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11. 发明授权

US06316873B1 Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US06316873B1
公开(公告)日：2001-11-13
申请号：US09131339
申请日：1998-08-07
申请人： Hiroshi Ito , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
发明人： Hiroshi Ito , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
IPC分类号： H01J162
CPC分类号： B82Y10/00 , H01J1/312
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a silicide layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层的膜厚为50nm以上。电子供给层具有硅化物层。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

12. 发明授权

US06278230B1 Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US06278230B1
公开(公告)日：2001-08-21
申请号：US09131225
申请日：1998-08-07
申请人： Atsushi Yoshizawa , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Hiroshi Ito , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
发明人： Atsushi Yoshizawa , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Hiroshi Ito , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
IPC分类号： H01J1924
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer has a film thickness of 2.5 &mgr;m or greater. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层的膜厚为50nm以上。电子供给层的膜厚为2.5μm以上。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

13. 发明授权

US06184612B2 Electron emission device with electron supply layer of hydrogenated amorphous silicon 有权
标题翻译：具有氢化非晶硅电子供应层的电子发射装置
公开(公告)号：US06184612B2
公开(公告)日：2001-02-06
申请号：US09131340
申请日：1998-08-07
申请人： Nobuyasu Negishi , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Shingo Iwasaki , Hiroshi Ito , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
发明人： Nobuyasu Negishi , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Shingo Iwasaki , Hiroshi Ito , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
IPC分类号： H01J102
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has a film thickness of 50 nm or greater. The electron-supply layer is made of hydrogenated amorphous silicon. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层的膜厚为50nm以上。电子供应层由氢化非晶硅制成。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

14. 发明授权

US6066922A Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US6066922A
公开(公告)日：2000-05-23
申请号：US131222
申请日：1998-08-07
申请人： Shingo Iwasaki , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Hiroshi Ito , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
发明人： Shingo Iwasaki , Kiyohide Ogasawara , Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Hiroshi Ito , Atsushi Yoshizawa , Takashi Yamada , Shuuichi Yanagisawa , Kazuto Sakemura
IPC分类号： H01J1/312 , H01J29/04 , H01J31/12 , G09G3/10
CPC分类号： B82Y10/00 , H01J1/312
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron-supply layer of metal or semiconductor, an insulator layer formed on the electron-supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer has at a film thickness of 50 nm or greater and a field-stabilizing layer. When an electric field is applied between the electron-supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层的膜厚为50nm以上，场稳定层。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

15. 发明授权

US6130503A Electron emission device and display using the same 失效
标题翻译：电子发射装置和显示器使用相同
公开(公告)号：US6130503A
公开(公告)日：2000-10-10
申请号：US32111
申请日：1998-02-27
申请人： Nobuyasu Negishi , Takamasa Yoshikawa , Takashi Chuman , Kiyohide Ogasawara , Shingo Iwasaki , Hiroshi Ito
发明人： Nobuyasu Negishi , Takamasa Yoshikawa , Takashi Chuman , Kiyohide Ogasawara , Shingo Iwasaki , Hiroshi Ito
IPC分类号： H01J1/312 , H01J1/62
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层由电介质材料制成，膜厚度为50nm以上。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

16. 发明授权

US5990605A Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US5990605A
公开(公告)日：1999-11-23
申请号：US44819
申请日：1998-03-20
申请人： Takamasa Yoshikawa , Kiyohide Ogasawara , Hiroshi Ito , Masataka Yamaguchi , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman
发明人： Takamasa Yoshikawa , Kiyohide Ogasawara , Hiroshi Ito , Masataka Yamaguchi , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman
IPC分类号： H01J1/312 , H01J1/05
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.
摘要翻译：电子发射装置包括：半导体层; 多孔半导体; 和依次层叠的薄膜金属电极。电极面对真空空间。多孔半导体层具有至少两个以上具有在厚度方向上彼此不同的孔隙率的孔隙率变化层。当在半导体层和薄膜金属电极之间施加电场时，电子发射器件发射电子。可以在多孔半导体层和薄膜金属电极之间形成由选自氧化硅或氮化硅的材料制成的绝缘体层。多孔半导体层的Si骨架被氧化或氮化。

17. 发明授权

US6166487A Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US6166487A
公开(公告)日：2000-12-26
申请号：US520213
申请日：2000-03-07
申请人： Nobuyasu Negishi , Takamasa Yoshikawa , Takashi Chuman , Kiyohide Ogasawara , Shingo Iwasaki , Hiroshi Ito
发明人： Nobuyasu Negishi , Takamasa Yoshikawa , Takashi Chuman , Kiyohide Ogasawara , Shingo Iwasaki , Hiroshi Ito
IPC分类号： H01J1/312 , H01J63/04
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘体层由电介质材料制成，膜厚度为50nm以上。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

18. 发明授权

US6144155A Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US6144155A
公开(公告)日：2000-11-07
申请号：US78133
申请日：1998-05-14
申请人： Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
发明人： Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
IPC分类号： H01J1/312 , H01J9/02 , H01J29/04 , H01J31/12 , H01J1/02
CPC分类号： B82Y10/00 , H01J1/312
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘层由电子供给层的氧化或氮化处理形成，膜厚为50nm以上。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

19. 发明授权

US6147443A Electron emission device and display device using the same 失效
标题翻译：电子发射装置及其使用的显示装置
公开(公告)号：US6147443A
公开(公告)日：2000-11-14
申请号：US078138
申请日：1998-05-14
申请人： Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
发明人： Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
IPC分类号： H01J1/312 , H01J29/04 , H01J31/12 , H01L33/00
CPC分类号： B82Y10/00 , H01J1/312
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译：电子发射装置表现出高电子发射效率。该装置包括金属或半导体的电子供应层，形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。绝缘层包含构成电子供给层的化学元素，膜厚为50nm以上。当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。

20. 发明申请

US20080203947A1 Electron Emission Device, and Driving Method Thereof 有权
标题翻译：电子发射装置及其驱动方法
公开(公告)号：US20080203947A1
公开(公告)日：2008-08-28
申请号：US11631487
申请日：2005-06-24
申请人： Nobuyasu Negishi , Kazuto Sakemura , Takamasa Yoshikawa , Kiyohide Ogasawara
发明人： Nobuyasu Negishi , Kazuto Sakemura , Takamasa Yoshikawa , Kiyohide Ogasawara
IPC分类号： G09G3/22
CPC分类号： H01J1/312 , B82Y10/00 , G09G3/22 , G09G2320/043 , H01J29/96 , H01J31/127 , H01J2201/3125 , H01J2329/0484 , H01J2329/96
摘要： Provided is a method of driving an electron emission apparatus used in displays, imaging devices, flat-surface light sources and the like which can restrain a change with time. The method drives the electron emission apparatus including a plurality of electron emission devices each having an electron supply layer formed of silicon, a silicon-based mixture or a compound thereof, an insulator layer formed on the electron supply layer and a thin film metal electrode formed on the insulator layer, the plurality of electron emission devices being sealed and comprises: a driving step for supplying power between the electron supply layer and the thin film metal electrode to cause electrons to be emitted from the electron emission device and a reactivating step for applying a reactivating voltage at a level equal to or higher than an applied voltage value which causes discontinuity in differential value of the device current flowing between the electron supply layer and the thin film metal electrode with respect to the applied voltage after the driving step.
摘要翻译：提供一种驱动可以随时间抑制变化的显示器，成像装置，平面光源等中使用的电子发射装置的方法。该方法驱动电子发射装置，其包括多个电子发射装置，每个电子发射装置具有由硅形成的电子供体层，硅基混合物或其化合物，形成在电子供应层上的绝缘体层和形成的薄膜金属电极在所述绝缘体层上，所述多个电子发射器件被密封，并且包括：驱动步骤，用于在所述电子供给层和所述薄膜金属电极之间供电，以使电子从所述电子发射器件发射;以及再激活步骤，在等于或高于所施加的电压值的电平上的再激活电压，其导致在驱动步骤之后相对于施加的电压在电子供应层和薄膜金属电极之间流动的器件电流的差分值的不连续性。

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