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11. 发明授权

US07867900B2 Aluminum contact integration on cobalt silicide junction 失效
标题翻译：硅化钴接头上的铝接触集成
公开(公告)号：US07867900B2
公开(公告)日：2011-01-11
申请号：US12240816
申请日：2008-09-29
申请人： Wei Ti Lee , Mohd Fadzli Anwar Hassan , Ted Guo , Sang-Ho Yu
发明人： Wei Ti Lee , Mohd Fadzli Anwar Hassan , Ted Guo , Sang-Ho Yu
IPC分类号： H01L21/44
CPC分类号： H01L23/53214 , H01L21/02068 , H01L21/28518 , H01L21/76876 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.
摘要翻译：本文的实施方案提供了在钴硅化物结上形成铝接触的方法。在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜，将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分层，然后在另一RTA工艺期间加热衬底。

12. 发明申请

US20090087983A1 ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION 失效
标题翻译：铝接点集成在钴硅酮结上
公开(公告)号：US20090087983A1
公开(公告)日：2009-04-02
申请号：US12240816
申请日：2008-09-29
申请人： WEI TI LEE , Mohd Fadzli Anwar Hassan , Ted Guo , Sang-Ho Yu
发明人： WEI TI LEE , Mohd Fadzli Anwar Hassan , Ted Guo , Sang-Ho Yu
IPC分类号： H01L21/44
CPC分类号： H01L23/53214 , H01L21/02068 , H01L21/28518 , H01L21/76876 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.
摘要翻译：本文的实施方案提供了在钴硅化物结上形成铝接触的方法。在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜，将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分层，然后在另一RTA工艺期间加热衬底。

13. 发明申请

US20070045103A1 Aluminum sputtering while biasing wafer 失效
标题翻译：铝溅射同时偏置晶圆
公开(公告)号：US20070045103A1
公开(公告)日：2007-03-01
申请号：US11209328
申请日：2005-08-23
申请人： Wei Lee , Ted Guo , Sang-Ho Yu
发明人： Wei Lee , Ted Guo , Sang-Ho Yu
IPC分类号： C23C14/00
CPC分类号： C23C14/185 , C23C14/025 , C23C14/046 , C23C14/345
摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.
摘要翻译：一种铝溅射工艺，包括RF偏置晶片和两步铝填充工艺和装置，用于在两个明显不同的条件下，优选在两个不同的等离子体溅射反应器中通过溅射将铝填充到窄通孔中。第一步包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相当高的偏压以将铝原子吸引到窄孔中并蚀刻突出端。第二步包括在相对温暖的晶片上的更中性的溅射，例如保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。围绕铝靶的背面扫描的磁控管可能在第一步骤中相对较小并且不平衡，而在第二步中相对较大且平衡。

14. 发明授权

US09240139B2 Organic electroluminescent display device and method of driving the same 有权
标题翻译：有机电致发光显示装置及其驱动方法
公开(公告)号：US09240139B2
公开(公告)日：2016-01-19
申请号：US12591310
申请日：2009-11-16
申请人： Hak-Su Kim , Sang-Ho Yu , Won-Kyu Ha
发明人： Hak-Su Kim , Sang-Ho Yu , Won-Kyu Ha
IPC分类号： G09G5/00 , G09G3/30 , G09G3/32
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2310/0224 , G09G2310/0251 , G09G2320/0233 , G09G2320/0252 , G09G2320/043
摘要： An organic electroluminescent display device includes a plurality of pixels, each one of the plurality of pixels including: a switching transistor that is connected to a gate line and a data line; a driving transistor, wherein a data voltage of the data line passing through the switching transistor is reflected into a gate of the driving transistor; a sampling transistor that samples a threshold voltage of the driving transistor, wherein a gate of the sampling transistor is connected to a control line, and the sampled threshold voltage is reflected into the gate of the driving transistor; an initializing transistor, wherein a gate of the initializing transistor is connected to a previous or next gate line, and an initialization voltage passing through the initializing transistor is reflected into the gate of the driving transistor; and an organic light emitting diode that is connected to the driving transistor, wherein a driving current of the organic light emitting diode is adjusted according to a voltage of the gate of the driving transistor.
摘要翻译：有机电致发光显示装置包括多个像素，所述多个像素中的每一个包括：连接到栅极线和数据线的开关晶体管; 驱动晶体管，其中通过所述开关晶体管的数据线的数据电压被反射到所述驱动晶体管的栅极; 采样晶体管，其对所述驱动晶体管的阈值电压进行采样，其中所述采样晶体管的栅极连接到控制线，并且所述采样阈值电压被反射到所述驱动晶体管的栅极中; 初始化晶体管，其中初始化晶体管的栅极连接到先前或下一个栅极线，并且通过初始化晶体管的初始化电压被反射到驱动晶体管的栅极中; 以及连接到所述驱动晶体管的有机发光二极管，其中根据所述驱动晶体管的栅极的电压来调节所述有机发光二极管的驱动电流。

15. 发明授权

US09330939B2 Method of enabling seamless cobalt gap-fill 有权
标题翻译：实现无缝钴填隙的方法
公开(公告)号：US09330939B2
公开(公告)日：2016-05-03
申请号：US13786644
申请日：2013-03-06
申请人： Bhushan N. Zope , Avgerinos V. Gelatos , Bo Zheng , Yu Lei , Xinyu Fu , Srinivas Gandikota , Sang-Ho Yu , Mathew Abraham
发明人： Bhushan N. Zope , Avgerinos V. Gelatos , Bo Zheng , Yu Lei , Xinyu Fu , Srinivas Gandikota , Sang-Ho Yu , Mathew Abraham
IPC分类号： H01L21/76 , H01L21/48 , H01L21/02 , H01L21/768 , H01L21/285
CPC分类号： H01L21/76879 , H01L21/02057 , H01L21/2855 , H01L21/28556 , H01L21/4846 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L23/5329 , H01L29/66621
摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
摘要翻译：提供了在半导体器件的接触结构中沉积接触金属层的方法。在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

16. 发明授权

US08284124B2 Organic electroluminescent display device and driving method of the same 有权
标题翻译：有机电致发光显示装置及其驱动方法
公开(公告)号：US08284124B2
公开(公告)日：2012-10-09
申请号：US11646855
申请日：2006-12-28
申请人： Jin-Hyoung Kim , In-Hwan Kim , Seung-Chan Byun , Sang-Ho Yu
发明人： Jin-Hyoung Kim , In-Hwan Kim , Seung-Chan Byun , Sang-Ho Yu
IPC分类号： G09G3/32 , G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0842 , G09G2310/0251
摘要： An organic electroluminescent display device includes an organic light-emitting diode, a first transistor outputting a data voltage by an nth scan signal (n is a natural number), a second transistor providing a current to the organic light-emitting by the data voltage, a capacitor storing the data voltage, and a third transistor supplying the second transistor and the capacitor with a pre-charge voltage by an (n−1)th scan signal, the pre-charge voltage having an opposite polarity to the data voltage.
摘要翻译：有机电致发光显示装置包括：有机发光二极管，通过第n扫描信号（n为自然数）输出数据电压的第一晶体管，通过数据电压向有机发光发光的第二晶体管，存储数据电压的电容器和通过第（n-1）扫描信号向第二晶体管和电容器提供预充电电压的第三晶体管，预充电电压具有与数据电压相反的极性。

17. 发明申请

US20100156875A1 Organic electroluminescent display device and method of driving the same 有权
标题翻译：有机电致发光显示装置及其驱动方法
公开(公告)号：US20100156875A1
公开(公告)日：2010-06-24
申请号：US12591310
申请日：2009-11-16
申请人： Hak-Su Kim , Sang-Ho Yu , Won-Kyu Ha
发明人： Hak-Su Kim , Sang-Ho Yu , Won-Kyu Ha
IPC分类号： G09G5/00 , G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2310/0224 , G09G2310/0251 , G09G2320/0233 , G09G2320/0252 , G09G2320/043
摘要： An organic electroluminescent display device includes a plurality of pixels, each one of the plurality of pixels including: a switching transistor that is connected to a gate line and a data line; a driving transistor, wherein a data voltage of the data line passing through the switching transistor is reflected into a gate of the driving transistor; a sampling transistor that samples a threshold voltage of the driving transistor, wherein a gate of the sampling transistor is connected to a control line, and the sampled threshold voltage is reflected into the gate of the driving transistor; an initializing transistor, wherein a gate of the initializing transistor is connected to a previous or next gate line, and an initialization voltage passing through the initializing transistor is reflected into the gate of the driving transistor; and an organic light emitting diode that is connected to the driving transistor, wherein a driving current of the organic light emitting diode is adjusted according to a voltage of the gate of the driving transistor.
摘要翻译：有机电致发光显示装置包括多个像素，所述多个像素中的每一个包括：连接到栅极线和数据线的开关晶体管; 驱动晶体管，其中通过所述开关晶体管的数据线的数据电压被反射到所述驱动晶体管的栅极; 采样晶体管，其对所述驱动晶体管的阈值电压进行采样，其中所述采样晶体管的栅极连接到控制线，并且所述采样阈值电压被反射到所述驱动晶体管的栅极中; 初始化晶体管，其中初始化晶体管的栅极连接到先前或下一个栅极线，并且通过初始化晶体管的初始化电压被反射到驱动晶体管的栅极中; 以及连接到所述驱动晶体管的有机发光二极管，其中根据所述驱动晶体管的栅极的电压来调节所述有机发光二极管的驱动电流。

18. 发明申请

US20070296651A1 Organic electroluminescent display device and driving method of the same 有权
标题翻译：有机电致发光显示装置及其驱动方法
公开(公告)号：US20070296651A1
公开(公告)日：2007-12-27
申请号：US11646855
申请日：2006-12-28
申请人： Jin-Hyoung Kim , In-Hwan Kim , Seung-Chan Byun , Sang-Ho Yu
发明人： Jin-Hyoung Kim , In-Hwan Kim , Seung-Chan Byun , Sang-Ho Yu
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0842 , G09G2310/0251
摘要： An organic electroluminescent display device includes an organic light-emitting diode, a first transistor outputting a data voltage by an nth scan signal (n is a natural number), a second transistor providing a current to the organic light-emitting by the data voltage, a capacitor storing the data voltage, and a third transistor supplying the second transistor and the capacitor with a pre-charge voltage by an (n−1)th scan signal, the pre-charge voltage having an opposite polarity to the data voltage.
摘要翻译：有机电致发光显示装置包括：有机发光二极管，通过第n扫描信号（n为自然数）输出数据电压的第一晶体管，通过数据电压向有机发光发光的第二晶体管，存储数据电压的电容器和通过第（n-1）扫描信号向第二晶体管和电容器提供预充电电压的第三晶体管，预充电电压具有与数据电压相反的极性。

19. 发明授权

US06660135B2 Staged aluminum deposition process for filling vias 失效
标题翻译：分阶段铝沉积工艺用于填充过孔
公开(公告)号：US06660135B2
公开(公告)日：2003-12-09
申请号：US10038199
申请日：2001-12-21
申请人： Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
发明人： Sang-Ho Yu , Yonghwa Chris Cha , Murali Abburi , Shri Singhvi , Fufa Chen
IPC分类号： C25C1434
CPC分类号： H01L21/76882
摘要： A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.
摘要翻译：一种半导体金属化工艺，用于在没有空隙的基板上提供完整的通孔填充，以及没有凹槽的平面金属表面。在一个方面，将耐火层沉积在具有高比例接触或在其上形成的通孔的基底上。然后将保形PVD金属层（例如Al或Cu）以低于约1毫托的压力沉积到耐火层上。然后，通孔和/或触点用金属填充，例如通过将通过物理气相沉积沉积的附加金属回流到共形PVD金属层上。该方法优选在包括长抛PVD室的集成处理系统中进行，其中靶和基板被分开至少100mm，以及也用作回流室的热金属PVD室。

20. 发明授权

US08536778B2 Dual panel type organic electroluminescent display device and method of fabricating the same 有权
标题翻译：双面板型有机电致发光显示装置及其制造方法
公开(公告)号：US08536778B2
公开(公告)日：2013-09-17
申请号：US13040936
申请日：2011-03-04
申请人： Jung-Soo Heo , Jae-Hee Park , Sang-Ho Yu , Kyung-Min Park , Sung-Hoon Choi , Seok-Jong Lee
发明人： Jung-Soo Heo , Jae-Hee Park , Sang-Ho Yu , Kyung-Min Park , Sung-Hoon Choi , Seok-Jong Lee
IPC分类号： H01L51/52
CPC分类号： H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L51/5088 , H01L2251/5315
摘要： An organic electroluminescent device including a switching element and a driving element connected to the switching element on a substrate including a pixel region, a cathode connected to the driving element, in which the cathode includes molybdenum (Mo), an emitting layer on the cathode, and an anode on the emitting layer.
摘要翻译：一种有机电致发光器件，包括开关元件和连接到基板上的开关元件的驱动元件，该基板包括像素区域，与驱动元件连接的阴极，阴极包括钼（Mo），阴极上的发光层，和发光层上的阳极。

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