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11. 发明授权

US5245211A Device for the protection against breakdown of an N+ type diffused region inserted in vertical-type semiconductor integrated power structure 失效
标题翻译：用于防止在垂直型半导体集成电力结构中插入的N +型扩散区域的保护装置
公开(公告)号：US5245211A
公开(公告)日：1993-09-14
申请号：US605448
申请日：1990-10-30
申请人： Mario Paparo , Sergio Palara
发明人： Mario Paparo , Sergio Palara
IPC分类号： H01L29/74 , H01L21/822 , H01L27/02 , H01L27/04
CPC分类号： H01L27/0248
摘要： A device accomplishes protection against breakdown of an N+ type diffused region (6) inserted in a vertical-type semiconductor integrated power structure. Such a structure comprises N+ type substrate (1) over which there is superimposed an N- type epitaxial layer (2) in which a grounded P type insulation pocket (3) is obtained. The insulation pocket (3) contains an N type region (4) including a P type region (5) for the containment of the N+ type diffused region (6). The diffused region (6) is insulated electrically with respect to the P type containment region (5).

12. 发明授权

US5177659A Device for protection against the short circuit of an MOS-type power device, with a preset dependance on the temperature at which the power device operates 失效
标题翻译：用于防止MOS型功率器件短路的装置，其预设依赖于功率器件工作的温度
公开(公告)号：US5177659A
公开(公告)日：1993-01-05
申请号：US605449
申请日：1990-10-30
申请人： Michele Zisa , Giuseppe Scilla , Sergio Palara
发明人： Michele Zisa , Giuseppe Scilla , Sergio Palara
IPC分类号： H01L29/78 , H01L27/02 , H01L27/04 , H03K17/08 , H03K17/082 , H03K17/14
CPC分类号： H03K17/0822 , H01L27/0251 , H03K17/145 , H03K2017/0806
摘要： The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch cirucit arranged in parallel with a main branch circuit which includes the power transistor. The secondary branch includes a control MOS transistor having the same characteristics as the power transistor under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor. The gate of the control transistor is connected directly with that of the power transistor. The secondary branch also includes means sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor, act on the gate common to the control and to the power transistors so as to lower its voltage and thus limit the conduction of same.
摘要翻译：用于防止MOS型功率器件的短路的装置包括与包括功率晶体管的主分支电路并联布置的至少一个次级分支电路。次级分支包括具有与被控制的功率晶体管相同的特性的控制MOS晶体管，以及导通等于流过功率晶体管的电流的一部分的电流的能力。控制晶体管的栅极直接与功率晶体管的栅极连接。次级分支还包括对温度敏感的装置，在对应于功率晶体管的短路电流的电流的情况下，对作为控制和公用的功率晶体管的栅极起作用以降低其电压，因此限制传导相同。

13. 发明授权

US4563632A Monolithically integratable constant-current generating circuit with low supply voltage 失效
标题翻译：具有低电源电压的单片可积分恒流发电电路
公开(公告)号：US4563632A
公开(公告)日：1986-01-07
申请号：US534146
申请日：1983-09-21
申请人： Sergio Palara , Bruno Murari
发明人： Sergio Palara , Bruno Murari
IPC分类号： G05F3/30 , G05F3/26 , G05F3/20
CPC分类号： G05F3/265
摘要： A monolithically integratable constant-current generating circuit includes a current-generating circuit having a control terminal and two output terminals, from which currents flow that are bound by a constant proportionality ratio.There is connected to one output terminal the input branch of a circuit having a current mirror and having a current gain which varies with the level of the current itself. A first input terminal of a current-comparator and amplifier circuit is connected to the output branch of the current mirror; a second input terminal is connected to the second output terminal of the current-generating circuit and the control terminal is connected to the output terminal of the current-comparator and amplifier circuit.
摘要翻译：单片可积分恒流产生电路包括电流产生电路，其具有控制端和两个输出端，电流以恒定的比例比来限制。连接到一个输出端子，具有电流镜的电路的输入支路，并具有随电流本身的电平而变化的电流增益。电流比较器和放大器电路的第一输入端连接到电流镜的输出分支; 第二输入端子连接到电流产生电路的第二输出端子，并且控制端子连接到电流比较器和放大器电路的输出端子。

14. 发明授权

US4368436A Overload protection device for power output circuits 失效
标题翻译：电源输出电路过载保护装置
公开(公告)号：US4368436A
公开(公告)日：1983-01-11
申请号：US154082
申请日：1980-05-28
申请人： Sergio Palara , Silvano Tintori
发明人： Sergio Palara , Silvano Tintori
IPC分类号： H03F1/42 , H03F1/52 , H03K17/082 , H03F21/00
CPC分类号： H03K17/0826 , H03F1/52
摘要： A protection device for a power output circuit, designed such that the device protects the power output circuit from damage due to output overloads and simultaneously eliminates the power dissipation of the protected device, thereby conserving power and eliminating unnecessary heating of both the protected device and adjacent components. The protection device includes a comparator for comparing the voltage at the input to the power output circuit with the voltage at the output of the power output circuit. If the power output circuit has a unity voltage gain, its voltage output equals its voltage input under normal operating conditions but its voltage output becomes lower than its voltage input under overload conditions. The comparator is arranged to inhibit the power operation of the power output circuit and reduce its power dissipation to zero when the input voltage of the power output circuit exceeds the output voltage thereof by a specified value, that is, under overload conditions.
摘要翻译：一种用于功率输出电路的保护装置，设计成使得该装置保护功率输出电路免受由于输出过载的损害，同时消除受保护装置的功率消耗，从而节省功率并消除受保护装置和相邻组件。保护装置包括比较器，用于将输入端与电源输出电路的电压与功率输出电路输出端的电压进行比较。如果功率输出电路具有单位电压增益，其电压输出等于其在正常工作条件下的电压输入，但其电压输出在过载条件下低于其电压输入。比较器被布置为当功率输出电路的输入电压超过其输出电压达到指定值，即在过载条件下时，禁止功率输出电路的功率操作并将其功率消耗降低到零。

15. 发明授权

US6051933A Bipolar power device having an integrated thermal protection for driving electric loads 失效
标题翻译：具有用于驱动电负载的集成热保护的双极功率器件
公开(公告)号：US6051933A
公开(公告)日：2000-04-18
申请号：US638382
申请日：1996-04-26
申请人： Natale Aiello , Atanasio La Barbera , Sergio Palara
发明人： Natale Aiello , Atanasio La Barbera , Sergio Palara
IPC分类号： H02H5/04 , H03K17/08 , H03K17/0812 , H05B41/285 , H05B37/00 , H03K17/56
CPC分类号： H05B41/2856 , H03K17/08126 , H02H5/044 , H03K2017/0806
摘要： A monolithically integrated power device for driving electrical loads includes a power stage having a high-voltage bipolar transistor and a low-voltage auxiliary transistor cascade-connected and inserted between a first power supply terminal and a second power supply terminal of the device. The power device also includes a driver circuit for the power stage having an input connected to an input terminal of the device. In accordance with the present invention the device includes a circuit for protection thereof against an excessive temperature rise and controlling power down of the power stage. It includes specifically a temperature sensing circuit which generates a signal dependent on the temperature present in the device, a comparator circuit which receives this signal and compares it with a reference voltage and at least a first switch circuit generating an interdiction signal when the temperature in the device exceeds a preset maximum value and which is interlocked with an output of the comparator circuit and connected functionally through its output to the power stage. The device is advantageously usable in a fluorescent lamp driving circuit, that is to say in the so-called "lamp ballast".
摘要翻译：用于驱动电负载的单片集成功率器件包括具有高压双极晶体管的功率级和串联连接并插入在器件的第一电源端子和第二电源端子之间的低压辅助晶体管。功率器件还包括用于功率级的驱动器电路，其具有连接到器件的输入端子的输入。根据本发明，该装置包括用于保护其抵抗过度温度上升并控制功率级的掉电的电路。其具体包括温度检测电路，其产生取决于设备中存在的温度的信号;比较器电路，其接收该信号并将其与参考电压进行比较;以及至少第一开关电路，当至少第一开关电路产生截止信号时，器件超过预设的最大值，并与比较器电路的输出互锁，并通过其输出功能级连接到功率级。该装置有利地可用于荧光灯驱动电路，也就是说在所谓的“灯镇流器”中。

16. 发明授权

US5828244A Driving circuit and method for driving a MOS transistor with delayed activation 失效
标题翻译：用于驱动具有延迟激活的MOS晶体管的驱动电路和方法
公开(公告)号：US5828244A
公开(公告)日：1998-10-27
申请号：US688297
申请日：1996-07-30
申请人： Sergio Palara , Vito Graziano
发明人： Sergio Palara , Vito Graziano
IPC分类号： H03K17/0412 , H03K17/30 , H05B41/282 , H03K3/00
CPC分类号： H03K17/04123 , H03K17/302 , H05B41/2825
摘要： A driver circuit delays the turning on of a MOS transistor by utilizing the time-wise pattern of the circuit input signal rather than generating a delay within the circuit itself. A threshold type of circuit element is arranged so that no current flows toward or from, depending on the type of the MOS transistor, the control terminal before the voltage at the circuit input exceeds a predetermined value. This is achieved, for example, by coupling a Zener diode serially to the control terminal. Where the input signal is of a kind which increases with a degree of uniformity, the time required to exceed that threshold will correspond to the desired delay. Thus, the driver circuit can match the dynamic range of the input signal automatically.
摘要翻译：驱动电路通过利用电路输入信号的时间图案来延迟MOS晶体管的导通，而不是在电路本身内产生延迟。电路元件的阈值类型被布置成使得根据MOS晶体管的类型，电路输入端的电压之前的控制端子超过预定值时，电流不向或朝向流动。这通过例如将齐纳二极管串联耦合到控制端来实现。当输入信号是以均匀度增加的类型时，超过该阈值所需的时间将对应于期望的延迟。因此，驱动电路可以自动匹配输入信号的动态范围。

17. 发明授权

US5818120A Circuit for limiting an overvoltage on a control switch connected in series with an inductive load 失效
标题翻译：用于限制与感性负载串联连接的控制开关上的过电压的电路
公开(公告)号：US5818120A
公开(公告)日：1998-10-06
申请号：US644519
申请日：1996-05-10
申请人： Sergio Palara
发明人： Sergio Palara
IPC分类号： F02P3/055 , H03K17/082 , F02P1/08
CPC分类号： H03K17/0826 , F02P3/0552
摘要： An overvoltage limiting circuit having first and second terminals to produce a temperature-stable voltage proportional to an overvoltage condition. The overvoltage limiting circuit includes a first transistor having a first terminal connected to the first terminal of the circuit, a second terminal kept at a reference voltage relative to the second terminal of the circuit, and a control terminal coupled with the second terminal of the circuit through equivalent resistor means whose value depends on the value of the temperature-stable voltage so that the first transistor has a temperature-stable breakdown voltage.
摘要翻译：一种具有第一和第二端子以产生与过电压状态成比例的温度稳定电压的过电压限制电路。过电压限制电路包括第一晶体管，其具有连接到电路的第一端的第一端子，第二端子相对于电路的第二端子保持在参考电压，以及与电路的第二端子耦合的控制端子通过等效电阻器件的值取决于温度稳定电压的值，使得第一晶体管具有温度稳定的击穿电压。

18. 发明授权

US5635868A Power transistor current limiter 失效
标题翻译：功率晶体管限流器
公开(公告)号：US5635868A
公开(公告)日：1997-06-03
申请号：US289122
申请日：1994-08-11
申请人： Natale Aiello , Sergio Palara , Salvatore Scaccianoce
发明人： Natale Aiello , Sergio Palara , Salvatore Scaccianoce
IPC分类号： H03G11/00 , H03K17/0812 , H03K17/082 , H03K17/16 , G05F1/10 , H03K17/60 , H03K17/687
CPC分类号： H03K17/08126 , H03K17/0826 , H03K17/16
摘要： A circuit to limit the maximum current passed from a power transistor (T'p) to a load (ZL) which is connected to an output terminal of the transistor. The circuit includes an error amplifier (1'), a driver circuit (P') for the transistor (T'p), and a current detector for detecting the current (IL) flowing through the load (ZL). The current detector is provided with at least first and second terminals, includes a circuit block (2) having an input terminal connected to the control terminal of (T'p) and an output terminal connected to the current generator internal to the amplifier (1'), one input (B') of the amplifier (1') being connected to the first terminal of (Rs) and the other input (A') connected to the second terminal of (Rs). The introduction of the circuit block lowers the open-loop system gain making it stable and producing a smooth reduction of any rise in the load current (IL).
摘要翻译：用于限制从功率晶体管（T'p）到连接到晶体管的输出端子的负载（ZL）的最大电流的电路。该电路包括误差放大器（1'），用于晶体管（T'p）的驱动电路（P'）和用于检测流过负载（ZL）的电流（IL）的电流检测器。电流检测器设置有至少第一和第二端子，包括具有连接到（T'p）的控制端子的输入端子的电路块（2）和连接到放大器（1）内部的电流发生器的输出端子 '），放大器（1'）的一个输入（B'）连接到（Rs）的第一端子，而另一个输入端（A'）连接到（Rs）的第二端子。电路块的引入降低了开环系统增益，使其稳定，并可以平滑减少负载电流（IL）的任何上升。

19. 发明授权

US5617046A Generation of a diagnostic signal when the current through a power transistor reaches a level close to a limit current 失效
标题翻译：当通过功率晶体管的电流达到接近极限电流的电平时，产生诊断信号
公开(公告)号：US5617046A
公开(公告)日：1997-04-01
申请号：US272786
申请日：1994-07-08
申请人： Sergio Palara , Stefano Sueri
发明人： Sergio Palara , Stefano Sueri
IPC分类号： G01R31/26 , F02P3/05 , G01R19/165 , H03K17/08 , H03K17/64 , H03K19/082
CPC分类号： F02P3/051
摘要： A diagnostic signal, indicative of the reaching of a predefined level, lower than a fixed maximum limit value, by the current flowing through a power transistor, is generated while employing a single comparator of a reference voltage with the voltage present across a sensing resistance, thus preventing problems arising from different offset characteristics of distinct comparators. By the use of current mirrors, the generation of a diagnostic signal when the current reaches a level that can be fixed very close to the maximum limit value, may be reliably triggered, irrespectively of the offset characteristic of the single comparator employed.
摘要翻译：产生指示通过流过功率晶体管的电流达到预定电平低于固定最大极限值的诊断信号，同时使用具有跨越感测电阻的电压的参考电压的单个比较器，从而防止不同比较器的不同偏移特性引起的问题。通过使用电流镜，可以可靠地触发当电流达到非常接近最大极限值的电平时的诊断信号的产生，而与所使用的单个比较器的偏移特性无关。

20. 发明授权

US5464993A Monolithic integrated bridge transistor circuit and corresponding manufacturing process 失效
标题翻译：单片集成电桥晶体管电路及相应的制造工艺
公开(公告)号：US5464993A
公开(公告)日：1995-11-07
申请号：US124245
申请日：1993-09-20
申请人： Raffaele Zambrano , Sergio Palara
发明人： Raffaele Zambrano , Sergio Palara
IPC分类号： H01L27/06 , H01L29/10
CPC分类号： H01L27/0617
摘要： A monolithically integrated, transistor bridge circuit of a type suiting power applications, comprises at least one pair of IGBT transistors (M1,M2) together with vertically-conducting bipolar junction transistors transistors (T1,T2). These IGBT transistors are laterally conducting, having drain terminals (9,19) formed on the surface of the integrated circuit (1), and through such terminals, they are connected to another pair of transistors (T1,T2) of the bipolar type.
摘要翻译：一种适合功率应用的单片集成的晶体管桥式电路，包括至少一对IGBT晶体管（M1，M2）以及垂直导电的双极结型晶体管晶体管（T1，T2）。这些IGBT晶体管是侧向导通的，具有形成在集成电路（1）的表面上的漏极端子（9,19），并且通过这些端子连接到双极型的另一对晶体管（T1，T2）。

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