专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20110031497A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110031497A1
公开(公告)日：2011-02-10
申请号：US12848397
申请日：2010-08-02
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Miyuki HOSOBA , Eriko NISHIDA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Miyuki HOSOBA , Eriko NISHIDA
IPC分类号： H01L27/12 , H01L21/84 , H01L29/786
CPC分类号： H01L29/45 , H01L27/1214 , H01L27/1225 , H01L27/124
摘要： One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.
摘要翻译：本发明的一个目的是增加半导体器件的开口率。像素部分和驱动电路设置在一个基板上。像素部中的第一薄膜晶体管（TFT）包括：在基板上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的氧化物半导体层; 氧化物半导体层上的源极和漏极电极层; 栅极绝缘层，氧化物半导体层，源极和漏极电极层上的与氧化物半导体层的一部分接触的保护绝缘层; 以及保护绝缘层上的像素电极层。像素部分具有透光性。此外，驱动电路中的第二TFT的源极和漏极电极层的材料与第一TFT的材料不同。

12. 发明申请

US20110008931A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110008931A1
公开(公告)日：2011-01-13
申请号：US12832329
申请日：2010-07-08
申请人： Shunpei YAMAZAKI , Miyuki HOSOBA , Kosei NODA , Hiroki OHARA , Toshinari SASAKI , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Miyuki HOSOBA , Kosei NODA , Hiroki OHARA , Toshinari SASAKI , Junichiro SAKATA
IPC分类号： H01L21/36
CPC分类号： H01L29/66969 , H01L21/477 , H01L27/1225 , H01L29/7869
摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.
摘要翻译：一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物进行半导体层（脱水或脱氢的热处理）。氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的杂质如氧化物半导体层和与氧化物半导体层接触的薄膜减少了

13. 发明申请

US20110006301A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20110006301A1
公开(公告)日：2011-01-13
申请号：US12832333
申请日：2010-07-08
申请人： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
发明人： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译：目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如水分的杂质（脱水或脱氢热处理）的热处理在形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质它们与氧化物半导体层接触。

14. 发明申请

US20120220078A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120220078A1
公开(公告)日：2012-08-30
申请号：US13467408
申请日：2012-05-09
申请人： Miyuki HOSOBA , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
发明人： Miyuki HOSOBA , Junichiro SAKATA , Hiroki OHARA , Shunpei YAMAZAKI
IPC分类号： H01L21/363
CPC分类号： H01L29/78696 , G02F1/133528 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/133302 , G02F2001/133531 , G02F2201/121 , G02F2201/123 , G09G3/3677 , G09G2310/0286 , G09G2310/08 , H01L21/02107 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02672 , H01L21/324 , H01L21/477 , H01L21/67115 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
摘要翻译：目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。

15. 发明申请

US20110031491A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110031491A1
公开(公告)日：2011-02-10
申请号：US12846603
申请日：2010-07-29
申请人： Shunpei YAMAZAKI , Miyuki HOSOBA , Junichiro SAKATA , Hideaki KUWABARA
发明人： Shunpei YAMAZAKI , Miyuki HOSOBA , Junichiro SAKATA , Hideaki KUWABARA
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/78606 , G02F1/1339 , G02F1/134336 , G02F1/1345 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/13606 , G02F2201/123 , G09G3/344 , G09G3/3677 , G09G2300/0426 , G09G2310/0286 , G09G2310/08 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L27/1274 , H01L27/3262 , H01L29/45 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/66969 , H01L29/786 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.
摘要翻译：目的在于提供一种半导体器件，其具有可以有效地减少布线之间的寄生电容的结构。在使用氧化物半导体层的底栅薄膜晶体管中，用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上方并与其形成接触，同时氧化物形成覆盖层叠氧化物半导体层的周边部（包括侧面）的绝缘层。此外，以与沟道保护层不重叠的方式形成源极电极层和漏极电极层。因此，提供了源极电极层和漏电极层上的绝缘层与氧化物半导体层接触的结构。

16. 发明申请

US20120319106A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20120319106A1
公开(公告)日：2012-12-20
申请号：US13596527
申请日：2012-08-28
申请人： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
发明人： Shunpei YAMAZAKI , Hiroki OHARA , Junichiro SAKATA , Toshinari SASAKI , Miyuki HOSOBA
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译：目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如湿度的杂质（脱水或脱氢热处理）的热处理在形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质它们与氧化物半导体层接触。

17. 发明申请

US20100102312A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE 有权
标题翻译：氧化物半导体，薄膜晶体管和显示器件
公开(公告)号：US20100102312A1
公开(公告)日：2010-04-29
申请号：US12581200
申请日：2009-10-19
申请人： Shunpei YAMAZAKI , Toshinari SASAKI , Miyuki HOSOBA , Shunichi ITO , Junichiro SAKATA
发明人： Shunpei YAMAZAKI , Toshinari SASAKI , Miyuki HOSOBA , Shunichi ITO , Junichiro SAKATA
IPC分类号： H01L29/786 , H01L29/12 , H01L33/00
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/45 , H01L29/78618
摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.
摘要翻译：目的是控制氧化物半导体的组成和缺陷。另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数）小于50），还含有氢。在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。此外，氧化物半导体具有非晶结构。这里，n优选为大于或等于50，更优选小于10的非整数。

18. 发明申请

US20120138922A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20120138922A1
公开(公告)日：2012-06-07
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

19. 发明申请

US20110204362A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110204362A1
公开(公告)日：2011-08-25
申请号：US13026518
申请日：2011-02-14
申请人： Kengo AKIMOTO , Ryosuke WATANABE , Masashi TSUBUKU , Shunpei YAMAZAKI
发明人： Kengo AKIMOTO , Ryosuke WATANABE , Masashi TSUBUKU , Shunpei YAMAZAKI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/66969 , H01L29/78618
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, in which miniaturization of a transistor is achieved and the concentration of an electric field is relieved. The width of a gate electrode is reduced and a space between a source electrode layer and a drain electrode layer is shortened. By adding a rare gas in a self-alignment manner with the use of a gate electrode as a mask, a low-resistance region in contact with a channel formation region can be provided in an oxide semiconductor layer. Accordingly, even when the width of the gate electrode, that is, the line width of a gate wiring is small, the low-resistance region can be provided with high positional accuracy, so that miniaturization of a transistor can be realized.
摘要翻译：本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了晶体管的小型化和电场的集中。栅电极的宽度减小，源电极层和漏电极层之间的间隔缩短。通过使用栅电极作为掩模以自对准的方式添加稀有气体，可以在氧化物半导体层中提供与沟道形成区域接触的低电阻区域。因此，即使栅电极的宽度，即栅极配线的线宽小，也能够提供高电位区域的高位置精度，能够实现晶体管的小型化。

20. 发明申请

US20120061663A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120061663A1
公开(公告)日：2012-03-15
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei YAMAZAKI , Yusuke NONAKA , Takayuki INOUE , Masashi TSUBUKU , Kengo AKIMOTO , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Yusuke NONAKA , Takayuki INOUE , Masashi TSUBUKU , Kengo AKIMOTO , Akiharu MIYANAGA
IPC分类号： H01L29/12 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式