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11. 发明申请

US20080147934A1 STORAGE SYSTEM FOR BACK-end COMMUNICATIONS WITH OTHER STORAGE SYSTEM 失效
标题翻译：与其他存储系统进行后端通信的存储系统
公开(公告)号：US20080147934A1
公开(公告)日：2008-06-19
申请号：US11613400
申请日：2006-12-20
申请人： Yusuke Nonaka , Akira Nishimoto , Azuma Kano
发明人： Yusuke Nonaka , Akira Nishimoto , Azuma Kano
IPC分类号： G06F13/12
CPC分类号： G06F3/0646 , G06F3/061 , G06F3/067
摘要： In a first and second storage system, first and second switching apparatuses are interposed between a first and second controller and a storage device. At least one of the first and second switching apparatuses comprises a shared memory. The constitution is such that the first and second controllers communicate with one another via this shared memory.
摘要翻译：在第一和第二存储系统中，第一和第二切换装置介于第一和第二控制器与存储装置之间。第一和第二切换装置中的至少一个包括共享存储器。该结构使得第一和第二控制器经由该共享存储器彼此通信。

12. 发明申请

US20080091972A1 Storage apparatus 有权
标题翻译：储存装置
公开(公告)号：US20080091972A1
公开(公告)日：2008-04-17
申请号：US11702495
申请日：2007-02-06
申请人： Koichi Tanaka , Keiichi Tezuka , Atsushi Ishikawa , Azuma Kano , Koji Arai , Yusuke Nonaka
发明人： Koichi Tanaka , Keiichi Tezuka , Atsushi Ishikawa , Azuma Kano , Koji Arai , Yusuke Nonaka
IPC分类号： G06F11/07
CPC分类号： G06F11/1662 , G06F11/008 , G06F11/2094
摘要： Proposed is a storage apparatus capable of alleviating the burden of maintenance work when a failure occurs in a part configuring the storage apparatus. This storage apparatus includes multiple disk drives and spare disk drives, and multiple controllers. When a failure occurs, this storage apparatus determines the operability status of the storage apparatus based on failure information. When operation can be continued, the storage apparatus continues to operate without performing any maintenance such as part replacement, and if operation cannot be continued, data is migrated to another storage apparatus.
摘要翻译：提出了一种存储装置，其能够在构成存储装置的部件发生故障时减轻维护工作的负担。该存储装置包括多个磁盘驱动器和备用磁盘驱动器以及多个控制器。当发生故障时，该存储装置基于故障信息来确定存储装置的可操作性状态。当可以继续操作时，存储装置继续操作，而不执行诸如部件更换的任何维护，并且如果不能继续操作，则将数据迁移到另一存储装置。

13. 发明申请

US20070102768A1 Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070102768A1
公开(公告)日：2007-05-10
申请号：US11641758
申请日：2006-12-20
申请人： Akihiro Shimizu , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
发明人： Akihiro Shimizu , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
IPC分类号： H01L29/94
CPC分类号： H01L29/7845 , H01L21/0217 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/823864 , H01L21/84 , H01L27/092 , H01L27/0922 , H01L29/665 , H01L29/6659 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.
摘要翻译：半导体器件包括n沟道导电型FET，其具有形成在半导体衬底的主表面上的第一区域中的沟道形成区域和形成在主表面的第二区域中的沟道形成区域的ap沟道导电型FET，第二区域与第一区域不同。 n沟道FET的栅电极的杂质浓度的杂质浓度大于p沟道FET的栅电极的杂质浓度，从而在沟道形成区域中的漏极电流的流动方向产生拉伸应力的n沟道FET。 n沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力大于p沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力。

14. 发明申请

US20060253672A1 Remote copy with worm guarantee 审中-公开
标题翻译：远程复制与蠕虫保证
公开(公告)号：US20060253672A1
公开(公告)日：2006-11-09
申请号：US11474359
申请日：2006-06-26
申请人： Yusuke Nonaka , Naoto Matsunami , Akira Nishimoto , Yoichi Mizuno
发明人： Yusuke Nonaka , Naoto Matsunami , Akira Nishimoto , Yoichi Mizuno
IPC分类号： G06F12/16
CPC分类号： G06F11/2069
摘要： In the case in which data in a storage system A is remotely copied to a storage system B, it is not taken into account whether the data of the remote copy is WORM data. In the case in which a setting is made such that data stored in a volume in the storage system A is copied to a volume in the storage system B, storage system A judges whether an attribute to the effect that data can be referred to and can be updated or to the effect that data can be referred to but cannot be updated is added to the volume in the storage system A. Then, if the volume is a volume to which the attribute to the effect that data can be referred to but cannot be updated is added, such attribute is added to the volume in the storage system B.
摘要翻译：在将存储系统A中的数据远程复制到存储系统B的情况下，不考虑远程副本的数据是否是WORM数据。在存储系统A中的存储在卷中的数据被复制到存储系统B中的卷的设置的情况下，存储系统A判断是否可以引用可以参考数据的属性，并且可以被更新或者可以将数据引用但不能被更新的效果添加到存储系统A中的卷。然后，如果卷是能够引用数据的属性的卷，但是不能被添加，这样的属性被添加到存储系统B中的卷。

15. 发明授权

US06538293B2 Semiconductor integrated circuit device and method of manufacturing the same 有权
公开(公告)号：US06538293B2
公开(公告)日：2003-03-25
申请号：US10142062
申请日：2002-05-10
申请人： Kazuhisa Suzuki , Toshiro Takahashi , Yasunobu Yanagisawa , Yusuke Nonaka
发明人： Kazuhisa Suzuki , Toshiro Takahashi , Yasunobu Yanagisawa , Yusuke Nonaka
IPC分类号： H01L31119
CPC分类号： H01L27/0629 , Y10S438/981
摘要： A capacitive element C1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1 has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power-supply voltage.

16. 发明授权

US08963250B2 Semiconductor device including a film for applying stress to a channel formation region to increase current flow 有权
标题翻译：半导体器件包括用于向沟道形成区域施加应力以增加电流的膜
公开(公告)号：US08963250B2
公开(公告)日：2015-02-24
申请号：US12251536
申请日：2008-10-15
申请人： Akihiro Shimizu , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
发明人： Akihiro Shimizu , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
IPC分类号： H01L27/092
CPC分类号： H01L29/7845 , H01L21/0217 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/823864 , H01L21/84 , H01L27/092 , H01L27/0922 , H01L29/665 , H01L29/6659 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.
摘要翻译：半导体器件包括n沟道导电型FET，其具有形成在半导体衬底的主表面上的第一区域中的沟道形成区域和形成在主表面的第二区域中的沟道形成区域的ap沟道导电型FET，第二区域与第一区域不同。 n沟道FET的栅电极的杂质浓度的杂质浓度大于p沟道FET的栅电极的杂质浓度，从而在沟道形成区域中的漏极电流的流动方向产生拉伸应力的n沟道FET。 n沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力大于p沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力。

17. 发明授权

US08871565B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08871565B2
公开(公告)日：2014-10-28
申请号：US13222513
申请日：2011-08-31
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
IPC分类号： H01L21/44 , H01L29/786
CPC分类号： H01L29/78606 , H01L23/552 , H01L23/564 , H01L29/04 , H01L29/66969 , H01L29/7869 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.
摘要翻译：本发明的目的是制造具有稳定的电特性和高可靠性的氧化物半导体膜的半导体装置。通过利用包含在氧化物半导体靶中的多种原子的原子量的差异，形成结晶氧化物半导体膜，而不进行多个步骤，优选将低原子量的锌沉积在氧化物绝缘膜上形成包含锌的晶种; 并且具有高原子量的锡，铟等沉积在晶种上同时引起晶体生长。此外，通过使用具有包含锌作为核的六方晶系结构的晶种进行晶体生长来形成结晶氧化物半导体膜，从而形成单晶氧化物半导体膜或大致单晶氧化物半导体膜。

18. 发明授权

US08539150B2 Storage system and management method of control information using a cache memory with multiple cache partitions 有权
标题翻译：使用具有多个高速缓存分区的高速缓冲存储器的控制信息的存储系统和管理方法
公开(公告)号：US08539150B2
公开(公告)日：2013-09-17
申请号：US13054467
申请日：2010-12-27
申请人： Akihiko Araki , Yusuke Nonaka
发明人： Akihiko Araki , Yusuke Nonaka
IPC分类号： G06F12/00
CPC分类号： G06F12/0871 , G06F12/0246 , G06F12/0873 , G06F12/121 , G06F2212/1021 , G06F2212/222 , G06F2212/262 , G06F2212/282 , G06F2212/466 , G06F2212/7208
摘要： An embodiment of this invention divides a cache memory of a storage system into a plurality of partitions and information in one or more of the partitions is composed of data different from user data and including control information. The storage system dynamically swaps data between an LU storing control information and a cache partition. Through this configuration, in a storage system having an upper limit in the capacity of the cache memory, a large amount of control information can be used while access performance to control information is kept.
摘要翻译：本发明的一个实施例将存储系统的高速缓冲存储器划分为多个分区，并且一个或多个分区中的信息由与用户数据不同的数据组成并且包括控制信息。存储系统在LU存储控制信息和高速缓存分区之间动态地交换数据。通过这种配置，在具有高速缓冲存储器的容量上限的存储系统中，可以使用大量的控制信息，同时保持对控制信息的访问性能。

19. 发明授权

US08473704B2 Storage device and method of controlling storage system 失效
标题翻译：存储设备及控制存储系统的方法
公开(公告)号：US08473704B2
公开(公告)日：2013-06-25
申请号：US12742262
申请日：2010-04-28
申请人： Akihiko Araki , Yusuke Nonaka
发明人： Akihiko Araki , Yusuke Nonaka
IPC分类号： G06F12/02 , G06F13/18
CPC分类号： G06F3/061 , G06F3/0652 , G06F3/0653 , G06F3/0671
摘要： With respect to a storage system in which quick formatting and sequential formatting can be run concurrently, the time it takes to process an access request from a host is prevented from becoming prolonged even when a normal sequential formatting process is executed with respect to a storage volume which frequently incurs I/O penalties. The storage device measures the load from the host per configurational unit (storage medium) of LUs, and divides the LUs into a group of LUs whose load per storage medium is low, and a group of LUs whose load per storage medium is high. Further, the density per unit of LU capacity of I/O penalties incurred in a storage volume for which quick formatting is being executed is calculated. Sequential formatting is then executed, with priority, with respect to the LUs belonging to the group with low loads and in order of descending density of incurred I/O penalties.
摘要翻译：对于可以同时运行快速格式化和顺序格式化的存储系统，即使当相对于存储卷执行正常的顺序格式化处理时，也可以防止处理来自主机的访问请求所花费的时间延长这经常导致I / O处罚。存储装置测量来自主机的每个配置单元（存储介质）的负载，并将LU分为一组存储介质负荷低的一组LU，以及一组存储介质负载高的LU组。此外，计算在执行快速格式化的存储卷中产生的I / O惩罚单位LU容量的密度。然后，对于属于低负载组的逻辑单元并按照发生的I / O处罚密度下降的顺序，优先执行顺序格式化。

20. 发明申请

US20120191903A1 STORAGE APPARATUS AND METHOD OF MANAGING DATA STORAGE AREA 有权
标题翻译：存储设备和数据存储区域的管理方法
公开(公告)号：US20120191903A1
公开(公告)日：2012-07-26
申请号：US13361430
申请日：2012-01-30
申请人： Akihiko ARAKI , Yoshiki Kano , Sadahiro Sugimoto , Yusuke Nonaka
发明人： Akihiko ARAKI , Yoshiki Kano , Sadahiro Sugimoto , Yusuke Nonaka
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7202 , G06F2212/7211 , G11C2211/5641
摘要： To extend endurance and reduce bit cost, a storage apparatus includes a controller and a first storage device and a second storage device having a smaller erase count upper limit than the first storage device. Area conversion information includes correspondence of a first address of a data storage destination and a second address of a data storage area The controller selects an area corresponding to the first address, determines whether a rewrite frequency of the selected area is equal to or larger than a first threshold and, when the rewrite frequency is equal to or larger than the threshold, selects an area of the first storage device, and, when the rewrite frequency is smaller than the threshold, selects an area of the second storage device and maps the address of the selected area to the first address.
摘要翻译：为了延长耐久性并降低位成本，存储装置包括控制器和具有比第一存储装置更小的擦除次数上限的第一存储装置和第二存储装置。区域转换信息包括数据存储目的地的第一地址和数据存储区域的第二地址的对应关系。控制器选择对应于第一地址的区域，确定所选区域的重写频率是否等于或大于第一阈值，并且当重写频率等于或大于阈值时，选择第一存储装置的区域，并且当重写频率小于阈值时，选择第二存储装置的区域并映射地址的所选区域到第一个地址。

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