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11. 发明授权

US07724463B2 Disk drive device and method for removing adhesion on a head 有权
标题翻译：磁盘驱动装置和去除头部附着力的方法
公开(公告)号：US07724463B2
公开(公告)日：2010-05-25
申请号：US12220719
申请日：2008-07-25
申请人： Taichi Nakamura , Mitsuhiko Oguchi , Yasunori Kawamoto
发明人： Taichi Nakamura , Mitsuhiko Oguchi , Yasunori Kawamoto
IPC分类号： G11B21/02
CPC分类号： G11B5/41 , G11B21/12
摘要： Embodiments of the present invention help to effectively remove adhesion on a head slider. In an embodiment of the present invention, a hard disk controller/multiprocessing unit (HDC/MPU) raises the temperature on the surface of a head slider with a heating element on the head slider to remove adhesion on the head slider while an actuator stays on a ramp. The HDC/MPU varies the amount of heat in accordance with the temperature sensed by a temperature sensor. This achieves removal of the adhesion on the head slider, maintaining reliability.
摘要翻译：本发明的实施例有助于有效地去除头部滑块上的粘附。在本发明的一个实施例中，硬盘控制器/多处理单元（HDC / MPU）在磁头滑动器上使用加热元件在磁头滑块的表面上升高温度，以在致动器保持开启时去除磁头滑块上的粘附一个坡道 HDC / MPU根据温度传感器感测到的温度来改变热量。这实现了去除头滑块上的粘附力，保持了可靠性。

12. 发明授权

US5868358A Rendezvous spacecraft collision avoidance device 失效
标题翻译：会合航天器碰撞避免装置
公开(公告)号：US5868358A
公开(公告)日：1999-02-09
申请号：US844243
申请日：1997-04-18
申请人： Taichi Nakamura
发明人： Taichi Nakamura
IPC分类号： B64G1/26 , B64G1/64 , B64G1/40
CPC分类号： B64G1/26 , B64G1/646
摘要： In the present invention four thrusters are provided as a group of thrusters for collision avoidance. These thrusters contain a component of translational thrust for collision avoidance injection in their respective outputs, and are capable of simultaneously generating posture control torque around two coordinate axes, which are orthogonal to a thrust axis, in order to maintain the directional stability of the thrust axis during the injection. When abnormality arises in a group of thrusters for ordinary use, collision avoidance is executed by replacing all the thrusters for ordinary use by these thrusters for collision avoidance.
摘要翻译：在本发明中，四个推进器被设置为一组用于防止碰撞的推进器。这些推进器在其各自的输出中包含用于避免碰撞注入的平移推力的分量，并且能够同时产生与推力轴正交的两个坐标轴周围的姿势控制扭矩，以便保持推力轴的方向稳定性在注射期间。当普通用途的一组推进器发生异常时，通过用这些推进器替代普通用途的所有推进器来实现防撞，从而避免碰撞。

13. 发明申请

US20140103531A1 BONDED STRUCTURE 审中-公开
标题翻译：粘结结构
公开(公告)号：US20140103531A1
公开(公告)日：2014-04-17
申请号：US14123657
申请日：2012-05-22
申请人： Taichi Nakamura , Hidetoshi Kitaura , Akihiro Yoshizawa
发明人： Taichi Nakamura , Hidetoshi Kitaura , Akihiro Yoshizawa
IPC分类号： H01L23/498
CPC分类号： H01L23/49866 , B23K35/007 , B23K35/0233 , B23K35/264 , B32B15/01 , B32B15/016 , C22C5/06 , C22C5/08 , C22C9/00 , C22C12/00 , C22C13/00 , C22C13/02 , H01L23/3107 , H01L23/49513 , H01L23/49551 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L2224/04026 , H01L2224/05647 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/32507 , H01L2224/45014 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83075 , H01L2224/83101 , H01L2224/83191 , H01L2224/83203 , H01L2224/83439 , H01L2224/8382 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/15747 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00012 , H01L2924/00 , H01L2924/0105 , H01L2924/01047 , H01L2924/01082 , H01L2924/00015 , H01L2924/01083 , H01L2924/013 , H01L2924/01007 , H01L2224/45099 , H01L2224/83205 , H01L2924/206
摘要： A bonded structure 106 includes a semiconductor element 102 bonded to a Cu electrode 103 with a bonding material 104 predominantly composed of Bi, wherein the semiconductor element 102 and the Cu electrode 103 are bonded to each other via a laminated body 209a that progressively increases a Young's modulus from the bonding material 104 to a bonded material (the semiconductor element 102 and the Cu electrode 103), achieving stress relaxation against a thermal stress generated in a temperature cycle during the use of a power semiconductor module.
摘要翻译：键合结构106包括：接合材料104主要由Bi构成的接合于Cu电极103的半导体元件102，其中半导体元件102和Cu电极103通过层叠体209a彼此接合，层叠体209a逐渐增加Young 从接合材料104到接合材料（半导体元件102和Cu电极103）的模量，在功率半导体模块的使用期间，实现在温度循环中产生的热应力的应力松弛。

14. 发明授权

US08691377B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08691377B2
公开(公告)日：2014-04-08
申请号：US13259009
申请日：2010-04-22
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要翻译：本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％中心部分。

15. 发明授权

US08598464B2 Soldering material and electronic component assembly 有权
标题翻译：焊料和电子元器件组装
公开(公告)号：US08598464B2
公开(公告)日：2013-12-03
申请号：US12999411
申请日：2010-04-19
申请人： Shigeaki Sakatani , Akio Furusawa , Kenichiro Suetsugu , Taichi Nakamura
发明人： Shigeaki Sakatani , Akio Furusawa , Kenichiro Suetsugu , Taichi Nakamura
IPC分类号： H05K1/16 , B23K31/00 , C22C13/02
CPC分类号： H05K3/3463 , B23K35/262 , B23K2101/36 , B32B15/01 , C22C13/00 , H05K3/3442 , H05K2201/10992 , Y02P70/613
摘要： A solder material includes 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part of an electronic component is connected to a copper-containing electrode land of a substrate by using this solder material, a part having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound can be rapidly grown from the electrode land and the electrode part to form a strong blocking structure.
摘要翻译：焊料材料包括1.0-4.0重量％的Ag，4.0-6.0重量％的In，0.1-1.0重量％的Bi，1重量％以下（不包括0重量％）的1个或选自由Cu，Ni，Co，Fe和Sb组成的组中的更多元素，以及Sn的剩余部分。当通过使用该焊料将电子部件的含铜电极部分连接到基板的含铜电极焊盘时，可以在焊料连接部分中形成具有优异的应力松弛特性的部分， Sn金属间化合物可以从电极焊盘和电极部分快速生长，形成强阻挡结构。

16. 发明授权

US08268718B2 Bonded structure and manufacturing method for bonded structure 有权
标题翻译：粘结结构的粘结结构和制造方法
公开(公告)号：US08268718B2
公开(公告)日：2012-09-18
申请号：US13007693
申请日：2011-01-17
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L21/44
CPC分类号： H01L24/29 , H01L23/49513 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29 , H01L2224/29101 , H01L2224/2929 , H01L2224/29313 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/83464 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/181 , H01L2924/00 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01013 , H01L2924/01025 , H01L2924/01015 , H01L2924/01016 , H01L2924/01034 , H01L2924/3512 , H01L2924/01028 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
摘要翻译：一种接合结构的制造方法，其中半导体器件通过接合部分接合到电极上，所述方法包括：首先将其中Bi球的表面涂覆有Ni镀层的焊球安装在电极上加热到等于或大于Bi的熔点的温度; 第二次将焊球压在加热电极上，破裂Ni镀层，将熔融的Bi扩散到加热电极的表面，并形成含有Bi和Ni的Bi基金属间化合物的接合材料; 并且第三将半导体器件安装在接合材料上。

17. 发明申请

US20120018890A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120018890A1
公开(公告)日：2012-01-26
申请号：US13259009
申请日：2010-04-22
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要翻译：本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％中心部分。

18. 外观设计

USD630657S1 Shaft portion of an apparatus for holding and heating semiconductor wafers or the like 有权
公开(公告)号：USD630657S1
公开(公告)日：2011-01-11
申请号：US29323534
申请日：2008-08-27
申请人： Taichi Nakamura
设计人： Taichi Nakamura

19. 发明授权

US07787218B2 Data storage device 有权
标题翻译：数据存储设备
公开(公告)号：US07787218B2
公开(公告)日：2010-08-31
申请号：US11707534
申请日：2007-02-16
申请人： Takaaki Deguchi , Mutsuro Ohta , Shingo Tsuda , Taichi Nakamura
发明人： Takaaki Deguchi , Mutsuro Ohta , Shingo Tsuda , Taichi Nakamura
IPC分类号： G11B5/54
CPC分类号： G11B5/54
摘要： Embodiments in accordance with the present invention relate to suppressing deterioration in rigidity and dynamic characteristics of a tab even when an initial point of contact between a tab and a ramp during unloading is set closer to the outer periphery of a disk. A data storage device in one embodiment of the present invention includes a head, a ramp for unloading the head, a load beam having a head support portion for supporting the head and a tab adapted to slide on a sliding surface of the ramp on a front end side with respect to the head support portion, and an actuator having the load beam and adapted to actuate the head for loading and unloading. During unloading, a portion of the tab offset from the center in the transverse direction of the tab first comes into contact with the sliding surface of the ramp. The load beam has a flange formed to be bent and continuously from the front end portion of the tab up to both ends of the head support portion.
摘要翻译：根据本发明的实施例涉及抑制突片的刚度和动态特性的劣化，即使在卸载期间突片和斜坡之间的初始接触点被设置成更接近盘的外周。本发明的一个实施例中的数据存储装置包括头部，用于卸载头部的斜面，负载梁，其具有用于支撑头部的头部支撑部分和适于在前部的斜面的滑动表面上滑动的突出部相对于头部支撑部分的端侧，以及具有负载梁并且适于致动头部用于装载和卸载的致动器。在卸载期间，从突片的横向方向上的中心偏离的突片的一部分首先与斜面的滑动表面接触。负载梁具有形成为从凸起的前端部直到头部支撑部的两端连续弯曲的凸缘。

20. 发明申请

US20100215523A1 FUEL SUPPLY DEVICE 有权
标题翻译：燃油供应装置
公开(公告)号：US20100215523A1
公开(公告)日：2010-08-26
申请号：US12711405
申请日：2010-02-24
申请人： Bunji Homma , Takao Ikarugi , Taichi Nakamura , Yasunori Fukushima , Takeshi Yanagisawa , Masayuki Toriyama , Naoyuki Yamate
发明人： Bunji Homma , Takao Ikarugi , Taichi Nakamura , Yasunori Fukushima , Takeshi Yanagisawa , Masayuki Toriyama , Naoyuki Yamate
IPC分类号： F04B17/03
CPC分类号： F04B17/03 , F02M37/103 , F04D5/002
摘要： Male terminals 83 are respectively provided in terminal attachment portions 82 formed on a flange unit 7. Female terminals 84 and grommets 85 are provided for a harness 17. A seal lip portion 86 to be fitted into each of the terminal attachment portions 82 is formed on each of the grommets 85. In the cylindrical terminal attachment portions 82, the male terminals 83 are individually accommodated while being electrically insulated from each other. The terminal attachment portions 82 are arranged alternately in two rows so that a line segment obtained by connecting the respective centers of openings of the terminal attachment portions is a polygonal line. The openings 87 are arranged to form the Olympic symbol. At a fore-end of each of the terminal attachment portions 82, slits 89 are provided. Owing to the slits 89, the opening 87 is likely to be enlarged when the rubber grommet 85 is inserted therethrough. As a result, the placement of the rubber grommet 85 is facilitated.
摘要翻译：公端子83分别设置在形成在法兰单元7上的端子安装部82中。为端子安装部分82设置有母端子84和索环85.每个端子安装部分82中形成有密封唇部分86，每个索环85.在圆柱形端子附接部分82中，阳端子83彼此电绝缘地单独容纳。端子安装部82交替地配置成两列，使得通过连接端子安装部的各个开口的中心而获得的线段为折线。开口87布置成形成奥运标志。在每个端子附接部分82的前端设置狭缝89。由于狭缝89，当橡胶索环85插入其中时，开口87容易扩大。结果，橡胶垫圈85的放置方便。

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