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11. 发明授权

US08441092B2 Thermoelectric cooler system, method and device 有权
标题翻译：热电冷却器系统，方法和装置
公开(公告)号：US08441092B2
公开(公告)日：2013-05-14
申请号：US12961229
申请日：2010-12-06
申请人： Ravi Shankar , Olivier Le Neel
发明人： Ravi Shankar , Olivier Le Neel
IPC分类号： H01L31/058 , H01L23/34 , H01L21/00
CPC分类号： H01L23/38 , H01L27/16 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor thermoelectric cooler is configured to direct heat through channels of the cooler. The thermoelectric cooler has multiple electrodes and a first dielectric material positioned between side surfaces of the electrodes. A second dielectric material, different from the first dielectric material, is in contact with top surfaces of the electrodes. The first dielectric material extends above the top surface of the electrodes, separating portions of the second dielectric material, and is in contact with a portion of the top surfaces of the electrodes. The first dielectric material has a thermal conductivity different than a thermal conductivity of the second dielectric material. A ratio of the first dielectric material to the second dielectric material in contact with the top surface of the electrodes may be selected to control the heat retention. The semiconductor thermoelectric cooler may be manufactured using thin film technology.
摘要翻译：半导体热电冷却器构造成通过冷却器的通道引导热量。热电冷却器具有多个电极和位于电极的侧表面之间的第一介电材料。与第一介电材料不同的第二介电材料与电极的顶表面接触。第一电介质材料在电极的顶表面上方延伸，分离第二介电材料的部分，并与电极的顶表面的一部分接触。第一电介质材料具有不同于第二电介质材料的热导率的导热系数。可以选择与电极的顶表面接触的第一电介质材料与第二电介质材料的比例以控制保温。半导体热电冷却器可以使用薄膜技术制造。

12. 发明授权

US09027400B2 Tunable humidity sensor with integrated heater 有权
标题翻译：带可调谐湿度传感器，集成加热器
公开(公告)号：US09027400B2
公开(公告)日：2015-05-12
申请号：US13310477
申请日：2011-12-02
申请人： Olivier Le Neel , Suman Cherian , Ravi Shankar , Boon Nam Poh , Sebastien Marsanne , Michele Vaiana
发明人： Olivier Le Neel , Suman Cherian , Ravi Shankar , Boon Nam Poh , Sebastien Marsanne , Michele Vaiana
IPC分类号： G01N27/22
CPC分类号： G01N27/223
摘要： A capacitive humidity sensor includes a first electrode, a humidity sensitive dielectric layer, and a second electrode. The humidity sensitive dielectric layer is between the first and the second electrodes. The humidity sensitive dielectric layer is etched at selected regions to form hollow regions between the first and second electrodes.
摘要翻译：电容式湿度传感器包括第一电极，湿度敏感介电层和第二电极。湿敏电介质层位于第一和第二电极之间。在选定的区域蚀刻湿度敏感的介电层，以在第一和第二电极之间形成中空区域。

13. 发明授权

US08809861B2 Thin film metal-dielectric-metal transistor 有权
标题翻译：薄膜金属 - 介电金属晶体管
公开(公告)号：US08809861B2
公开(公告)日：2014-08-19
申请号：US12981375
申请日：2010-12-29
申请人： Olivier Le Neel , Ravi Shankar , Calvin Leung
发明人： Olivier Le Neel , Ravi Shankar , Calvin Leung
IPC分类号： H01L29/786 , H01L49/00
CPC分类号： H01L49/00 , H01L29/66742 , H01L29/786 , H01L29/78684 , Y10S257/902
摘要： A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.
摘要翻译：形成具有薄膜金属沟道区的晶体管。晶体管可以形成在半导体衬底的表面，绝缘衬底或衬底之上的电介质层之间。可以形成各自具有薄膜金属沟道区的多个晶体管。这种晶体管的多个阵列可以垂直地堆叠在相同的器件中。

14. 发明申请

US20130139587A1 TUNABLE HUMIDITY SENSOR WITH INTEGRATED HEATER 有权
标题翻译：带集成加热器的可调式湿度传感器
公开(公告)号：US20130139587A1
公开(公告)日：2013-06-06
申请号：US13310477
申请日：2011-12-02
申请人： Olivier Le Neel , Suman Cherian , Ravi Shankar , Boon Nam Poh , Sebastien Marsanne , Michele Vaiana
发明人： Olivier Le Neel , Suman Cherian , Ravi Shankar , Boon Nam Poh , Sebastien Marsanne , Michele Vaiana
IPC分类号： G01N27/22 , B05D3/10 , C23F1/02 , B05D5/12
CPC分类号： G01N27/223
摘要： A capacitive humidity sensor includes a first electrode, a humidity sensitive dielectric layer, and a second electrode. The humidity sensitive dielectric layer is between the first and the second electrodes. The humidity sensitive dielectric layer is etched at selected regions to form hollow regions between the first and second electrodes.
摘要翻译：电容式湿度传感器包括第一电极，湿度敏感介电层和第二电极。湿敏电介质层位于第一和第二电极之间。在选定的区域蚀刻湿度敏感的介电层，以在第一和第二电极之间形成中空区域。

15. 发明申请

US20120168754A1 THIN FILM METAL-DIELECTRIC-METAL TRANSISTOR 有权
标题翻译：薄膜金属 - 电介质金属晶体管
公开(公告)号：US20120168754A1
公开(公告)日：2012-07-05
申请号：US12981375
申请日：2010-12-29
申请人： Olivier Le Neel , Ravi Shankar , Calvin Leung
发明人： Olivier Le Neel , Ravi Shankar , Calvin Leung
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L49/00 , H01L29/66742 , H01L29/786 , H01L29/78684 , Y10S257/902
摘要： A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.
摘要翻译：形成具有薄膜金属沟道区的晶体管。晶体管可以形成在半导体衬底的表面，绝缘衬底或衬底之上的电介质层之间。可以形成各自具有薄膜金属沟道区的多个晶体管。这种晶体管的多个阵列可以垂直地堆叠在相同的器件中。

16. 发明授权

US08847382B2 Thermoelectric cooler system, method and device 有权
标题翻译：热电冷却器系统，方法和装置
公开(公告)号：US08847382B2
公开(公告)日：2014-09-30
申请号：US12961311
申请日：2010-12-06
申请人： Ravi Shankar , Olivier Le Neel
发明人： Ravi Shankar , Olivier Le Neel
IPC分类号： H01L23/10 , H01L21/00 , H01L21/40 , H01L27/16 , H01L23/38 , H01L27/08
CPC分类号： H01L23/38 , H01L27/0814 , H01L27/16 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor thermoelectric cooler includes P-type and N-type thermoelectric cooling elements. The P-type and N-type thermoelectric elements have a first portion having a first cross-sectional area and a second portion having a second cross-sectional area larger than the first cross-sectional area. The P-type and N-type thermoelectric cooling elements may, for example, be T-shaped or L-shaped. In another example, the thermoelectric cooling elements have a first surface having a first shape configured to couple to a first electrical conductor and a second surface opposite the first surface and having a second shape, different from the first shape, and configured to couple to a second electrical conductor. For example, the first surface may have a rectilinear shape of a first area and the second surface may have a rectilinear shape of a second area different from the first area. The semiconductor thermoelectric cooler may be manufactured using thin film technology.
摘要翻译：半导体热电冷却器包括P型和N型热电冷却元件。 P型和N型热电元件具有具有第一横截面积的第一部分和具有大于第一横截面积的第二横截面积的第二部分。 P型和N型热电冷却元件例如可以是T形或L形。在另一个示例中，热电冷却元件具有第一表面，该第一表面具有被配置为耦合到第一电导体和与第一表面相对的第二表面并且具有与第一形状不同的第二形状的第一形状，并且被配置为耦合到第二电导体。例如，第一表面可以具有第一区域的直线形状，并且第二表面可以具有与第一区域不同的第二区域的直线形状。半导体热电冷却器可以使用薄膜技术制造。

17. 发明申请

US20130168815A1 TEMPERATURE SWITCH WITH RESISTIVE SENSOR 有权
标题翻译：具有电阻传感器的温度开关
公开(公告)号：US20130168815A1
公开(公告)日：2013-07-04
申请号：US13341286
申请日：2011-12-30
申请人： Olivier Le Neel , Ravi Shankar
发明人： Olivier Le Neel , Ravi Shankar
IPC分类号： H01L27/06 , H01L21/02
CPC分类号： G01K7/20 , G01K3/005
摘要： The present disclosure is directed to a device and a method for forming a precision temperature sensor switch with a Wheatstone bridge configuration of four resistors and a comparator. When the temperature sensor detects a temperature above a threshold, the switch will change states. The four resistors in the Wheatstone bridge have the same resistance, with three of the resistors having a low temperature coefficient of resistance and the fourth resistor having a high temperature coefficient of resistance. As the temperature increases, the resistance of the fourth resistor will change. The change in resistance of the fourth resistor will change a voltage across the bridge. The voltage across the bridge is coupled to the comparator and compares the voltage with the threshold temperature, such that when the threshold temperature is exceeded, the comparator switches the output off.
摘要翻译：本公开涉及用于形成具有四个电阻器和比较器的惠斯登电桥配置的精密温度传感器开关的装置和方法。当温度传感器检测到温度高于阈值时，开关将改变状态。惠斯通电桥中的四个电阻具有相同的电阻，其中三个电阻具有低的电阻温度系数，第四电阻具有高的电阻温度系数。随着温度的升高，第四个电阻的电阻将发生变化。第四个电阻器的电阻变化会改变跨桥的电压。桥上的电压耦合到比较器并将电压与阈值温度进行比较，使得当超过阈值温度时，比较器关闭输出。

18. 发明申请

US20130141834A1 CAPACITANCE TRIMMING WITH AN INTEGRATED HEATER 有权
标题翻译：与集成加热器的电容调整
公开(公告)号：US20130141834A1
公开(公告)日：2013-06-06
申请号：US13310466
申请日：2011-12-02
申请人： Olivier Le Neel , Ravi Shankar
发明人： Olivier Le Neel , Ravi Shankar
IPC分类号： H01G4/00 , H01G7/04 , H05K7/06
CPC分类号： H01G7/04 , H01G4/33 , H01L23/345 , H01L23/5223 , H01L23/5228 , H01L27/0688 , H01L28/40 , H01L28/55 , H01L2924/0002 , Y10T29/43 , H01L2924/00
摘要： The present disclosure is directed to a device and a method for achieving a precise capacitance of a capacitor. The method includes trimming a first capacitance of the capacitor to a second capacitance, the capacitor having a first conductive layer separated from a second conductive layer by a dielectric layer. Changing a first dielectric constant of the dielectric layer to a second dielectric constant, where the first dielectric constant corresponding to the first capacitance and the second dielectric constant corresponding to the second dielectric constant includes heating the dielectric layer above a threshold temperature for a time period. The heat is provided by either one of the plates of the capacitor or from a separate heater.
摘要翻译：本公开涉及一种用于实现电容器的精确电容的装置和方法。该方法包括将电容器的第一电容调整为第二电容，该电容器具有通过电介质层与第二导电层分离的第一导电层。将电介质层的第一介电常数改变到第二介电常数，其中对应于第一电容的第一介电常数和对应于第二介电常数的第二介电常数包括将电介质层加热到阈值温度一段时间。热量由电容器的任一个板或从单独的加热器提供。

19. 发明申请

US20130010826A1 MICROSENSOR WITH INTEGRATED TEMPERATURE CONTROL 有权
标题翻译：具有集成温度控制的MICROSENSOR
公开(公告)号：US20130010826A1
公开(公告)日：2013-01-10
申请号：US13176599
申请日：2011-07-05
申请人： Olivier Le Neel , Suman Cherian , Ravi Shankar
发明人： Olivier Le Neel , Suman Cherian , Ravi Shankar
IPC分类号： G01K13/00 , H01L21/02
CPC分类号： G01N27/3272 , G01N33/49
摘要： Microsensors that include an integrated thermal energy source and an integrated temperature sensor are capable of providing localized heating and temperature control of individual sensing regions within the microsensor. Localized temperature control allows analyte detection to be carried out at the same temperatures or substantially the same temperatures at which the sensor is calibrated. By carrying out the sensing near the calibration temperature, more accurate results can be obtained. In addition, the temperature of the sensing region can be controlled so that chemical reactions involving the analyte in the sensing region occur near their peak reaction rate. Carrying out the sensing near the peak reaction rate improves the sensitivity of the sensor which is important as sensor dimensions decrease and the magnitude of the generated signals decreases.
摘要翻译：包括集成热能源和集成温度传感器的微型传感器能够提供微传感器内各个感测区域的局部加热和温度控制。局部温度控制允许分析物检测在相同的温度或基本相同的温度下进行，在此温度下传感器被校准。通过在校准温度附近进行感测，可以获得更准确的结果。此外，可以控制感测区域的温度，使得涉及感测区域中的分析物的化学反应在峰值反应速率附近发生。在峰值反应速率附近进行感测提高了传感器的灵敏度，这在传感器尺寸减小并且产生的信号的幅度减小时是重要的。

20. 发明申请

US20120139076A1 THERMOELECTRIC COOLER SYSTEM, METHOD AND DEVICE 有权
标题翻译：热电冷却系统，方法和装置
公开(公告)号：US20120139076A1
公开(公告)日：2012-06-07
申请号：US12961311
申请日：2010-12-06
申请人： Ravi Shankar , Olivier Le Neel
发明人： Ravi Shankar , Olivier Le Neel
IPC分类号： H01L23/36 , H01L21/02
CPC分类号： H01L23/38 , H01L27/0814 , H01L27/16 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor thermoelectric cooler includes P-type and N-type thermoelectric cooling elements. The P-type and N-type thermoelectric elements have a first portion having a first cross-sectional area and a second portion having a second cross-sectional area larger than the first cross-sectional area. The P-type and N-type thermoelectric cooling elements may, for example, be T-shaped or L-shaped. In another example, the thermoelectric cooling elements have a first surface having a first shape configured to couple to a first electrical conductor and a second surface opposite the first surface and having a second shape, different from the first shape, and configured to couple to a second electrical conductor. For example, the first surface may have a rectilinear shape of a first area and the second surface may have a rectilinear shape of a second area different from the first area. The semiconductor thermoelectric cooler may be manufactured using thin film technology.
摘要翻译：半导体热电冷却器包括P型和N型热电冷却元件。 P型和N型热电元件具有具有第一横截面积的第一部分和具有大于第一横截面积的第二横截面积的第二部分。 P型和N型热电冷却元件例如可以是T形或L形。在另一个示例中，热电冷却元件具有第一表面，该第一表面具有被配置为耦合到第一电导体和与第一表面相对的第二表面并且具有与第一形状不同的第二形状的第一形状，并且被配置为耦合到第二电导体。例如，第一表面可以具有第一区域的直线形状，并且第二表面可以具有与第一区域不同的第二区域的直线形状。半导体热电冷却器可以使用薄膜技术制造。

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