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    • 11. 发明授权
    • Solid-state imaging sensor, method of manufacturing the same, and image pickup apparatus
    • 固态成像传感器,其制造方法和图像拾取装置
    • US08450780B2
    • 2013-05-28
    • US12657047
    • 2010-01-13
    • Tetsuya Oishi
    • Tetsuya Oishi
    • H01L21/28H01L27/148
    • H01L31/18H01L27/14603H01L27/14612H01L27/14627
    • Disclosed is a solid-state image sensor including a photoelectric converter, a charge detector, and a transfer transistor. The photoelectric converter stores a signal charge that is subjected to photoelectric conversion. The charge detector detects the signal charge. The transfer transistor transfers the signal charge from the photoelectric converter to the charge detector. In the solid-state image sensor, the transfer transistor includes a gate insulating film, a gate electrode formed on the gate insulating film, a first spacer formed on a sidewall of the gate electrode on a side of the photoelectric converter, and a second spacer formed on another sidewall of the gate electrode on a side of the charge detector. The first spacer is longer than the second spacer.
    • 公开了一种包括光电转换器,电荷检测器和转移晶体管的固态图像传感器。 光电转换器存储经受光电转换的信号电荷。 电荷检测器检测信号电荷。 传输晶体管将信号电荷从光电转换器传送到电荷检测器。 在固态图像传感器中,传输晶体管包括栅极绝缘膜,形成在栅极绝缘膜上的栅极电极,形成在光电转换器侧的栅极电极的侧壁上的第一间隔物和第二间隔物 形成在电荷检测器侧的栅电极的另一个侧壁上。 第一间隔物比第二间隔物长。
    • 15. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07932567B2
    • 2011-04-26
    • US12389897
    • 2009-02-20
    • Akira MizumuraHiroaki AmmoTetsuya Oishi
    • Akira MizumuraHiroaki AmmoTetsuya Oishi
    • H01L27/088
    • H01L21/845H01L21/823431H01L27/0207H01L27/088H01L27/0886H01L27/1203H01L29/66795H01L29/785
    • Disclosed herein is a semiconductor device including: first and second transistors, each of the first and second transistors being formed with a plurality of fin transistors, and the first and second transistors being connected in parallel to electrically share a source, wherein the plurality of fin transistors each include a fin activation layer, the fin activation layer protruding from a semiconductor substrate, a source layer serving as the source being formed on one end, and a drain layer on the other end of the fin activation layer so as to form a channel region, the fin activation layers are arranged adjacent to each other in parallel, and the drain layers are disposed so that the currents flow through the plurality of fin transistors in opposite directions between the first and second transistors.
    • 本文公开了一种半导体器件,包括:第一和第二晶体管,第一和第二晶体管中的每一个形成有多个鳍式晶体管,并且第一和第二晶体管并联连接以电共享源,其中多个鳍 晶体管各自包括翅片激活层,鳍状物活化层从半导体衬底突出,用作源的源极一端形成,并且在鳍激活层的另一端上形成漏极层,以形成沟道 翅片激活层平行地彼此相邻布置,并且设置漏极层使得电流在第一和第二晶体管之间沿相反方向流过多个鳍式晶体管。
    • 16. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20090230483A1
    • 2009-09-17
    • US12389897
    • 2009-02-20
    • Akira MizumuraHiroaki AmmoTetsuya Oishi
    • Akira MizumuraHiroaki AmmoTetsuya Oishi
    • H01L27/088
    • H01L21/845H01L21/823431H01L27/0207H01L27/088H01L27/0886H01L27/1203H01L29/66795H01L29/785
    • Disclosed herein is a semiconductor device including: first and second transistors, each of the first and second transistors being formed with a plurality of fin transistors, and the first and second transistors being connected in parallel to electrically share a source, wherein the plurality of fin transistors each include a fin activation layer, the fin activation layer protruding from a semiconductor substrate, a source layer serving as the source being formed on one end, and a drain layer on the other end of the fin activation layer so as to form a channel region, the fin activation layers are arranged adjacent to each other in parallel, and the drain layers are disposed so that the currents flow through the plurality of fin transistors in opposite directions between the first and second transistors.
    • 本文公开了一种半导体器件,包括:第一和第二晶体管,第一和第二晶体管中的每一个形成有多个鳍式晶体管,并且第一和第二晶体管并联连接以电共享源,其中多个鳍 晶体管各自包括翅片激活层,鳍状物活化层从半导体衬底突出,用作源的源极一端形成,并且在鳍激活层的另一端上形成漏极层,以形成沟道 翅片激活层平行地彼此相邻布置,并且设置漏极层使得电流在第一和第二晶体管之间沿相反方向流过多个鳍式晶体管。
    • 17. 发明授权
    • Speaker unit for low frequency reproduction
    • 扬声器单元用于低频再现
    • US06955241B2
    • 2005-10-18
    • US11041822
    • 2005-01-24
    • Erik ThorsellGlenn CassTetsuya Oishi
    • Erik ThorsellGlenn CassTetsuya Oishi
    • H04R9/02H04R1/02H04R1/28H04R7/18H04R9/04H04R31/00H05K5/02H04R1/22
    • H04R1/2826H04R2499/13
    • The invention provides a speaker unit for low frequency reproduction wherein distortion is reduced and the orientation of a sound image of the lower side frequency region is augmented. To that end, the phase characteristic in an actually used frequency band is made substantially flat. The speaker unit includes a speaker enclosure, a duct formed in the speaker enclosure and having a port thereon, and a speaker mounted in the speaker enclosure. The speaker is formed such that it has a first resonance frequency set higher than a higher side frequency of the actually used frequency band (about 20 Hz to 100 Hz), while the port is formed such that it has a second resonance frequency set lower than a lower side frequency of the actually used frequency band. For example, the speaker includes a vibrating system having a reduced mass or a reduced compliance with which the first resonance frequency is set higher than the higher side frequency of the actually used frequency band, and the duct has an increased length or a controlled cross sectional area with which the second resonance frequency is set lower than the lower side frequency of the actually used frequency band.
    • 本发明提供了一种用于低频再现的扬声器单元,其中失真减小,并且下侧频率区域的声像的取向被增大。 为此,实际使用的频带中的相位特性基本上是平坦的。 扬声器单元包括扬声器外壳,形成在扬声器外壳中并具有端口的导管和安装在扬声器外壳中的扬声器。 扬声器形成为使得其具有设定为高于实际使用频带(约20Hz至100Hz)的较高侧频率的第一谐振频率,而端口形成为具有低于 实际使用的频带的较低频率。 例如,扬声器包括振动系统,其具有减小的质量或降低的顺应性,第一谐振频率被设定为高于实际使用的频带的较高频率,并且该导管具有增加的长度或受控的横截面 第二共振频率被设定为低于实际使用频带的下侧频率的区域。
    • 18. 发明授权
    • Speaker unit for low frequency reproduction
    • 扬声器单元用于低频再现
    • US06912290B1
    • 2005-06-28
    • US09714799
    • 2000-11-16
    • Erik ThorsellGlenn CassTetsuya Oishi
    • Erik ThorsellGlenn CassTetsuya Oishi
    • H04R9/02H04R1/02H04R1/28H04R7/18H04R9/04H04R31/00H04R25/00
    • H04R1/2826H04R2499/13
    • The invention provides a speaker unit for low frequency reproduction wherein distortion is reduced and the orientation of a sound image of the lower side frequency region is augmented. To that end, the phase characteristic in an actually used frequency band is made substantially flat. The speaker unit includes a speaker enclosure, a duct formed in the speaker enclosure and having a port thereon, and a speaker mounted in the speaker enclosure. The speaker is formed such that it has a first resonance frequency set higher than a higher side frequency of the actually used frequency band (about 20 Hz to 100 Hz), while the port is formed such that it has a second resonance frequency set lower than a lower side frequency of the used frequency band. For example, the speaker includes a vibrating system having a reduced mass or a reduced compliance with which the first resonance frequency is set higher than the higher side frequency of the actually used frequency band, and the duct has an increased length or a controlled cross sectional area with which the second resonance frequency is set lower than the lower side frequency of the actually used frequency band.
    • 本发明提供了一种用于低频再现的扬声器单元,其中失真减小,并且下侧频率区域的声像的取向被增大。 为此,实际使用的频带中的相位特性基本上是平坦的。 扬声器单元包括扬声器外壳,形成在扬声器外壳中并具有端口的导管和安装在扬声器外壳中的扬声器。 扬声器形成为使得其具有设定为高于实际使用频带(约20Hz至100Hz)的较高侧频率的第一谐振频率,而端口形成为具有低于 所使用的频带的较低频率。 例如,扬声器包括振动系统,其具有减小的质量或降低的顺应性,第一谐振频率被设定为高于实际使用的频带的较高频率,并且该导管具有增加的长度或受控的横截面 第二共振频率被设定为低于实际使用频带的下侧频率的区域。
    • 19. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08178933B2
    • 2012-05-15
    • US13039684
    • 2011-03-03
    • Akira MizumuraHiroaki AmmoTetsuya Oishi
    • Akira MizumuraHiroaki AmmoTetsuya Oishi
    • H01L27/088
    • H01L21/845H01L21/823431H01L27/0207H01L27/088H01L27/0886H01L27/1203H01L29/66795H01L29/785
    • A semiconductor device including first and second transistors, each of the first and second transistors being formed with a plurality of fin transistors, and the first and second transistors being connected in parallel to electrically share a source, wherein the plurality of fin transistors each include a fin activation layer, the fin activation layer protruding from a semiconductor substrate, a source layer serving as the source being formed on one end, and a drain layer on the other end of the fin activation layer so as to form a channel region, the fin activation layers are arranged adjacent to each other in parallel, and the drain layers are disposed so that the currents flow through the plurality of fin transistors in opposite directions between the first and second transistors.
    • 一种包括第一和第二晶体管的半导体器件,第一和第二晶体管中的每一个形成有多个鳍式晶体管,并且第一和第二晶体管并联连接以电共享源,其中多个鳍式晶体管每个包括 翅片活化层,从半导体衬底突出的翅片活化层,在一端形成源极的源极层和翅片活化层的另一端的漏极层,以形成沟道区域,鳍状物 激活层平行地彼此相邻布置,并且漏极层被布置成使得电流在第一和第二晶体管之间沿相反方向流过多个鳍式晶体管。