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11. 发明授权

US5157470A Thin film transistor, manufacturing method thereof and matrix circuit board and image display device each using the same 失效
标题翻译：薄膜晶体管，其制造方法和矩阵电路板以及各自使用的图像显示装置
公开(公告)号：US5157470A
公开(公告)日：1992-10-20
申请号：US704855
申请日：1991-05-21
申请人： Eiji Matsuzaki , Takao Takano , Toshiyuki Koshita , Yoshifumi Yoritomi , Akihiro Kenmotsu
发明人： Eiji Matsuzaki , Takao Takano , Toshiyuki Koshita , Yoshifumi Yoritomi , Akihiro Kenmotsu
IPC分类号： G02F1/1368 , H01L27/12
CPC分类号： H01L27/12 , G02F1/1368
摘要： Disclosed are a thin film transistor comprising a first electrode pattern formed on an insulating substrate as a gate electrode, a first insulating film formed as a gate insulating film and covering at least the electrode pattern, a semiconductor thin film pattern mainly composed of silicon formed on the insulating film, the semiconductor thin film pattern overlapping the first electrode pattern and the existing region thereof being limited, second and third electrodes formed on the semiconductor thin film pattern as a drain electrode and a source electrode, the second and third electrodes covering a portion of the semiconductor thin film pattern and being spaced apart each other, and a thin film containing silicon oxide formed over the semiconductor film, the second and third electrodes being formed upon the silicon oxide film, a method of manufacturing the thin film transistor, an active matrix circuit board using the thin film transistors, and an image display device using the active matrix circuit board.
摘要翻译：公开了一种薄膜晶体管，其包括形成在作为栅电极的绝缘基板上的第一电极图案，形成为栅绝缘膜并且至少覆盖电极图案的第一绝缘膜，主要由硅形成的半导体薄膜图案形成在绝缘膜，与第一电极图案重叠的半导体薄膜图案及其现有区域被限制，形成在半导体薄膜图案上的第二和第三电极作为漏电极和源电极，第二和第三电极覆盖部分的半导体薄膜图案并且彼此间隔开，并且在半导体膜上形成含有氧化硅的薄膜，第二和第三电极形成在氧化硅膜上，制造薄膜晶体管的方法，活性使用薄膜晶体管的矩阵电路板，以及使用该激活的图像显示装置矩阵电路板。

12. 发明授权

US4902394A Sputtering method and apparatus 失效
标题翻译：溅射方法和装置
公开(公告)号：US4902394A
公开(公告)日：1990-02-20
申请号：US146031
申请日：1988-01-20
申请人： Akihiro Kenmotsu , Shigeru Kobayashi , Kunihiko Watanabe , Eiji Matsuzaki , Yoshifumi Yoritomi , Toshiyuki Koshita , Mitsuo Nakatani
发明人： Akihiro Kenmotsu , Shigeru Kobayashi , Kunihiko Watanabe , Eiji Matsuzaki , Yoshifumi Yoritomi , Toshiyuki Koshita , Mitsuo Nakatani
IPC分类号： C23C14/14 , C23C14/34 , C23C14/54 , C23C14/56 , H01L21/203
CPC分类号： C23C14/543 , C23C14/3464 , C23C14/548
摘要： A sputtering method and apparatus for use in forming thin films on a substrate. The power output of a sputtering power source is periodically changed to a high level power and a low level power, and each film is deposited to a thickness corresponding to the integrated value of the high level power, whereby a desired thickness can be obtained in any of multilayer films having mutually different film thickness ratios.
摘要翻译：用于在基板上形成薄膜的溅射方法和装置。溅射电源的功率输出周期性变化为高电平功率和低电平功率，并且将每个膜沉积到对应于高电平功率的积分值的厚度，由此可以获得期望的厚度的具有相互不同的膜厚比的多层膜。

13. 发明申请

US20100014042A1 Liquid crystal display device 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20100014042A1
公开(公告)日：2010-01-21
申请号：US12458584
申请日：2009-07-16
申请人： Hitoshi Komeno , Toshiyuki Koshita
发明人： Hitoshi Komeno , Toshiyuki Koshita
IPC分类号： G02F1/1339
CPC分类号： G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F2001/13415
摘要： The present invention provides a liquid crystal display device with a narrow picture frame which reduces a sealing defect by suppressing spreading of an orientation film. In a region inside a sealing material and outside a display region, an uneven surface for suppressing spreading of the orientation film is formed. It is preferable that the uneven surface is formed using an insulation film and, at the same time, an etching stopper layer is formed below the insulation film which forms the uneven surface. It is more preferable that the uneven surface and the stopper layer are simultaneously formed with a layer used for forming pixels in a step for forming such a layer thus preventing the increase of manufacturing steps.
摘要翻译：本发明提供一种具有窄画面的液晶显示装置，通过抑制取向膜的扩展来减少密封缺陷。在密封材料内部和显示区域外部的区域中，形成用于抑制取向膜扩散的不平坦表面。优选的是，使用绝缘膜形成凹凸表面，并且同时在形成不平坦表面的绝缘膜的下方形成蚀刻停止层。更优选的是，在形成这种层的步骤中，不均匀表面和阻挡层同时形成有用于形成像素的层，从而防止制造步骤的增加。

14. 发明授权

US07580104B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US07580104B2
公开(公告)日：2009-08-25
申请号：US11984376
申请日：2007-11-16
申请人： Hitoshi Komeno , Toshiyuki Koshita
发明人： Hitoshi Komeno , Toshiyuki Koshita
IPC分类号： G02F1/1339 , G02F1/1337
CPC分类号： G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F2001/13415
摘要： The present invention provides a liquid crystal display device with a narrow picture frame which reduces a sealing defect by suppressing spreading of an orientation film. In a region inside a sealing material and outside a display region, an uneven surface for suppressing spreading of the orientation film is formed. It is preferable that the uneven surface is formed using an insulation film and, at the same time, an etching stopper layer is formed below the insulation film which forms the uneven surface. It is more preferable that the uneven surface and the stopper layer are simultaneously formed with a layer used for forming pixels in a step for forming such a layer thus preventing the increase of manufacturing steps.
摘要翻译：本发明提供一种具有窄画面的液晶显示装置，通过抑制取向膜的扩展来减少密封缺陷。在密封材料内部和显示区域外部的区域中，形成用于抑制取向膜扩散的不平坦表面。优选的是，使用绝缘膜形成凹凸表面，并且同时在形成不平坦表面的绝缘膜的下方形成蚀刻停止层。更优选的是，在形成这种层的步骤中，不均匀表面和阻挡层同时形成有用于形成像素的层，从而防止制造步骤的增加。

15. 发明授权

US5493129A Thin film transistor structure having increased on-current 失效
公开(公告)号：US5493129A
公开(公告)日：1996-02-20
申请号：US372289
申请日：1989-06-27
申请人： Eiji Matsuzaki , Akihiro Kenmotsu , Yoshifumi Yoritomi , Toshiyuki Koshita , Takao Takano , Mitsuo Nakatani
发明人： Eiji Matsuzaki , Akihiro Kenmotsu , Yoshifumi Yoritomi , Toshiyuki Koshita , Takao Takano , Mitsuo Nakatani
IPC分类号： H01L29/417 , H01L29/786 , H01L29/04
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/78669 , H01L29/78687
摘要： A thin film transistor structure for use in driving liquid crystal display elements has a semiconductor active layer, a control electrode layer underlying the active layer with an insulating layer interposed therebetween and first and second main electrode layers formed on or above the active layer in a spaced relation with each other to define a channel in the active layer in cooperation with the control electrode layer between the main electrode layers. The active layer has a first peripheral edge portion generally perpendicular to the direction of the channel and a second peripheral edge portion generally not perpendicular to the direction of the channel. The first and/or second main electrode layer extends over the first and/or second peripheral edge portion of the active layer such that at least a part of the first peripheral edge portion and/or at least part of the second peripheral edge portion of the active layer has its side face directly covered with the main electrode layer.

16. 发明授权

US5399202A Resist-peeling liquid and process for peeling a resist using the same 失效
标题翻译：抗剥离液体及使用其的剥离抗蚀剂的方法
公开(公告)号：US5399202A
公开(公告)日：1995-03-21
申请号：US986683
申请日：1992-12-08
申请人： Hiroshi Kikuchi , Yasushi Sano , Satoru Todoroki , Hitoshi Oka , Toshiyuki Koshita , Masato Kikuchi , Mitsuo Nakatani , Michio Tsukii
发明人： Hiroshi Kikuchi , Yasushi Sano , Satoru Todoroki , Hitoshi Oka , Toshiyuki Koshita , Masato Kikuchi , Mitsuo Nakatani , Michio Tsukii
IPC分类号： C23F1/00 , C09D9/00 , C11D7/32 , G02F1/1362 , G03F7/42 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , H05K3/06 , B08B3/08 , B08B3/10
CPC分类号： C11D7/3281 , C11D7/3218 , G03F7/425 , G02F1/1362
摘要： A resist is peeled without leaving a residue after peeling, by bringing a resist-peeling liquid comprising a primary aliphatic amine of 2-6 carbon atoms into contact with the surface of an etched novolak positive photoresist, and removing the resist-peeling liquid containing the thus peeled resist from the surface of the etched resist. The used resist-peeling liquid can easily be recovered and regenerated.
摘要翻译：通过使包含2-6个碳原子的脂肪族脂族胺的抗蚀剂剥离液与蚀刻的酚醛清漆型正性光致抗蚀剂的表面接触，除去剥离后的残留物，除去含有从而从蚀刻抗蚀剂的表面剥离抗蚀剂。所使用的抗蚀剂剥离液可以容易地回收和再生。

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