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11. 发明申请

US20100110758A1 STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS 有权
公开(公告)号：US20100110758A1
公开(公告)日：2010-05-06
申请号：US12262262
申请日：2008-10-31
申请人： Shaoping Li , Inisk Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Inisk Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00 , H01L47/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

12. 发明授权

US07436632B2 Differential/dual CPP recording head 失效
标题翻译：差分/双CPP记录头
公开(公告)号：US07436632B2
公开(公告)日：2008-10-14
申请号：US10880879
申请日：2004-06-30
申请人： Shaoping Li , Song Xue , Kaizhong Gao , Patrick Ryan
发明人： Shaoping Li , Song Xue , Kaizhong Gao , Patrick Ryan
IPC分类号： G11B5/39
CPC分类号： G11B5/265 , G11B5/127 , G11B5/3954 , G11B5/3974
摘要： A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.
摘要翻译：一种用于从磁性介质读取信息的磁传感器。磁传感器包括底电极和设置在底电极上方的第一传感器。磁传感器还包括设置在第一传感器上方的中间电极，设置在中间电极上方的第二传感器和设置在第二传感器上方的顶部电极。底部电极，中间电极和顶部电极用于并联地电连接第一传感器和第二传感器。

13. 发明授权

US07359161B2 Magnetic sensor that combines both CPP and CIP modes of operation 有权
标题翻译：结合CPP和CIP操作模式的磁传感器
公开(公告)号：US07359161B2
公开(公告)日：2008-04-15
申请号：US10880705
申请日：2004-06-30
申请人： Shaoping Li , Song Xue , Kaizhong Gao , Michael R. Montemorra , Patrick Ryan
发明人： Shaoping Li , Song Xue , Kaizhong Gao , Michael R. Montemorra , Patrick Ryan
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , G11B2005/0005
摘要： A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are coupled to the magnetoresistive multi-layered portion. A sensing current flows from a first contact of the at least two contacts to a second contact of the at least two contacts via the first resistance region and the second resistance region of the magnetoresistive multi-layered portion. The first resistance region promotes a primary flow of the sensing current in a first direction substantially perpendicular to surface planes of the layers of the magnetoresistive multi-layered portion, and the second resistance region promotes the primary flow of the sensing current in a second direction substantially in parallel to surface planes of the layers of the magnetoresistive multi-layered portion.
摘要翻译：提供磁传感器。磁传感器包括具有第一电阻区域和第二电阻区域的磁阻多层部分。至少两个触点耦合到磁阻多层部分。感测电流从至少两个触点的第一触点经由第一电阻区域和磁阻多层部分的第二电阻区域流过至少两个触点的第二触点。所述第一阻抗区域促进所述感测电流在与所述磁阻多层部分的所述层的表面平行的第一方向上的主要流动，并且所述第二电阻区域基本上促进所述感测电流在第二方向上的初级流动平行于磁阻多层部分的层的表面平面。

14. 发明申请

US20060002034A1 Magnetic sensor that combines both CPP and CIP modes of operation 有权
标题翻译：结合CPP和CIP操作模式的磁传感器
公开(公告)号：US20060002034A1
公开(公告)日：2006-01-05
申请号：US10880705
申请日：2004-06-30
申请人： Shaoping Li , Song Xue , Kaizhong Gao , Michael Montemorra , Patrick Ryan
发明人： Shaoping Li , Song Xue , Kaizhong Gao , Michael Montemorra , Patrick Ryan
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , G11B2005/0005
摘要： A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are coupled to the magnetoresistive multi-layered portion. A sensing current flows from a first contact of the at least two contacts to a second contact of the at least two contacts via the first resistance region and the second resistance region of the magnetoresistive multi-layered portion. The first resistance region promotes a primary flow of the sensing current in a first direction substantially perpendicular to surface planes of the layers of the magnetoresistive multi-layered portion, and the second resistance region promotes the primary flow of the sensing current in a second direction substantially in parallel to surface planes of the layers of the magnetoresistive multi-layered portion.
摘要翻译：提供磁传感器。磁传感器包括具有第一电阻区域和第二电阻区域的磁阻多层部分。至少两个触点耦合到磁阻多层部分。感测电流从至少两个触点的第一触点经由第一电阻区域和磁阻多层部分的第二电阻区域流过至少两个触点的第二触点。所述第一阻抗区域促进所述感测电流在与所述磁阻多层部分的所述层的表面平行的第一方向上的主要流动，并且所述第二电阻区域基本上促进所述感测电流在第二方向上的初级流动平行于磁阻多层部分的层的表面平面。

15. 发明申请

US20100227202A1 BIT-PATTERNED MEDIA WITH ANTIFERROMAGNETIC SHELL 有权
标题翻译：具有抗病毒壳体的双向图形介质
公开(公告)号：US20100227202A1
公开(公告)日：2010-09-09
申请号：US12397457
申请日：2009-03-04
申请人： Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11B5/706 , G11B5/33 , B05D5/12 , B44C1/22
CPC分类号： G11B5/855 , B82Y10/00 , G11B5/743 , G11B5/746 , G11B5/82 , H01F10/002 , H01L21/02112 , H01L29/82 , Y10T428/115
摘要： A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.
摘要翻译：提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

16. 发明申请

US20070217084A1 Reset device for a biasing element in a magnetic sensor 有权
标题翻译：磁传感器中偏置元件的复位装置
公开(公告)号：US20070217084A1
公开(公告)日：2007-09-20
申请号：US11376014
申请日：2006-03-15
申请人： Song Xue , Paul Anderson , Kaizhong Gao , Kristin Duxstad
发明人： Song Xue , Paul Anderson , Kaizhong Gao , Kristin Duxstad
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3903 , G11B2005/0018
摘要： A device resets a biasing magnetization of a biasing element in a magnetic sensor. The device includes a magnetic structure that is magnetically coupled to the biasing element. A conductive element is disposed around at least a portion of the magnetic structure. When a current is passed through the conductive element, a magnetic field is produced that resets the biasing magnetization of the biasing element.
摘要翻译：器件复位磁传感器中的偏置元件的偏置磁化强度。该装置包括磁耦合到偏压元件的磁性结构。导电元件围绕磁性结构的至少一部分设置。当电流通过导电元件时，产生磁场，该磁场使偏置元件的偏置磁化复位。

17. 发明申请

US20060198047A1 Writer structure with assisted bias 有权
标题翻译：具有辅助偏见的作家结构
公开(公告)号：US20060198047A1
公开(公告)日：2006-09-07
申请号：US11069792
申请日：2005-03-01
申请人： Song Xue , Mark Kief , Johannes Ek , Nurul Amin , Olle Heinonen , Kaizhong Gao , Patrick Ryan
发明人： Song Xue , Mark Kief , Johannes Ek , Nurul Amin , Olle Heinonen , Kaizhong Gao , Patrick Ryan
IPC分类号： G11B5/147
CPC分类号： H01F10/3268 , B82Y25/00 , G11B5/265
摘要： The present invention relates to a recording head with a storage medium. The head includes an assist mechanism to assist operation of the head.
摘要翻译：本发明涉及具有存储介质的记录头。头部包括辅助机构以辅助头部的操作。

18. 发明申请

US20100034011A1 Multi-Terminal Resistance Device 有权
标题翻译：多端电阻器件
公开(公告)号：US20100034011A1
公开(公告)日：2010-02-11
申请号：US12412644
申请日：2009-03-27
申请人： Haiwen Xi , Kaizhong Gao , Song Xue
发明人： Haiwen Xi , Kaizhong Gao , Song Xue
IPC分类号： G11C11/00 , H01L43/02
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/76 , H01L45/04 , H01L45/1206 , H01L45/122 , H01L45/146 , H01L45/147
摘要： Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.
摘要翻译：本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。该设备可以包括共享的第四电极以提供额外的编程能力。在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

19. 发明授权

US08455117B2 Bit-patterned stack with antiferromagnetic shell 有权
标题翻译：带有反铁磁壳的位图案堆叠
公开(公告)号：US08455117B2
公开(公告)日：2013-06-04
申请号：US12397457
申请日：2009-03-04
申请人： Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： H01L29/82 , H01F10/32 , G11B5/74 , H01F10/00 , H01L21/02
CPC分类号： G11B5/855 , B82Y10/00 , G11B5/743 , G11B5/746 , G11B5/82 , H01F10/002 , H01L21/02112 , H01L29/82 , Y10T428/115
摘要： A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.
摘要翻译：提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

20. 发明授权

US08004874B2 Multi-terminal resistance device 有权
标题翻译：多端电阻设备
公开(公告)号：US08004874B2
公开(公告)日：2011-08-23
申请号：US12412644
申请日：2009-03-27
申请人： Haiwen Xi , Kaizhong Gao , Song Xue
发明人： Haiwen Xi , Kaizhong Gao , Song Xue
IPC分类号： G11C11/00 , G11C43/02
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/76 , H01L45/04 , H01L45/1206 , H01L45/122 , H01L45/146 , H01L45/147
摘要： Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.
摘要翻译：本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。该设备可以包括共享的第四电极以提供额外的编程能力。在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

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