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11. 发明授权

US07236242B2 Nano-enhanced Raman spectroscopy-active nanostructures including elongated components and methods of making the same 有权
标题翻译：纳米增强拉曼光谱 - 包括细长组分的活性纳米结构及其制备方法
公开(公告)号：US07236242B2
公开(公告)日：2007-06-26
申请号：US11044105
申请日：2005-01-27
申请人： Theodore I. Kamins , R. Stanley Williams
发明人： Theodore I. Kamins , R. Stanley Williams
IPC分类号： G01N21/65 , G01J3/44
CPC分类号： G01N21/658
摘要： An NERS-active structure is disclosed that includes a substrate and at least one elongated component disposed on the substrate. The at least one elongated component may include two conducting strips including an NERS-active material and an insulating strip positioned between the two conducting strips. Alternatively, the at least one elongated component may include a homogeneous component. An NERS system is also disclosed that includes an NERS-active structure. Also disclosed are methods for forming an NERS-active structure and methods for performing NERS with NERS-active structures.
摘要翻译：公开了一种包括衬底和设置在衬底上的至少一个细长部件的NERS-活性结构。所述至少一个细长部件可以包括两个导电条，包括NERS-活性材料和位于两个导电条之间的绝缘条。或者，至少一个细长部件可以包括均匀的部件。还公开了包括NERS活性结构的NERS系统。还公开了形成NERS活性结构的方法和用NERS活性结构进行NERS的方法。

12. 发明授权

US09354363B2 Controlling phase response in a sub-wavelength grating lens 有权
标题翻译：控制亚波长光栅透镜中的相位响应
公开(公告)号：US09354363B2
公开(公告)日：2016-05-31
申请号：US13640348
申请日：2010-04-13
申请人： Wei Wu , R. Stanley Williams , Jingjing Li , Theodore I. Kamins , Marco Fiorentino
发明人： Wei Wu , R. Stanley Williams , Jingjing Li , Theodore I. Kamins , Marco Fiorentino
IPC分类号： G02B5/18 , B05D5/06
CPC分类号： G02B5/1809 , B05D5/06 , G02B5/18 , G02B5/1828 , G02B5/1861
摘要： A sub-wavelength grating device having controlled phase response includes a grating layer having line widths, line thicknesses, line periods, and line spacings selected to produce a first level of control in phase changes of different portions of a beam of light reflected from the grating layer. The device also includes a substrate affixed to the grating layer that produces a second level of control in phase changes of different portions of a beam of light reflected from the grating layer, the second level of control being accomplished abrupt stepping of the substrate in a horizontal dimension, ramping the substrate in a horizontal dimension, or changing the index of refraction in a horizontal dimension.
摘要翻译：具有受控相位响应的亚波长光栅装置包括具有线宽，线厚度，线周期和线间隔的光栅层，其被选择以产生从光栅反射的光束的不同部分的相位变化中的第一级控制层。该装置还包括固定到光栅层的衬底，其产生从光栅层反射的光束的不同部分的相位变化的第二级控制，第二级控制是在水平方向上完成衬底的突然步进尺寸，在水平尺寸上斜化基底，或改变水平尺寸的折射率。

13. 发明申请

US20110228592A1 Programmable Bipolar Electronic Device 有权
标题翻译：可编程双极电子器件
公开(公告)号：US20110228592A1
公开(公告)日：2011-09-22
申请号：US13130805
申请日：2009-01-13
申请人： Theodore I. Kamins , R. Stanley Williams
发明人： Theodore I. Kamins , R. Stanley Williams
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0002 , G11C13/003 , G11C2213/52 , G11C2213/53 , H01L27/101 , H01L27/1026 , H01L45/08 , H01L45/1206 , H01L45/122 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A configurable memristive device (300) for regulating an electrical signal includes a memristive matrix (350) containing a first dopant species; emitter (320), collector (310), and a base electrodes (330, 340) which are in contact with the memristive matrix (350); and a mobile dopant species contained within a central region (360) contiguous with the base electrodes (330, 340), the mobile dopant species moving within the memristive matrix (350) in response to a programming electrical field. A method of configuring and using a memristive device (300) includes: applying a programming electrical field across a memristive matrix (350) such that a mobile dopant species creates a central doped region (360) which bisects the memristive matrix (350); and applying a control voltage to the central doped region (360) to regulate current flow between an emitter electrode (320) and a collector electrode (310).
摘要翻译：用于调节电信号的可配置忆阻装置（300）包括含有第一掺杂剂物质的忆阻矩阵（350）发射极（320），集电极（310）以及与所述忆阻矩阵（350）接触的基极（330,340）; 以及包含在与所述基极（330,340）相邻的中心区域（360）内的移动掺杂剂物质，所述移动掺杂剂物质响应于编程电场在所述忆阻矩阵（350）内移动。一种配置和使用忆阻器件（300）的方法包括：跨越忆阻矩阵（350）施加编程电场，使得移动掺杂物物质形成将所述忆阻矩阵（350）平分的中心掺杂区域（360）; 以及向所述中心掺杂区域（360）施加控制电压以调节发射极电极（320）和集电极电极（310）之间的电流。

14. 发明申请

US20110181352A1 Electrically Actuated Devices 有权
标题翻译：电动元件
公开(公告)号：US20110181352A1
公开(公告)日：2011-07-28
申请号：US13121918
申请日：2008-12-23
申请人： Theodore I. Kamins , R. Stanley Williams
发明人： Theodore I. Kamins , R. Stanley Williams
IPC分类号： G05F3/16 , H01L45/00 , H01L21/479
CPC分类号： H01L27/1021 , H01L21/823807
摘要： An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least two dopants are present in a spatially varying region of the active region prior to device actuation. The at least two dopants have opposite conductivity types and different mobilities.
摘要翻译：电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。在器件致动之前，至少两个掺杂剂存在于有源区的空间变化区域中。至少两种掺杂剂具有相反的导电类型和不同的迁移率。

15. 发明申请

US20080079104A1 Sensing devices and methods for forming the same 失效
标题翻译：传感装置及其形成方法
公开(公告)号：US20080079104A1
公开(公告)日：2008-04-03
申请号：US11584103
申请日：2006-10-20
申请人： Duncan R. Stewart , Amir A. Yasseri , R. Stanley Williams , Theodore I. Kamins
发明人： Duncan R. Stewart , Amir A. Yasseri , R. Stanley Williams , Theodore I. Kamins
IPC分类号： H01L31/0203 , H01L21/00
CPC分类号： B82Y20/00 , G01N21/658 , H01L31/035227
摘要： A sensing device includes an optical cavity having two substantially opposed reflective surfaces. At least one nanowire is operatively disposed in the optical cavity. A plurality of metal nanoparticles is established on the at least one nanowire.
摘要翻译：感测装置包括具有两个基本上相对的反射表面的光学腔。至少一个纳米线可操作地设置在光腔中。在至少一个纳米线上建立多个金属纳米颗粒。

16. 发明授权

US08244134B2 Optical interconnect 有权
标题翻译：光互连
公开(公告)号：US08244134B2
公开(公告)日：2012-08-14
申请号：US11820310
申请日：2007-06-19
申请人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
发明人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
IPC分类号： H04J14/02 , H04B10/00
CPC分类号： H04B10/803 , G02B6/4206 , G02B6/43
摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.
摘要翻译：光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器第二个镜头。

17. 发明申请

US20080317406A1 Optical interconnect 有权
标题翻译：光互连
公开(公告)号：US20080317406A1
公开(公告)日：2008-12-25
申请号：US11820310
申请日：2007-06-19
申请人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
发明人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
IPC分类号： G02B6/28
CPC分类号： H04B10/803 , G02B6/4206 , G02B6/43
摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.
摘要翻译：光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器第二个镜头。

18. 发明授权

US09664560B2 Double-grating surface-enhanced Raman spectroscopy 有权
公开(公告)号：US09664560B2
公开(公告)日：2017-05-30
申请号：US14381009
申请日：2012-03-06
申请人： R. Stanley Williams , Zhiyong Li
发明人： R. Stanley Williams , Zhiyong Li
IPC分类号： G01J3/02 , G01J3/44 , G01N21/65
CPC分类号： G01J3/0205 , G01J3/44 , G01J3/4412 , G01N21/658 , G01N2201/06113 , G01N2201/068
摘要： A double-grating surface-enhanced Raman spectrometer. The spectrometer includes a substrate; a plurality of nanofingers carried by the substrate, the nanofingers arranged to define a first optical grating; a light source oriented to project a beam of light toward the first optical grating; a second optical grating oriented to receive a beam of light scattered from the first optical grating; and a detector oriented to receive a beam of light scattered from the second optical grating.

19. 发明授权

US09324718B2 Three dimensional multilayer circuit 有权
标题翻译：三维多层电路
公开(公告)号：US09324718B2
公开(公告)日：2016-04-26
申请号：US13260019
申请日：2010-01-29
申请人： Wei Wu , R. Stanley Williams
发明人： Wei Wu , R. Stanley Williams
IPC分类号： H01L25/00 , H03K19/177 , H01L21/46 , H01L21/4763 , H01L27/10 , H01L27/02 , H01L27/06 , H01L27/24
CPC分类号： H01L27/101 , H01L27/0207 , H01L27/0688 , H01L27/24
摘要： A three dimensional multilayer circuit (600) includes a plurality of crossbar arrays (512) made up of intersecting crossbar segments (410, 420) and programmable crosspoint devices (514) interposed between the intersecting crossbar segments (410, 420). Shift pins (505, 510) are used to shift connection domains (430) of the intersecting crossbar segments (410, 420) between stacked crossbar arrays (512) such that the programmable crosspoint devices (514) are uniquely addressed. The shift pins (505, 510) make electrical connections between crossbar arrays (512) by passing vertically between crossbar segments (410, 510) in the first crossbar array (512) and crossbar segments in a second crossbar array. A method for transforming multilayer circuits is also described.
摘要翻译：三维多层电路（600）包括由相交的横杆段（410,420）和插入在相交的横杆段（410,420）之间的可编程交叉点装置（514）组成的多个横杆阵列（512）。移位销（505,510）用于使堆叠的横杆阵列（512）之间的交叉横截面段（410,420）的连接区域（430）移位，使得可编程交叉点设备（514）被唯一地寻址。换档销（505,510）通过在第一交叉杆阵列（512）中的横杆段（410,510）和第二横杆阵列中的横杆段之间垂直地穿过横杆阵列（512）之间进行电连接。还描述了用于转换多层电路的方法。

20. 发明申请

US20150076438A1 NON-VOLATILE RESISTIVE MEMORY CELLS 有权
标题翻译：非挥发性电阻记忆细胞
公开(公告)号：US20150076438A1
公开(公告)日：2015-03-19
申请号：US14396406
申请日：2012-07-31
申请人： Hans S. Cho , Janice H. Nickel , R. Stanley Williams , Jaesung Roh , Jinwon Park , Choi Hyejung , Moonsig Joo , Jiwon Moon , Changgoo Lee , Yongsun Sohn , Jeongtae Kim
发明人： Hans S. Cho , Janice H. Nickel , R. Stanley Williams , Jaesung Roh , Jinwon Park , Choi Hyejung , Moonsig Joo , Jiwon Moon , Changgoo Lee , Yongsun Sohn , Jeongtae Kim
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/124 , H01L45/1253 , H01L45/146 , H01L45/1641 , H01L45/1675 , H01L45/1691
摘要： Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.
摘要翻译：本公开的实例包括非易失性电阻存储器单元及其形成方法。非易失性电阻性存储单元的示例包括在第一电极上形成为垂直延伸结构的非易失性电阻性存储单元的第一部分，其中第一部分包括跨越垂直宽度的至少一个阻聚材料延伸结构。非易失性电阻性存储单元还包括在第一部分的至少一个侧壁上形成为垂直延伸的忆阻材料结构的第二部分。

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