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    • 11. 发明授权
    • Apparatus for converting optical information into electrical information
signal, information storage element and method for storing information
in the information storage element
    • 用于将光学信息转换成电信息信号的装置,用于将信息存储在信息存储元件中的信息存储元件和方法
    • US5351209A
    • 1994-09-27
    • US776643
    • 1991-10-15
    • Yutaka HayashiIwao HamaguchiShunsuke Fujita
    • Yutaka HayashiIwao HamaguchiShunsuke Fujita
    • H01L27/146G11C13/04
    • H01L27/14643
    • An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays. The electrical information signal is read out from the photoelectric conversion elements provided in the first photoelectric conversion structure when the sweep light is projected onto the photoelectric conversion elements provided in the second photoelectric conversion structure.
    • 用于将光学信息转换为电信息信号的装置包括以并行形式布置的多个一维转换阵列。 每一维转换阵列具有一体形成的第一和第二光电转换结构。 第一光电转换结构具有各自具有投影信息光的受光面的光电转换元件。 第二光电转换结构具有光电转换元件,每个光电转换元件具有投射有扫描光的扫掠光接收表面。 扫描光具有同时扫描包括在每个一维转换阵列中的一个光电转换元件的扫描光接收表面的横截面。 当扫描光投射到设置在第二光电转换结构中的光电转换元件上时,从设置在第一光电转换结构中的光电转换元件读出电信息信号。
    • 12. 发明授权
    • Gallium nitride crystal growth method, gallium nitride crystal substrate, epi-wafer manufacturing method, and epi-wafer
    • 氮化镓晶体生长方法,氮化镓晶体衬底,外延晶片制造方法和外延晶片
    • US08409350B2
    • 2013-04-02
    • US12179587
    • 2008-07-25
    • Shunsuke Fujita
    • Shunsuke Fujita
    • C30B21/02
    • C30B29/406C30B25/02
    • Affords gallium nitride crystal growth methods, gallium nitride crystal substrates, epi-wafers, and methods of manufacturing the epi-wafers, that make it possible to curb cracking that occurs during thickness reduction operations on the crystal, and to grow gallium nitride crystal having considerable thickness. A gallium nitride crystal growth method in one aspect of the present invention is a method of employing a carrier gas, a gallium nitride precursor, and a gas containing silicon as a dopant, and by hydride vapor phase epitaxy (HVPE) growing gallium nitride crystal onto an undersubstrate. The gallium nitride crystal growth method is characterized in that the carrier-gas dew point during the gallium nitride crystal growth is −60° C. or less.
    • 提供氮化镓晶体生长方法,氮化镓晶体衬底,外延晶片和制造外延晶片的方法,其可以抑制在晶体上的厚度减小操作期间发生的裂纹,并且生长具有相当大的氮化镓晶体 厚度。 本发明的一个方面的氮化镓晶体生长方法是使用载气,氮化镓前体和含硅作为掺杂剂的气体,以及通过氢化物气相外延(HVPE)生长氮化镓晶体的方法, 下衬底 氮化镓晶体生长方法的特征在于,氮化镓晶体生长期间的载气露点为-60℃以下。
    • 14. 发明授权
    • Apparatus for converting optical information into electrical information
signal, information storage element and method for storing information
in the information storage element
    • 用于将光学信息转换成电信息信号的装置,用于将信息存储在信息存储元件中的信息存储元件和方法
    • US5079415A
    • 1992-01-07
    • US503046
    • 1990-04-02
    • Yutaka HayashiHiroyoshi FunatoIwao HamaguchiShunsuke Fujita
    • Yutaka HayashiHiroyoshi FunatoIwao HamaguchiShunsuke Fujita
    • H01L27/146
    • H01L27/14643
    • An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays. The electrical information signal is read out from the photoelectric conversion elements provided in the first photoelectric conversion structure when the sweep light is projected onto the photoelectric conversion elements provided in the second photoelectric conversion structure.
    • 用于将光学信息转换为电信息信号的装置包括以并行形式布置的多个一维转换阵列。 每一维转换阵列具有一体形成的第一和第二光电转换结构。 第一光电转换结构具有各自具有投影信息光的受光面的光电转换元件。 第二光电转换结构具有光电转换元件,每个光电转换元件具有投射有扫描光的扫掠光接收表面。 扫描光具有同时扫描包括在每个一维转换阵列中的一个光电转换元件的扫描光接收表面的横截面。 当扫描光投射到设置在第二光电转换结构中的光电转换元件上时,从设置在第一光电转换结构中的光电转换元件读出电信息信号。
    • 15. 发明授权
    • Method of forming modified layer and pattern
    • 形成改性层和图案的方法
    • US4900396A
    • 1990-02-13
    • US233585
    • 1988-08-18
    • Yutaka HayashiKenichi IshiiShunsuke Fujita
    • Yutaka HayashiKenichi IshiiShunsuke Fujita
    • H01L21/033H01L21/314H01L21/32
    • H01L21/033H01L21/3144H01L21/32
    • A two-dimensional pattern of a silicon oxide film is formed on a silicon surface of a substrate, thereby to form a material, the two-dimensional pattern being represented by the presence and absence and/or thickness variations of the silicon oxide film. The material is nitrided to form a modified layer on the surface of the material, the modified layer being thicker on the silicon oxide film and thinner on the silicon surface of the substrate or thicker on the thicker portion of the silicon oxide film and thinner on the thinner portion of the silicon oxide film. The thinner portion of the modified layer is removed while leaving the thicker portion of the modified layer, for thereby forming the modified layer on the silicon oxide film substantially in the same shape as the silicon oxide film. An oxidant diffusion prevention film is formed at least on a thicker portion of the oxide film which has a thicker portion and a thinner portion on a substrate, then a silicon film, a silicide film, or a multilayer film composed of silicon and silicide films is deposited on a surface of the substrate a mask layer is formed on the film or films. The silicon film, the silicide film, or the multilayer film is oxidized to pattern the same in a shape corresponding to the mask layer. A relatively thin silicon oxide film may be formed on the oxidant diffusion prevention film.
    • 在基板的硅表面上形成氧化硅膜的二维图案,从而形成材料,二维图案由氧化硅膜的存在和/或厚度变化来表示。 该材料被氮化以在材料的表面上形成改性层,改性层在氧化硅膜上更厚并且在衬底的硅表面上更薄,或者在氧化硅膜的较厚部分上更厚, 较薄的氧化硅膜部分。 除去改性层的较薄部分,同时留下改性层的较厚部分,由此在氧化硅膜上形成基本上与氧化硅膜相同形状的改性层。 至少在基板上具有较厚部分和较薄部分的氧化物膜的较厚部分上形成氧化物扩散防止膜,则硅膜,硅化物膜或由硅和硅化物膜构成的多层膜为 沉积在衬底的表面上,在膜或膜上形成掩模层。 硅膜,硅化物膜或多层膜被氧化成与掩模层相对应的形状。 可以在氧化剂扩散防止膜上形成相对薄的氧化硅膜。
    • 16. 发明授权
    • Waveguide type optical detection apparatus
    • 波导型光学检测装置
    • US5091982A
    • 1992-02-25
    • US550569
    • 1990-07-10
    • Kiyoshi YokomoriShunsuke FujitaShigeyoshi Misawa
    • Kiyoshi YokomoriShunsuke FujitaShigeyoshi Misawa
    • G02B6/12G02B6/42G11B7/12G11B7/13
    • G02B6/12004G02B6/42G11B7/1245G11B7/13
    • A waveguide type optical detection apparatus which is provided on an optical integrated circuit that has a waveguide for transmitting a light from point to point through the waveguide, one or more sets of two adjacent photodetectors provided on the waveguide, and one or more light-insensitive areas existing between the two adjacent photodetectors of each set. The waveguide type optical detection apparatus includes a waveguide focusing part and one or more reflection parts, the waveguide focusing part being provided on the waveguide for allowing a light beam passing through the waveguide to be focused on each of the two adjacent photodetectors of each set, and the reflection parts provided adjacent to each of the light-insensitive areas for reflecting each of light beams sent from the waveguide focusing means forward each of the two adjacent photodetectors of each set so that the light beams are received by the photodetectors. The waveguide type optical detection apparatus can be applied to a pickup for an optical disk and a photodetector array for an optical spectrum analyzer.
    • 一种波导型光学检测装置,其设置在光集成电路上,该光集成电路具有用于从点到点通过波导传输光的波导,设置在波导上的一组或多组相邻的两个光电检测器,以及一个或多个光不敏感 存在于每组的两个相邻光电检测器之间的区域。 波导型光检测装置包括波导聚焦部分和一个或多个反射部分,波导聚焦部分设置在波导上,用于允许通过波导的光束聚焦在每组的两个相邻光电检测器中的每一个上, 以及与每个不透光区域相邻设置的反射部分,用于将从波导聚焦装置发送的每个光束反射到每组的两个相邻光电检测器中的每一个,使得光束被光电检测器接收。 波导型光学检测装置可以应用于光盘的拾取器和用于光谱分析器的光电检测器阵列。
    • 19. 发明授权
    • Apparatus for converting optical information into electrical information
signal, information storage element and method for storing information
in the information storage element
    • 用于将光学信息转换成电信息信号的装置,用于将信息存储在信息存储元件中的信息存储元件和方法
    • US5235542A
    • 1993-08-10
    • US776642
    • 1991-10-15
    • Yutaka HayashiIwao HamaguchiShunsuke Fujita
    • Yutaka HayashiIwao HamaguchiShunsuke Fujita
    • H01L27/146
    • H01L27/14643
    • An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays. The electrical information signal is read out from the photoelectric conversion elements provided in the first photoelectric conversion structure when the sweep light is projected onto the photoelectric conversion elements provided in the second photoelectric conversion structure.
    • 用于将光学信息转换为电信息信号的装置包括以并行形式布置的多个一维转换阵列。 每一维转换阵列具有一体形成的第一和第二光电转换结构。 第一光电转换结构具有各自具有投影信息光的受光面的光电转换元件。 第二光电转换结构具有光电转换元件,每个光电转换元件具有投射有扫描光的扫掠光接收表面。 扫描光具有同时扫描包括在每个一维转换阵列中的一个光电转换元件的扫描光接收表面的横截面。 当扫描光投射到设置在第二光电转换结构中的光电转换元件上时,从设置在第一光电转换结构中的光电转换元件读出电信息信号。