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11. 发明申请

US20130017266A1 Radiation Therapy Agent 有权
标题翻译：放射治疗剂
公开(公告)号：US20130017266A1
公开(公告)日：2013-01-17
申请号：US13578836
申请日：2011-02-17
申请人： Chiaki Ogino , Tsutomu Tanaka , Ryohei Sasaki , Akihiko Kondo
发明人： Chiaki Ogino , Tsutomu Tanaka , Ryohei Sasaki , Akihiko Kondo
IPC分类号： A61K9/14 , A61P35/00 , C07K16/18 , C07K16/00 , A61K39/395 , B82Y5/00
CPC分类号： A61K9/0019 , A61K33/40 , A61K41/0057 , A61K47/6835 , A61K2039/505 , A61N5/10 , A61N2005/1098 , C07K16/2863 , Y10T428/2982
摘要： Provided is a radiotherapeutic agent, including a composite particle, which is obtained by binding a molecule that specifically recognizes a target to a substrate particle including titanium peroxide, and which generates reactive oxygen through irradiation with a radiation. Further, because the radiotherapeutic agent contains the molecule that specifically recognizes a target, the radiotherapeutic agent has a function of accumulating in the target. The radiotherapeutic agent is capable of enhancing effects of radiotherapy, and is capable of reducing side effects on a living body to efficiently attack the target.
摘要翻译：本发明提供一种放射治疗剂，包括复合颗粒，其通过将特异性识别靶标的分子与包含过氧化钛的底物颗粒结合而获得，并且通过辐射照射产生活性氧。此外，由于放射治疗剂含有特异性识别靶标的分子，所以放射治疗剂具有累积在靶内的功能。放射治疗剂能够增强放射疗法的作用，并且能够减少对活体的副作用以有效地攻击靶。

12. 发明申请

US20120299070A1 PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERTER 有权
标题翻译：光电转换元件和光电转换器
公开(公告)号：US20120299070A1
公开(公告)日：2012-11-29
申请号：US13474061
申请日：2012-05-17
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
IPC分类号： H01L31/0232 , H01L27/144 , H01L27/146
CPC分类号： H01L31/105 , H01L27/14663 , H01L31/02164
摘要： Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.
摘要翻译：本文公开了一种光电转换元件，包括：设置在基板上方的第一导电类型的第一半导体层; 设置在比所述第一半导体层更高层的第二导电类型的第二半导体层; 第三导电类型的第三半导体层，设置在第一和第二半导体层之间，并且导电率低于第一和第二半导体层; 以及设置在所述基板和所述第一半导体层之间的遮光层。

13. 发明申请

US20120248318A1 RADIOGRAPHIC IMAGE-PICKUP DEVICE AND RADIOGRAPHIC IMAGE-PICKUP DISPLAY SYSTEM 审中-公开
标题翻译：放射成像图像拾取装置和放射影像图像显示系统
公开(公告)号：US20120248318A1
公开(公告)日：2012-10-04
申请号：US13424739
申请日：2012-03-20
申请人： Ryoichi Ito , Tsutomu Tanaka , Yasuhiro Yamada
发明人： Ryoichi Ito , Tsutomu Tanaka , Yasuhiro Yamada
IPC分类号： G01T1/20
CPC分类号： G01T1/24 , G01T1/244
摘要： A radiographic image-pickup device includes: a photoelectric conversion layer; a wavelength conversion layer provided on the photoelectric conversion layer and converting a wavelength of radiation into a wavelength within a sensitivity band of the photoelectric conversion layer; and a low-refractive-index layer provided between the photoelectric conversion layer and the wavelength conversion layer, and having a refractive index lower than a refractive index of each of the photoelectric conversion layer and the wavelength conversion layer.
摘要翻译：放射线照相图像拾取装置包括：光电转换层; 设置在光电转换层上并将辐射波长转换成光电转换层的灵敏度带内的波长的波长转换层; 以及设置在所述光电转换层和所述波长转换层之间并且具有低于所述光电转换层和所述波长转换层的折射率的折射率的低折射率层。

14. 发明授权

US08252577B2 Microorganism that displays biotin on cell surface 有权
标题翻译：在细胞表面显示生物素的微生物
公开(公告)号：US08252577B2
公开(公告)日：2012-08-28
申请号：US12431102
申请日：2009-04-28
申请人： Akihiko Kondo , Hideki Fukuda , Tsutomu Tanaka , Hideo Noda
发明人： Akihiko Kondo , Hideki Fukuda , Tsutomu Tanaka , Hideo Noda
IPC分类号： C12N1/20 , C12N1/00 , C12N9/10 , C12Q1/00 , C12Q1/48 , G01N33/567 , G01N33/53 , C12P21/06 , C12P21/04
CPC分类号： C12N15/1037 , C12N9/93
摘要： Provided is a microorganism that can display, on the cell surface, any molecules other than a molecule comprising amino acids, more specifically, a microorganism that displays biotin on a cell surface. The microorganism is capable of co-expressing a biotinylating enzyme and an acceptor peptide having a sequence recognized by the biotinylating enzyme, wherein the acceptor peptide is expressed on the cell surface, so that lysine of the acceptor peptide is biotinylated to display biotin on the cell surface. Also provided is a method for displaying an intended molecule, including not only a molecule comprising amino acids but also any molecules, on a cell surface of a microorganism.
摘要翻译：本发明提供能够在细胞表面上显示除氨基酸分子以外的任何分子，更具体地，在细胞表面上显示生物素的微生物的微生物。微生物能够共表达生物素化酶和具有生物素化酶识别的序列的受体肽，其中受体肽在细胞表面上表达，使得受体肽的赖氨酸被生物素化以在细胞上显示生物素表面。还提供了在微生物的细胞表面上显示预期分子的方法，不仅包括包含氨基酸的分子，而且包括任何分子。

15. 发明授权

US08152353B2 Surface emission apparatus, light guide, and method of manufacturing light guide 有权
标题翻译：表面发射装置，导光体及制造光导的方法
公开(公告)号：US08152353B2
公开(公告)日：2012-04-10
申请号：US12323045
申请日：2008-11-25
申请人： Ying Bao Yang , Masaru Higuchi , Tsutomu Tanaka , Kazunori Yamaguchi , Masumitsu Ino
发明人： Ying Bao Yang , Masaru Higuchi , Tsutomu Tanaka , Kazunori Yamaguchi , Masumitsu Ino
IPC分类号： F21V7/04 , F21V9/16
CPC分类号： G02B6/0043 , G02B6/0036 , G02B6/0068
摘要： A surface emission apparatus includes a first light source for emitting invisible light rays; a second light source for emitting visible light rays; a light guide having a light entrance surface for entering therethrough into the light guide the invisible light rays emitted from the first light source and the visible light rays emitted from the second light source, and a light exit surface for emitting the invisible light rays and the visible light rays therethrough out of the light guide; and a plurality of optical devices disposed on a surface of the light guide which confronts the light exit surface, for scattering more of the invisible light rays than the visible light rays.
摘要翻译：表面发射装置包括用于发射不可见光线的第一光源; 用于发射可见光的第二光源; 导光体，其具有用于从其导入从第一光源发射的不可见光和从第二光源发射的可见光的光入射面，以及用于发射不可见光的光出射面和从光导中穿过的可见光线; 以及多个光学装置，其设置在与导光板相对的表面上，用于散射比可见光更多的不可见光。

16. 发明申请

US20120038018A1 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：光电转换元件及其制造方法
公开(公告)号：US20120038018A1
公开(公告)日：2012-02-16
申请号：US13196096
申请日：2011-08-02
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/0352 , H01L27/14607 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.
摘要翻译：光电转换元件包括呈现第一导电类型并且设置在衬底上的选择区域中的第一半导体层，呈现第二导电类型并且与第一半导体层相对设置的第二半导体层，以及第三半导体层层，其设置在第一和第二半导体层之间并且表现出基本上本征的导电类型。第三半导体层具有与第一半导体层不接触的至少一个角部。

17. 发明授权

US08115188B2 Memory element and display device 有权
标题翻译：存储元件和显示设备
公开(公告)号：US08115188B2
公开(公告)日：2012-02-14
申请号：US12320307
申请日：2009-01-23
申请人： Dharam Pal Gosain , Makoto Takatoku , Yoshiharu Nakajima , Tsutomu Tanaka
发明人： Dharam Pal Gosain , Makoto Takatoku , Yoshiharu Nakajima , Tsutomu Tanaka
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： H01L27/12 , G02F1/1362 , G09G3/3648 , G09G2300/088 , G09G2330/021 , H01L27/1214 , H01L27/24
摘要： Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.
摘要翻译：这里公开了一种存储元件，包括薄膜晶体管的并联组合; 以及电阻变化元件，所述薄膜晶体管包括分别形成有沟道区域和位于所述沟道区域两侧的输入端子和输出端子的半导体薄膜，并且与所述沟道重叠的栅极电极区域，通过绝缘膜成为控制端子，电阻变化元件包括连接到薄膜晶体管的输入端侧的一个导电层，连接到薄膜晶体管的输出端侧的另一导电层，至少一个氧化物膜层设置在一个导电层和另一个导电层之间。

18. 发明申请

US20110204246A1 RADIATION IMAGE PICKUP APPARATUS AND METHOD OF DRIVING THE SAME 有权
标题翻译：辐射图像拾取装置及其驱动方法
公开(公告)号：US20110204246A1
公开(公告)日：2011-08-25
申请号：US13027328
申请日：2011-02-15
申请人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
发明人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
IPC分类号： G01T1/24 , H01L29/04 , H01L27/146
CPC分类号： H01L27/14676 , G01T1/2018 , H04N5/2251 , H04N5/374 , H04N5/378
摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.
摘要翻译：允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动通过像素晶体管，从而恢复像素晶体管的特性。

19. 发明申请

US20110122526A1 MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM, AND INFORMATION STORAGE DEVICE 审中-公开
标题翻译：磁记录介质，磁记录介质和信息存储设备的制造方法
公开(公告)号：US20110122526A1
公开(公告)日：2011-05-26
申请号：US13002738
申请日：2009-07-16
申请人： Kenji Sato , Tsutomu Tanaka , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
发明人： Kenji Sato , Tsutomu Tanaka , Tsutomu Nishihashi , Tadashi Morita , Kazuhiro Watanabe
IPC分类号： G11B5/706 , G11B21/02 , B32B38/10
CPC分类号： G11B5/855 , B82Y25/00 , H01F1/009 , H01F10/3295
摘要： A manufacturing method of a magnetic recording medium includes: forming a magnetic film having an artificial lattice structure by laminating plural types of atomic layers alternately on a substrate; and separating dots, which forms a dot separation band by implanting an ion, to reduce saturation magnetization locally, into portions of the magnetic film other than plural portions of the magnetic film. Each of the plural portions is made into a magnetic dot in which information is to be magnetically recorded. The saturation magnetization of the dot separation band is smaller than that of the magnetic dot.
摘要翻译：磁记录介质的制造方法包括：通过在基板上交替层叠多种类型的原子层来形成具有人造晶格结构的磁性膜; 以及分离点，其通过注入离子形成点分离带，以局部地将饱和磁化降低到除磁性膜的多个部分之外的部分磁性膜。将多个部分中的每一个制成磁信号记录在磁点上。点分离带的饱和磁化强度小于磁点的饱和磁化强度。

20. 发明授权

US07915648B2 Light-receiving element and display device 有权
标题翻译：光接收元件和显示装置
公开(公告)号：US07915648B2
公开(公告)日：2011-03-29
申请号：US12331159
申请日：2008-12-09
申请人： Natsuki Otani , Tsutomu Tanaka , Masafumi Kunii , Masanobu Ikeda , Ryoichi Ito
发明人： Natsuki Otani , Tsutomu Tanaka , Masafumi Kunii , Masanobu Ikeda , Ryoichi Ito
IPC分类号： H01L27/148
CPC分类号： H01L31/153 , G02F2201/58 , H01L27/14632 , H01L31/112
摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.
摘要翻译：光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度和第二导电型半导体区域。光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。

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