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11. 发明申请

US20070074813A1 Method and apparatus for plasma doping 审中-公开
标题翻译：等离子体掺杂的方法和装置
公开(公告)号：US20070074813A1
公开(公告)日：2007-04-05
申请号：US11603146
申请日：2006-11-22
申请人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Ichiro Nakayama , Bunji Mizuno
IPC分类号： C23F1/00
CPC分类号： H01J37/32412 , H01J37/321 , H01J37/32174 , H01J37/32935 , H01J37/3299 , H01L21/2236
摘要： A method for impurity implantation, in which a substrate is positioned on a table provided within a chamber in which a vacuum will be introduced and also an implantation impurity is supplied. A first high frequency electric power is applied to a plasma generating element to thereby generate a plasma so that the impurity in the chamber is implanted in the substrate. Also, a second high frequency electric power is applied to the table. Detected are a condition of the plasma in the chamber and a voltage or current in the table. A controller controls at least one of the first and second high frequency electric power sources according to the detected condition of the plasma and/or the detected voltage or current, thereby controlling an implantation concentration of the impurity to be implanted.
摘要翻译：一种用于杂质注入的方法，其中将基板放置在设置在其中将被引入真空的室内的台上，并且还提供注入杂质。将第一高频电力施加到等离子体发生元件，从而产生等离子体，使得腔室中的杂质注入基板。此外，第二高频电力被施加到桌子上。检测到的是室内等离子体的状态，以及表中的电压或电流。控制器根据检测到的等离子体的状态和/或检测到的电压或电流来控制第一和第二高频电源中的至少一个，从而控制待植入的杂质的注入浓度。

12. 发明授权

US08288259B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US08288259B2
公开(公告)日：2012-10-16
申请号：US12950048
申请日：2010-11-19
申请人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
发明人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
IPC分类号： H01L21/223
CPC分类号： H01J37/3244 , H01J37/32412 , H01L21/2236
摘要： With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
摘要翻译：随着真空室内部的抽真空，并且气体供应到真空室中停止，在氦气和乙硼烷气体的混合气体被密封在真空室中的状态下，在真空容器中产生等离子体，同时向样品电极提供高频电力。通过提供给样品电极的高频电力，将硼引入到衬底表面附近。

13. 发明授权

US07858155B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US07858155B2
公开(公告)日：2010-12-28
申请号：US11666773
申请日：2005-10-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/2236 , H01L21/67069
摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.
摘要翻译：本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。通过排气孔12，通过作为排气装置的涡轮分子泵3排出，通过气体入口11将气体从气体供给装置2引入真空容器1。真空容器1内的压力保持在通过压力调节阀4的规定值。13.56MHz的高频电力从高频电源5供给到靠近与样品电极6相对的电介质窗7的线圈8，在真空容器1中产生耦合等离子体。提供用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。表面晶体通过改善样品电极6的结构，使硅晶片9的层成为无定形。

14. 发明授权

US07626184B2 Impurity introducing apparatus and impurity introducing method 失效
标题翻译：杂质引入装置和杂质引入方法
公开(公告)号：US07626184B2
公开(公告)日：2009-12-01
申请号：US12057117
申请日：2008-03-27
申请人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
发明人： Bunji Mizuno , Ichiro Nakayama , Yuichiro Sasaki , Tomohiro Okumura , Cheng-Guo Jin , Hiroyuki Ito
IPC分类号： H01L29/04 , G21K5/10
CPC分类号： H01L21/67167 , H01J37/32412 , H01L21/2236
摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.
摘要翻译：当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

15. 发明授权

US07582492B2 Method of doping impurities, and electronic element using the same 失效
标题翻译：掺杂杂质的方法和使用其的电子元件
公开(公告)号：US07582492B2
公开(公告)日：2009-09-01
申请号：US11597166
申请日：2005-05-19
申请人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
发明人： Cheng-Guo Jin , Yuichiro Sasaki , Bunji Mizuno , Katsumi Okashita , Hiroyuki Ito , Tomohiro Okumura , Satoshi Maeshima , Ichiro Nakayama
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L21/2236 , H01L21/0276
摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.
摘要翻译：本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤，以及通过光辐射进行退火的步骤。根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

16. 发明申请

US20090130335A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW 审中-公开
标题翻译：等离子体处理装置，等离子体处理方法，使用的电介质窗口以及这样的电介质窗口的制造方法
公开(公告)号：US20090130335A1
公开(公告)日：2009-05-21
申请号：US12065586
申请日：2006-09-01
申请人： Tomohiro Okumura , Hiroyuki Ito , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Ichiro Nakayama , Shogo Okita , Hisao Nagai
发明人： Tomohiro Okumura , Hiroyuki Ito , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Ichiro Nakayama , Shogo Okita , Hisao Nagai
IPC分类号： H05H1/24 , B05C11/00
CPC分类号： H01J37/321
摘要： A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased.
摘要翻译：一种均匀性高的等离子体掺杂的方法。将预定气体从气体供给装置引入真空容器中，同时通过作为排气装置的涡轮分子泵通过排气孔排出。通过压力调节阀将真空容器内的压力保持在规定值。 13.56MHz的高频功率从高频电源供给到靠近与样品电极相对的电介质窗口的线圈，由此在真空容器中产生感应耦合等离子体。电介质窗由多个电介质板构成，并且在至少两个彼此相对的电介质板的至少一个表面上形成槽。气体通道由槽和与槽相对的平坦表面形成，并且形成在电介质板中最靠近样品电极的气体流出孔与电介质窗内的凹槽连通。分别通过气体流出孔和气体流出孔引入的气体的流量可以彼此独立地控制，从而可以提高处理的均匀性。

17. 发明申请

US20080258082A1 Plasma Processing Method and Plasma Processing Apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20080258082A1
公开(公告)日：2008-10-23
申请号：US11666773
申请日：2005-10-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Cheng-Guo Jin , Satoshi Maeshima , Hiroyuki Ito , Ichiro Nakayama , Bunji Mizuno
IPC分类号： G21G5/00
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/2236 , H01L21/67069
摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.
摘要翻译：本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。通过排气孔12通过作为排气装置的涡轮分子泵3排出，将规定的气体从气体供给装置2经由气体入口11导入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。从高频电源5将13.56MHz的高频电力供给到与样品电极6相对的电介质窗7附近设置的线圈8，由此在真空容器1内产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。通过改善样品电极6的结构，使硅晶片9的表面晶体层成为非晶体。

18. 发明申请

US20060169673A1 Plasma processing method and apparatus 失效
公开(公告)号：US20060169673A1
公开(公告)日：2006-08-03
申请号：US11397626
申请日：2006-04-05
申请人： Tomohiro Okumura , Yukihiro Maegawa , Hiroyuki Suzuki , Ichiro Nakayama
发明人： Tomohiro Okumura , Yukihiro Maegawa , Hiroyuki Suzuki , Ichiro Nakayama
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , C23F4/00 , Y02E50/30
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the antenna, and a second high-frequency power supply supplies a high-frequency power of a 100 kHz to 20 MHz. A refrigerant supply unit is provided for supplying a refrigerant flow to the antenna, and an electrically conductive sheet is provided between the antenna and the antenna cover. The electrically conductive sheet has a surface that is parallel to the substrate electrode and is larger than an opposing surface of the antenna.

19. 发明申请

US20050287776A1 Method of plasma doping 失效
标题翻译：等离子体掺杂法
公开(公告)号：US20050287776A1
公开(公告)日：2005-12-29
申请号：US10532768
申请日：2003-11-18
申请人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama , Hisataka Kanada , Tomohiro Okumura
发明人： Yuichiro Sasaki , Bunji Mizuno , Ichiro Nakayama , Hisataka Kanada , Tomohiro Okumura
IPC分类号： H01L21/265 , H01L21/223 , H01L21/04
CPC分类号： H01L21/2236
摘要： A method of plasma doping in which dilution of B2H6 is maximized for enhanced safety and stable plasma generation and sustention can be carried out without lowering of doping efficiency and in which the amount of dopant injected can be easily controlled. In particular, a method of plasma doping characterized in that B2H6 gas is used as a material containing doping impurity while He is used as a substance of high dissociation energy and that the concentration of B2H6 in mixed gas is less than 0.05%.
摘要翻译：可以在不降低掺杂效率的情况下进行等离子体掺杂的等离子体掺杂方法，其中使B 2 H 2 H 6的稀释最大化以提高安全性和稳定的等离子体产生和维持能力，其中可以容易地控制注入的掺杂剂的量。特别地，等离子体掺杂的方法特征在于，使用B 2 H 6 H 6气体作为含有掺杂杂质的材料，同时使用He作为高解离能的物质，混合气体中的B 2 H 6 H 6的浓度小于0.05％。

20. 发明申请

US20050145340A1 Method and apparatus for plasma processing 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050145340A1
公开(公告)日：2005-07-07
申请号：US11067628
申请日：2005-02-28
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： H01J37/32 , H01L21/306
CPC分类号： H01J37/321
摘要： A plasma processing method includes controlling a pressure of an interior of a vacuum chamber to a specified pressure by exhausting the interior of the vacuum chamber while supplying gas into the interior of vacuum chamber. While the pressure of the interior of the vacuum chamber is being controlled, high-frequency power is supplied to one end of a first conductor which is opened at another end, and which is configured as a vortex. Also, grounding one end of a second conductor which is opened at another end and which is configured as a vortex. Finally, electromagnetic waves from the first conductor and the second conductor radiate into the vacuum chamber, generating plasma in the vacuum chamber and processing a substrate placed on the electrode within the vacuum chamber.
摘要翻译：等离子体处理方法包括通过在将真空室内的气体供给到真空室内部的同时排出真空室的内部来将真空室的内部压力控制到规定的压力。在控制真空室内部的压力的同时，将高频功率供给到在另一端开放的第一导体的一端，并被配置为涡流。另外，将第二导体的一端接地，该第二导体在另一端开放，并被构造为涡流。最后，来自第一导体和第二导体的电磁波辐射到真空室中，在真空室中产生等离子体并处理放置在真空室内的电极上的衬底。

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