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    • 19. 发明申请
    • ELECTRON EMISSION DEVICE
    • 电子发射装置
    • US20090045716A1
    • 2009-02-19
    • US12134968
    • 2008-06-06
    • Sam-Il HanSang-Hyuck AhnSang-Jo LeeJin-Hui ChoSang-Ho JeonSu-Bong Hong
    • Sam-Il HanSang-Hyuck AhnSang-Jo LeeJin-Hui ChoSang-Ho JeonSu-Bong Hong
    • H01J1/00
    • H01J29/467H01J9/148H01J31/127
    • An electron emission device includes i) a substrate, ii) a cathode electrode on the substrate, having a first opening, and comprising an ultraviolet non-transmitting material, iii) an electron emission region in the first opening and for emitting electrons, and iv) a gate electrode electrically insulated from the cathode electrode and having a second opening through which the electrons emitted from the electron emission region pass. The ultraviolet transmittance of the gate electrode is about 30% or more. A distance between a first imaginary line passing through a center of the electron emission region and normal to a plane surface of the substrate, and a second imaginary line passing through a center of the second opening and normal to the plane surface of the substrate is about 0.5 μm or less.
    • 一种电子发射装置,包括i)基板,ii)基板上的阴极,具有第一开口,并且包括紫外线不透光材料,iii)第一开口中的电子发射区域,用于发射电子,iv )与所述阴极电极绝缘并且具有第二开口的电极,所述第二开口从所述电子发射区发射出的电子通过。 栅电极的紫外线透射率为约30%以上。 穿过电子发射区域的中心并垂直于衬底的平面的第一假想线与通过第二开口的中心并垂直于衬底平面的第二假想线之间的距离约为 0.5 mum以下。