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    • 14. 发明申请
    • PHOTORESIST COMPOSITION AND PATTERNING METHOD THEREOF
    • 光电组合物及其方法
    • US20100203444A1
    • 2010-08-12
    • US12376107
    • 2007-08-02
    • Shi-Jin SungSang-Haeng LeeSang-Tae Kim
    • Shi-Jin SungSang-Haeng LeeSang-Tae Kim
    • G03F7/20G03F7/004
    • G03F7/0236
    • Disclosed is a resist composition which has desirable physical properties such as sensitivity, resolution, residual film ratio and coating property, and forms a pattern having the desirable profile and depth of focus due to excellent light transmissivity during a semiconductor process and a flat panel display process using a short wavelength of 248 nm (KrF) or less, even though the resist composition is applied to a non-chemically amplified resist. The photoresist composition comprises a novolac-based resin A, a photosensitizer B, and a low molecular substance C having low absorbance. The low molecular substance having low absorbance has absorbance that is lower than absorbance of the novolac-based resin at one or more wavelengths of 248 nm, 193 nm, and 157 nm, and the photoresist composition is used at the wavelength of 248 nm or less.
    • 公开了具有理想的物理性质如光敏度,分辨率,残留膜比和涂布性能的抗蚀剂组合物,并且由于在半导体工艺和平板显示过程中由于优异的透光率而形成具有期望的轮廓和深度聚焦的图案 使用248nm(KrF)的短波长,即使将抗蚀剂组合物施加到非化学放大抗蚀剂上。 光致抗蚀剂组合物包含酚醛清漆基树脂A,光敏剂B和低吸光度的低分子物质C. 具有低吸光度的低分子物质的吸光度低于在248nm,193nm和157nm的一个或多个波长处的酚醛清漆基树脂的吸光度,并且光致抗蚀剂组合物在248nm或更小的波长下使用 。