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    • 11. 发明授权
    • Test signal generating circuit of a semiconductor device with pins receiving signals of multiple voltage levels and method for invoking test modes
    • 具有接收多电压电平信号的引脚的半导体器件的测试信号发生电路和用于调用测试模式的方法
    • US06658612B1
    • 2003-12-02
    • US09550944
    • 2000-04-17
    • Cheol-Hong ParkSang-Seok KangJong-Hyun Choi
    • Cheol-Hong ParkSang-Seok KangJong-Hyun Choi
    • G01R3128
    • G11C29/46G01R31/31813G11C2029/5004
    • A signal generating circuit of a semiconductor device comprises n input test pins for receiving respective coded input signals. At least one of the input signals is coded in more than two possible levels, such as 3 levels or four levels. The device also includes an indicator I/O signal generators, each coupled respectively with an associated input test pin. Each indicator signal generator generates two-level indicator signals in response to the coded input signal received by its associated input test pin. A decoder receives the indicator signals to produce decoded signals, and a mode selecting circuit generates mode selecting signals with the decoded signals responsive to mode setting signals. Each indicator signal generators outputs a regular signal when the input test signal is an ordinary low, a control signal when the input test signal is an ordinary high, and a higher first level signal when the input test signal is a super high. If more than three levels are used, the indicator signal generator further generates corresponding signals for these higher values.
    • 半导体器件的信号发生电路包括用于接收各个编码输入信号的n个输入测试引脚。 输入信号中的至少一个以多于两个可能的级别编码,例如3级或4级。 该装置还包括一个指示器I / O信号发生器,每个发生器分别与相关的输入测试引脚相连。 每个指示信号发生器响应于由其相关输入测试引脚接收到的编码输入信号产生两电平指示信号。 解码器接收指示信号以产生解码信号,并且模式选择电路响应于模式设置信号产生具有解码信号的模式选择信号。 当输入测试信号为普通低电平时,指示信号发生器输出常规信号,当输入测试信号为普通高电平时输入控制信号,当输入测试信号为超高电平时,输出高电平信号。 如果使用三个以上的电平,指示信号发生器进一步产生这些较高值的相应信号。
    • 14. 发明授权
    • Semiconductor memory device and method of repairing same
    • 半导体存储器件及其修复方法
    • US06438047B1
    • 2002-08-20
    • US09908192
    • 2001-07-18
    • Yun-Sang LeeJong-Hyun ChoiSang-Suk KangKyu-Nam Lim
    • Yun-Sang LeeJong-Hyun ChoiSang-Suk KangKyu-Nam Lim
    • G11C700
    • G11C29/846
    • A semiconductor memory device comprises a memory cell array, at least one redundant cell control, a sense amplifier, and at least one redundant cell. The memory cell array receives and outputs data through data I/O line groups. The redundant cell control stores a defective cell address, generates a redundant cell enable control signal when the defective cell address is equal to an input cell address, generates a redundant cell read control signal during a read operation in response to the redundant cell enable control signal, and generates a redundant cell write control signal during a write operation in response to the redundant cell enable control signal. The sense amplifier is connected to an I/O line group commonly connected to the data I/O line groups, amplifies and outputs data outputted from the memory cell array during the read operation, and is disabled in response to the redundant cell read control signal. The redundant cell stores input data transferred to the I/O line group in response to the redundant cell write control signal and outputs stored data in response to the redundant cell read control signal.
    • 半导体存储器件包括存储单元阵列,至少一个冗余单元控制,读出放大器和至少一个冗余单元。 存储单元阵列通过数据I / O线组接收和输出数据。 冗余单元控制存储故障单元地址,当缺陷单元地址等于输入单元地址时产生冗余单元使能控制信号,在读操作期间响应冗余单元使能控制信号产生冗余单元读控制信号 并且响应于冗余单元使能控制信号在写操作期间产生冗余单元写入控制信号。 感测放大器连接到通常连接到数据I / O线组的I / O线组,在读操作期间放大并输出从存储单元阵列输出的数据,并响应于冗余单元读取控制信号而被禁止 。 冗余单元响应于冗余单元写入控制信号存储传送到I / O线组的输入数据,并根据冗余单元读取控制信号输出存储的数据。
    • 16. 发明授权
    • Organic light emitting display apparatus and method of manufacturing the same
    • 有机发光显示装置及其制造方法
    • US08575609B2
    • 2013-11-05
    • US13200826
    • 2011-10-03
    • Jong-Hyun Choi
    • Jong-Hyun Choi
    • H01L29/04
    • H01L27/3265H01L27/3258
    • An organic light emitting display apparatus includes a substrate, a thin film transistor formed on the substrate and comprising an active layer, a gate electrode, a source electrode, and a drain electrode, a first gate insulation layer arranged between the gate electrode and the active layer and including an opening portion, a first electrode arranged between the substrate and the first gate insulation layer to overlap the opening portion, an intermediate layer formed on the first electrode and including an organic light emitting layer, a second electrode formed on the intermediate layer, and a capacitor including a first capacitor electrode that is arranged between the substrate and the first gate insulation layer and a second capacitor electrode that is arranged on an upper surface of the first gate insulation layer.
    • 一种有机发光显示装置,包括:基板,形成在基板上的薄膜晶体管,具有有源层,栅电极,源电极和漏电极,配置在栅电极和活性层之间的第一栅极绝缘层 并且包括开口部分,布置在所述基板和所述第一栅极绝缘层之间以与所述开口部分重叠的第一电极,形成在所述第一电极上并包括有机发光层的中间层,形成在所述中间层上的第二电极 以及电容器,其包括布置在所述基板和所述第一栅极绝缘层之间的第一电容器电极和布置在所述第一栅极绝缘层的上表面上的第二电容器电极。
    • 17. 发明申请
    • ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 有机发光显示装置及其制造方法
    • US20130288413A1
    • 2013-10-31
    • US13928120
    • 2013-06-26
    • Jong-Hyun ChoiJong-Yun KimJin-Goo KangDae-Hyun Noh
    • Jong-Hyun ChoiJong-Yun KimJin-Goo KangDae-Hyun Noh
    • H01L51/56
    • H01L51/56H01L27/3246
    • An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer.
    • 一种有机发光显示装置,包括:基板; 在所述基板上形成的至少一个薄膜晶体管(TFT); 覆盖TFT的平坦化层; 像素电极,其形成在平坦化层上并连接到TFT; 围绕像素电极的边缘的保护层; 具有比保护层的顶表面突出的突出(OH)结构的像素限定层(PDL)覆盖保护层和像素电极的边缘,并且暴露由像素电极包围的像素电极的一部分 保护层; 面对像素电极的对置电极; 以及中间层,其介于像素电极和对电极之间,并且包括发光层和至少一个有机层,其中中间层的厚度大于保护层的厚度。
    • 19. 发明授权
    • Organic light emitting diode display and method of manufacturing the same
    • 有机发光二极管显示器及其制造方法
    • US08455876B2
    • 2013-06-04
    • US12805702
    • 2010-08-16
    • Jong-Hyun ChoiJune-Woo LeeKwang-Hae KimKyoung-Bo Kim
    • Jong-Hyun ChoiJune-Woo LeeKwang-Hae KimKyoung-Bo Kim
    • H01L33/16H01L29/786
    • H01L27/1251H01L27/1225H01L27/3262
    • An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer.
    • 一种OLED显示器,包括:基板主体; 第一栅电极和第二半导体层; 在第一栅电极和第二半导体层上的栅极绝缘层; 分别覆盖所述第一栅电极和所述第二半导体层的第一半导体层和第二栅电极; 蚀刻阻挡层接触第一半导体层的部分; 在所述第一半导体层和所述第二栅电极上的层间绝缘层,并且包括分别暴露所述多个蚀刻停止层的接触孔; 层间绝缘层上的第一源电极和第一漏电极,并且所述接触孔经由所述蚀刻停止层间接地连接到所述第一半导体层,或者直接连接到所述第一半导体层; 并且所述层间绝缘层上的第二源极和第二漏极连接到所述第二半导体层。