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11. 发明授权

US07799597B2 Thin film transistor, method of manufacturing the same and flat panel display having the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法和具有薄膜晶体管的平板显示器
公开(公告)号：US07799597B2
公开(公告)日：2010-09-21
申请号：US11582973
申请日：2006-10-19
申请人： Taek Ahn , Min-Chul Suh , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jin-Seong Park
IPC分类号： H01L51/40
CPC分类号： H01L51/052 , B82Y10/00 , B82Y30/00 , H01L51/0004 , H01L51/0541 , H01L51/0545
摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.
摘要翻译：薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

12. 发明授权

US07687802B2 Organic thin film transistor and organic light emitting display device including the same 有权
标题翻译：有机薄膜晶体管和包括其的有机发光显示装置
公开(公告)号：US07687802B2
公开(公告)日：2010-03-30
申请号：US11646493
申请日：2006-12-28
申请人： Tae-Min Kang , Taek Ahn , Min-Chul Suh
发明人： Tae-Min Kang , Taek Ahn , Min-Chul Suh
IPC分类号： H01L51/10
CPC分类号： H01L51/0545 , H01L27/3274 , H01L51/052 , H01L51/0541 , H01L51/0558
摘要： An organic thin film transistor (OTFT) having a patterned organic semiconductor layer on top of an electrode wiring layer. In order to avoid damage to the underlying electrode wiring layer, the organic semiconductor layer is patterned so that none of the organic semiconductor layer is removed off the electrode wiring layer. The patterned organic semiconductor layer completely covers all of the underlying electrode wiring layer. The OTFT includes a gate electrode, source and drain electrodes insulated from the gate electrode and an organic semiconductor layer which is insulated from the gate electrode and is in contact with the source and drain electrodes, wherein the organic semiconductor layer completely covers the source and drain electrodes. In addition, an organic light emitting display device includes more than one OTFT as well as an organic light-emitting element electrically connected to the electrical conductor.
摘要翻译：一种有机薄膜晶体管（OTFT），其在电极布线层的顶部具有图案化的有机半导体层。为了避免对底层电极布线层的损坏，图案化有机半导体层，使得没有有机半导体层从电极布线层去除。图案化的有机半导体层完全覆盖所有底层电极布线层。 OTFT包括栅电极，与栅电极绝缘的源电极和漏电极以及与栅电极绝缘并与源极和漏极接触的有机半导体层，其中有机半导体层完全覆盖源极和漏极电极。此外，有机发光显示装置包括多于一个OTFT以及电连接到电导体的有机发光元件。

13. 发明授权

US07645812B2 Thin film transistor and flat panel display including the same 有权
标题翻译：薄膜晶体管和平板显示器包括相同的
公开(公告)号：US07645812B2
公开(公告)日：2010-01-12
申请号：US11339657
申请日：2006-01-26
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo
IPC分类号： A61K6/083
CPC分类号： H01L51/0038 , H01L51/0094 , H01L51/0541
摘要： A poly(para-phenylenevinylene) (PPV) compound for forming a buffer layer of a thin film transistor represented by where R is a C1-C20 silyl group substituted with cyclohexyl or phenyl, m is an integer from 2 to 4, and n is an integer from 1 to 3,000; a composition for forming a buffer layer of a thin film transistor that is used to form the compound represented by formula 1 and includes a halo precursor polymer, a photobase generator, and a solvent; a thin film transistor including a buffer layer which is manufactured using the PPV compound; and a flat panel display including the thin film transistor. A patterned buffer layer can be formed under an organic semiconductor layer of an organic TFT by photolithography patterning using the silicon-containing PPV precursor. Accordingly, the alignment of the organic semiconductor layer of the organic TFT can be improved, and thereby, the characteristics of the organic TFT can be improved.
摘要翻译：用于形成薄膜晶体管缓冲层的聚（对亚苯基亚乙烯基）（PPV））化合物，其中R为被环己基或苯基取代的C 1 -C 20甲硅烷基，m为2至4的整数，n为 1到3000的整数; 用于形成薄膜晶体管的缓冲层的组合物，其用于形成由式1表示的化合物，并且包括卤素前体聚合物，光碱产生剂和溶剂; 包括使用所述PPV化合物制造的缓冲层的薄膜晶体管; 以及包括薄膜晶体管的平板显示器。可以通过使用含硅PPV前体的光刻图案在有机TFT的有机半导体层下形成图案化缓冲层。因此，可以提高有机TFT的有机半导体层的对准，从而可以提高有机TFT的特性。

14. 发明申请

US20070158648A1 Organic thin film transistor and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20070158648A1
公开(公告)日：2007-07-12
申请号：US11527894
申请日：2006-09-26
申请人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
发明人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L51/105
摘要： An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.
摘要翻译：公开了一种在源极和漏极之间具有改善的接触的有机TFT和有机半导体层，其制造方法以及具有有机TFT的有机发光显示装置。有机TFT包括基板，设置在基板上的栅极电极，覆盖栅极的栅极绝缘膜，设置在栅极绝缘膜上的源电极和漏电极，设置在栅极绝缘膜上的剥离层以接触源极和漏极的至少一部分端面，以及接触源极和漏极的有机半导体层。

15. 发明申请

US20070090362A1 Thin film transistor, method of manufacturing the same and flat panel display having the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法和具有薄膜晶体管的平板显示器
公开(公告)号：US20070090362A1
公开(公告)日：2007-04-26
申请号：US11582973
申请日：2006-10-19
申请人： Taek Ahn , Min-Chul Suh , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jin-Seong Park
IPC分类号： H01L29/76 , H01L21/84
CPC分类号： H01L51/052 , B82Y10/00 , B82Y30/00 , H01L51/0004 , H01L51/0541 , H01L51/0545
摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.
摘要翻译：薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

16. 发明申请

US20060169974A1 Thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor 审中-公开
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的平板显示装置
公开(公告)号：US20060169974A1
公开(公告)日：2006-08-03
申请号：US11338089
申请日：2006-01-24
申请人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
发明人： Taek Ahn , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L29/08
CPC分类号： H01L51/0545 , H01L27/3244 , H01L51/0541 , H01L51/0562
摘要： Provided are a thin film transistor, a method of manufacturing the same, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and a channel formation-promoting layer that contacts an opposite region of a channel region of the organic semiconductor layer, and contains a compound having a functional group, which fixes electric charges moving toward the opposite region of the channel region to the opposite region of the channel region. Thus, the thin film transistor has a low threshold voltage and excellent electric charge mobility.
摘要翻译：提供一种薄膜晶体管，其制造方法和包括该薄膜晶体管的平板显示装置。薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及沟道形成促进层，其与有机半导体层的沟道区域的相反区域接触，并且包含具有官能团的化合物，其将朝向沟道区域的相对区域移动的电荷固定到渠道区域。因此，薄膜晶体管具有低阈值电压和优异的电荷迁移率。

17. 发明授权

US08318533B2 Method of manufacturing an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US08318533B2
公开(公告)日：2012-11-27
申请号：US12662192
申请日：2010-04-05
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
IPC分类号： H01L51/40 , H01L21/00 , H01L21/44
CPC分类号： B82Y30/00 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0078 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
摘要翻译：具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。还提供了使用有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层和源电极或有机半导体层和漏电极。

18. 发明申请

US20100197085A1 Method of manufacturing an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20100197085A1
公开(公告)日：2010-08-05
申请号：US12662192
申请日：2010-04-05
申请人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
发明人： Taek Ahn , Min-Chul Suh , Jae-Bon Koo , Jin-Seong Park
IPC分类号： H01L51/40
CPC分类号： B82Y30/00 , H01L51/0036 , H01L51/0037 , H01L51/0052 , H01L51/0078 , H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.
摘要翻译：具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。还提供了使用有机薄膜晶体管的平板显示装置。有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层和源电极或有机半导体层和漏电极。

19. 发明授权

US07714324B2 Organic thin film transistor and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07714324B2
公开(公告)日：2010-05-11
申请号：US11527894
申请日：2006-09-26
申请人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
发明人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
IPC分类号： H01L51/10
CPC分类号： H01L51/0545 , H01L51/105
摘要： An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.
摘要翻译：公开了一种在源极和漏极之间具有改善的接触的有机TFT和有机半导体层，其制造方法以及具有有机TFT的有机发光显示装置。有机TFT包括基板，设置在基板上的栅极电极，覆盖栅极的栅极绝缘膜，设置在栅极绝缘膜上的源电极和漏电极，设置在栅极绝缘膜上的剥离层以接触源极和漏极的至少一部分端面，以及接触源极和漏极的有机半导体层。

20. 发明授权

US07692185B2 Organic thin film transistor, flat panel display apparatus comprising the same, and method of manufacturing the organic thin film transistor 失效
标题翻译：有机薄膜晶体管，包括该有机薄膜晶体管的平板显示装置以及制造该有机薄膜晶体管的方法
公开(公告)号：US07692185B2
公开(公告)日：2010-04-06
申请号：US11546342
申请日：2006-10-12
申请人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
发明人： Min-Chul Suh , Taek Ahn , Jin-Seong Park
IPC分类号： H01L51/00
CPC分类号： H01L51/0545 , B82Y10/00 , B82Y30/00 , H01L27/3274 , H01L51/0012 , H01L51/0541 , H01L51/105
摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.
摘要翻译：一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。

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