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11. 发明授权

US07910027B2 Semiconductor ceramic composition and method for producing the same 有权
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US07910027B2
公开(公告)日：2011-03-22
申请号：US12281896
申请日：2007-10-26
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： H01B1/08
CPC分类号： H01C7/025 , C01G23/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/4682 , C04B35/6262 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/656 , H01C7/045 , H01C17/06533 , H01G4/1227 , H01G7/06 , H01L21/31691 , H01L28/55
摘要： It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder of a BT calcined powder containing (BaR)TiO3 or Ba(TiM)O3 (wherein each of R and M is a semiconductive dopant), wherein a part of BaCO3 and TiO2 are remained therein; and a BNT calcined powder containing a (BiNa)TiO3 powder.
摘要翻译：旨在提供能够将居里温度向正方向移动以及获得优异的跳跃特性同时将室温电阻率增加至最小值的半导体陶瓷组合物。提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，半导体陶瓷组合物通过烧结含有（BaR）TiO 3或Ba（TiM）O 3的BT煅烧粉末的混合煅烧粉末而获得（其中R和M各自为半导体掺杂剂），其中一部分BaCO 3和TiO 2保留在其中; 和含有（BiNa）TiO 3粉末的BNT煅烧粉末。

12. 发明授权

US07704906B2 Semiconductor porcelain composition and method of producing the same 失效
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US07704906B2
公开(公告)日：2010-04-27
申请号：US11912799
申请日：2006-04-28
申请人： Takeshi Shimada , Koichi Terao , Kazuya Toji
发明人： Takeshi Shimada , Koichi Terao , Kazuya Toji
IPC分类号： H01C7/02 , C04B35/462 , C04B35/468 , C04B35/475 , H01B1/08
CPC分类号： C04B35/4682 , C01G23/006 , C01G29/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/62635 , C04B35/62645 , C04B35/62675 , C04B35/62685 , C04B35/6303 , C04B2235/3201 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/96 , H01C7/025 , H01C17/06533 , H01G4/1227
摘要： A semiconductor porcelain composition [(BiNa)x(Ba1-yRy)1-x]TiO3 with 0
摘要翻译：具有0

13. 发明申请

US20100012905A1 SEMICONDUCTOR CERAMIC COMPOSITION AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US20100012905A1
公开(公告)日：2010-01-21
申请号：US12444895
申请日：2007-10-26
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： H01B1/08
CPC分类号： H01C7/025 , C04B35/4682 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3234 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/6562 , C04B2235/6565 , C04B2235/6584 , H01C17/06533
摘要： It is intended to provide a semiconductor ceramic composition in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of restraining the evaporation of Bi in the calcination step, is capable of restraining the compositional deviation of Bi—Na thereby suppressing the formation of different phases, is capable of further reducing the resistivity at room temperature, and is capable of restraining the fluctuation of the Curie temperature; and to provide a production process of the same. When a calcined Ba(TiM)O3 powder (M is a semiconductor dopant) and a calcined (BaNa)TiO3 powder are separately prepared and the Ba(TiM)O3 powder is calcined at a relatively high temperature while the (BaNa)TiO3 powder is at a relatively low temperature, both at the most suitable temperatures for them, then the evaporation of Bi may be retarded and the compositional deviation of Bi—Na may be thereby suppressed to inhibit the formation of different phases; and when these calcined powders are mixed, formed and sintered, then a semiconductor ceramic composition which has a low resistivity at room temperature and is capable of restraining the fluctuation of the Curie temperature can be obtained.
摘要翻译：旨在提供一种半导体陶瓷组合物，其中BaTiO 3中的Ba的一部分被Bi-Na代替，Bi-Na能够抑制在煅烧步骤中Bi的蒸发，因此能够抑制Bi-Na的组成偏差抑制不同相的形成，能够进一步降低室温下的电阻率，并且能够抑制居里温度的波动; 并提供相同的生产工艺。当分别制备煅烧的Ba（TiM）O 3粉末（M为半导体掺杂剂）和煅烧（BaNa）TiO 3粉末时，并且在较高温度下煅烧Ba（TiM）O 3粉末，而（BaNa）TiO 3粉末为在相对较低的温度下，在它们最适合的温度下，则Bi的蒸发可能被延迟，并且可以抑制Bi-Na的组成偏差以抑制不同相的形成; 并且当将这些煅烧粉末混合，形成和烧结时，可以获得在室温下具有低电阻率并且能够抑制居里温度波动的半导体陶瓷组合物。

14. 发明申请

US20080286185A1 Method of Producing Semiconductor Porcelain Composition 失效
标题翻译：生产半导体瓷组合物的方法
公开(公告)号：US20080286185A1
公开(公告)日：2008-11-20
申请号：US11910222
申请日：2006-03-31
申请人： Takeshi Shimada , Koichi Terao , Kazuya Toji
发明人： Takeshi Shimada , Koichi Terao , Kazuya Toji
IPC分类号： C01F17/00
CPC分类号： H01G4/1227 , C04B35/4682 , C04B35/62695 , C04B35/6303 , C04B2235/3201 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3234 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/6584 , C04B2235/96 , H01C7/025
摘要： Problem:To provide a production method of providing a semiconductor porcelain composition which is capable of shifting a Curie temperature in a positive direction with using Pb and has a considerably reduced resistivity at room temperature, and a method of producing a semiconductor porcelain composition which is capable of providing a property uniform to an inner portion of a material even in a material having a comparatively large and thick shape.Means for Resolution:A method of producing a semiconductor porcelain composition represented by a composition formula [(Bi0.5Na0.5)x(Ba1-yRy)1-x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0
摘要翻译：问题：提供一种提供半导体瓷组合物的制造方法，该半导体瓷组合物能够使用Pb使居里温度向正方向移动，并且在室温下具有显着降低的电阻率，以及制造能够在室温下制造的半导体瓷组合物的方法即使在具有比较大而厚的形状的材料中也能均匀地提供到材料的内部。用于分辨率的方法：由组成式[（Bi 0.5 N Na 0.5 N）x N（Ba

15. 发明申请

US20090105064A1 SEMICONDUCTOR CERAMIC COMPOSITION AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US20090105064A1
公开(公告)日：2009-04-23
申请号：US12299994
申请日：2007-10-26
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： C04B35/468
CPC分类号： H01L21/02197 , C01G29/006 , C01P2006/40 , C04B35/4682 , C04B35/62645 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3234 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6584 , H01C7/025 , H01C7/045 , H01C17/06533 , H01G4/1227 , H01G7/06 , H01L21/02205 , H01L21/02255 , H01L21/31691 , H01L28/55
摘要： To provide a semiconductor ceramic composition containing no Pb in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of shifting the Curie temperate to a positive direction as well as of greatly lowering resistivity at room temperature, and a method for producing the same.BaTiO3 calcined powder and (BiNa)TiO3 calcined powder, which contain no semiconductive dopant, are prepared separately, the calcined powders are mixed, crushed, formed, and then sintered in an inert gas atmosphere having an oxygen concentration of 1% or less to obtain a semiconductor ceramic composition represented by a composition formula: [(BiNa)xBa1-x]TiO3 in which x satisfies 0
摘要翻译：为了提供一种不含Pb的半导体陶瓷组合物，其中BaTiO 3中的Ba的一部分被Bi-Na取代，Bi-Na能够使居里温带向正方向移动以及在室温下极大降低电阻率，以及方法为了生产相同。分别制备不含半导体掺杂剂的BaTiO 3煅烧粉末和（BiNa）TiO 3煅烧粉末，将煅烧粉末混合，粉碎，形成，然后在氧浓度为1％以下的惰性气体气氛中烧结，得到由组成式：[（BiNa）xBa1-x] TiO3表示的半导体陶瓷组合物，其中x满足0

16. 发明申请

US20090057626A1 SEMICONDUCTOR CERAMIC COMPOSITION AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US20090057626A1
公开(公告)日：2009-03-05
申请号：US12281896
申请日：2007-10-26
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： H01B1/02
CPC分类号： H01C7/025 , C01G23/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/4682 , C04B35/6262 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/656 , H01C7/045 , H01C17/06533 , H01G4/1227 , H01G7/06 , H01L21/31691 , H01L28/55
摘要： It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder of a BT calcined powder containing (BaR)TiO3 or Ba(TiM)O3 (wherein each of R and M is a semiconductive dopant), wherein a part of BaCO3 and TiO2 are remained therein, and a BNT calcined powder containing a (BiNa)TiO3 powder.
摘要翻译：旨在提供能够将居里温度向正方向移动以及获得优异的跳跃特性同时将室温电阻率增加至最小值的半导体陶瓷组合物。提供一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，半导体陶瓷组合物通过烧结含有（BaR）TiO 3或Ba（TiM）O 3的BT煅烧粉末的混合煅烧粉末而获得（其中R和M各自为半导体掺杂剂），其中一部分BaCO 3和TiO 2保留在其中，以及含有（BiNa）TiO 3粉末的BNT煅烧粉末。

17. 发明授权

US08067325B2 Semiconductor ceramic composition 有权
标题翻译：半导体陶瓷组合物
公开(公告)号：US08067325B2
公开(公告)日：2011-11-29
申请号：US12280738
申请日：2007-02-27
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： C04B35/00
CPC分类号： H01C7/025 , C01G23/002 , C01G23/006 , C01P2004/03 , C01P2004/62 , C01P2006/32 , C01P2006/40 , C04B35/4682 , C04B35/62675 , C04B35/62685 , C04B35/62818 , C04B2235/3201 , C04B2235/3208 , C04B2235/3224 , C04B2235/3227 , C04B2235/3234 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/608 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/6584 , C04B2235/85 , C04B2235/9661
摘要： It is intended to provide a semiconductor ceramic composition containing no Pb, which is capable of shifting the Curie temperate to a positive direction as well as of controlling room temperature resistivity and having an excellent jump characteristic. Since the semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na has a crystal in which a central part and an outer shell part of a crystal grain are different from each other in composition, the composition is capable of improving control of room temperature resistivity and a jump characteristic, and therefore it is optimum as a material for a PTC thermistor, a PTC heater, a PTC switch, a temperature detector, and the like.
摘要翻译：旨在提供不含Pb的半导体陶瓷组合物，其能够将居里温带向正方向移动以及控制室温电阻率并具有优异的跳跃特性。由于BaTiO 3的Ba的一部分被Bi-Na取代的半导体陶瓷组合物具有其结晶的中心部分和外壳部分的组成彼此不同的结晶，所以组合物能够改善控制室温电阻率和跳跃特性，因此作为PTC热敏电阻，PTC加热器，PTC开关，温度检测器等的材料是最佳的。

18. 发明申请

US20100075825A1 SEMICONDUCTOR PORCELAIN COMPOSITION AND METHOD OF PRODUCING THE SAME 失效
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US20100075825A1
公开(公告)日：2010-03-25
申请号：US12626700
申请日：2009-11-27
申请人： Takeshi Shimada , Koichi Terao , Kazuya Toji
发明人： Takeshi Shimada , Koichi Terao , Kazuya Toji
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C01G23/006 , C01G29/006 , C01P2002/52 , C01P2002/72 , C01P2006/40 , C04B35/62635 , C04B35/62645 , C04B35/62675 , C04B35/62685 , C04B35/6303 , C04B2235/3201 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/96 , H01C7/025 , H01C17/06533 , H01G4/1227
摘要： A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.
摘要翻译：通过分别制备（BaR）TiO 3（R为La，Dy，Eu，Gd或Y）的组合物和（BiNa）TiO 3的组合物并在（a）的温度下煅烧（BaR）TiO 3的组成）来制备半导体陶瓷组合物的温度为900℃至1300℃，并在700℃至950℃下煅烧（BiNa）TiO 3的组成，然后混合，形成和烧结煅烧粉末。类似地，通过分别制备（BaM）TiO 3（M为Nb，Ta或Sb）和（BiNa）TiO 3组成的组合物，并在900℃的温度下煅烧（BaM）TiO 3的组成，制备半导体瓷组合物 ℃至1300℃，并在700℃至950℃的温度下焙烧（BiNa）TiO 3的组成，然后混合，形成和烧结煅烧粉末。

19. 发明申请

US20090036293A1 SEMICONDUCTOR CERAMIC COMPOSITION 有权
公开(公告)号：US20090036293A1
公开(公告)日：2009-02-05
申请号：US12280738
申请日：2007-02-27
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： C04B35/468
CPC分类号： H01C7/025 , C01G23/002 , C01G23/006 , C01P2004/03 , C01P2004/62 , C01P2006/32 , C01P2006/40 , C04B35/4682 , C04B35/62675 , C04B35/62685 , C04B35/62818 , C04B2235/3201 , C04B2235/3208 , C04B2235/3224 , C04B2235/3227 , C04B2235/3234 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5445 , C04B2235/608 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/6584 , C04B2235/85 , C04B2235/9661
摘要： It is intended to provide a semiconductor ceramic composition containing no Pb, which is capable of shifting the Curie temperate to a positive direction as well as of controlling room temperature resistivity and having an excellent jump characteristic. Since the semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na has a crystal in which a central part and an outer shell part of a crystal grain are different from each other in composition, the composition is capable of improving control of room temperature resistivity and a jump characteristic, and therefore it is optimum as a material for a PTC thermistor, a PTC heater, a PTC switch, a temperature detector, and the like.
摘要翻译：旨在提供不含Pb的半导体陶瓷组合物，其能够将居里温带向正方向移动以及控制室温电阻率并具有优异的跳跃特性。由于BaTiO 3的Ba的一部分被Bi-Na取代的半导体陶瓷组合物具有其结晶的中心部分和外壳部分的组成彼此不同的结晶，所以组合物能够改善控制室温电阻率和跳跃特性，因此作为PTC热敏电阻，PTC加热器，PTC开关，温度检测器等的材料是最佳的。

20. 发明授权

US08076256B2 Semiconductor ceramic composition and method for producing the same 有权
标题翻译：半导体陶瓷组合物及其制造方法
公开(公告)号：US08076256B2
公开(公告)日：2011-12-13
申请号：US12445198
申请日：2007-10-26
申请人： Takeshi Shimada , Kazuya Toji
发明人： Takeshi Shimada , Kazuya Toji
IPC分类号： C04B35/00 , C04B35/14 , C04B35/16
CPC分类号： H01C7/025 , C01G23/003 , C01G23/006 , C01G29/006 , C01P2002/54 , C01P2002/72 , C01P2006/40 , C04B35/4682 , C04B35/62675 , C04B35/62685 , C04B2235/3201 , C04B2235/3208 , C04B2235/3227 , C04B2235/3236 , C04B2235/3251 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/608 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , H01C7/045 , H01C17/06533 , H01G4/1227 , H01G7/06 , H01L21/31691 , H01L28/20
摘要： It is intended to provide a Pb-free semiconductor ceramic composition capable of shifting its Curie temperature toward a positive direction and capable of enhancing its jump characteristic while minimizing the increase in the resistivity at room temperature. There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder containing a calcined BT powder containing a calcined powder of (BaR)TiO3 or a calcined powder of Ba(TiM)O3 (in which R and M each are a semiconductor dopant), and a calcined BNT powder containing a calcined powder of (BiNa)TiO3; in which BaCO3 and/or TiO2 is/are added to the calcined BT powder or the calcined BNT powder or to the mixed calcined powder.
摘要翻译：旨在提供能够使其居里温度朝向正方向移动的能够提高其跳跃特性同时最小化室温电阻率增加的无铅半导体陶瓷组合物。提供了一种半导体陶瓷组合物，其中BaTiO 3的Ba的一部分被Bi-Na取代，该半导体陶瓷组合物通过烧结含有煅烧BT粉末的混合煅烧粉末而获得，该煅烧粉末含有（BaR）TiO 3煅烧粉末或（TiM）O 3（其中R和M各自为半导体掺杂剂）的煅烧粉末和包含（BiNa）TiO 3的煅烧粉末的煅烧BNT粉末; 其中将BaCO 3和/或TiO 2添加到煅烧的BT粉末或煅烧的BNT粉末或混合的煅烧粉末中。

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