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11. 发明授权

US5162886A Hall device 失效
标题翻译：霍尔设备
公开(公告)号：US5162886A
公开(公告)日：1992-11-10
申请号：US697441
申请日：1991-05-09
申请人： Yoshiki Nishibayashi , Hideaki Nakahata , Hiromu Shiomi , Naoji Fujimori
发明人： Yoshiki Nishibayashi , Hideaki Nakahata , Hiromu Shiomi , Naoji Fujimori
IPC分类号： G01R33/07 , H01L43/06 , H01L43/10
CPC分类号： H01L43/065 , Y10T428/265 , Y10T428/30
摘要： A Hall device having an active part made from semiconductor diamond. The Hall device works even at high temperature or in corrosive atmosphere. Boron doped diamond is suitable for controlling the acceptor concentration.

12. 发明授权

US5221870A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5221870A
公开(公告)日：1993-06-22
申请号：US767624
申请日：1991-09-30
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
IPC分类号： G06G7/195 , H03F13/00 , H03H9/02 , H03H9/68
CPC分类号： H03H9/68 , G06G7/195 , H03F13/00 , H03H9/02976
摘要： Surface acoustic wave devices making use of the interaction between surface acoustic wave and carriers include at least a semiconductor part, a piezoelectric layer and an intermediate insulating film. The devices of this invention include diamond or diamond-like carbon as the insulating film in contact with the piezoelectric layer. Since diamond or diamond-like carbon has the highest sound velocity, the surface acoustic wave velocity is extremely high in the piezoelectric layer in contact with diamond or diamond-like carbon. The high surface acoustic wave velocity alleviates the need of producing fine inter digital transducers. This invention is applicable to surface acoustic wave phase-shifters, surface acoustic amplifiers and surface acoustic convolvers.
摘要翻译：利用声表面波和载流子之间的相互作用的表面声波装置至少包括半导体部分，压电层和中间绝缘膜。本发明的装置包括金刚石或类金刚石碳作为与压电层接触的绝缘膜。由于金刚石或类金刚石碳具有最高的声速，因此在与金刚石或类金刚石碳接触的压电层中，表面声波速度非常高。高表面声波速度减轻了生产精细的数字间换能器的需要。本发明适用于声表面波移相器，声表面放大器和表面声音卷积器。

13. 发明授权

US6051063A Diamond wafer and method of producing a diamond wafer 失效
标题翻译：金刚石晶片及其制造方法
公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译：一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。晶片单调失真，失真高度H满足2微米

14. 发明授权

US5160869A Surface acoustic wave device 失效
公开(公告)号：US5160869A
公开(公告)日：1992-11-03
申请号：US634321
申请日：1990-12-26
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device which comprises a diamond or diamond-like carbon layer, a ZnO piezoelectric layer and a comb-like electrode and has a structure having a large surface wave propagation velocity and a large electromechanical coupling factor which are achieved by defining a thickness of the ZnO layer and a mode.

15. 发明授权

US5081438A Thermistor and its preparation 失效
标题翻译：热敏电阻及其制备
公开(公告)号：US5081438A
公开(公告)日：1992-01-14
申请号：US506191
申请日：1990-04-09
申请人： Hideaki Nakahata , Naoji Fujimori
发明人： Hideaki Nakahata , Naoji Fujimori
IPC分类号： H01C7/04 , H01C17/14
CPC分类号： H01C7/041 , H01C17/14 , Y10T29/49085
摘要： A thermistor having a temperature detecting part which has a temperature sensing part made of a vapor phase deposited semiconductive diamond film, a metal electrode layer formed on one surface of the semiconductive diamond film, and at least one lead wire connected with the metal electrode layer provided that at least 50% of a total volume of the temperature sensing part and the metal electrode layer is made of the vapor phase deposited diamond.

16. 发明授权

US5776246A Diamond wafer and method of producing a diamond wafer 失效
公开(公告)号：US5776246A
公开(公告)日：1998-07-07
申请号：US418116
申请日：1995-04-06
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
IPC分类号： C23C16/27 , C30B25/02 , H03H3/08 , H03H9/02 , C30B29/04
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.

17. 发明授权

US5463901A Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack 失效
标题翻译：堆叠中的叠氮化硼层叠压电声表面波器件
公开(公告)号：US5463901A
公开(公告)日：1995-11-07
申请号：US283251
申请日：1994-07-29
申请人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
发明人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , G01L9/00 , H04R31/00
CPC分类号： H03H9/02574 , Y10T29/49005
摘要： A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).
摘要翻译：相对容易加工的氮化硼层位于与压电元件紧密接触的堆叠结构中，以提供能够在较高频率范围内驱动的声表面波器件。这种表面声学装置（10）具有基板（1），形成在基板（1）上的氮化硼膜（2）和形成在氮化硼膜（2）上的一对叉指电极（3a，3b）。叉指电极（3a，3b）被与氮化硼膜（2）紧密接触的压电膜（4）覆盖。

18. 发明授权

US5390401A Method for producing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5390401A
公开(公告)日：1995-02-21
申请号：US103729
申请日：1993-08-06
申请人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H01L41/22
CPC分类号： H03H9/02574 , H03H3/08 , H03H9/1092 , Y10T29/42
摘要： A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).
摘要翻译：表面声波装置的制造使其可靠性增加，并且其表面可安装，而不需要包装。表面声波装置（20）具有与叉指电极（2a，2b）紧密接触的一对相对的叉指电极（2a，2b）和压电元件（4）。位于一对叉指电极（2a，2b）之间的部分传播表面声波。该装置（20）的特征在于，覆盖压电部件（4）的部分以传播表面声波的空气桥（13）和一对叉指电极（2a，2b）。空气桥（13）可以设置有不与压电构件（4）接触的绝缘膜（14）。

19. 发明授权

US06661152B2 Diamond substrate for surface acoustic wave device, and surface acoustic wave device 失效
标题翻译：表面声波装置用金刚石基板，表面声波装置
公开(公告)号：US06661152B2
公开(公告)日：2003-12-09
申请号：US10264264
申请日：2002-10-04
申请人： Keiji Ishibashi , Takahiro Imai , Tomoki Uemura , Daichi Kawaguchi , Hideaki Nakahata , Satoshi Fujii
发明人： Keiji Ishibashi , Takahiro Imai , Tomoki Uemura , Daichi Kawaguchi , Hideaki Nakahata , Satoshi Fujii
IPC分类号： H03H925
CPC分类号： H03H9/02582
摘要： A diamond film is deposited in the thickness of 20 &mgr;m on a silicon wafer 0.8 mm thick by filament CVD. Here the hydrogen content of the diamond film is adjusted in the range of not less than 1% nor more than 5% in atomic percent. By mechanical polishing with a grinding wheel including diamond abrasives, the diamond film is smoothed so that the arithmetic mean roughness (Ra) of the surface thereof becomes not more than 20 nm.
摘要翻译：通过灯丝CVD在0.8mm厚的硅晶片上沉积厚度为20μm的金刚石膜。这里，将金刚石膜的氢含量调整为原子百分比为1％以上5％以下的范围。通过用包括金刚石磨料的砂轮进行机械抛光，使金刚石膜平滑，使得其表面的算术平均粗糙度（Ra）不超过20nm。

20. 发明授权

US06710513B2 Surface acoustic wave device and substrate thereof 有权
标题翻译：声表面波器件及其衬底
公开(公告)号：US06710513B2
公开(公告)日：2004-03-23
申请号：US10203423
申请日：2002-08-08
申请人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
发明人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02582 , H03H9/02574
摘要： Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.
摘要翻译：提供一种用于控制压电层的晶体特性的中间层不容易与金刚石层分离的表面声波器件和表面声波器件的基板。表面声波器件根据本发明的衬底20和表面声波器件10包括金刚石层22，设置在金刚石层22上的中间层24和设置在中间层24上的压电层26，压电层 26由LiNbO 3或LiTaO 3制成，中间层24由AlN制成。

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