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11. 发明授权

US08115207B2 Vacuum channel transistor and diode emitting thermal cathode electrons, and method of manufacturing the vacuum channel transistor 有权
标题翻译：真空通道晶体管和二极管发射热阴极电子，以及制造真空通道晶体管的方法
公开(公告)号：US08115207B2
公开(公告)日：2012-02-14
申请号：US12606317
申请日：2009-10-27
申请人： Dae Yong Kim , Hyun Tak Kim
发明人： Dae Yong Kim , Hyun Tak Kim
IPC分类号： H01L29/76
CPC分类号： H01J21/10
摘要： Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.
摘要翻译：提供了晶体管和制造晶体管的方法，更具体地，是发射热阴极电子的真空沟道晶体管和制造真空沟道晶体管的方法。真空通道晶体管包括：主板; 具有形成在母板上的薄膜结构的微加热器构件; 阴极构件，其具有薄膜结构，所述薄膜结构与所述微加热器构件的中心部分间隔开并形成在所述微加热器构件上; 形成在所述阴极部件的上部的两个外壁上的闸板部件; 以及阳极部件，其间隔设置在所述栅极部件上的间隔隔开所述阴极部件的第二间隔，其中，所述阴极部件与所述阳极部件之间以第二间隔插入真空电子通过区域。

12. 发明授权

US07929308B2 Power device package having enhanced heat dissipation 有权
标题翻译：功率器件封装具有增强的散热
公开(公告)号：US07929308B2
公开(公告)日：2011-04-19
申请号：US12535969
申请日：2009-08-05
申请人： Sang Kuk Choi , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim
发明人： Sang Kuk Choi , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim
IPC分类号： H05K7/20 , H01L21/335
CPC分类号： H05K1/0201 , H01L2224/48091 , H05K1/181 , H05K2201/10053 , H05K2201/10166 , H05K2201/10522 , H01L2924/00014
摘要： A power device package controls heat generation of a power device using a semi-permanent metal-insulator transition (MIT) device instead of a fuse, and emits heat generated by the power device through a small-sized heat sink provided only in one region on the power device, thereby ensuring excellent dissipation of heat. Therefore, the power device package can be usefully applied to any electric/electronic circuit that uses a power device.
摘要翻译：功率器件封装使用半永久性金属 - 绝缘体转换（MIT）装置代替保险丝来控制功率器件的发热，并通过仅在一个区域上提供的小型散热器发射由功率器件产生的热量功率器件，从而确保良好的散热。因此，功率器件封装可以有效地应用于使用功率器件的任何电/电子电路。

13. 发明申请

US20100180941A1 ANTIREFLECTION FILM OF SOLAR CELL, SOLAR CELL, AND METHOD OF MANUFACTURING SOLAR CELL 审中-公开
标题翻译：太阳能电池，太阳能电池的抗反射膜及制造太阳能电池的方法
公开(公告)号：US20100180941A1
公开(公告)日：2010-07-22
申请号：US12506187
申请日：2009-07-20
申请人： JungWook Lim , Sun Jin Yun , Hyun Tak Kim
发明人： JungWook Lim , Sun Jin Yun , Hyun Tak Kim
IPC分类号： H01L31/0232 , H01L31/00 , H01L31/18
CPC分类号： G02B1/115 , H01L31/02168 , Y02E10/52
摘要： Provided are an antireflection film of a solar cell, the solar cell, and a method of manufacturing the solar cell. The antireflection film of a solar cell includes a low dielectric film formed of a material having a first dielectric constant; a high dielectric film formed of a material having a second dielectric constant higher than the first dielectric constant; and a gradient layer disposed between the low dielectric film and the high dielectric film, and formed so as to gradually increase a dielectric constant from the first dielectric constant to the second dielectric constant. According to the present invention, light absorption efficiency of a solar cell can be increased.
摘要翻译：提供太阳能电池的防反射膜，太阳能电池以及制造太阳能电池的方法。太阳能电池的防反射膜包括由具有第一介电常数的材料形成的低电介质膜; 由具有高于第一介电常数的第二介电常数的材料形成的高电介质膜; 以及设置在低电介质膜和高电介质膜之间的梯度层，并且形成为使介电常数从第一介电常数逐渐增大到第二介电常数。根据本发明，能够提高太阳能电池的光吸收效率。

14. 发明申请

US20100102325A1 VACUUM CHANNEL TRANSISTOR AND DIODE EMITTING THERMAL CATHODE ELECTRONS, AND METHOD OF MANUFACTURING THE VACUUM CHANNEL TRANSISTOR 有权
标题翻译：真空通道晶体管和二极管发射热阴极电子，以及制造真空通道晶体管的方法
公开(公告)号：US20100102325A1
公开(公告)日：2010-04-29
申请号：US12606317
申请日：2009-10-27
申请人： Dae Yong KIM , Hyun Tak Kim
发明人： Dae Yong KIM , Hyun Tak Kim
IPC分类号： H01L29/78 , H01L29/04 , H01L21/336
CPC分类号： H01J21/10
摘要： Provided are a transistor and a method of manufacturing the transistor, and more particularly, a vacuum channel transistor emitting thermal cathode electrons and a method of manufacturing the vacuum channel transistor. The vacuum channel transistor includes: a motherboard; a micro heater member having a thin-film structure formed on the motherboard; a cathode member having a thin-film structure spaced apart from a center part of the micro heater member by a first interval and formed on the micro heater member; a gate member formed on both outer walls of upper parts of the cathode member; and an anode member spaced apart from the cathode member by a second interval through spacers disposed on the gate member, wherein a vacuum electron passing area is interposed between the cathode member and the anode member by the second interval.
摘要翻译：提供了晶体管和制造晶体管的方法，更具体地，是发射热阴极电子的真空沟道晶体管和制造真空沟道晶体管的方法。真空通道晶体管包括：主板; 具有形成在母板上的薄膜结构的微加热器构件; 阴极构件，其具有薄膜结构，所述薄膜结构与所述微加热器构件的中心部分间隔开并形成在所述微加热器构件上; 形成在所述阴极部件的上部的两个外壁上的闸板部件; 以及阳极部件，其间隔设置在所述栅极部件上的间隔隔开所述阴极部件的第二间隔，其中，所述阴极部件与所述阳极部件之间以第二间隔插入真空电子通过区域。

15. 发明授权

US08159119B2 Vacuum channel transistor and manufacturing method thereof 失效
标题翻译：真空通道晶体管及其制造方法
公开(公告)号：US08159119B2
公开(公告)日：2012-04-17
申请号：US12241182
申请日：2008-09-30
申请人： Dae Yong Kim , Hyun Tak Kim
发明人： Dae Yong Kim , Hyun Tak Kim
IPC分类号： H01J63/04
CPC分类号： H01J21/10
摘要： Disclosed are a vacuum channel transistor including a planar cathode layer formed of a material having a low work function or a planar cathode layer including a heat resistant layer formed of a material having a low work function, and a manufacturing method of the same. In the vacuum channel transistor, electrons can be emitted even when a low voltage is applied to a gate layer, a voltage of an anode layer has a small influence on electron emission of a cathode layer, and instability of emission current is obviated. Accordingly, high efficiency and a long lifespan can be achieved, and thus operational stability is secured.
摘要翻译：公开了一种真空沟道晶体管及其制造方法，该真空沟道晶体管包括由具有低功函数的材料形成的平面阴极层或包括由具有低功函数的材料形成的耐热层的平面阴极层。在真空通道晶体管中，即使当向栅极层施加低电压时，也可以发射电子，阳极层的电压对阴极层的电子发射影响较小，并且消除了发射电流的不稳定性。因此，可以实现高效率和长寿命，从而确保操作稳定性。

16. 发明授权

US07951765B2 Photoresist stripper composition for semiconductor manufacturing 有权
标题翻译：用于半导体制造的光刻胶剥离剂组合物
公开(公告)号：US07951765B2
公开(公告)日：2011-05-31
申请号：US12063745
申请日：2006-08-05
申请人： Hyun Tak Kim , Seong Hwan Park , Jung Hun Lim , Sung Bae Kim , Chan Jin Jeong , Kui Jong Baek
发明人： Hyun Tak Kim , Seong Hwan Park , Jung Hun Lim , Sung Bae Kim , Chan Jin Jeong , Kui Jong Baek
IPC分类号： C11D7/50
CPC分类号： G03F7/425 , G03F7/426
摘要： The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.
摘要翻译：本发明涉及在半导体器件的制造过程中去除光致抗蚀剂的光致抗蚀剂剥离剂组合物。更具体地，光致抗蚀剂剥离剂组合物包含3-20重量％的水合肼或胺化合物; 20〜40重量％的极性溶剂; 0.01-3重量％的选自咪唑啉衍生物，硫化物衍生物，亚砜衍生物，芳族化合物或具有羟基的芳族化合物组成的组中的腐蚀抑制剂; 0.01-5重量％的C2-C10的一元醇化合物; 和40-70重量％的去离子水。用于制造半导体的光致抗蚀剂剥离剂组合物可以通过硬烘烤，干蚀刻，灰化或离子注入去除光致抗蚀剂膜热固性，并且在低温下容易且快速地在所述工艺中从底部金属膜蚀刻的金属副产物变性，在光致抗蚀剂的去除过程中最小化底部金属布线的腐蚀。

17. 发明申请

US20110018607A1 METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE 有权
标题翻译：使用金属绝缘体过渡器件控制晶体管辐射热的方法和电路
公开(公告)号：US20110018607A1
公开(公告)日：2011-01-27
申请号：US12742430
申请日：2008-11-11
申请人： Hyun Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sun-jin Yun
发明人： Hyun Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sun-jin Yun
IPC分类号： H03K17/60
CPC分类号： H01L25/16 , H01L23/62 , H01L2924/0002 , H02H3/085 , H02H5/047 , H01L2924/00
摘要： Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.
摘要翻译：提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来阻止功率晶体管的发热来保护，并且可以半永久使用。用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热晶体管。

18. 发明申请

US20090312216A1 Photoresist Stripper Composition for Semiconductor Manufacturing 有权
标题翻译：半导体制造用光阻剥离剂组合物
公开(公告)号：US20090312216A1
公开(公告)日：2009-12-17
申请号：US12063745
申请日：2006-08-05
申请人： Hyun Tak Kim , Seong Hwan Park , Jung Hun Lim , Sung Bae Kim , Chan Jin Jeong , Kui Jong Baek , Woong Hahn , Sang Won Lee , Gun-Woong Lee
发明人： Hyun Tak Kim , Seong Hwan Park , Jung Hun Lim , Sung Bae Kim , Chan Jin Jeong , Kui Jong Baek , Woong Hahn , Sang Won Lee , Gun-Woong Lee
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , G03F7/426
摘要： The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.
摘要翻译：本发明涉及在半导体器件的制造过程中去除光致抗蚀剂的光致抗蚀剂剥离剂组合物。更具体地，光刻胶剥离剂组合物包含3-20重量％的水合肼或胺化合物; 20〜40wt％极性溶剂; 0.01-3重量％的选自咪唑啉衍生物，硫化物衍生物，亚砜衍生物，芳族化合物或具有羟基的芳族化合物组成的组中的腐蚀抑制剂; 0.01-5重量％的C2-C10的一元醇化合物; 和40-70重量％的去离子水。用于制造半导体的光致抗蚀剂剥离剂组合物可以通过硬烘烤，干蚀刻，灰化或离子注入去除光致抗蚀剂膜热固性，并且在低温下容易且快速地在所述工艺中从底部金属膜蚀刻的金属副产物变性，在光致抗蚀剂的去除过程中最小化底部金属布线的腐蚀。

19. 发明申请

US20090011145A1 Method of Manufacturing Vanadium Oxide Thin Film 审中-公开
标题翻译：制造氧化钒薄膜的方法
公开(公告)号：US20090011145A1
公开(公告)日：2009-01-08
申请号：US12064807
申请日：2006-08-23
申请人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
发明人： Sun-Jin Yun , Jung Wook Lim , Hyun Tak Kim , Byung Gyu Chae , Bong Jun Kim , Kwang Yong Kang
IPC分类号： C23C16/513 , C23C16/00
CPC分类号： C23C16/405 , C23C16/45542 , C23C16/45553 , C23C16/50
摘要： Provided is a method of manufacturing a large-sized vanadium oxide thin film having a uniform surface, uniform film thickness and stable composition. According to the method, a vanadium-organometallic compound gas is injected into a chamber to form adsorption layer where molecules of the vanadium-organometallic compound are adsorbed on the surface of a substrate. After that, an oxygen precursor is injected into the chamber and thus allowed to accomplish surface-saturation reaction with the adsorbed materials to fabricate a vanadium oxide thin film.
摘要翻译：提供一种具有均匀的表面，均匀的膜厚度和稳定的组成的大型氧化钒薄膜的制造方法。根据该方法，将钒有机金属化合物气体注入室内以形成其中有机金属化合物分子被吸附在基材表面上的吸附层。之后，向室内注入氧前体，由此与吸附材料进行表面饱和反应，制作氧化钒薄膜。

20. 发明授权

US08502478B2 Variable gate field-effect transistor and electrical and electronic apparatus including the same 有权
公开(公告)号：US08502478B2
公开(公告)日：2013-08-06
申请号：US13089244
申请日：2011-04-18
申请人： Hyun Tak Kim , Bong Jun Kim
发明人： Hyun Tak Kim , Bong Jun Kim
IPC分类号： H05B37/02 , H01L21/8222 , H01L35/00
CPC分类号： H01L27/0629 , H01L25/16 , H01L27/0248 , H01L49/003 , H01L2924/0002 , H03K17/145 , H01L2924/00
摘要： Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

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