体管（FET）的栅极，源极和漏极区域中的至少一个上沉积第一和第二金属层，其中第一金属层使用含有铂（Pt）的第一镍靶材料沉积，并且使用不比第一镍靶材料中不含铂的第二镍靶材料将第二金属层沉积在第一金属层的顶部上; 以及退火覆盖所述FET的所述第一和第二金属层，以在所述栅极，源极和漏极区域的顶表面处形成含铂的硅化镍层。

12. 发明授权

US07704876B2 Dual damascene interconnect structures having different materials for line and via conductors 有权
标题翻译：双镶嵌互连结构具有不同的材料用于线路和通孔导体
公开(公告)号：US07704876B2
公开(公告)日：2010-04-27
申请号：US11847657
申请日：2007-08-30
申请人： Jeffrey Gambino , Edward Cooney, III , Anthony Stamper , William Thomas Motsiff , Michael Lane , Andrew Simon
发明人： Jeffrey Gambino , Edward Cooney, III , Anthony Stamper , William Thomas Motsiff , Michael Lane , Andrew Simon
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
摘要翻译：公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

13. 发明授权

US07300867B2 Dual damascene interconnect structures having different materials for line and via conductors 失效
标题翻译：双镶嵌互连结构具有不同的材料用于线路和通孔导体
公开(公告)号：US07300867B2
公开(公告)日：2007-11-27
申请号：US11174985
申请日：2005-07-05
申请人： Jeffrey Gambino , Edward Cooney, III , Anthony Stamper , William Thomas Motsiff , Michael Lane , Andrew Simon
发明人： Jeffrey Gambino , Edward Cooney, III , Anthony Stamper , William Thomas Motsiff , Michael Lane , Andrew Simon
IPC分类号： H01L21/4763
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods are disclosed for forming dual damascene back-end-of-line (BEOL) interconnect structures using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
摘要翻译：公开了用于形成双镶嵌后端（BEOL）互连结构的方法，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

14. 发明授权

US06958540B2 Dual damascene interconnect structures having different materials for line and via conductors 有权
标题翻译：双镶嵌互连结构具有不同的材料用于线路和通孔导体
公开(公告)号：US06958540B2
公开(公告)日：2005-10-25
申请号：US10604026
申请日：2003-06-23
申请人： Jeffrey Gambino , Edward Cooney, III , Anthony Stamper , William Thomas Motsiff , Michael Lane , Andrew Simon
发明人： Jeffrey Gambino , Edward Cooney, III , Anthony Stamper , William Thomas Motsiff , Michael Lane , Andrew Simon
IPC分类号： H01L21/768 , H01L23/42 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures are disclosed for forming dual damascene back-end-of-line (BEOL) structure using materials for the vias or studs which are different from those used for the line conductors, or using materials for the via liner which are different from those used for the trench liner, or having a via liner thickness different from that of the trench liner. Preferably, a thick refractory metal is used in the vias for improved mechanical strength while using only a thin refractory metal in the trenches to provide low resistance.
摘要翻译：公开了用于形成双镶嵌后端（BEOL）结构的互连结构，其使用与用于线路导体的那些不同的通孔或螺柱的材料，或者使用不同于所使用的通孔衬垫的材料用于沟槽衬垫，或者具有不同于沟槽衬套的通孔衬垫厚度。优选地，在通孔中使用厚的难熔金属以改善机械强度，同时仅在沟槽中使用薄的难熔金属来提供低电阻。

15. 发明申请

US20050112862A1 Crystallographic Modification of Hard mask Properties 失效
标题翻译：硬掩模性能的晶体学修改
公开(公告)号：US20050112862A1
公开(公告)日：2005-05-26
申请号：US10707119
申请日：2003-11-21
申请人： Lawrence Clevenger , Andrew Cowley , Timothy Dalton , Mark Hoinkis , Steffen Kaldor , Kaushik Kumar , Stephen Rossnagel , Andrew Simon , Douglas La Tulipe
发明人： Lawrence Clevenger , Andrew Cowley , Timothy Dalton , Mark Hoinkis , Steffen Kaldor , Kaushik Kumar , Stephen Rossnagel , Andrew Simon , Douglas La Tulipe
IPC分类号： G03F9/00 , H01L21/033 , H01L21/285 , H01L21/4763 , H01L21/768 , H01L23/544
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L21/0332 , H01L21/0337 , H01L21/2855 , H01L21/76841 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A hardmask layer in the back end of an integrated circuit is formed from TaN having a composition of less than 50% Ta and a resistivity greater than 400 μOhm-cm, so that it is substantially transparent in the visible and permits visual alignment of upper and lower alignment marks through the hardmask and intervening layer(s) of ILD. A preferred method of formation of the hardmask is by sputter deposition of Ta in an ambient containing N2 and a flow rate such that (N2 flow)/(N2+carrier flow)>0.5.
摘要翻译：集成电路后端的硬掩模层由具有小于50％Ta且电阻率大于400μΩ·cm的组成的TaN形成，使得其在可见光中基本上是透明的并且允许上和通过硬掩模和ILD的中间层降低对准标记。形成硬掩模的优选方法是通过在含有N 2 O 2的环境中溅射沉积Ta并使流速使得（N 2 N 2 O 2）/（N _{2 +载体流）> 0.5。}

16. 发明授权

US08637925B2 Nickel-silicide formation with differential Pt composition 有权
公开(公告)号：US08637925B2
公开(公告)日：2014-01-28
申请号：US13408246
申请日：2012-02-29
申请人： Asa Frye , Andrew Simon
发明人： Asa Frye , Andrew Simon
IPC分类号： H01L29/76
CPC分类号： H01L21/28518 , H01L29/665
摘要： Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region of a field-effect-transistor (FET) through a physical vapor deposition (PVD) process, wherein the first metal layer is deposited using a first nickel target material containing platinum (Pt), and the second metal layer is deposited on top of the first metal layer using a second nickel target material containing no or less platinum than that in the first nickel target material; and annealing the first and second metal layers covering the FET to form a platinum-containing nickel-silicide layer at a top surface of the gate, source, and drain regions.

17. 发明申请

US20060292852A1 BACK END INTERCONNECT WITH A SHAPED INTERFACE 失效
标题翻译：后端互连与形状接口
公开(公告)号：US20060292852A1
公开(公告)日：2006-12-28
申请号：US11463447
申请日：2006-08-09
申请人： Lawrence Clevenger , Andrew Cowley , Timothy Dalton , Mark Hoinkis , Steffen Kaldor , Erdem Kaltalioglu , Kaushik Kumar , Douglas La Tulipe , Jochen Schacht , Andrew Simon , Terry Spooner , Yun-Yu Wang , Clement Wann , Chih-Chao Yang
发明人： Lawrence Clevenger , Andrew Cowley , Timothy Dalton , Mark Hoinkis , Steffen Kaldor , Erdem Kaltalioglu , Kaushik Kumar , Douglas La Tulipe , Jochen Schacht , Andrew Simon , Terry Spooner , Yun-Yu Wang , Clement Wann , Chih-Chao Yang
IPC分类号： H01L21/4763
CPC分类号： H01L21/76844 , H01L21/76805 , H01L21/76807 , H01L21/76814 , H01L21/76846 , H01L23/5226 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure in the back end of the line of an integrated circuit forms contacts between successive layers by removing material in the top surface of the lower interconnect in a cone-shaped aperture, the removal process extending through the liner of the upper aperture, and depositing a second liner extending down into the cone-shaped aperture, thereby increasing the mechanical strength of the contact, which then enhance the overall reliability of the integrated circuit.
摘要翻译：在集成电路的线的后端中的互连结构通过在锥形孔中去除下互连的顶表面中的材料而形成连续层之间的接触，该去除过程延伸穿过上孔的衬垫，以及沉积向下延伸到锥形孔中的第二衬垫，从而增加接触件的机械强度，从而提高集成电路的整体可靠性。

18. 发明授权

US06380628B2 Microstructure liner having improved adhesion 失效
标题翻译：显微组织衬垫具有改进的粘合性
公开(公告)号：US06380628B2
公开(公告)日：2002-04-30
申请号：US09377329
申请日：1999-08-18
申请人： John A. Miller , Andrew Simon , Jill Slattery , Cyprian E. Uzoh , Yun-Yu Wang
发明人： John A. Miller , Andrew Simon , Jill Slattery , Cyprian E. Uzoh , Yun-Yu Wang
IPC分类号： H01L2348
CPC分类号： H01L21/76862 , H01L21/76816 , H01L21/76843 , H01L21/76865 , H01L21/76871
摘要： A damascene structure, such as a conductive line or via, having a liner with a roughened surface between the substrate and the conductive fill and, preferably, a smooth bottom. The substrate underneath the liner may also have a roughened sidewall and smooth bottom. Such a structure provides enhanced adhesion between one or more layers of the damascene structure. The damascene structure may be manufactured by applying a photoresist over a substrate top surface, exposing the photoresist under conditions that create a standing wave in the resist, and developing the photoresist to provide a pattern having the desired roughened or serrated outline. The pattern is transferred into the substrate, the liner is applied over the substrate bottom and sidewalls, and the liner is filled with conductive material. A roughened liner surface may be achieved by applying a partial layer of liner material over the substrate, removing a portion of the partial layer, and repeating the application and removal steps.
摘要翻译：具有在衬底和导电填料之间具有粗糙表面的衬垫，以及优选光滑底部的镶嵌结构，例如导电线或通孔。衬垫下面的衬底也可以具有粗糙的侧壁和光滑的底部。这种结构提供了镶嵌结构的一层或多层之间增强的附着力。镶嵌结构可以通过在衬底顶表面上施加光致抗蚀剂来制造，在在抗蚀剂中产生驻波的条件下曝光光致抗蚀剂，以及显影光致抗蚀剂以提供具有期望的粗糙化或锯齿形轮廓的图案。将图案转移到衬底中，将衬垫施加在衬底底部和侧壁上，并且衬垫填充有导电材料。可以通过在衬底上施加部分衬里材料层，去除部分层的一部分并重复施加和去除步骤来实现粗糙化衬里表面。

19. 发明授权

US4323398A Performing maintenance operations on heat exchanger tube bundles 失效
标题翻译：在热交换器管束上进行维护操作
公开(公告)号：US4323398A
公开(公告)日：1982-04-06
申请号：US137965
申请日：1980-04-07
申请人： Andrew Simon
发明人： Andrew Simon
IPC分类号： F28G15/02 , B08B7/04
CPC分类号： F28G15/02 , B23P19/024
摘要： The tube bundle is moved out of its shell utilizing a frame structure having a number of movable trollies associated therewith for supporting the tube bundle at spaced points along the length thereof, the trollies having rollers disposed on opposite sides of the central axis of the tube bundle. The tube bundle supported by the trollies is horizontally moved off of the frame structure by rolling the trollies off of the frame structure, preferably onto a protector, and then can be moved to desired maintenance stations. The trollies are latched into place on the protector for movement from station to station. The tube bundle can be transferred from the trollies to a second set of trollies for effecting rotation of the tube bundle about its central axis at the same time that washing fluid is sprayed thereon, and the tube bundle while supported by the trollies may be moved off the protector into an automated cleaning system. Interlocks may be provided preventing movement of the protector without the carriages being properly latched in place.
摘要翻译：使用具有与其相关联的多个可动绞车的框架结构将管束移出其外壳，用于在沿其长度的间隔点处支撑管束，绞车具有设置在管束的中心轴线的相对侧上的辊。由绞盘支撑的管束通过将骨架从框架结构中滚动而优选地保护器水平地从框架结构移出，然后可以移动到期望的维护站。保护器上的电动龙头被锁定在从站到站的运动中。管束可以从龙卷风传递到第二组涡卷，用于在洗涤流体被喷射到其上的同时在管束绕其中心轴线旋转的同时旋转，并且由束轮支撑的管束可以被移走保护器进入自动清洗系统。可以提供互锁以防止保护器的运动，而不将托架适当地锁定就位。

20. 发明申请

US20130020347A1 Strip Dispenser 审中-公开
标题翻译：剥线器
公开(公告)号：US20130020347A1
公开(公告)日：2013-01-24
申请号：US13491811
申请日：2012-06-08
申请人： Christopher Gieda , David Honan , Nathan Rollins , Michael Price , Andrew Simon , Shane Yellin
发明人： Christopher Gieda , David Honan , Nathan Rollins , Michael Price , Andrew Simon , Shane Yellin
IPC分类号： B65D83/08
CPC分类号： B65D83/0847 , B65D83/0876 , G01N33/4875
摘要： A strip dispenser (70) for dispensing one strip (S) from a plurality of strips (S). The strip dispenser (70) includes a container (2) that is constructed and arranged to hold a number of strips (S). There is a first structure (3) that defines one or more thin slots (8) that are generally parallel to the perimeter of the container (2), and that have a smallest dimension that is greater than the smallest dimension of a strip (S), where the slots (8) are configured and arranged to inhibit two strips that are stuck together back to back from passing through the slot (8) together. There is also a strip sorting structure (4) that inhibits a strip (S) that has at least partially passed through a slot (8) from fully leaving the container (2) until the strip (S) is pulled out of the container (2) by the user.
摘要翻译：一种带状分配器（70），用于从多个条带（S）分配一个条带（S）。条带式分配器（70）包括容器（2），其被构造和布置成容纳多个条带（S）。存在限定一个或多个薄的狭槽（8）的第一结构（3），其大致平行于容器（2）的周边，并且具有大于带材的最小尺寸的最小尺寸（S ），其中所述狭槽（8）被配置和布置成禁止两个条带背靠背地粘合在一起通过所述狭槽（8）。还有一种条带分类结构（4），其阻止至少部分地穿过狭槽（8）的条带（S）完全离开容器（2）直到条带（S）从容器中拉出（ 2）由用户。

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