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11. 发明授权

US08097351B2 Magnetic recording apparatus 有权
标题翻译：磁记录装置
公开(公告)号：US08097351B2
公开(公告)日：2012-01-17
申请号：US11341849
申请日：2006-01-30
申请人： Takeshi Okino , Seiji Morita , Yoshiyuki Kamata , Satoshi Shirotori , Masatoshi Sakurai , Hiroaki Nakamura
发明人： Takeshi Okino , Seiji Morita , Yoshiyuki Kamata , Satoshi Shirotori , Masatoshi Sakurai , Hiroaki Nakamura
IPC分类号： G11B5/66
CPC分类号： G11B5/855
摘要： A magnetic recording apparatus has a magnetic recording media including a substrate and a magnetic layer containing magnetic patterns on the substrate, the magnetic layer including data zones to constitute recoding tracks and servo zones, the magnetic patterns of the servo zones being used as address bits, and a magnetic head configured to read signals from the magnetic recording media while flying over the magnetic recording media, in which, in a case where two magnetic patterns used as address bits on the servo zones corresponding to two adjacent recording tracks are arranged in such a manner that one corner of one magnetic pattern is closest to one corner of the other magnetic pattern, the corners of the two magnetic patterns are substantially separated from each other.
摘要翻译：磁记录装置具有包括基板和在基板上包含磁图案的磁性层的磁记录介质，磁层包括构成记录轨道和伺服区的数据区，伺服区的磁图用作地址位，以及磁头，被配置为在磁记录介质上飞行时从磁记录介质读取信号，其中在用于作为与两个相邻记录轨道对应的伺服区上的地址位的两个磁图案布置在这样的一个磁性图案的一个角最靠近另一个磁性图案的一个角的方式，两个磁性图案的角部基本上彼此分离。

12. 发明授权

US08022401B2 Organic thin film transistor and organic thin film light-emitting transistor 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US08022401B2
公开(公告)日：2011-09-20
申请号：US12514866
申请日：2007-11-13
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/00 , H01L51/50 , H01L27/32
CPC分类号： H01L51/5296 , H01L51/0022 , H01L51/0052 , H01L51/0054 , H01L51/0055 , H01L51/0056 , H01L51/0058 , H01L51/0071 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having a divalent aromatic hydrocarbon group having a phenanthrene structure in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中所述有机半导体层包含其中心具有菲结构的二价芳族烃基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

13. 发明申请

US20110220883A1 COMPOUND FOR ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR USING THE SAME 有权
标题翻译：有机薄膜晶体管及其有机薄膜晶体管的化合物
公开(公告)号：US20110220883A1
公开(公告)日：2011-09-15
申请号：US13057820
申请日：2009-08-05
申请人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
发明人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
IPC分类号： H01L51/52 , H01L51/10 , C07C13/62 , C07C43/20 , C07C321/26 , C07C317/14 , C07C211/50 , C07D207/04 , C07C25/13 , C07C22/04 , C07C255/52
CPC分类号： C07C15/20 , C07C43/2055 , C07C2603/52 , H01L51/0055 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A compound for an organic thin film transistor having a structure of the following formula (1): wherein R1 to R6 are independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 30 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a haloalkoxy group having 1 to 30 carbon atoms, an alkylthio group having 1 to 30 carbon atoms, a haloalkylthio group having 1 to 30 carbon atoms, an alkylamino group having 1 to 30 carbon atoms, a dialkylamino group having 2 to 60 carbon atoms (the alkyl groups may be combined with each other to form a ring structure containing the nitrogen atom), an alkylsulfonyl group having 1 to 30 carbon atoms, a haloalkylsulfonyl group having 1 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an aromatic heterocyclic group having 3 to 60 carbon atoms, an alkylsilyl group having 3 to 20 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms or a cyano group, which each may have a substituent, provided that the compound in which all of R1 to R6 are a hydrogen atom is excluded.
摘要翻译：一种具有下式（1）结构的有机薄膜晶体管的化合物：其中R 1至R 6独立地为氢原子，卤素原子，具有1至30个碳原子的烷基，具有1至30个碳原子的卤代烷基碳原子，碳原子数1〜30的烷氧基，碳原子数1〜30的卤代烷氧基，碳原子数1〜30的烷硫基，碳原子数1〜30的卤代烷硫基，碳原子数为1〜30的烷基氨基碳原子，碳原子数2〜60的二烷基氨基（烷基可以相互结合形成含有氮原子的环结构），碳原子数1〜30的烷基磺酰基，碳原子数1〜30的卤代烷基磺酰基碳原子数为6〜60的芳香族烃基，碳原子数3〜60的芳香族杂环基，碳原子数3〜20的烷基甲硅烷基，碳原子数5〜60的烷基甲硅烷基乙炔基或氰基，其各自可以具有取代基，条件是其中R1至R6全部为氢原子的化合物被排除。

14. 发明申请

US20110031487A1 COMPOUND FOR ORGANIC THIN-FILM TRANSISTOR AND ORGANIC THIN-FILM TRANSISTOR USING THE COMPOUND 有权
标题翻译：有机薄膜晶体管和有机薄膜晶体管的化合物
公开(公告)号：US20110031487A1
公开(公告)日：2011-02-10
申请号：US12936838
申请日：2009-04-02
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/10 , C07D213/06 , C07D277/20 , C07D307/02 , C07D333/08 , C07D495/22 , C07D495/14 , C07D495/04 , C07D401/10 , C07D407/10 , C07D409/10
CPC分类号： H01L51/0052 , H01L51/0074 , H01L51/0558
摘要： A compound for an organic thin film transistor having a structure shown by the following formula (1): X1-L-Ar-L-X2 (1) wherein L is —C≡C—, or —CH═CH— in a trans configuration, X1 and X2 are independently a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and their bonding positions to L are in heterocycles, Ar is a substituted or unsubstituted aromatic hydrocarbon group having 6 to 60 ring carbon atoms, or a substituted or unsubstituted aromatic heterocyclic group having 5 to 60 ring atoms, and at least one of X1, X2 and Ar is a bi- or higher-fused ring.
摘要翻译：一种具有下式（1）所示结构的有机薄膜晶体管的化合物：其中L为-C≡C-的X1-L-Ar-L-X2（1）或反式 X1和X2独立地为取代或未取代的环原子数为5〜60的芳香族杂环基，它们与L的键合位置为杂环，Ar为取代或未取代的碳原子数为6〜60的芳香族烃基，或取代或未取代的环原子数为5〜60的芳香族杂环基，X 1，X 2，Ar中的至少1个为双或更高稠环。

15. 发明申请

US20100246886A1 MOVING OBJECT IMAGE TRACKING APPARATUS AND METHOD 有权
标题翻译：移动对象图像跟踪装置和方法
公开(公告)号：US20100246886A1
公开(公告)日：2010-09-30
申请号：US12550648
申请日：2009-08-31
申请人： Hiroaki Nakamura , Tadashi Kuroiwa
发明人： Hiroaki Nakamura , Tadashi Kuroiwa
IPC分类号： G06K9/00
CPC分类号： G06T7/246 , G06T2207/10016 , G06T2207/30232
摘要： An apparatus includes a first-computation unit computing first-angular-velocity-instruction values for driving first-and-second-rotation units to track a moving object, using a detected tracking error and a detected angles, when the moving object exists in a first range separate from a zenith by at least a preset distance, a second-computation unit computing second-angular-velocity-instruction values for driving the first-and-second-rotation units to track the moving object and avoid a zenith-singular point, using the detected angles, the detected tracking error and an estimated traveling direction, and a control unit controlling the first-and-second-rotation units to eliminate differences between the first-angular-velocity-instruction values and the angular velocities when the moving object exists in the first range, and controlling the first-and-second-rotation units to eliminate differences between the second-angular-velocity instruction values and the angular velocities when the moving object exists in a second range within the preset distance from the zenith.
摘要翻译：一种装置包括第一计算单元，当运动对象存在于一个运动对象中时，使用检测到的跟踪误差和检测到的角度来计算用于驱动第一和第二旋转单元以跟踪运动对象的第一角速度指令值第一范围与天顶分开至少预设距离，第二计算单元计算用于驱动第一和第二旋转单元以跟踪移动物体并避免天顶奇点的第二角速度指令值使用所检测的角度，检测到的跟踪误差和估计的行驶方向，以及控制单元，其控制第一和第二旋转单元以消除当移动时的第一角速度指令值和角速度之间的差异对象存在于第一范围内，并且控制第一和第二旋转单元以消除第二角速度指令值和角速度之间的差异 ving物体存在于距离天顶的预设距离内的第二范围内。

16. 发明授权

US07714319B2 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07714319B2
公开(公告)日：2010-05-11
申请号：US10577325
申请日：2004-10-27
申请人： Hiroaki Nakamura , Hiroshi Yamamoto
发明人： Hiroaki Nakamura , Hiroshi Yamamoto
IPC分类号： H01L51/30 , C07D249/08 , C07D403/00
CPC分类号： H01L51/004 , H01L51/0012 , H01L51/0053 , H01L51/0054 , H01L51/006 , H01L51/0067 , H01L51/0069 , H01L51/007 , H01L51/0072 , H01L51/0541 , H01L51/0545
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulating layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a heterocyclic compound containing a nitrogen atom formed by condensation between five member rings each having a nitrogen atom at their condensation sites or between a five member ring and a six member ring each having a nitrogen atom at their condensation sites. The transistor became to have a fast response speed (driving speed), and further, achieved a large on/off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏极组成的至少三个端子; 绝缘层和有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含含有通过冷凝形成的氮原子的杂环化合物在五个成员环之间，它们各自在它们的缩合位置具有氮原子，也可以是在它们的缩合位置具有氮原子的五元环和六元环之间。晶体管变得具有快速的响应速度（驱动速度），并且进一步实现了大的开/关比，作为晶体管提高了性能。

17. 发明申请

US20100079910A1 MAGNETIC DISK APPARATUS AND INFORMATION REPRODUCING METHOD 有权
标题翻译：磁盘设备和信息再现方法
公开(公告)号：US20100079910A1
公开(公告)日：2010-04-01
申请号：US12542100
申请日：2009-08-17
申请人： Yasushi Tomizawa , Kohsuke Harada , Hiroaki Nakamura , Yoshiyuki Ishihara , Shinji Takakura
发明人： Yasushi Tomizawa , Kohsuke Harada , Hiroaki Nakamura , Yoshiyuki Ishihara , Shinji Takakura
IPC分类号： G11B5/127 , G11B5/82
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/02 , G11B5/743 , G11B5/746 , G11B2005/0005
摘要： A magnetic disk apparatus includes a magnetic disk that includes a plurality of zones in which a plurality of tracks are arranged for each of circumferences of a spiral, and gaps that are arranged between the zones to have a width a predetermined number of times larger than a track width and that are regions without providing recording bits; and a reproducing element that simultaneously makes an access to the recording bits contained in the tracks, reading information stored in the recording bits, wherein the number of the tracks is one or larger and a sum of one and the predetermined number or smaller in one of the zones.
摘要翻译：磁盘装置包括磁盘，该磁盘包括多个区域，其中为每个螺旋周期布置多个轨道，以及布置在该区域之间的间隙，其宽度大于一个轨道宽度，并且是不提供记录位的区域; 以及再现元件，其同时访问包含在轨道中的记录位，读取存储在记录位中的信息，其中轨道的数量是一个或者更多，并且一个和一个之和的和之和小于区域。

18. 发明授权

US07477477B2 Hard disk drive and command execution method 有权
标题翻译：硬盘驱动器和命令执行方法
公开(公告)号：US07477477B2
公开(公告)日：2009-01-13
申请号：US11858354
申请日：2007-09-20
申请人： Kohei Maruchi , Shinji Takakura , Mitsunobu Yoshida , Toshikatsu Akiba , Hiroaki Nakamura
发明人： Kohei Maruchi , Shinji Takakura , Mitsunobu Yoshida , Toshikatsu Akiba , Hiroaki Nakamura
IPC分类号： G11B5/596 , G06F12/00 , G06F7/04
CPC分类号： G11B5/5521 , G06F3/0613 , G06F3/0619 , G06F3/0659 , G06F3/068
摘要： There is provided with command execution method, including; detecting a use situation of a non-volatile memory; selecting, when the use situation is low, the command which enables the disk head to be located at a start position of writing or reading most rapidly from among the write commands and the read commands assuming that the disk head performs the fast seek for the write command and the slow seek for the read command; selecting, when the use situation of the non-volatile memory is high, the command which enables the disk head to be located at the start position of writing or reading most rapidly from among the write commands and the read commands assuming that the disk head performs the slow seek.
摘要翻译：提供了命令执行方法，包括检测非易失性存储器的使用情况; 当使用情况低时，选择使得盘头位于从写入命令和读取命令中最快速地写入或读取的开始位置的命令，假定磁盘头执行用于写入的快速寻道命令和缓慢寻找读命令; 当非易失性存储器的使用状况很高时，选择使得盘头位于写入命令和读取命令之中的最快速写入或读取的开始位置的命令，假定磁盘头执行缓慢寻求。

19. 发明申请

US20080068743A1 Information recording/reproducing device 失效
标题翻译：信息记录/再现装置
公开(公告)号：US20080068743A1
公开(公告)日：2008-03-20
申请号：US11895378
申请日：2007-08-24
申请人： Koichi Kubo , Takahira Hirai , Shinya Aoki , Akihiro Koga , Junichi Akiyama , Shinji Takakura , Hiroaki Nakamura
发明人： Koichi Kubo , Takahira Hirai , Shinya Aoki , Akihiro Koga , Junichi Akiyama , Shinji Takakura , Hiroaki Nakamura
IPC分类号： G11B5/596
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1481
摘要： An information recording/reproducing device according to an example of the present invention includes first and second heads, a recording medium having a data area from which recording data is read by the first head and a servo burst area from which a servo burst signal is read by the second head, a driver which performs positioning of the second head based on the servo burst signal, and a resistor which covers a surface of the servo burst area and does not cover a surface of the data area. The recording data and the servo burst signal are recorded by a pulse signal.
摘要翻译：根据本发明的示例的信息记录/再现装置包括第一和第二磁头，具有数据区的记录介质，由第一磁头读取记录数据和读取伺服脉冲信号的伺服脉冲串区域通过第二头，基于伺服突发信号执行第二头的定位的驱动器，以及覆盖伺服突发区域的表面并且不覆盖数据区域的表面的电阻器。记录数据和伺服脉冲信号由脉冲信号记录。

20. 发明申请

US20070187674A1 Organic thin film transistor 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20070187674A1
公开(公告)日：2007-08-16
申请号：US11369862
申请日：2006-03-08
申请人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
发明人： Hiroaki Nakamura , Masatoshi Saitou , Tetsuo Tsutsui , Takeshi Yasuda
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/0074 , C07C15/52 , C07C22/08 , C07C25/24 , C07C43/215 , H01L51/0023 , H01L51/0038 , H01L51/005 , H01L51/0058 , H01L51/0068 , H01L51/0071 , H01L51/0072 , H01L51/0076 , H01L51/052 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C6H5—CH═CH—C6H5, or a distyryl structure expressed by C6H5—CH═CH—C6H5—CH═CH—C6H5 each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
摘要翻译：一种薄膜晶体管，包括由栅电极，源电极和漏电极组成的至少三个端子; 绝缘体层和衬底上的有机半导体层，其通过在栅电极上施加电压来控制其在源极和漏极之间流动的电流，其中有机半导体层包含具有由C表示的苯乙烯基结构的苯乙烯基衍生物或者由C _{表示的二苯乙烯基结构，或者由C > 6 H 5 -CH-CH-C 6 H 5 -CH-CH-C 6 各自不具有分子量分布。晶体管具有快速的响应速度（驱动速度），并且进一步实现了作为晶体管的增强性能的大的开/关比。}

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