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11. 发明授权

US6070552A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US6070552A
公开(公告)日：2000-06-06
申请号：US022880
申请日：1998-02-12
申请人： Shigeru Mizuno , Masahito Ishihara , Yoichiro Numasawa , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Masahito Ishihara , Yoichiro Numasawa , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/509 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/4412 , C23C16/455 , C23C16/45519 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32834 , H01J37/32862
摘要： A substrate processing device includes a reactor equipped with a substrate holder and a gas feed electrode facing the substrate holder, a pump mechanism for pumping out an interior of the reactor, a reaction gas feed mechanism for introducing a reaction gas through the gas feed electrode into the interior of said reactor, a high frequency power source for applying a high frequency power to said gas feed electrode, a connecting port formed in a sidewall of said reactor, the pump mechanism is connected to the connecting port formed in the sidewall of the reactor, and a space between the gas feed electrode and the substrate holder is set so that a conductance between the gas feed electrode and the substrate holder is lower than a conductance between the sidewall of the reactor and the gas feed electrode.
摘要翻译：基板处理装置包括装备有基板保持器和面向基板保持器的气体供给电极的反应器，用于泵出反应器内部的泵机构，用于将反应气体通过气体供给电极引入的反应气体供给机构所述反应器的内部，用于向所述气体供给电极施加高频电力的高频电源，形成在所述反应器的侧壁中的连接端口，所述泵机构连接到形成在所述反应器的侧壁中的连接端口并且设置气体供给电极和衬底保持器之间的空间，使得气体供给电极和衬底保持器之间的电导低于反应器的侧壁和气体馈送电极之间的电导。

12. 发明授权

US5494494A Integrated module multi-chamber CVD processing system and its method for processing substrates 失效
公开(公告)号：US5494494A
公开(公告)日：1996-02-27
申请号：US280117
申请日：1994-07-25
申请人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , B21F41/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45521 , C23C16/4585 , C23C16/54 , Y10S414/135 , Y10S438/908
摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.

13. 发明授权

US5534072A Integrated module multi-chamber CVD processing system and its method for processing subtrates 失效
标题翻译：集成模块多室CVD处理系统及其处理方法
公开(公告)号：US5534072A
公开(公告)日：1996-07-09
申请号：US77687
申请日：1993-06-16
申请人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45521 , C23C16/4585 , C23C16/54 , Y10S414/135 , Y10S438/908
摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.
摘要翻译：在用于沉积覆盖钨膜的CVD处理系统中，当衬底夹具与衬底分离时，形成不同的阴影，而不会发生任何微剥离，以防止任何覆盖的钨沉积在SiO 2上，从而减少细尘粒子。一种用于沉积覆盖钨膜的CVD处理系统，包括基座（4）; 环形卡盘（9），用于将基板（3）的周边部分固定在基座上; 用于供应反应性气体的反应气体供应机构（17,18和19）以及用于排出未反应气体等的排气机构（2），其中：所述环卡盘具有与所述基板的周边部分接触的至少三点接触构件（10）点接触构件设置在环卡盘的内周的外侧的位置; 在环卡盘和基板之间的点接触构件处形成间隙（11）; 并且提供吹扫气体供给机构（20和21）以吹扫通过间隙的吹扫气体，以防止反应性气体进入间隙（11）。将间隙尺寸与吹扫气体的流量的比率设定为最佳值，以满足薄膜的周边部分的位置与环的内周的位置一致的条件卡盘

14. 发明授权

US5505779A Integrated module multi-chamber CVD processing system and its method for processing substrates 失效
标题翻译：集成模块多室CVD处理系统及其处理基板的方法
公开(公告)号：US5505779A
公开(公告)日：1996-04-09
申请号：US280118
申请日：1994-07-25
申请人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45521 , C23C16/4585 , C23C16/54 , Y10S414/135 , Y10S438/908
摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.
摘要翻译：在用于沉积覆盖钨膜的CVD处理系统中，当衬底夹具与衬底分离时，形成不同的阴影，而不会发生任何微剥离，以防止任何覆盖的钨沉积在SiO 2上，从而减少细尘粒子。一种用于沉积覆盖钨膜的CVD处理系统，包括基座（4）; 环形卡盘（9），用于将基板（3）的周边部分固定在基座上; 用于供应反应性气体的反应气体供应机构（17,18和19）以及用于排出未反应气体等的排气机构（2），其中：所述环卡盘具有与所述基板的周边部分接触的至少三点接触构件（10）点接触构件设置在环卡盘的内周的外侧的位置; 在环卡盘和基板之间的点接触构件处形成间隙（11）; 并且提供吹扫气体供给机构（20和21）以吹扫通过间隙的吹扫气体，以防止反应性气体进入间隙（11）。将间隙尺寸与吹扫气体的流量的比率设定为最佳值，以满足薄膜的周边部分的位置与环的内周的位置一致的条件卡盘

15. 发明授权

US10519000B2 Sheet processing apparatus and image forming system including multiple folding members 有权
公开(公告)号：US10519000B2
公开(公告)日：2019-12-31
申请号：US16116161
申请日：2018-08-29
申请人： Ken Sawada , Shigeru Mizuno , Hiroyuki Kuno , Takuya Fukuhara
发明人： Ken Sawada , Shigeru Mizuno , Hiroyuki Kuno , Takuya Fukuhara
IPC分类号： B65H45/14
摘要： A sheet processing apparatus that forms a folding line on a sheet includes first and second folding rollers that form a folding line on the sheet by rotating a bent sheet while pinching from sheet surfaces and a first pressing unit that presses the second folding roller against the first folding roller in an arbitrary portion in a rotating shaft direction of the second folding roller.

16. 发明授权

US08242019B2 Selective deposition of metal-containing cap layers for semiconductor devices 有权
标题翻译：用于半导体器件的含金属盖层的选择性沉积
公开(公告)号：US08242019B2
公开(公告)日：2012-08-14
申请号：US12414917
申请日：2009-03-31
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, Jr.
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Satohiko Hoshino , Hiroyuki Nagai , Yuki Chiba , Frank M. Cerio, Jr.
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/302
CPC分类号： H01L21/76849 , H01L21/02063 , H01L21/02074 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76846 , H01L21/76856 , H01L21/76859 , H01L21/76883
摘要： A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing metal surfaces and dielectric layer surfaces, and modifying the dielectric layer surfaces by exposure to a reactant gas containing a hydrophobic functional group, where the modifying substitutes a hydrophilic functional group in the dielectric layer surfaces with a hydrophobic functional group. The method further includes depositing metal-containing cap layers selectively on the metal surfaces by exposing the modified dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor.
摘要翻译：一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。在一个实施例中，该方法包括提供含有金属表面和电介质层表面的图案化衬底，以及通过暴露于含有疏水官能团的反应气体来修饰电介质层表面，其中修饰取代介电层表面中的亲水性官能团具有疏水官能团。该方法还包括通过将改性的介电层表面和金属表面暴露于含有金属的前体蒸气的沉积气体中，将金属含有的盖层选择性地沉积在金属表面上。

17. 发明授权

US08026168B2 Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming 有权
标题翻译：含有氮化钽碳氮化物阻挡膜的半导体器件及其形成方法
公开(公告)号：US08026168B2
公开(公告)日：2011-09-27
申请号：US11839410
申请日：2007-08-15
申请人： Tadahiro Ishizaka , Shigeru Mizuno
发明人： Tadahiro Ishizaka , Shigeru Mizuno
IPC分类号： H01L21/4763
CPC分类号： H01L23/53238 , C23C16/36 , H01L21/28562 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.
摘要翻译：该方法包括提供含有具有凹陷特征的介电层的基板，并在凹陷特征的表面上形成铝钽碳氮化物阻挡膜。通过沉积多个碳氮化钽膜并在多个碳氮化钽薄膜中的每一个之间沉积铝来形成氮化钽碳氮化物阻挡膜。一个实施例还包括在氮化钽碳氮化物阻挡膜上沉积Ru膜，在Ru膜上沉积Cu籽晶层，并用体积Cu填充凹陷特征。描述了包含氮化钽碳氮化物阻挡膜的半导体器件。

18. 发明授权

US07718527B2 Method for forming cobalt tungsten cap layers 有权
标题翻译：形成钴钨帽层的方法
公开(公告)号：US07718527B2
公开(公告)日：2010-05-18
申请号：US12242914
申请日：2008-10-01
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76856 , H01L21/02063 , H01L21/02074 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt tungsten cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt tungsten cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k regions, and forming a cobalt tungsten cap layer on the Cu paths.
摘要翻译：提供了一种用于将钴钨帽层集成到半导体器件制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化基底和位于特征底部的第一金属化层，在第一金属化层上形成钴钨帽层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一实施例包括提供具有Cu路径和低k区域的基本上平坦的表面的图案化衬底，以及在Cu路径上形成钴钨帽层。

19. 发明申请

US20100081276A1 METHOD FOR FORMING COBALT TUNGSTEN CAP LAYERS 有权
标题翻译：形成钴铁矿石层的方法
公开(公告)号：US20100081276A1
公开(公告)日：2010-04-01
申请号：US12242914
申请日：2008-10-01
申请人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
发明人： Tadahiro Ishizaka , Shigeru Mizuno , Miho Jomen
IPC分类号： H01L21/768
CPC分类号： H01L21/76856 , H01L21/02063 , H01L21/02074 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method is provided for integrating cobalt tungsten cap layers into manufacturing of semiconductor devices to improve electromigration and stress migration in copper (Cu) metal. One embodiment includes providing a patterned substrate containing a recessed feature formed in a low-k material and a first metallization layer at the bottom of the feature, forming a cobalt tungsten cap layer on the first metallization layer, depositing a barrier layer in the recessed feature, including on the low-k dielectric material and on the first cobalt metal cap layer, and filling the recessed feature with Cu metal. Another embodiment includes providing a patterned substrate having a substantially planar surface with Cu paths and low-k regions, and forming a cobalt tungsten cap layer on the Cu paths.
摘要翻译：提供了一种用于将钴钨帽层集成到半导体器件制造中以改善铜（Cu）金属中的电迁移和应力迁移的方法。一个实施例包括提供包含形成在低k材料中的凹陷特征的图案化基底和位于特征底部的第一金属化层，在第一金属化层上形成钴钨帽层，在凹陷特征中沉积阻挡层包括在低k电介质材料和第一钴金属帽层上，并用Cu金属填充凹陷特征。另一实施例包括提供具有Cu路径和低k区域的基本上平坦的表面的图案化衬底，以及在Cu路径上形成钴钨帽层。

20. 发明申请

US20090191721A1 SEQUENTIAL TANTALUM-NITRIDE DEPOSITION 失效
标题翻译：顺序硝酸盐沉积
公开(公告)号：US20090191721A1
公开(公告)日：2009-07-30
申请号：US12018813
申请日：2008-01-24
申请人： Frank M. Cerio, JR. , Shigeru Mizuno , Tsukasa Matsuda , Adam Selsey
发明人： Frank M. Cerio, JR. , Shigeru Mizuno , Tsukasa Matsuda , Adam Selsey
IPC分类号： H01L21/31
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/32 , C23C14/541 , H01L21/2855 , H01L21/76846 , H01L21/76865
摘要： An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.
摘要翻译： iPVD系统被编程为在真空室内使用多步骤的方法将均匀的材料（例如阻挡材料）沉积在半导体衬底上的高纵横比纳米尺寸特征中，这增强了与场和底部覆盖（s ）同时最小化或消除突出。

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