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11. 发明授权

US06495392B2 Process for producing a semiconductor device 有权
标题翻译：半导体装置的制造方法
公开(公告)号：US06495392B2
公开(公告)日：2002-12-17
申请号：US09911172
申请日：2001-07-23
申请人： Akira Sakai , Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Tadashi Sawayama , Yuzo Koda , Takahiro Yajima
发明人： Akira Sakai , Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Tadashi Sawayama , Yuzo Koda , Takahiro Yajima
IPC分类号： H01L2100
CPC分类号： H01L31/075 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A process for producing a semiconductor device such as a photovoltaic element including a solar cell or a photosensor having a photoelectric conversion semiconductor layer formed by sequentially forming a p-type or n-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, an i-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material, and an n-type or p-type semiconductor layer composed of a non-single crystalline silicon series semiconductor material on a substrate by means of plasma CVD, characterized in that at least one i-type semiconductor as said i-type semiconductor layer is formed in a discharge chamber having a cathode electrode by means of VHF plasma CVD using a silicon-containing raw material gas, wherein a VHF power of a wattage which is two times or less that of a VHF power required for decomposing 100% of said silicon-containing raw material gas is applied to said cathode electrode.
摘要翻译：一种用于制造半导体器件的方法，诸如包括太阳能电池的光电元件或具有光电转换半导体层的光电传感器的光电元件，其顺序地形成由非单晶硅系列半导体材料构成的p型或n型半导体层由非单晶硅系列半导体材料构成的i型半导体层和由等离子体CVD在基板上的非单晶硅系半导体材料构成的n型或p型半导体层，其特征在于，通过使用含硅原料气体的VHF等离子体CVD，在具有阴极的放电室中形成至少一个作为所述i型半导体层的i型半导体，其中，功率的VHF功率是分解100％的所述含硅原料气体所需的VHF功率的两倍或更少被施加到所述阴极。

12. 发明授权

US06287943B1 Deposition of semiconductor layer by plasma process 有权
标题翻译：通过等离子体工艺沉积半导体层
公开(公告)号：US06287943B1
公开(公告)日：2001-09-11
申请号：US09363825
申请日：1999-07-30
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Koda , Takahiro Yajima
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Koda , Takahiro Yajima
IPC分类号： H01L2120
CPC分类号： C23C16/509 , H01J37/32082 , H01J37/32706 , H01L21/02425 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L31/1824 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/545 , Y02P70/521
摘要： The invention provides a process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.
摘要翻译：本发明提供一种通过将原料气体引入放电室并向室内供给高频电力以通过放电分解原料气体从而在放电室内的基板上形成半导体层来制造半导体层的方法，过程包括以下步骤：提供至少非常高频（VHF）的高频功率作为高频功率; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内放电室内壁面积。高质量的半导体层可以在大面积上高速沉积。

13. 发明授权

US06877458B2 Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US06877458B2
公开(公告)日：2005-04-12
申请号：US09797566
申请日：2001-03-05
申请人： Hiroyuki Ozaki , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Tadashi Hori
发明人： Hiroyuki Ozaki , Shotaro Okabe , Masahiro Kanai , Yuzo Koda , Tadashi Hori
IPC分类号： C23C16/455 , C23C16/44 , C23C16/509 , C23C16/54 , H01L21/205 , H01L31/04 , C23C16/00
CPC分类号： H01J37/32834 , C23C16/4412 , C23C16/5096 , C23C16/545
摘要： To provide an apparatus for forming a deposited film, which is a parallel plate electrode type CVD apparatus, with a discharge vessel receiving a material gas flowing therein and discharging air therefrom, decomposing the material gas by the aid of a plasma generated therein, and depositing the film on the substrate, in which the exhaust port of the material gas exhaust means has an opening wider in the lateral direction than the parallel plate electrode. This structure diminishes the stagnant region of the material gas during the deposited film forming process and controls formation of by-products, to deposit the film uniform in quality and thickness.
摘要翻译：为了提供一种用于形成沉积膜的装置，其是平行板电极型CVD装置，放电容器容纳在其中流动的材料气体并从其中排出空气，借助于其中产生的等离子体分解原料气体，并沉积基板上的材料气体排出装置的排气口的横向方向上的开口比平行板电极宽。这种结构减少了沉积膜形成过程期间材料气体的停滞区域，并且控制副产物的形成，以使膜在质量和厚度上均匀。

14. 发明申请

US20090114155A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090114155A1
公开(公告)日：2009-05-07
申请号：US12327403
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23C16/46
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

15. 发明申请

US20090084500A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
标题翻译：加工设备，排气加工过程和等离子体处理工艺
公开(公告)号：US20090084500A1
公开(公告)日：2009-04-02
申请号：US12326238
申请日：2008-12-02
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： C23F1/08 , C23C16/00 , C23C14/34
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要翻译：公开了一种处理衬底或膜的处理装置的废气处理过程，其包括在处理基板或膜之后，将未反应的气体和/或副产物引入陷阱装置，由包含钨，钼和铼中的至少一种作为主要成分的高熔点金属材料构成的长丝; 以及处理陷阱装置内的未反应气体和/或副产物。这使得可以防止排气电导降低，延长加工设备的维护周期，并且提供高质量的产品（经处理的基板或膜）。

16. 发明申请

US20090095420A1 PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS 审中-公开
公开(公告)号：US20090095420A1
公开(公告)日：2009-04-16
申请号：US12327428
申请日：2008-12-03
申请人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
发明人： Tadashi Sawayama , Yasushi Fujioka , Masahiro Kanai , Shotaro Okabe , Yuzo Kohda , Tadashi Hori , Koichiro Moriyama , Hiroyuki Ozaki , Yukito Aota , Atsushi Koike , Mitsuyuki Niwa , Yasuyoshi Takai , Hidetoshi Tsuzuki
IPC分类号： H01L21/3065 , B05C9/08 , H01L21/302
CPC分类号： H01L21/67017 , C23C16/24 , C23C16/4412 , C23C16/545 , H01J37/3244 , H01J37/32834 , H01J37/32844 , Y02C20/30 , Y02P70/605
摘要： There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).

17. 发明授权

US5927994A Method for manufacturing thin film 失效
标题翻译：薄膜制造方法
公开(公告)号：US5927994A
公开(公告)日：1999-07-27
申请号：US782811
申请日：1997-01-13
申请人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： G03G5/08 , C23C16/50 , C23C16/54 , H01J37/32 , H01L21/205 , H01L31/04 , H01L31/20 , H01L21/20 , H01L21/36
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32541 , H01J37/3277 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A method of manufacturing thin films by plasma CVD is described. This method comprises supplying power to a power electrode in a way such that a self-bias upon plasma discharge of the power applying electrode, which is situated in a plasma discharge space, is a positive potential relative to a ground electrode.
摘要翻译：描述了通过等离子体CVD制造薄膜的方法。该方法包括以这样的方式向功率电极供电，使得位于等离子体放电空间中的功率施加电极的等离子体放电的自偏压相对于接地电极为正电位。

18. 发明授权

US5919310A Continuously film-forming apparatus provided with improved gas gate means 失效
标题翻译：连续成膜装置具有改进的气门装置
公开(公告)号：US5919310A
公开(公告)日：1999-07-06
申请号：US610076
申请日：1996-02-29
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
IPC分类号： C23C16/54 , C23C16/00
CPC分类号： C23C16/545
摘要： A continuous film-forming apparatus includes a plurality of reaction chambers each capable of forming a semiconductor film with a different chemical composition. The reaction chambers are arranged such that a substrate web on which a film is to be formed can be hermetically moved through each of the reaction chambers under a vacuum condition. A gas gate is disposed at a central position between each pair of adjacent reaction chambers, with each gas gate provided with a slit for communication between the adjacent reaction chambers. The slit is provided with a clearance which allows the substrate web to move therethrough, is structured such that gate gas can be introduced therein from above and beneath the substrate which is moved through the clearance, and is dimensioned such that opposite sides proximate to the position where the gate gas is introduced have different heights in accordance with the inner pressure upon film formation of each of the adjacent reaction chambers in communication with each other by the slit.
摘要翻译：连续成膜装置包括能够形成化学成分不同的半导体膜的多个反应室。反应室被布置成使得在其上形成膜的基材网可以在真空条件下气密地移动通过每个反应室。气门设置在每对相邻反应室之间的中心位置处，每个气门设置有用于在相邻反应室之间连通的狭缝。狭缝设置有允许衬底腹板通过其移动的间隙，其结构使得可以从移动通过间隙的衬底的上方和下方将栅极气体引入其中，并且其尺寸使得接近位置的相对侧其中引入的栅极气体根据通过狭缝彼此连通的每个相邻反应室的成膜时的内部压力具有不同的高度。

19. 发明授权

US6153013A Deposited-film-forming apparatus 失效
标题翻译：沉积膜形成装置
公开(公告)号：US6153013A
公开(公告)日：2000-11-28
申请号：US800512
申请日：1997-02-14
申请人： Akira Sakai , Shotaro Okabe , Masahiro Kanai , Yuzo Kohda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Akira Sakai , Shotaro Okabe , Masahiro Kanai , Yuzo Kohda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： C23C16/44 , C23C16/54 , H01L31/0392 , H01L31/20 , C23C16/06
CPC分类号： C23C16/4409 , C23C16/44 , C23C16/545 , H01L31/03921 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： The deposited-film-forming apparatus of the present invention is an apparatus for forming deposited films while continuously passing a belt-like member through the insides of a plurality of vacuum chambers connected via connecting members and superposingly forming a plurality of different thin films on the surface of the belt-like member by plasma-assisted CVD, wherein the vacuum chambers are fixed to a stand for supporting the vacuum chambers, and a mechanism for relaxing stress acting in the transport direction of the belt-like member, generated in the vacuum chambers by the action of expansion and contraction due to thermal expansion of the vacuum chambers, is provided between each vacuum chamber and each connecting member.
摘要翻译：本发明的沉积膜形成装置是一种用于形成沉积膜的装置，同时连续地通过带状构件穿过连接件的多个真空室的内部并在其上重叠地形成多个不同的薄膜通过等离子体辅助CVD形成带状构件的表面，其中真空室被固定到用于支撑真空室的支架上，以及用于放松在真空中产生的带状构件的传送方向上作用的应力的机构在每个真空室和每个连接构件之间设置由于真空室的热膨胀而引起的膨胀和收缩的作用的腔室。

20. 发明授权

US5589007A Photovoltaic elements and process and apparatus for their formation 失效
标题翻译：光伏元件及其形成的工艺和设备
公开(公告)号：US5589007A
公开(公告)日：1996-12-31
申请号：US523169
申请日：1995-09-05
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Hideo Tamura , Atsushi Yasuno , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Hideo Tamura , Atsushi Yasuno , Akira Sakai , Tadashi Hori
IPC分类号： H01L21/205 , H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.
摘要翻译：光电元件包括第一导电类型的第一非单晶硅含硅半导体层，通过微波等离子体CVD形成的第一i型非单晶含硅半导体层，第二i型非单晶硅含硅半导体层，通过高频等离子体CVD形成的含硅半导体层和与第一导电型相反的导电类型的第二非单晶硅含量半导体层，其中通过等离子体掺杂形成第二半导体层。

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