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11. 发明授权

US07041523B2 Method of fabricating nitride semiconductor device 有权
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US07041523B2
公开(公告)日：2006-05-09
申请号：US10815847
申请日：2004-04-02
申请人： Toshiyuki Kawakami , Yukio Yamasaki , Shigetoshi Ito , Susumu Omi
发明人： Toshiyuki Kawakami , Yukio Yamasaki , Shigetoshi Ito , Susumu Omi
IPC分类号： H01L21/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/1082 , H01S5/22 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are formed one along each of stripe-shaped waveguides 253 formed parallel to the direction of the wafer, and are formed in the shape of broken lines in the direction of the wafer.
摘要翻译：在具有形成在GaN基基板250上的LD结构251的晶片中，通过用金刚石针从LD结构251的上方划线而在其表面上形成解理引导槽252。解理引导槽252沿着平行于晶片的<1-100>方向形成的条形波导253形成一个，并且在晶片的<11-20>方向上形成为虚线的形状。

12. 发明授权

US08170076B2 GaN laser element 有权
标题翻译： GaN激光元件
公开(公告)号：US08170076B2
公开(公告)日：2012-05-01
申请号：US12982231
申请日：2010-12-30
申请人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito
发明人： Toshiyuki Kawakami , Tomoki Ono , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/10 , H01S5/32341 , H01S2301/176
摘要： In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.
摘要翻译：在具有包括发光层的GaN基半导体层叠结构的GaN基激光器件中，半导体层叠结构包括引起条状波导的脊条结构，并且具有彼此相对的侧表面，在其宽度方向夹着条形波导。处理至少一个侧表面的至少一部分以防止条形波导在宽度方向上作为法布里 - 珀罗共振器起作用。

13. 发明授权

US07579627B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07579627B2
公开(公告)日：2009-08-25
申请号：US11435932
申请日：2006-05-18
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L31/12
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

14. 发明授权

US07515621B2 Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US07515621B2
公开(公告)日：2009-04-07
申请号：US11702625
申请日：2007-02-06
申请人： Shigetoshi Ito , Yuhzoh Tsuda , Yoshihiro Ueta
发明人： Shigetoshi Ito , Yuhzoh Tsuda , Yoshihiro Ueta
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/2231 , H01S5/34333
摘要： A nitride semiconductor laser element includes a lower clad layer, a lower adjacent layer, a quantum well active layer, an upper adjacent layer and an upper clad layer in this order. The quantum well active layer includes a plurality of well layers formed of undoped InGaN, and an undoped barrier layer sandwiched between the well layers. The barrier layer includes a first layer formed of InGaN, a second layer formed of GaN, and a third layer formed of InGaN. The In composition ratio of the first layer and the In composition ratio of the third layer are less than half the In composition ratio of the well layer.
摘要翻译：氮化物半导体激光元件依次包括下包层，下相邻层，量子阱有源层，上相邻层和上覆层。量子阱活性层包括由未掺杂的InGaN形成的多个阱层和夹在阱层之间的未掺杂势垒层。阻挡层包括由InGaN形成的第一层，由GaN形成的第二层和由InGaN形成的第三层。第一层的In组成比和第三层的In组成比小于阱层的In组成比的一半。

15. 发明申请

US20080304528A1 Nitride semiconductor laser device and fabrication method thereof 审中-公开
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US20080304528A1
公开(公告)日：2008-12-11
申请号：US12155332
申请日：2008-06-03
申请人： Shuichiro Yamamoto , Shigetoshi Ito , Fumio Yamashita , Toshiyuki Kawakami
发明人： Shuichiro Yamamoto , Shigetoshi Ito , Fumio Yamashita , Toshiyuki Kawakami
IPC分类号： H01S5/026 , H01L21/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S2301/173
摘要： In a nitride semiconductor laser device so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (11-20) plane as the principal plane, the resonator end surface is perpendicular to the principal plane, and, in the cleavage surface forming the resonator end surface, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.
摘要翻译：在氮化物半导体激光装置中，为了抑制氮化物半导体层上的台阶的发展，基板具有（11-20）面作为主面，共振器端面垂直于主面，在形成谐振器端面的解理面至少由条状波导的一侧形成为朝向氮化物半导体层的表面开口的蚀刻区域的蚀刻部分。

16. 发明申请

US20080283866A1 Nitride semiconductor light-emitting device and method for producing same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080283866A1
公开(公告)日：2008-11-20
申请号：US12216533
申请日：2008-07-07
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L33/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.
摘要翻译：在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以相对于基板的表面为53.5°〜63.4°。在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

17. 发明授权

US07410819B2 Nitride semiconductor light-emitting device and method for producing same 有权
公开(公告)号：US07410819B2
公开(公告)日：2008-08-12
申请号：US11296532
申请日：2005-12-08
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L21/20
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

18. 发明申请

US20050157769A1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US20050157769A1
公开(公告)日：2005-07-21
申请号：US11038123
申请日：2005-01-21
申请人： Shigetoshi Ito , Daisuke Hanaoka
发明人： Shigetoshi Ito , Daisuke Hanaoka
IPC分类号： H01S5/022 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： H01S5/32341 , H01L2224/48091 , H01L2224/48247 , H01S5/0021 , H01S5/02212 , H01S5/02484 , H01S5/2231 , H01L2924/00014
摘要： Provided is a semiconductor laser device that is free from or suffers less from deterioration resulting from a surge or that is less likely to suffer from deterioration resulting from a surge. The semiconductor laser device has a conductive stem 101, a submount 102 fixed to the stem 101, a nitride semiconductor laser chip 103 mounted on the submount 102, pins 104 and 105 fixed to the stem 101 but insulated therefrom, a wire connecting the pin 104 to a p-electrode of the nitride semiconductor laser chip 103, a wire connecting the pin 105 to an n-electrode of the nitride semiconductor laser chip 103, and a cap 106 enclosing the nitride semiconductor laser chip 103 and the submount 102 and fixed to the stem 101.
摘要翻译：提供一种半导体激光器件，其免于或遭受由于浪涌导致的劣化或不太可能遭受由于浪涌引起的劣化的半导体激光器件。半导体激光器件具有导电杆101，固定到杆101的底座102，安装在基座102上的氮化物半导体激光器芯片103，固定到杆101但与之绝缘的销104和105，连接销104 涉及氮化物半导体激光器芯片103的p电极，将引脚105连接到氮化物半导体激光器芯片103的n电极的引线以及封装氮化物半导体激光器芯片103和基座102的盖106，并固定到杆101。

19. 发明授权

US06881981B2 Nitride semiconductor light emitting device chip 失效
标题翻译：氮化物半导体发光器件芯片
公开(公告)号：US06881981B2
公开(公告)日：2005-04-19
申请号：US10250617
申请日：2001-12-27
申请人： Yuhzoh Tsuda , Shigetoshi Ito
发明人： Yuhzoh Tsuda , Shigetoshi Ito
IPC分类号： H01L33/00 , H01L33/14 , H01L33/32 , H01S5/323 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/0075 , H01L33/145 , H01S5/32341 , H01S5/34333
摘要： In a nitride semiconductor light emitting device chip, a mask pattern on a nitride semiconductor substrate (101) is formed of a growth inhibiting film on which a nitride semiconductor layer is hard to grow. There are a plurality of windows unprovided with the growth inhibiting film. There are at least two different widths as mask widths each between the adjacent windows. The mask pattern includes a mask A group (MAG) and mask B groups (MBG) arranged on respective sides of the mask A group. A mask A width in the mask A group is wider than a mask B width in the mask B group. The nitride semiconductor light emitting device chip further includes a nitride semiconductor underlayer (102) covering the windows and the mask pattern, and a light emitting device structure having a light emitting layer (106) including at least one quantum well layer between an n type layer (103-105) and a p type layer (107-110) over the underlayer. A current-constricting portion (RS) through which substantial current is introduced into the light emitting layer is formed above mask A.
摘要翻译：在氮化物半导体发光器件芯片中，氮化物半导体衬底（101）上的掩模图案由氮化物半导体层难以生长的生长抑制膜形成。没有提供生长抑制膜的多个窗口。至少两个不同的宽度作为每个相邻窗口之间的掩模宽度。掩模图案包括布置在掩模A组的相应侧上的掩模A组（MAG）和掩模B组（MBG）。掩模掩模A组中的宽度比掩模B组中的掩码B宽度宽。氮化物半导体发光器件芯片还包括覆盖窗口和掩模图案的氮化物半导体底层（102）和发光器件结构，其具有发光层（106），发光层（106）包括在n型层之间的至少一个量子阱层（103-105）和ap型层（107-110）。在掩模A上方形成有通过其将大量电流引入发光层的电流限制部分（RS）。

20. 发明申请

US20050042787A1 Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体装置及其制造方法以及半导体光学装置
公开(公告)号：US20050042787A1
公开(公告)日：2005-02-24
申请号：US10493137
申请日：2002-10-28
申请人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
发明人： Shigetoshi Ito , Takayuki Yuasa , Yoshihiro Ueta , Mototaka Taneya , Zenpei Tani , Kensaku Motoki
IPC分类号： H01L21/20 , H01S5/02 , H01S5/323 , H01L21/00
CPC分类号： H01S5/2018 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/2231 , H01S5/3013 , H01S5/3202 , H01S5/32341 , H01S2301/173
摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.
摘要翻译：一种氮化物半导体激光器件，其具有内部晶体缺陷的减小和应力的缓解，以及包括该氮化物半导体激光器件的半导体光学装置。首先，在配置有显示高密度晶体缺陷和低位错区域的位错集中区域的交替条纹的n型GaN衬底的表面上形成抗GaN晶体生长的生长抑制膜，从而涂覆位错浓缩区域。接下来，通过GaN晶体的外延生长，用生长抑制膜涂覆的n型GaN衬底与氮化物半导体层重叠。此外，除去生长抑制膜以将激光波导区域和最接近的位错集中区域之间的横向距离调整为40μm以上。

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