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11. 发明申请

US20100073084A1 SYSTEMS AND METHODS FOR A LEVEL-SHIFTING HIGH-EFFICIENCY LINC AMPLIFIER USING DYNAMIC POWER SUPPLY 审中-公开
标题翻译：使用动态电源的高效率LINC放大器的系统和方法
公开(公告)号：US20100073084A1
公开(公告)日：2010-03-25
申请号：US12563710
申请日：2009-09-21
申请人： Joonhoi Hur , Kwan-Woo Kim , Kyutae Lim , Chang-Ho Lee , Haksun Kim , Joy Laskar
发明人： Joonhoi Hur , Kwan-Woo Kim , Kyutae Lim , Chang-Ho Lee , Haksun Kim , Joy Laskar
IPC分类号： H03F3/68
CPC分类号： H03F1/0294 , H03F1/025 , H03F1/3241 , H03F3/191 , H03F3/24
摘要： Systems and methods may be provided for a LINC system having a level-shifting LINC amplifier. The systems and methods may include a dynamic power supply that is adjustable to provide at least a first voltage supply level and a second voltage supply level higher than the first voltage supply level; a first power amplifier that amplifies a first component signal to generate a first amplified signal; a second power amplifier that amplifiers a second component signal to generate a second amplified signal, where the first component signal and the second component signal are components of an original signal, where the first component signal and the second component signal each have a constant envelope, and where the original signal has a non-constant envelope, and where the first and second power amplifiers are biased at the first voltage supply level or the second voltage supply level based upon an analysis of an amplitude of the original signal.
摘要翻译：可以为具有电平移位LINC放大器的LINC系统提供系统和方法。系统和方法可以包括动态电源，其可调节以提供高于第一电压供应电平的至少第一电压供应电平和第二电压供应电平; 第一功率放大器，其放大第一分量信号以产生第一放大信号; 第二功率放大器，放大第二分量信号以产生第二放大信号，其中第一分量信号和第二分量信号是原始信号的分量，其中第一分量信号和第二分量信号各自具有恒定的包络线，并且其中原始信号具有非恒定包络，并且其中基于原始信号的幅度的分析，第一和第二功率放大器被偏置在第一电压供应电平或第二电压供应电平。

12. 发明授权

US08165535B2 Systems, methods and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using switched resonators 有权
标题翻译：使用开关谐振器的互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置
公开(公告)号：US08165535B2
公开(公告)日：2012-04-24
申请号：US11754103
申请日：2007-05-25
申请人： Minsik Ahn , Chang-Ho Lee , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
发明人： Minsik Ahn , Chang-Ho Lee , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
IPC分类号： H04B1/44
CPC分类号： H04B1/48
摘要： Systems and methods may be provided for a CMOS RF antenna switch. The systems and methods for the CMOS RF antenna switch may include an antenna that is operative to transmit and receive signals over at least one radio frequency (RF) band, and a transmit switch coupled to the antenna, where the transmit switch is enabled to transmit a respective first signal to the antenna and disabled to prevent transmission of the first signal to the antenna. the systems and methods for the CMOS RF antenna switch may further include a receiver switch coupled to the antenna, where the receiver switch forms a filter when enabled and a resonant circuit when disabled, where the filter provides for reception of a second signal received by the antenna, and where the resonant circuit blocks reception of at least the first signal.
摘要翻译：可以为CMOS RF天线开关提供系统和方法。 CMOS RF天线开关的系统和方法可以包括可操作以通过至少一个射频（RF）频带发送和接收信号的天线，以及耦合到天线的发射开关，其中发射开关能够传输对天线的相应的第一信号并且禁止阻止第一信号传输到天线。用于CMOS RF天线开关的系统和方法还可以包括耦合到天线的接收器开关，其中接收器开关在使能时形成滤波器，当禁用时形成谐振电路，其中滤波器提供接收由第天线，并且其中谐振电路阻止至少第一信号的接收。

13. 发明申请

US20100148866A1 Systems and Methods for Power Amplifiers with Voltage Boosting Multi-Primary Transformers 有权
标题翻译：具有电压提升多主变压器功率放大器的系统和方法
公开(公告)号：US20100148866A1
公开(公告)日：2010-06-17
申请号：US12711480
申请日：2010-02-24
申请人： Chang-Ho Lee , Kyu Hwan An , Ki Seok Yang , Jaejoon Chang , Wangmyong Woo , Younsuk Kim , Haksun Kim , Ockgoo Lee , Dong Ho Lee , Hyungwook Kim , Joy Laskar
发明人： Chang-Ho Lee , Kyu Hwan An , Ki Seok Yang , Jaejoon Chang , Wangmyong Woo , Younsuk Kim , Haksun Kim , Ockgoo Lee , Dong Ho Lee , Hyungwook Kim , Joy Laskar
IPC分类号： H03F1/00 , H01F41/06
CPC分类号： H03F3/211 , H01F2017/0046 , H03F1/3211 , H03F3/195 , H03F3/45183 , H03F3/45475 , H03F3/604 , H03F2200/451 , H03F2200/537 , H03F2200/541 , H03F2203/21139 , H03F2203/21157 , H03F2203/45704 , H03F2203/45706 , H03F2203/45731 , Y10T29/49071
摘要： Systems and methods may be provided for a power amplifier system. The systems and methods may include a plurality of power amplifiers, where each power amplifier includes at least one output port. The systems and methods may also include a plurality of primary windings each having a first number of turns, where each primary winding is connected to at least one output port of the plurality of power amplifiers, and a single secondary winding inductively coupled to the plurality of primary windings, where the secondary winding includes a second number of turns greater than the first number of turns.
摘要翻译：可以为功率放大器系统提供系统和方法。系统和方法可以包括多个功率放大器，其中每个功率放大器包括至少一个输出端口。系统和方法还可以包括多个初级绕组，每个初级绕组具有第一圈数，其中每个初级绕组连接到多个功率放大器的至少一个输出端口，以及感应耦合到多个初级绕组，其中次级绕组包括大于第一匝数的第二匝数。

14. 发明申请

US20080164941A1 Systems and methods for power amplifiers with voltage boosting multi-primary transformers 有权
标题翻译：具有升压型多原子变压器的功率放大器的系统和方法
公开(公告)号：US20080164941A1
公开(公告)日：2008-07-10
申请号：US11964646
申请日：2007-12-26
申请人： Chang-Ho Lee , Kyu Hwan An , Ki Seok Yang , Jaejoon Chang , Wangmyong Woo , Younsuk Kim , Haksun Kim , Ockgoo Lee , Dong Ho Lee , Hyungwook Kim , Joy Laskar
发明人： Chang-Ho Lee , Kyu Hwan An , Ki Seok Yang , Jaejoon Chang , Wangmyong Woo , Younsuk Kim , Haksun Kim , Ockgoo Lee , Dong Ho Lee , Hyungwook Kim , Joy Laskar
IPC分类号： H03F3/68 , H03F3/00
CPC分类号： H03F3/211 , H01F2017/0046 , H03F1/3211 , H03F3/195 , H03F3/45183 , H03F3/45475 , H03F3/604 , H03F2200/451 , H03F2200/537 , H03F2200/541 , H03F2203/21139 , H03F2203/21157 , H03F2203/45704 , H03F2203/45706 , H03F2203/45731 , Y10T29/49071
摘要： Systems and methods may be provided for a power amplifier system. The systems and methods may include a plurality of power amplifiers, where each power amplifier includes at least one output port. The systems and methods may also include a plurality of primary windings each having a first number of turns, where each primary winding is connected to at least one output port of the plurality of power amplifiers, and a single secondary winding inductively coupled to the plurality of primary windings, where the secondary winding includes a second number of turns greater than the first number of turns.
摘要翻译：可以为功率放大器系统提供系统和方法。系统和方法可以包括多个功率放大器，其中每个功率放大器包括至少一个输出端口。系统和方法还可以包括多个初级绕组，每个初级绕组具有第一圈数，其中每个初级绕组连接到多个功率放大器的至少一个输出端口，以及感应耦合到多个初级绕组，其中次级绕组包括大于第一匝数的第二匝数。

15. 发明申请

US20080129642A1 Systems, Methods, and Apparatuses for High Power Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching and Substrate Junction Diode Controlling in Multistacking Structure 有权
标题翻译：用于大功率互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置在多层结构中使用主体切换和基板结二极管控制
公开(公告)号：US20080129642A1
公开(公告)日：2008-06-05
申请号：US11943378
申请日：2007-11-20
申请人： Minsik Ahn , Chang-Ho Lee , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
发明人： Minsik Ahn , Chang-Ho Lee , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
IPC分类号： H01Q9/04
CPC分类号： H03K17/693 , H03K17/102 , H03K2217/0018 , H04B1/48
摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a −60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.
摘要翻译：本发明的实施例可以提供可被称为CMOS SPDT开关的CMOS天线开关。根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能约为900MHz 1.9GHz和2.1GHz。 CMOS天线开关可以包括接收器开关和发送开关。接收器开关可以利用具有主体基板切换以及源和体连接以及主体浮动技术的多堆叠晶体管，以通过防止器件在OFF状态下的通道形成以及保持低插入来阻止来自发射路径的高功率信号在接收机路径损失。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.9GHz和2.1GHz）处提供35dBm的P 1dB。此外，根据本发明的示例性实施例，可以获得高达28dBm的输入功率对于开关的-60dBc的二次和三次谐波。

16. 发明授权

US07843280B2 Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure 有权
标题翻译：在多层结构中使用体开关和衬底结二极管控制的大功率互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置
公开(公告)号：US07843280B2
公开(公告)日：2010-11-30
申请号：US11943378
申请日：2007-11-20
申请人： Minsik Ahn , Chang-Ho Lee , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
发明人： Minsik Ahn , Chang-Ho Lee , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
IPC分类号： H01P1/15 , H04B1/44
CPC分类号： H03K17/693 , H03K17/102 , H03K2217/0018 , H04B1/48
摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a −60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.
摘要翻译：本发明的实施例可以提供可被称为CMOS SPDT开关的CMOS天线开关。根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能约为900MHz 1.9GHz和2.1GHz。 CMOS天线开关可以包括接收器开关和发送开关。接收器开关可以利用具有主体衬底切换和源和体连接以及身体浮动技术的多堆叠晶体管，以通过防止器件在OFF状态下的通道形成以及保持低插入来阻止来自发射路径的高功率信号在接收机路径损失。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.9GHz和2.1GHz）处提供35dBm的P 1dB。此外，根据本发明的示例性实施例，可以获得高达28dBm的输入功率对于开关的-60dBc的二次和三次谐波。

17. 发明申请

US20090184786A1 MULTI-SEGMENT PRIMARY AND MULTI-TURN SECONDARY TRANSFORMER FOR POWER AMPLIFIER SYSTEMS 有权
公开(公告)号：US20090184786A1
公开(公告)日：2009-07-23
申请号：US12416268
申请日：2009-04-01
申请人： Chang-Ho Lee , Ockgoo Lee , Jeonghu Han , Kyu Hwan An , Hyungwook Kim , Dong Ho Lee , Ki Seok Yang , Haksun Kim , Joy Laskar
发明人： Chang-Ho Lee , Ockgoo Lee , Jeonghu Han , Kyu Hwan An , Hyungwook Kim , Dong Ho Lee , Ki Seok Yang , Haksun Kim , Joy Laskar
IPC分类号： H03J3/00 , H01F27/28 , H03F1/00 , H05K13/04
CPC分类号： H03F1/565 , H01F27/2804 , H03F3/195 , H03F3/211 , H03F3/45475 , H03F2200/387 , H03F2200/391 , H03F2200/399 , H03F2200/402 , H03F2200/451 , H03F2200/541 , H03F2203/45138 , Y10T29/5313
摘要： Embodiments of the invention may provide for power amplifier systems and methods. The systems and methods may include a power amplifier that generates a first differential output signal and a second differential output signal, a primary winding comprised of a plurality of primary segments, where a first end of each primary segment is connected to a first common input port and a second end of each primary segment is connected to a second common input port, where the first common input port is operative to receive the first differential output signal, and where the second common input port is operative to receive the second differential output signal, and a single secondary winding inductively coupled to the plurality of primary segments.

18. 发明申请

US20090174480A1 Systems and Methods for Cascode Switching Power Amplifiers 有权
标题翻译：串联开关功率放大器的系统和方法
公开(公告)号：US20090174480A1
公开(公告)日：2009-07-09
申请号：US11968852
申请日：2008-01-03
申请人： Ockgoo Lee , Jeonghu Han , Kyu Hwan An , Hyungwook Kim , Dong Ho Lee , Ki Seok Yang , Chang-Ho Lee , Haksun Kim , Joy Laskar
发明人： Ockgoo Lee , Jeonghu Han , Kyu Hwan An , Hyungwook Kim , Dong Ho Lee , Ki Seok Yang , Chang-Ho Lee , Haksun Kim , Joy Laskar
IPC分类号： H03F3/16 , H03F3/68 , H03F1/22
CPC分类号： H03F3/2176 , H03F1/223 , H03F1/565 , H03F3/193 , H03F2200/108 , H03F2200/387 , H03F2200/451 , H03F2200/541
摘要： Example embodiments of the invention may provide systems and methods for a power amplifier. The systems and methods may include a first common-source device having a first source, a first gate, a first drain, and a first body, where the first source is connected to the first body, and wherein the first gate is connected to an input port. The systems and methods may further include a second common-gate device having a second source, a second gate, a second drain, and a second body, where the second source is connected to the first drain, where the second source is further connected to the second body, and where the second drain is connected to an output port.
摘要翻译：本发明的示例性实施例可以提供功率放大器的系统和方法。系统和方法可以包括具有第一源，第一栅极，第一漏极和第一主体的第一共源器件，其中第一源极连接到第一主体，并且其中第一栅极连接到输入端口。系统和方法还可以包括具有第二源极，第二栅极，第二漏极和第二主体的第二共栅极器件，其中第二源极连接到第一漏极，其中第二源极连接到第二主体，第二排出口连接到输出端口。

19. 发明申请

US20080079653A1 Systems, Methods, and Apparatuses for Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching in Multistacking Structure 有权
标题翻译：使用多层结构中的主体切换的互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置
公开(公告)号：US20080079653A1
公开(公告)日：2008-04-03
申请号：US11857322
申请日：2007-09-18
申请人： Minsik Ahn , Chang-Ho Lee , Changhyuk Cho , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
发明人： Minsik Ahn , Chang-Ho Lee , Changhyuk Cho , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
IPC分类号： H03K17/687 , H01Q1/00
CPC分类号： H03K17/693 , H03K17/063 , H03K17/102 , H03K2217/0018 , H04B1/48
摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and −1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.
摘要翻译：本发明的实施例可以提供CMOS天线开关，其可以被称为CMOS SP4T开关。根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能大约在900MHz和1.9GHz。 CMOS天线开关可以包括接收器开关和发送开关。接收器开关可以利用具有主体衬底调谐的多层晶体管来阻挡来自发射路径的高功率信号以及在接收器路径处保持低的插入损耗。另一方面，在发送开关中，可以应用主体衬底调谐技术来保持对天线的高功率输送。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.8GHz）处提供31dBm的P 1 dB。此外，根据本发明的示例实施例，可以分别获得在900MHz和1.9GHz处的0.9dB和-1.1dB的插入损耗。

20. 发明授权

US07890063B2 Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure 有权
标题翻译：在多层结构中使用身体切换的互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置
公开(公告)号：US07890063B2
公开(公告)日：2011-02-15
申请号：US11857322
申请日：2007-09-18
申请人： Minsik Ahn , Chang-Ho Lee , Changhyuk Cho , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
发明人： Minsik Ahn , Chang-Ho Lee , Changhyuk Cho , Jaejoon Chang , Wangmyong Woo , Haksun Kim , Joy Laskar
IPC分类号： H04B1/44
CPC分类号： H03K17/693 , H03K17/063 , H03K17/102 , H03K2217/0018 , H04B1/48
摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and −1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.
摘要翻译：本发明的实施例可以提供CMOS天线开关，其可以被称为CMOS SP4T开关。根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能大约在900MHz和1.9GHz。 CMOS天线开关可以包括接收器开关和发送开关。接收器开关可以利用具有主体衬底调谐的多层晶体管来阻挡来自发射路径的高功率信号以及在接收器路径处保持低的插入损耗。另一方面，在发送开关中，可以应用主体衬底调谐技术来保持对天线的高功率输送。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.8GHz）处提供31dBm的P 1 dB。此外，根据本发明的示例实施例，可以分别获得在900MHz和1.9GHz处的0.9dB和-1.1dB的插入损耗。

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