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11. 发明授权

US06469320B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06469320B2
公开(公告)日：2002-10-22
申请号：US09864275
申请日：2001-05-25
申请人： Tetsuhiro Tanabe , Masayuki Sonobe
发明人： Tetsuhiro Tanabe , Masayuki Sonobe
IPC分类号： H01L2715
CPC分类号： H01L21/02395 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part (15) is so laminated as to form a light emitting layer. Recessed parts (3b) are formed in the upper face side of the mask layer. In other words, owing to the recessed parts in the upper face side of the mask layer, the second GaN type compound semiconductor layer (4) is grown as to form approximately parallel gap (3c) between the bottom face of the second GaN type compound semiconductor layer and the mask layer. Further, it is preferable for the mask to be formed in a manner that the opening parts for exposing the seeds are not arranged only continuous in one single direction in the entire surface of the wafer type substrate. Consequently, a nitride type compound semiconductor light emitting device can be obtained while being provided with a low dislocation density and excellent light emitting efficiency and especially a semiconductor laser with a lowered threshold current value can be obtained.
摘要翻译：在基板（1）上形成第一GaN层（2），在其上形成具有开口部（3a）的掩模层（3），从第二GaN层（4）的开口部掩模层和氮化物型化合物半导体层叠部分（15）进一步层叠以形成发光层。凹陷部分（3b）形成在掩模层的上表面侧。换句话说，由于掩模层的上表面侧的凹部，第二GaN型化合物半导体层（4）生长成在第二GaN型化合物的底面之间形成大致平行的间隙（3c）半导体层和掩模层。此外，优选的是，掩模形成为使得种子露出的开口部分在晶片型基板的整个表面上不能沿单一方向连续布置。因此，可以获得具有低位错密度和优异的发光效率的氮化物型化合物半导体发光器件，并且特别是可以获得具有降低的阈值电流值的半导体激光器。

12. 发明授权

US06426967B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06426967B1
公开(公告)日：2002-07-30
申请号：US09344648
申请日：1999-06-25
申请人： Tetsuhiro Tanabe
发明人： Tetsuhiro Tanabe
IPC分类号： H01S522
CPC分类号： H01S5/2231
摘要： A semiconductor laser device includes a substrate formed of GaAs. A lower electrode is formed on an underside of this substrate. The substrate has, on its top surface, a lower cladding layer, an active layer, a first upper cladding layer, an etch stop layer, a current restricting layer, a second contact layer and an upper electrode formed in this order. A second upper cladding layer is formed widthwise centrally of the current restricting layer. A first contact layer and an insulation film are formed on the second upper cladding layer. This insulation film blocks a current from flowing from the upper electrode to an end of an optical waveguide. Accordingly, a current non-injection region is provided at an end of the active layer or optical waveguide.
摘要翻译：半导体激光器件包括由GaAs形成的衬底。在该基板的下侧形成下电极。基板在其顶表面上具有以下顺序形成的下包层，有源层，第一上覆层，蚀刻停止层，电流限制层，第二接触层和上电极。第二上包层形成在电流限制层的中心的宽度方向。第一接触层和绝缘膜形成在第二上包层上。该绝缘膜阻止电流从上电极流到光波导的端部。因此，在有源层或光波导的端部设置有电流的非注入区域。

13. 发明授权

US07965753B2 Monolithic semiconductor laser 有权
标题翻译：单片半导体激光器
公开(公告)号：US07965753B2
公开(公告)日：2011-06-21
申请号：US11990843
申请日：2006-08-23
申请人： Tetsuhiro Tanabe
发明人： Tetsuhiro Tanabe
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/323 , H01S5/40
摘要： An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.
摘要翻译：至少包括由例如第一导电型包覆层（2a），有源层（3a）和第二导电型包覆层（2a）构成的发光层形成部分（9a）的红外线元件（10a）形成在半导体衬底（1）上的红色光（4a）和至少包括由例如第一导电型包层（...）构成的发光层形成部分（9b）的红色元件（10b） 2b），有源层（3b）和用于发射红光的第二导电型包覆层（4b）形成在同一半导体衬底（1）上。它们的第二导电型包层（4a和4b）由相同的材料制成。结果，可以使其脊部的形成处理被共同化，并且可以通过具有能够高输出操作的窗口结构分别形成两个元件。

14. 发明申请

US20090034569A1 Monolithic semiconductor laser 有权
标题翻译：单片半导体激光器
公开(公告)号：US20090034569A1
公开(公告)日：2009-02-05
申请号：US11990859
申请日：2006-08-23
申请人： Tetsuhiro Tanabe
发明人： Tetsuhiro Tanabe
IPC分类号： H01S5/026 , H01S5/02
CPC分类号： H01S5/22 , H01S5/323 , H01S5/40
摘要： There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element (10a) and an InGaAlP based semiconductor laser element (10b) formed on a semiconductor substrate (1). The AlGaAs based semiconductor laser element (10a) is composed of an infrared light emitting layer forming portion (9a), which has an n-type cladding layer (2a), an active layer (3a) and a p-type cladding layer (4a) formed so as to have a ridge portion, and a current constriction layer (5a) provided on sides of the ridge portion, while the InGaP based semiconductor laser element (10b) is composed of a red light emitting layer forming portion (9a), which has an n-type cladding layer (2b), an active layer (3b) and a p-type cladding layer (4b) formed so as to have a ridge portion, and a current constriction layer (5b) provided on sides of the ridge portion. The current constriction layers of the both elements are made of the same material having a larger band gap than that of the active layer (3b) of the red light emitting layer forming portion. Consequently, there can be obtained a monolithic semiconductor laser capable of high temperature and high output operation without increasing the number of processes of the growth.
摘要翻译：公开了一种单片半导体激光器，其设置有形成在半导体衬底（1）上的基于AlGaAs的半导体激光元件（10a）和基于InGaAlP的半导体激光元件（10b）。基于AlGaAs的半导体激光元件（10a）由具有n型包覆层（2a），有源层（3a）和p型覆层（4a）的红外发光层形成部（9a））形成为具有脊部，以及设置在脊部的侧面的电流收缩层（5a），而InGaP基半导体激光元件（10b）由红色发光层形成部（9a）构成，其具有形成为具有脊部的n型包覆层（2b），有源层（3b）和p型覆盖层（4b），以及设置在该侧壁上的电流收缩层（5b）脊部。两个元件的电流收缩层由具有比红色发光层形成部分的有源层（3b）的带隙大的带隙的相同材料制成。因此，可以获得能够在不增加生长过程的情况下能够进行高温和高输出操作的单片半导体激光器。

15. 发明授权

US07711024B2 Monolithic semiconductor laser 有权
标题翻译：单片半导体激光器
公开(公告)号：US07711024B2
公开(公告)日：2010-05-04
申请号：US11990859
申请日：2006-08-23
申请人： Tetsuhiro Tanabe
发明人： Tetsuhiro Tanabe
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/323 , H01S5/40
摘要： There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element (10a) and an InGaAlP based semiconductor laser element (10b) formed on a semiconductor substrate (1). The AlGaAs based semiconductor laser element (10a) is composed of an infrared light emitting layer forming portion (9a), which has an n-type cladding layer (2a), an active layer (3a) and a p-type cladding layer (4a) formed so as to have a ridge portion, and a current constriction layer (5a) provided on sides of the ridge portion, while the InGaP based semiconductor laser element (10b) is composed of a red light emitting layer forming portion (9a), which has an n-type cladding layer (2b), an active layer (3b) and a p-type cladding layer (4b) formed so as to have a ridge portion, and a current constriction layer (5b) provided on sides of the ridge portion. The current constriction layers of the both elements are made of the same material having a larger band gap than that of the active layer (3b) of the red light emitting layer forming portion. Consequently, there can be obtained a monolithic semiconductor laser capable of high temperature and high output operation without increasing the number of processes of the growth.
摘要翻译：公开了一种单片半导体激光器，其设置有形成在半导体衬底（1）上的基于AlGaAs的半导体激光元件（10a）和基于InGaAlP的半导体激光元件（10b）。基于AlGaAs的半导体激光元件（10a）由具有n型包覆层（2a），有源层（3a）和p型覆层（4a）的红外发光层形成部（9a））形成为具有脊部，以及设置在脊部的侧面的电流收缩层（5a），而InGaP基半导体激光元件（10b）由红色发光层形成部（9a）构成，其具有形成为具有脊部的n型包覆层（2b），有源层（3b）和p型覆盖层（4b），以及设置在该侧壁上的电流收缩层（5b）脊部。两个元件的电流收缩层由具有比红色发光层形成部分的有源层（3b）的带隙大的带隙的相同材料制成。因此，可以获得能够在不增加生长过程的情况下能够进行高温和高输出操作的单片半导体激光器。

16. 发明申请

US20090086781A1 Monolithic semiconductor laser 有权
标题翻译：单片半导体激光器
公开(公告)号：US20090086781A1
公开(公告)日：2009-04-02
申请号：US11990843
申请日：2006-08-23
申请人： Tetsuhiro Tanabe
发明人： Tetsuhiro Tanabe
IPC分类号： H01S5/10
CPC分类号： H01S5/22 , H01S5/323 , H01S5/40
摘要： An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.
摘要翻译：至少包括由例如第一导电型包覆层（2a），有源层（3a）和第二导电型包覆层（2a）构成的发光层形成部分（9a）的红外线元件（10a）形成在半导体衬底（1）上的红色光（4a）和至少包括由例如第一导电型包层（...）构成的发光层形成部分（9b）的红色元件（10b） 2b），有源层（3b）和用于发射红光的第二导电型包覆层（4b）形成在同一半导体衬底（1）上。它们的第二导电型包层（4a和4b）由相同的材料制成。结果，可以使其脊部的形成处理被共同化，并且可以通过具有能够高输出操作的窗口结构分别形成两个元件。

17. 发明授权

US06680959B2 Semiconductor light emitting device and semiconductor laser 有权
标题翻译：半导体发光器件和半导体激光器
公开(公告)号：US06680959B2
公开(公告)日：2004-01-20
申请号：US09906698
申请日：2001-07-18
申请人： Tetsuhiro Tanabe , Norikazu Ito
发明人： Tetsuhiro Tanabe , Norikazu Ito
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/3202
摘要： When a laminated semiconductor portion of nitride based compound semiconductor is formed so as to constitute a portion forming a light emitting layer forming portion on a sapphire substrate, the sapphire substrate has an off orientation angle having a tilt relative to an A axis or a M axis in such a way that 0.2°≦&thgr;={&thgr;a2+&thgr;m2}1/2≦0.3°, wherein 0°≦&thgr;a≦0.3°, 0°≦&thgr;m≦0.3°, when taking the angle tilted relative to the A axis as &thgr;a and to the M axis as &thgr;m, and the foregoing nitride based compound semiconductor layers are laminated onto the surface of the off-oriented C plane. Therefore, it is possible to attain a semiconductor light emitting device having the superior characteristic of light emitting by growing the nitride based compound semiconductor on a sapphire substrate with the degree of flatness high and furthermore to attain a semiconductor laser of a small threshold current by forming a cleavage surface finely while improving the degree of flatness by off-orienting a sapphire substrate.
摘要翻译：当形成氮化物系化合物半导体的叠层半导体部分以形成蓝宝石衬底上形成发光层形成部分的部分时，蓝宝石衬底具有相对于A轴或M轴倾斜的偏离取向角度以这样的方式使得0.2°<θ> 2t + 2t2} 1/2 <= 0.3°，其中0°<= THETAa <= 0.3°，0°<= THETAm = 0.3°时，当将相对于A轴倾斜的角度取为θa，并将M轴作为立方体，并且将前述氮化物基化合物半导体层层压到脱离取向C平面的表面上时。因此，可以通过在蓝宝石衬底上生长氮化物基化合物半导体而获得具有优异的发光特性的半导体发光器件，其平坦度高，此外，通过形成具有小阈值电流的半导体激光器精细地切割表面，同时通过偏转蓝宝石衬底来改善平坦度。

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