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    • 17. 发明授权
    • Atomic layer deposition of strontium oxide via N-propyltetramethyl cyclopentadiendyl precursor
    • 通过N-丙基四甲基环戊二烯基前体原子层沉积氧化锶
    • US07790629B2
    • 2010-09-07
    • US12070376
    • 2008-02-14
    • Timothy P. HolmeFriedrich B. PrinzMasayuki Sugawara
    • Timothy P. HolmeFriedrich B. PrinzMasayuki Sugawara
    • H01L21/31
    • C23C16/30C23C16/40C23C16/45525H01L21/3141
    • A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.
    • 提供了一种在衬底上沉积氧化物材料的方法。 沉积室保持衬底,其中衬底处于特定温度,并且腔室具有室压力和壁温度。 将含有阳离子材料原子的前体分子提供到室,其中前体具有线路温度和源温度。 氧化剂被提供到室,其中氧化剂具有源流速。 水被提供到室,其中水具有源温度。 通过交替的前体脉冲,水和氧化剂与腔室的清洗相结合,以提供基底上氧化物材料的低污染水平和高生长速率,其中脉冲和吹扫具有持续时间和流速。 可重复的生长周期包括脉冲前体,清洗室,脉冲水,脉冲氧化剂和清洗室。
    • 19. 发明授权
    • Quantum dot ultracapacitor and electron battery
    • 量子点超级电容器和电子电池
    • US08802287B2
    • 2014-08-12
    • US12657198
    • 2010-01-15
    • Timothy P. HolmeFriedrich B. Prinz
    • Timothy P. HolmeFriedrich B. Prinz
    • H01M4/02B82Y10/00
    • B82Y10/00B82Y30/00H01L28/40H01L29/127
    • The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.
    • 本发明提供一种具有至少一个量子限制物质(QCS)的固态储能装置,其中QCS可以包括量子点(QD),量子阱或纳米线。 本发明还包括至少一层电介质材料,其中结合有至少一个QCS,以及设置在电介质材料的至少一层的顶表面上的第一导电电极,第二导电电极设置在 所述至少一层介电材料的底表面,其中所述第一电极和所述第二电极被设置成将电荷转移到所述至少一个QCS,其中当设置电路以在所述第一电极上提供电位时 和所述第二电极,所述电位将所传送的电荷从所述至少一个QCS放电至所述电路。