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    • 11. 发明申请
    • Nonvolatile semiconductor memory and method of manufacturing the same
    • 非易失性半导体存储器及其制造方法
    • US20110217831A1
    • 2011-09-08
    • US13067141
    • 2011-05-11
    • Takeshi Kikuchi
    • Takeshi Kikuchi
    • H01L21/3205
    • H01L29/792H01L27/11568H01L29/66545H01L29/6656
    • A method of forming a nonvolatile semiconductor memory device includes forming a semiconductor substrate, forming upper and lower portions of a first gate electrode on a gate insulating film formed on the semiconductor substrate, the lower portion of the first gate electrode formed on the gate insulating film, the upper portion of the first gate electrode formed on the lower portion of the first gate electrode and having a gate length which is less than a gate length of the lower portion of the first gate electrode, forming a spacer insulating film to contact respective surfaces of the upper and lower portions of the first gate electrode, in which a length of the spacer insulating film combined with the gate length of the upper portion of the first gate electrode is equal to the gate length of the lower portion of the first gate electrode, forming an electric charge trapping film covering a portion of the semiconductor substrate, a surface of the lower portion of the first gate electrode, and a surface of the spacer insulating film, and forming a second gate electrode in a side direction of the first gate electrode and electrically insulated from the first gate electrode by the electric charge trapping film, the second gate electrode having a distance between the upper portion of the first gate electrode that is greater than a distance between the lower portion of the first gate electrode, in which the second gate electrode is separated by the upper portion of the first gate electrode by the electric charge trapping film and the spacer insulating film.
    • 形成非易失性半导体存储器件的方法包括形成半导体衬底,在形成于半导体衬底上的栅极绝缘膜上形成第一栅电极的上部和下部,形成在栅极绝缘膜上的第一栅电极的下部 ,所述第一栅电极的上部形成在所述第一栅电极的下部,并且栅极长度小于所述第一栅电极的下部的栅极长度,形成间隔绝缘膜以接触各个表面 所述第一栅极的上部和下部的所述间隔绝缘膜的长度与所述第一栅电极的上部的栅极长度相结合的长度等于所述第一栅电极的下部的栅极长度 形成覆盖半导体衬底的一部分的电荷捕获膜,第一栅极电极的下部的表面 de和间隔绝缘膜的表面,并且在第一栅电极的侧面方向上形成第二栅电极,并通过电荷捕获膜与第一栅极电绝缘,第二栅电极具有距离 所述第一栅电极的上部比所述第一栅电极的下部与所述第一栅电极的上部与所述第一栅电极的上部分别由所述电荷捕获膜和所述间隔绝缘体 电影。
    • 14. 发明授权
    • Transmission of musical tone information
    • 传播音乐信息
    • US06525253B1
    • 2003-02-25
    • US09337958
    • 1999-06-22
    • Takeshi KikuchiYuji Koike
    • Takeshi KikuchiYuji Koike
    • G10H700
    • G10H1/0066G10H2240/295G10H2240/305G10H2240/315
    • A musical tone information transmitting apparatus that can efficiently transmit musical tone information comprises: a device for inputting musical tone information; a plurality of processing units which jointly process the musical tone information from said input means in distributed processing; a packet generator for measuring an amount of said musical tone information distributedly processed by the plurality of processing units at a predetermined cycle, for extracting and packetizing a predetermined amount of the musical tone information into a first packet when the amount of the musical tone information is greater than the predetermined amount and for further packetizing next musical tone information after said predetermined cycle is lapsed from the time corresponding to the last musical tone information of said first packet; and a device for transmitting said packets generated by said packet generator.
    • 能够有效地发送乐音信息的乐音信息发送装置包括:用于输入乐音信息的装置; 多个处理单元,其以分布式处理联合地处理来自所述输入装置的乐音信息; 分组发生器,用于以预定周期测量由所述多个处理单元分配处理的所述乐音信息的量,用于当所述乐音信息的量为音乐信息的数量时将预定量的所述乐音信息提取和分组为第一分组 大于预定量,并且在从与所述第一分组的最后乐曲信息相对应的时间过去所述预定周期之后进一步分组下一个音调信息; 以及用于发送由所述分组生成器生成的所述分组的装置。
    • 15. 发明授权
    • Manufacturing method of semiconductor device
    • 半导体器件的制造方法
    • US06335289B1
    • 2002-01-01
    • US09525745
    • 2000-03-14
    • Takeshi Kikuchi
    • Takeshi Kikuchi
    • H01L21311
    • H01L27/11521H01L27/115
    • The present invention relates to a method of manufacturing a semiconductor device; which comprises the steps of forming, upon a substrate having a plurality of raised sections on the surface, a polysilicon film so as to fill up recesses formed between these raised sections and, through patterning, forming a polysilicon line therefrom; forming a natural oxidation film or an oxide film with a thickness of 1 nm to 3 nm on the surface of said polysilicon line; forming an additional polysilicon film, and thereafter etching back said additional polysilicon film; forming an insulating film thereon, and thereafter forming sidewalls from said insulating film through eteching back; forming a diffusion region on said substrate; and forming a silicide film over said polysilicon line. According to the present invention, a silicide film can be formed evenly over a polysilicon line that is formed on a stepped substrate so that, with this technique, semiconductor devices having excellent characteristics and reliability can be manufactured with a high yield.
    • 本发明涉及一种制造半导体器件的方法; 该方法包括以下步骤:在表面上具有多个凸起部分的基底上形成多晶硅膜,以填充形成在这些凸起部分之间的凹槽,并通过图案化形成多晶硅线; 在所述多晶硅线的表面上形成厚度为1nm至3nm的自然氧化膜或氧化物膜; 形成另外的多晶硅膜,然后蚀刻所述附加多晶硅膜; 在其上形成绝缘膜,然后通过后退从所述绝缘膜形成侧壁; 在所述衬底上形成扩散区; 以及在所述多晶硅线上形成硅化物膜。 根据本发明,可以在形成在阶梯状基板上的多晶硅线路上均匀地形成硅化物膜,从而可以以高产率制造具有优异特性和可靠性的半导体器件。
    • 19. 发明授权
    • Nonvolatile semiconductor memory and method of manufacturing the same
    • 非易失性半导体存储器及其制造方法
    • US07973356B2
    • 2011-07-05
    • US12285167
    • 2008-09-30
    • Takeshi Kikuchi
    • Takeshi Kikuchi
    • H01L29/792H01L21/8247
    • H01L29/792H01L27/11568H01L29/66545H01L29/6656
    • A nonvolatile semiconductor memory device includes: a semiconductor substrate; a first gate electrode formed on the semiconductor substrate through a gate insulating film; a second gate electrode formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode; and an insulating film formed at least between the semiconductor substrate and the second gate electrode to trap electric charge, as an electric charge trapping film. The first gate electrode comprises a lower portion contacting the gate insulating film and an upper portion above the lower portion of the first gate electrode, and a distance between the upper portion of the first gate electrode and the second gate electrode is longer than a distance between the lower portion of the first gate electrode and the second gate electrode.
    • 非易失性半导体存储器件包括:半导体衬底; 通过栅极绝缘膜形成在所述半导体衬底上的第一栅电极; 第二栅电极,形成在所述第一栅电极的侧方并与所述第一栅极电绝缘; 以及至少形成在半导体衬底和第二栅电极之间以将电荷捕获作为电荷捕获膜的绝缘膜。 第一栅电极包括接触栅极绝缘膜的下部和在第一栅电极的下部上方的上部,并且第一栅电极的上部与第二栅电极之间的距离长于 第一栅电极和第二栅电极的下部。