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11. 发明申请

US20110256735A1 ALD OF METAL SILICATE FILMS 有权
标题翻译：金属硅酸盐膜
公开(公告)号：US20110256735A1
公开(公告)日：2011-10-20
申请号：US13175204
申请日：2011-07-01
申请人： Chang-Gong Wang , Eric Shero , Glen Wilk
发明人： Chang-Gong Wang , Eric Shero , Glen Wilk
IPC分类号： H01L21/316
CPC分类号： C23C16/405 , C23C16/401 , C23C16/45531
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与硅源化学品，金属源化学品和氧化剂的交替和顺序的气相脉冲接触，其中所述金属源化学品是在硅源化学品之后提供的下一反应物。根据一些实施方案的方法可以用于形成富含硅的硅酸铪硅酸盐和硅酸锆膜，其在基材表面上具有基本均匀的膜覆盖。

12. 发明授权

US07972977B2 ALD of metal silicate films 有权
标题翻译：金属硅酸盐膜的ALD
公开(公告)号：US07972977B2
公开(公告)日：2011-07-05
申请号：US11868333
申请日：2007-10-05
申请人： Chang-Gong Wang , Eric Shero , Glen Wilk
发明人： Chang-Gong Wang , Eric Shero , Glen Wilk
IPC分类号： H01L21/31
CPC分类号： C23C16/405 , C23C16/401 , C23C16/45531
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与硅源化学品，金属源化学品和氧化剂的交替和顺序的气相脉冲接触，其中所述金属源化学品是在硅源化学品之后提供的下一反应物。根据一些实施方案的方法可以用于形成富含硅的硅酸铪硅酸盐和硅酸锆膜，其在基材表面上具有基本均匀的膜覆盖。

13. 发明申请

US20050112827A1 High permittivity silicate gate dielectric 有权
标题翻译：高介电常数硅酸盐栅极电介质
公开(公告)号：US20050112827A1
公开(公告)日：2005-05-26
申请号：US11015604
申请日：2004-12-17
申请人： John Anthony , Scott Summerfelt , Robert Wallace , Glen Wilk
发明人： John Anthony , Scott Summerfelt , Robert Wallace , Glen Wilk
IPC分类号： H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/336 , H01L21/4763 , H01L21/3205 , H01L21/31 , H01L21/469
CPC分类号： H01L21/31691 , H01L21/02181 , H01L21/02323 , H01L21/0234 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3143 , H01L21/31612 , H01L21/31641 , H01L21/31645 , H01L29/517
摘要： A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A metal silicate gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Silicate layer 36 may be, e.g., hafnium silicate, such that the dielectric constant of the gate dielectric is significantly higher than the dielectric constant of silicon dioxide. However, the silicate gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability. The present invention includes methods for depositing both amorphous and polycrystalline silicate layers, as well as graded composition silicate layers.
摘要翻译：本文公开了包括高介电常数硅酸盐栅极电介质的场效应半导体器件及其形成方法。该器件包括其中形成有半导体沟道区24的硅衬底20。在该衬底上形成金属硅酸盐栅极电介质层36，之后是导电栅极38。硅酸盐层36可以是例如硅酸铪，使得栅极电介质的介电常数显着高于二氧化硅的介电常数。然而，硅酸盐栅极电介质也可以被设计成具有二氧化硅的优点。高击穿，低界面状态密度和高稳定性。本发明包括沉积无定形和多晶硅酸盐层以及梯度组合硅酸盐层的方法。

14. 发明授权

US06040230A Method of forming a nano-rugged silicon-containing layer 失效
标题翻译：形成纳米坚固的含硅层的方法
公开(公告)号：US06040230A
公开(公告)日：2000-03-21
申请号：US39075
申请日：1998-03-13
申请人： John Mark Anthony , Robert M. Wallace , Yi Wei , Glen Wilk
发明人： John Mark Anthony , Robert M. Wallace , Yi Wei , Glen Wilk
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L28/82
摘要： An embodiment of the instant invention is a method of forming a nano-rugged silicon-containing layer, the method comprising the steps of: providing a first silicon-containing layer (steps 202 or 802); providing a patterning layer over the first silicon-containing layer (steps 204 or 804); the patterning layer comprised of an amorphous substance; providing a second silicon-containing layer (steps 206 or 808) over the patterning layer; and wherein the patterning layer creates a nano-rugged texture in the second silicon-containing layer. Preferably, the first and second silicon-containing layers are comprised of polycrystalline silicon. In an alternative embodiment, the patterning layer is comprised of a material which has small holes such that the step of providing the second silicon-containing layer utilizes the first silicon-containing layer as a seed layer through the small holes so as to form the second silicon-containing layer. In another alternative embodiment, the second silicon-containing layer is comprised of a plurality of islands of the silicon-containing material separated by voids in the material. Preferably, the patterning layer is comprised of SiO.sub.2.
摘要翻译：本发明的一个实施方案是一种形成纳米坚固的含硅层的方法，所述方法包括以下步骤：提供第一含硅层（步骤202或802）; 在第一含硅层上提供图形层（步骤204或804）; 所述图案层由无定形物质构成; 在所述图案化层上提供第二含硅层（步骤206或808）; 并且其中所述图案化层在所述第二含硅层中产生纳米坚固纹理。优选地，第一和第二含硅层由多晶硅组成。在替代实施例中，图案化层由具有小孔的材料构成，使得提供第二含硅层的步骤通过该小孔利用第一含硅层作为种子层，从而形成第二含硅层含硅层。在另一个替代实施例中，第二含硅层由多个岛状的含硅材料构成，该岛由材料中的空隙分开。优选地，图案化层由SiO 2组成。

15. 发明授权

US08563444B2 ALD of metal silicate films 有权
标题翻译：金属硅酸盐膜的ALD
公开(公告)号：US08563444B2
公开(公告)日：2013-10-22
申请号：US13175204
申请日：2011-07-01
申请人： Chang-Gong Wang , Eric Shero , Glen Wilk
发明人： Chang-Gong Wang , Eric Shero , Glen Wilk
IPC分类号： H01L21/31
CPC分类号： C23C16/405 , C23C16/401 , C23C16/45531
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与硅源化学品，金属源化学品和氧化剂的交替和顺序的气相脉冲接触，其中所述金属源化学品是在硅源化学品之后提供的下一反应物。根据一些实施方案的方法可以用于形成富含硅的硅酸铪硅酸盐和硅酸锆膜，其在基材表面上具有基本均匀的膜覆盖。

16. 发明授权

US07202166B2 Surface preparation prior to deposition on germanium 有权
标题翻译：在锗沉积之前进行表面处理
公开(公告)号：US07202166B2
公开(公告)日：2007-04-10
申请号：US10910551
申请日：2004-08-03
申请人： Glen Wilk
发明人： Glen Wilk
IPC分类号： H01L21/44
CPC分类号： H01L21/31658 , C23C16/0245 , C23C16/0281 , C23C16/405 , C23C16/45525 , H01L21/02178 , H01L21/02189 , H01L21/0228 , H01L21/02312 , H01L21/02315 , H01L21/28158 , H01L21/28194 , H01L21/28255 , H01L21/3141 , H01L21/3145 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/1054 , H01L29/16 , H01L29/513 , H01L29/517 , H01L29/66477
摘要： Methods are provided for treating germanium surfaces in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the germanium surface is treated with plasma products or thermally reacted with vapor reactants. Examples of surface treatments leave oxygen bridges, nitrogen bridges, —OH, —NH and/or —NH2 terminations that more readily adsorb ALD reactants. The surface treatments avoid deep penetration of the reactants into the germanium bulk but improve nucleation.
摘要翻译：提供了用于处理锗表面以备后续沉积的方法，特别是通过原子层沉积（ALD）的栅介质沉积。在沉积之前，锗表面用等离子体产物处理或与蒸汽反应物热反应。表面处理的实例留下更容易吸附ALD反应物的氧桥，氮桥，-OH，-NH和/或-NH 2端基。表面处理避免了反应物深入到锗体内，但改善成核。

17. 发明申请

US20050042846A1 Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process 审中-公开
标题翻译：具有高介电常数的金属氧化物介电材料的半导体器件的制造工艺，用缓冲退火工艺进行退火
公开(公告)号：US20050042846A1
公开(公告)日：2005-02-24
申请号：US10947218
申请日：2004-09-23
申请人： Martin Green , Glen Wilk
发明人： Martin Green , Glen Wilk
IPC分类号： H01L21/02 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/84
CPC分类号： H01L21/28185 , H01L21/02178 , H01L21/02263 , H01L21/02304 , H01L21/02337 , H01L21/28194 , H01L21/31612 , H01L21/31616 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of forming an annealed high-K metal oxide transistor gate structure is disclosed. A metal oxide layer is formed over a semiconductor substrate. The metal oxide layer undergoes a buffered annealed process in an oxygen atmosphere to anneal the metal oxide layer at or below the thermodynamic chemical equilibrium of SiO/SiO2 and at or above the thermodynamic chemical equilibrium of the metal oxide layer.
摘要翻译：公开了一种形成退火的高K金属氧化物晶体管栅极结构的方法。在半导体衬底上形成金属氧化物层。金属氧化物层在氧气氛中进行缓冲退火处理，以在SiO 2 / SiO 2的热力学化学平衡或等于或高于金属氧化物层的热力学化学平衡处退火金属氧化物层。

18. 发明授权

US07799680B2 Surface preparation prior to deposition on germanium 有权
标题翻译：在锗沉积之前进行表面处理
公开(公告)号：US07799680B2
公开(公告)日：2010-09-21
申请号：US11651324
申请日：2007-01-09
申请人： Glen Wilk
发明人： Glen Wilk
IPC分类号： H01L21/44
CPC分类号： H01L21/31658 , C23C16/0245 , C23C16/0281 , C23C16/405 , C23C16/45525 , H01L21/02178 , H01L21/02189 , H01L21/0228 , H01L21/02312 , H01L21/02315 , H01L21/28158 , H01L21/28194 , H01L21/28255 , H01L21/3141 , H01L21/3145 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/1054 , H01L29/16 , H01L29/513 , H01L29/517 , H01L29/66477
摘要： Methods are provided for treating germanium surfaces in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the germanium surface is treated with plasma products or thermally reacted with vapor reactants. Examples of surface treatments leave oxygen bridges, nitrogen bridges, —OH, —NH and/or —NH2 terminations that more readily adsorb ALD reactants. The surface treatments avoid deep penetration of the reactants into the germanium bulk but improve nucleation.
摘要翻译：提供了用于处理锗表面以备后续沉积的方法，特别是通过原子层沉积（ALD）的栅介质沉积。在沉积之前，锗表面用等离子体产物处理或与蒸汽反应物热反应。表面处理的实例留下更容易吸附ALD反应物的氧桥，氮桥，-OH，-NH和/或-NH2终端。表面处理避免了反应物深入到锗体内，但改善成核。

19. 发明申请

US20080085610A1 ALD OF METAL SILICATE FILMS 有权
标题翻译：金属硅酸盐膜
公开(公告)号：US20080085610A1
公开(公告)日：2008-04-10
申请号：US11868333
申请日：2007-10-05
申请人： Chang-Gong Wang , Eric Shero , Glen Wilk
发明人： Chang-Gong Wang , Eric Shero , Glen Wilk
IPC分类号： H01L21/31 , C01B33/20
CPC分类号： C23C16/405 , C23C16/401 , C23C16/45531
摘要： Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
摘要翻译：提供了形成金属硅酸盐膜的方法。所述方法包括使基板与硅源化学品，金属源化学品和氧化剂的交替和顺序的气相脉冲接触，其中所述金属源化学品是在硅源化学品之后提供的下一反应物。根据一些实施方案的方法可以用于形成富含硅的硅酸铪硅酸盐和硅酸锆膜，其在基材表面上具有基本均匀的膜覆盖。

20. 发明申请

US20070111521A1 Surface preparation prior to deposition on germanium 有权
公开(公告)号：US20070111521A1
公开(公告)日：2007-05-17
申请号：US11651324
申请日：2007-01-09
申请人： Glen Wilk
发明人： Glen Wilk
IPC分类号： H01L21/44
CPC分类号： H01L21/31658 , C23C16/0245 , C23C16/0281 , C23C16/405 , C23C16/45525 , H01L21/02178 , H01L21/02189 , H01L21/0228 , H01L21/02312 , H01L21/02315 , H01L21/28158 , H01L21/28194 , H01L21/28255 , H01L21/3141 , H01L21/3145 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/1054 , H01L29/16 , H01L29/513 , H01L29/517 , H01L29/66477
摘要： Methods are provided for treating germanium surfaces in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the germanium surface is treated with plasma products or thermally reacted with vapor reactants. Examples of surface treatments leave oxygen bridges, nitrogen bridges, —OH, —NH and/or —NH2 terminations that more readily adsorb ALD reactants. The surface treatments avoid deep penetration of the reactants into the germanium bulk but improve nucleation.

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