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11. 发明授权

US06465996B2 Constant voltage circuit with a substitute circuit in case of input voltage lowering 有权
标题翻译：在输入电压降低的情况下，带有替代电路的恒压电路
公开(公告)号：US06465996B2
公开(公告)日：2002-10-15
申请号：US09799106
申请日：2001-03-06
申请人： Junichi Nagata , Kiyoshi Yamamoto , Hirokazu Itakura , Masahiro Kitagawa , Hiroyuki Ban , Hiroyuki Kawabata , Shinichi Maeda
发明人： Junichi Nagata , Kiyoshi Yamamoto , Hirokazu Itakura , Masahiro Kitagawa , Hiroyuki Ban , Hiroyuki Kawabata , Shinichi Maeda
IPC分类号： G05F316
CPC分类号： H02J7/0063
摘要： A constant voltage circuit robust to the input voltage lowering is disclosed. The invention is applied to a constant voltage circuit fed with an input voltage through first and second power conductors for transferring the input voltage to a load as an output voltage through an output transistor. An inventive constant voltage circuit is provided with a substitute circuit, responsive to a detection of the lowing of the input voltage to a predetermined voltage, for providing a substitute output path that is connected in parallel with the output transistor. Doing this minimize the degree of lowering of the second voltage due to the lowering of said first voltage. The output transistor may be nay of NPN and PNP transistors and P-type and N-type MOS FETs.
摘要翻译：公开了对输入电压降低稳健的恒定电压电路。本发明应用于通过第一和第二电力导体馈送输入电压的恒压电路，用于通过输出晶体管将输入电压传送到负载作为输出电压。本发明的恒压电路具有替代电路，响应于将输入电压降低到预定电压，以提供与输出晶体管并联连接的替代输出路径。这样做使得由于所述第一电压的降低而使第二电压降低的程度最小化。输出晶体管可以是NPN和PNP晶体管以及P型和N型MOS FET。

12. 发明授权

US5883483A Inductance L load actuating apparatus 失效
标题翻译：电感L负载致动装置
公开(公告)号：US5883483A
公开(公告)日：1999-03-16
申请号：US743878
申请日：1996-11-06
申请人： Junichi Nagata , Junji Hayakawa , Hiroyuki Ban
发明人： Junichi Nagata , Junji Hayakawa , Hiroyuki Ban
IPC分类号： H02P8/16 , H02P8/00 , H02P8/34 , H02P8/12
CPC分类号： H02P8/34 , H02P8/00
摘要： In an actuation circuit for a stepping motor, one switching element and its associated coil are connected at one connecting point, while the other switching element and its associated coil are connected at another connecting point. A pair of switching circuits and a pair of rectifying circuits are provided between two connecting points. When one of switching elements is changed from an ON condition to an OFF condition, the voltage difference between two connecting points allows the current to flow in a designated direction through the switching circuit and the rectifying circuit combined, thereby releasing the energy stored in the coils.
摘要翻译：在用于步进电机的驱动电路中，一个开关元件及其相关联的线圈在一个连接点处连接，而另一个开关元件及其相关联的线圈在另一个连接点处连接。一对开关电路和一对整流电路设置在两个连接点之间。当开关元件中的一个从接通状态变为关闭状态时，两个连接点之间的电压差允许电流通过开关电路和整流电路在指定方向上流动，从而释放存储在线圈中的能量。

13. 发明授权

US5661332A Semiconductor diffused resistor 失效
标题翻译：半导体扩散电阻
公开(公告)号：US5661332A
公开(公告)日：1997-08-26
申请号：US378273
申请日：1995-01-26
申请人： Katsumi Nakamura , Tomohisa Yamamoto , Hiroyuki Ban
发明人： Katsumi Nakamura , Tomohisa Yamamoto , Hiroyuki Ban
IPC分类号： H01C7/00 , H01L21/761 , H01L21/822 , H01L27/04 , H01L29/8605 , H01L29/00
CPC分类号： H01L29/8605
摘要： A diffused resistor capable of suppressing variation of characteristics caused by leakage of current occurring under high-temperature conditions. An N-type layer is epitaxially grown on a P-type substrate, and an N-type resistor island isolated by a P-type isolation region is formed. A P-type diffused resistor is formed in the island. An N-type region of high impurity concentration is disposed in close proximity to the high-potential end of the P-type diffused resistor. An electrode is brought into contact with not only the high-potential end but also the N-type high-impurity concentration region through the same contact hole. Thus, a parasitic transistor, which is formed from the P-type diffused resistor, the N-type resistor island and the P-type substrate (P-type isolation region), can be prevented from turning on with a minimal increase of the element area.
摘要翻译：一种扩散电阻器，其能够抑制由高温条件下发生的电流泄漏引起的特性变化。在P型衬底上外延生长N型层，并且形成由P型隔离区隔离的N型电阻器岛。岛内形成P型扩散电阻。高杂质浓度的N型区域靠近P型扩散电阻器的高电位端设置。电极不仅通过相同的接触孔与高电位端而且与N型高杂质浓度区域接触。因此，可以防止由P型扩散电阻器，N型电阻岛和P型衬底（P型隔离区域）形成的寄生晶体管以元件的最小增加而导通区。

14. 发明授权

US5313155A Driving apparatus for cross-coil type analog indicating instrument having reduced ripple 失效
标题翻译：交叉线圈型模拟指示仪的驱动装置具有减小的纹波
公开(公告)号：US5313155A
公开(公告)日：1994-05-17
申请号：US885730
申请日：1992-05-19
申请人： Tomohisa Yamamoto , Hiroyuki Ban
发明人： Tomohisa Yamamoto , Hiroyuki Ban
IPC分类号： G01D13/22 , G01R5/16 , G01R7/06 , G01R23/06 , G01R11/36 , G01P3/48
CPC分类号： G01R5/16 , G01R7/06
摘要： A driving apparatus used for an analog indicating instrument having a pair of cross coils comprises a pulse signal generating device for generating a pulse signal having a frequency proportional to a quantity to be measured, a frequency-voltage conversion device for generating a ripple voltage proportional to the frequency of the pulse, holding a mean voltage of the ripple voltage as an analog voltage while restraining the ripple, and controlling the analog voltage so as to change following a mean value of the ripple voltage, thereby to supply the analog voltage, and driving devices for supplying a current in accordance with the analog voltage to the cross coils so as to drive these cross coils. The driving apparatus has effects on improving responsibility of frequency-voltage conversion operation in a low frequency region and reducing the deflection of a pointer of an instrument by restraining the ripples.
摘要翻译：用于具有一对交叉线圈的模拟指示仪的驱动装置包括：脉冲信号发生装置，用于产生具有与被测量成比例的频率的脉冲信号;频率电压转换装置，用于产生与脉冲的频率，在抑制纹波的同时将纹波电压的平均电压保持为模拟电压，并且控制模拟电压以随着纹波电压的平均值而改变，从而提供模拟电压，并驱动用于根据模拟电压向交叉线圈提供电流以驱动这些交叉线圈的装置。驱动装置具有改善低频区域中的频率 - 电压转换操作的责任并通过抑制波纹来减少仪器的指示器的偏转的效果。

15. 发明授权

US07972198B2 Groove machining method by means of water jet, heat exchanger member, and heat exchanger 有权
标题翻译：通过喷水，换热器构件和热交换器进行槽加工
公开(公告)号：US07972198B2
公开(公告)日：2011-07-05
申请号：US11680985
申请日：2007-03-01
申请人： Koji Noishiki , Hiroyuki Ban
发明人： Koji Noishiki , Hiroyuki Ban
IPC分类号： B24B1/00
CPC分类号： B24C1/04 , Y10T29/4935 , Y10T29/49805 , Y10T29/4981
摘要： There is provided a groove machining method by means of water jet which machines grooves by means of a water jet device including injection nozzles for injecting a water jet on a face to be machined of a member to be machined, including a step of disposing protection members which are more resistive against an injection power of the water jet than the member to be machined so as to cover a portion which is a part of the face to be machined, and on which grooves are not to be formed in order to form ends of the machined grooves in a travel direction of the injection nozzles inside an outline of the face to be machined, and a step of moving the nozzles across the protection members and the face to be machined while injecting the water jet at a predetermined injection power from the injection nozzles.
摘要翻译：提供了一种通过水喷射的凹槽加工方法，该方法通过水喷射装置对水槽进行加工，该喷水装置包括用于将喷嘴喷射在待加工构件的被加工面上的喷嘴，包括设置保护构件其比待加工的构件更能抵抗水射流的喷射力，以覆盖作为被加工面的一部分的部分，并且在其上不形成槽以形成端部在被加工面的轮廓内的注射喷嘴的行进方向上的机械加工凹槽，以及将喷嘴横跨保护构件和待加工面喷射的步骤，同时以预定的喷射功率从喷嘴。

16. 发明申请

US20070234567A1 GROOVE MACHINING METHOD BY MEANS OF WATER JET, HEAT EXCHANGER MEMBER, AND HEAT EXCHANGER 有权
标题翻译：水喷射器，热交换器构件和热交换器的机械加工方法
公开(公告)号：US20070234567A1
公开(公告)日：2007-10-11
申请号：US11680985
申请日：2007-03-01
申请人： Koji Noishiki , Hiroyuki Ban
发明人： Koji Noishiki , Hiroyuki Ban
IPC分类号： B21D53/02 , B23P17/00
CPC分类号： B24C1/04 , Y10T29/4935 , Y10T29/49805 , Y10T29/4981
摘要： There is provided a groove machining method by means of water jet which machines grooves by means of a water jet device including injection nozzles for injecting a water jet on a face to be machined of a member to be machined, including a step of disposing protection members which are more resistive against an injection power of the water jet than the member to be machined so as to cover a portion which is a part of the face to be machined, and on which grooves are not to be formed in order to form ends of the machined grooves in a travel direction of the injection nozzles inside an outline of the face to be machined, and a step of moving the nozzles across the protection members and the face to be machined while injecting the water jet at a predetermined injection power from the injection nozzles.
摘要翻译：提供了一种通过水喷射的凹槽加工方法，该方法通过水喷射装置对水槽进行加工，该喷水装置包括用于将喷嘴喷射在待加工构件的被加工面上的喷嘴，包括设置保护构件其比待加工的构件更能抵抗水射流的喷射力，以覆盖作为被加工面的一部分的部分，并且在其上不形成槽以形成端部在被加工面的轮廓内的注射喷嘴的行进方向上的机械加工凹槽，以及将喷嘴横跨保护构件和待加工面喷射的步骤，同时以预定的喷射功率从喷嘴。

17. 发明授权

US07106031B2 Electric power supply apparatus having input switching circuit 有权
标题翻译：具有输入切换电路的电力供给装置
公开(公告)号：US07106031B2
公开(公告)日：2006-09-12
申请号：US11053919
申请日：2005-02-10
申请人： Junji Hayakawa , Hiroyuki Ban , Jyunichi Nagata
发明人： Junji Hayakawa , Hiroyuki Ban , Jyunichi Nagata
IPC分类号： G05F1/613 , G05F1/40
CPC分类号： H02M3/158 , H02M2001/0045 , H02M2001/0048 , H02M2001/007 , Y02B70/1491
摘要： In a power supply apparatus, a switching circuit selectively applies one of an input voltage of a power converting circuit and an output voltage of the power converting circuit to a voltage reducing power supply circuit. When the input voltage is applied to the power converting circuit, the switching circuit selects this input voltage, so that the output voltage of the voltage reducing power supply circuit can quickly rise. Thereafter, when the output voltage of the power converting circuit exceeds this output voltage, the switching circuit selects the output voltage of the power converting circuit. As a result, a difference between the input voltage and the output voltage of the voltage reducing power supply circuit is decreased. Thus, a power loss is lowered and noise produced in the power converting circuit is suppressed.
摘要翻译：在电源装置中，开关电路将功率转换电路的输入电压和电力转换电路的输出电压中的一个选择性地施加到降压电源电路。当输入电压施加到功率转换电路时，开关电路选择该输入电压，使得降压电源电路的输出电压可以快速上升。此后，当电力转换电路的输出电压超过该输出电压时，开关电路选择电力转换电路的输出电压。结果，降压电源电路的输入电压和输出电压之间的差减小。因此，功率损耗降低，功率转换电路产生的噪声被抑制。

18. 发明授权

US06982496B2 Semiconductor device having bump electrode and support area 失效
标题翻译：具有凸起电极和支撑区域的半导体器件
公开(公告)号：US06982496B2
公开(公告)日：2006-01-03
申请号：US10425664
申请日：2003-04-30
申请人： Hirofumi Abe , Hiroyuki Ban
发明人： Hirofumi Abe , Hiroyuki Ban
IPC分类号： H01L29/06 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/544
CPC分类号： H01L23/562 , H01L24/10 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05569 , H01L2224/05571 , H01L2224/14 , H01L2924/01078
摘要： A semiconductor device includes a substrate, a plurality of bump electrodes disposed on the substrate, and a support area for supporting the substrate in case of carrying the substrate. The support area is disposed on a surface of the substrate, on which the bump electrode is disposed, and is disposed at a predetermined position, which is dotted on the surface of the substrate. In this device, the support area is sufficiently small, and the number of the bump electrodes can increase. Moreover, degree of freedom in a configuration of the support area increases.
摘要翻译：半导体器件包括衬底，设置在衬底上的多个凸块电极，以及用于在承载衬底的情况下支撑衬底的支撑区域。支撑区域设置在其上设置有凸起电极的基板的表面上，并且被布置在点状在基板的表面上的预定位置处。在该装置中，支撑区域足够小，并且凸起电极的数量可以增加。此外，支撑区域的配置的自由度增加。

19. 发明授权

US06972973B2 Voltage booster having noise reducing structure 失效
标题翻译：具有降噪结构的电压升压器
公开(公告)号：US06972973B2
公开(公告)日：2005-12-06
申请号：US10716560
申请日：2003-11-20
申请人： Hirofumi Abe , Hirokazu Itakura , Hiroyuki Ban , Shoichi Okuda , Kingo Ota
发明人： Hirofumi Abe , Hirokazu Itakura , Hiroyuki Ban , Shoichi Okuda , Kingo Ota
IPC分类号： H02M3/07 , H02M3/18 , G05F3/08
CPC分类号： H02M3/18 , H02M3/073
摘要： In a voltage booster, a voltage detection circuit detects a battery voltage as an input voltage. If the input voltage is lower than a threshold level, an oscillation circuit outputs a gate signal having a relatively high frequency to increase the driving performance of a driving circuit. If the input voltage is higher than the threshold level, the frequency of the gate signal is lowered so as to prevent the driving performance of the driving circuit from rising to an excessively high value. As a result, a predetermined boosted voltage can be obtained regardless of variations in input voltage without using a filter for eliminating noise.
摘要翻译：在升压器中，电压检测电路检测电池电压作为输入电压。如果输入电压低于阈值电平，则振荡电路输出具有较高频率的门信号，以提高驱动电路的驱动性能。如果输入电压高于阈值电平，则门信号的频率降低，以防止驱动电路的驱动性能上升到过高的值。结果，无需使用用于消除噪声的滤波器，就可以获得预定的升压电压而不管输入电压的变化。

20. 发明授权

US06831331B2 Power MOS transistor for absorbing surge current 失效
标题翻译：功率MOS晶体管，用于吸收浪涌电流
公开(公告)号：US06831331B2
公开(公告)日：2004-12-14
申请号：US09945621
申请日：2001-09-05
申请人： Yasuhiro Kitamura , Toshio Sakakibara , Kenji Kohno , Shoji Mizuno , Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
发明人： Yasuhiro Kitamura , Toshio Sakakibara , Kenji Kohno , Shoji Mizuno , Yoshiaki Nakayama , Hiroshi Maeda , Makio Iida , Hiroshi Fujimoto , Mitsuhiro Saitou , Hiroshi Imai , Hiroyuki Ban
IPC分类号： H01L2976
CPC分类号： H01L29/7816 , H01L21/8249 , H01L27/0251 , H01L27/0623 , H01L27/085 , H01L29/1087 , H01L29/66674 , H01L29/7395 , H01L29/7801 , H01L29/7824 , H01L29/7835
摘要： A semiconductor device is provided having a power transistor structure. The power transistor structure includes a plurality of first wells disposed independently at a surface portion of a semiconductor layer; a deep region having a portion disposed in the semiconductor layer between the first wells; a drain electrode connected to respective drain regions in the first wells; a source electrode connected to respective source regions and channel well regions in the first wells, such that either the drain electrode or the source electrode is connected to an inductive load; and a connecting member for supplying the deep region with a source potential, where the connecting member is configurable to connect to the drain electrode when the drain electrode is connected to the inductive load and to connect to the source electrode when the source electrode is connected to said inductive load.
摘要翻译：提供具有功率晶体管结构的半导体器件。功率晶体管结构包括独立地设置在半导体层的表面部分处的多个第一阱; 深部区域，其具有设置在所述第一阱之间的所述半导体层中的部分; 漏电极，连接到所述第一阱中的相应的漏极区; 源电极，其连接到第一阱中的各个源极区域和沟道阱区域，使得漏极电极或源极电极连接到感性负载; 以及连接构件，用于向深区域提供源极电位，其中当漏电极连接到感性负载时，连接构件可配置为连接到漏电极，并且当源电极连接到源电极时连接到源电极表示感性负载。

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