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11. 发明授权

US07129107B2 Process for producing a semiconductor light-emitting device 失效
公开(公告)号：US07129107B2
公开(公告)日：2006-10-31
申请号：US11096381
申请日：2005-03-31
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata , Tomoyuki Kikutani
IPC分类号： H01L29/20 , H01L31/036
CPC分类号： H01L33/24 , H01L21/02381 , H01L21/02395 , H01L21/02409 , H01L21/02411 , H01L21/02521 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0256 , H01L21/02562 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L33/007 , H01L33/0075 , H01L33/32 , H01L2224/48137 , H01L2224/48139
摘要： Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

12. 发明授权

US07087932B2 Semiconductor light-emitting device and semiconductor light-emitting device 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：US07087932B2
公开(公告)日：2006-08-08
申请号：US10088463
申请日：2001-07-18
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L29/04
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L33/007 , H01L33/08
摘要： A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.
摘要翻译：提供具有不使制造工艺复杂化的结构的半导体发光元件，可以高精度地形成，并且不会引起结晶性的劣化。形成发光元件，其包括通过选择性地生长纤锌矿型化合物半导体，第一导电类型的包覆层，有源层和第二导电类型的覆盖层而形成的选择性晶体生长层，其中形成在选择性晶体生长层上，其中形成有源层使得有源层平行于不同的晶面延伸，活性层的尺寸大于混晶的构成原子的扩散长度，或活性层的活性层层的组成和厚度中的至少一个具有差异，由此形成具有多个发光波长彼此不同的发光波长区域的有源层。元件被布置成使得电流或电流可以充电到多个发光波长区域中。由于基于选择性增长的结构，带隙能量在相同的有源层内变化，从而以高精度形成元件或器件而不会使制造过程复杂化。

13. 发明申请

US20060169997A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20060169997A1
公开(公告)日：2006-08-03
申请号：US11329589
申请日：2006-01-10
申请人： Jun Suzuki , Masato Doi , Hiroyuki Okuyama , Goshi Biwa
发明人： Jun Suzuki , Masato Doi , Hiroyuki Okuyama , Goshi Biwa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , Y10S257/918
摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.
摘要翻译：提供了一种半导体发光器件。半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

14. 发明授权

US07002183B2 Semiconductor light emitting device having a semiconductor layer formed by selective growth 失效
标题翻译：具有通过选择性生长形成的半导体层的半导体发光器件
公开(公告)号：US07002183B2
公开(公告)日：2006-02-21
申请号：US11077452
申请日：2005-03-09
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01J63/04 , H01J63/06 , H01S5/227 , H01S5/2272 , H01S5/32341
摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.
摘要翻译：提供半导体发光器件。半导体发光器件包括基体，具有条形开口部分的选择掩模，形成在基体上的选择掩模，通过从开口部分选择性地生长形成的半导体层，大致平行于开口部分的长边的脊线，以及形成在半导体层上的第一导电型包覆层，有源层和第二导电型包覆层。

15. 发明申请

US20050161661A1 Semiconductor light emitting device 失效
公开(公告)号：US20050161661A1
公开(公告)日：2005-07-28
申请号：US11077452
申请日：2005-03-09
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： G09F9/33 , H01L33/08 , H01L33/24 , H01L33/32 , H01L33/36 , H01S5/042 , H01S5/227 , H01S5/323 , H01S5/40 , H01L29/06
CPC分类号： H01L33/24 , H01J63/04 , H01J63/06 , H01S5/227 , H01S5/2272 , H01S5/32341
摘要： Semiconductor light emitting devices are provided. The semiconductor light emitting device includes a base body, a selection mask having a stripe-shaped opening portion, the selection mask being formed on the base body, a semiconductor layer formed by selective growth from the opening portion in such a manner as to have a ridge line substantially parallel to long-sides of the opening portion, and a first conductive type cladding layer, an active layer, and a second conductive type cladding layer, which are formed on the semiconductor layer.

16. 发明申请

US20050145865A1 Semiconductor light emitting element and method for manufacturing same, integrated semiconductor light-emitting device and method for manufacturing same, image display and method for manufacturing same, and illuminating device and method for manufacturing same 失效
标题翻译：半导体发光元件及其制造方法，集成半导体发光器件及其制造方法，图像显示及其制造方法以及照明装置及其制造方法
公开(公告)号：US20050145865A1
公开(公告)日：2005-07-07
申请号：US10512131
申请日：2004-02-19
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Jun Suzuki , Toyoharu Oohata
IPC分类号： C23C16/34 , C02F1/24 , H01L21/28 , H01L33/08 , H01L33/16 , H01L33/32 , H01L33/00
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24 , H01L33/32 , H01L2224/48137
摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.
摘要翻译：提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成的蓝宝石衬底由不同的倾斜角度整体呈现凸面。在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。此后，形成p侧电极和n侧电极。

17. 发明申请

US20050045894A1 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050045894A1
公开(公告)日：2005-03-03
申请号：US10962025
申请日：2004-10-08
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L21/205 , H01L33/16 , H01L33/24 , H01L33/32 , H01S5/323 , H01L33/00
CPC分类号： H01L33/24
摘要： Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.
摘要翻译：提供半导体发光器件及其制造方法。半导体发光器件包括具有包括由例如纤锌矿化合物构成的高差部分的表面的衬底。晶体生长层形成在衬底表面中，其中至少一部分相对于衬底的主平面沿倾斜平面取向。该半导体器件包括以层叠的方式形成在晶体层上并沿倾斜位置定向的第一导电层，有源层和第二导电层。

18. 发明授权

US06831937B2 Method of fabricating semiconductor laser device and semiconductor laser device 失效
标题翻译：制造半导体激光器件和半导体激光器件的方法
公开(公告)号：US06831937B2
公开(公告)日：2004-12-14
申请号：US10210382
申请日：2002-07-31
申请人： Masato Doi , Toyoharu Oohata
发明人： Masato Doi , Toyoharu Oohata
IPC分类号： H01S500
CPC分类号： H01S5/2201 , H01S5/0202 , H01S5/0203 , H01S5/0213 , H01S5/0217 , H01S5/0422 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A method of fabricating a semiconductor laser device includes the steps of forming semiconductor layers composed of a first conductive type cladding layer, an active layer, and a second conductive type cladding layer on a substrate, and peeling a device formation region of the semiconductor layers from the substrate and simultaneously forming a resonance mirror on an end portion of the device formation region by irradiating the device formation region with energy beams traveling from the back surface side of the substrate. With this configuration, it is possible to peel a device from a substrate and also form a flat resonance mirror with less damage of crystal by laser abrasion, and further to easily form a high quality resonance mirror without increasing the number of fabrication steps.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：在衬底上形成由第一导电型包覆层，有源层和第二导电型包覆层构成的半导体层，并将半导体层的器件形成区域从并且通过从衬底的背面侧行进的能量束照射器件形成区域，同时在器件形成区域的端部上形成共振反射镜。通过这种构造，可以从基板剥离器件，并且还可以通过激光磨损形成具有较少的晶体损伤的平坦共振镜，并且进一步容易地形成高质量的谐振镜而不增加制造步骤的数量。

19. 发明授权

US06828591B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06828591B2
公开(公告)日：2004-12-07
申请号：US10024883
申请日：2001-12-17
申请人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
发明人： Hiroyuki Okuyama , Masato Doi , Goshi Biwa , Toyoharu Oohata
IPC分类号： H01L3300
CPC分类号： H01L33/24
摘要： Semiconductor light emitting devices and methods of producing same are provided. The semiconductor light emitting devices include a substrate that has a surface including a difference-in-height portion composed of, for example, a wurtzite compound. A crystal growth layer is formed in the substrate surface wherein at least a portion of which is oriented along an inclined plane with respect to a principal plane of the substrate. The semiconductor device includes a first conductive layer, an active layer and a second conductive layer formed on the crystal layer in a stacked arrangement and oriented along the inclined place.
摘要翻译：提供半导体发光器件及其制造方法。半导体发光器件包括具有包括由例如纤锌矿化合物构成的高差部分的表面的衬底。晶体生长层形成在衬底表面中，其中至少一部分相对于衬底的主平面沿倾斜平面取向。该半导体器件包括以层叠的方式形成在晶体层上并沿倾斜位置定向的第一导电层，有源层和第二导电层。

20. 发明授权

US6088081A Image recording apparatus 失效
标题翻译：图像记录装置
公开(公告)号：US6088081A
公开(公告)日：2000-07-11
申请号：US42872
申请日：1998-03-17
申请人： Masato Doi
发明人： Masato Doi
IPC分类号： G03B27/60 , H04N1/08 , G03B27/58 , G03B27/52
CPC分类号： H04N1/0821 , G03B27/60 , H04N1/08 , H04N1/086
摘要： In an image recording apparatus for recording an image on a recording sheet wound around a circumferential surface of a drum rotatable while retaining the recording sheet wound around the circumferential surface thereof, the drum is provided with a plurality of through holes to suck the recording sheet, connecting grooves to connect among the plurality of holes provided on the circumferential surface, and a leading end supply section to which the leading end of the recording sheet is supplied, wherein the connecting grooves shaped in parallel to the leading end of the recording sheet are not provided to the leading end supply section, and a drum controller controls the position of the circumferential surface of the drum so as to supply the leading end of the recording sheet to the leading end supply section when the recording sheet is supplied to the drum.
摘要翻译：在一个图像记录装置中，用于在围绕其圆周表面卷绕记录纸的同时将卷绕在可旋转滚筒的圆周表面上的记录纸上记录图像，滚筒设有多个通孔以吸收记录纸，在周面上设置的多个孔之间连接的连接槽以及供给记录纸的前端的前端供给部，其中与记录纸的前端平行的连结槽不是提供给前端供给部，并且鼓控制器控制滚筒的周面的位置，以便当记录纸被供应到滚筒时，将记录纸的前端提供给前端供应部。

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