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11. 发明申请

US20060111580A1 Methods for the synthesis of chiral dihydroxy ketone intermediates useful for the chiral synthesis of carotenoids 审中-公开
标题翻译：用于手性合成类胡萝卜素的手性二羟基酮中间体的合成方法
公开(公告)号：US20060111580A1
公开(公告)日：2006-05-25
申请号：US11242627
申请日：2005-10-03
申请人： Samuel Lockwood , Peng Tang , Geoff Nadolski , Henry Jackson , Zhiqiang Fang , Yishu Du , Min Yang , William Geiss , Richard Williams , David Burdick
发明人： Samuel Lockwood , Peng Tang , Geoff Nadolski , Henry Jackson , Zhiqiang Fang , Yishu Du , Min Yang , William Geiss , Richard Williams , David Burdick
IPC分类号： C07F7/04 , C07C45/00
CPC分类号： C07C403/24 , C07B2200/07 , C07B2200/09 , C07C29/143 , C07C45/298 , C07C45/511 , C07C45/61 , C07C45/64 , C07C45/673 , C07C45/70 , C07C45/71 , C07C47/21 , C07C49/713 , C07C49/753 , C07C403/08 , C07C2601/16 , C07D319/06 , C07F7/188 , C07F7/1892 , C07F9/113 , C07F9/5442 , C12P23/00 , C07C49/603 , C07C33/02 , C07C35/08 , C07C35/21
摘要： A method used for synthesizing intermediates for use in the synthesis of carotenoids and carotenoid analogs, and/or carotenoid derivatives. In some embodiments, the invention includes methods for synthesizing optically active intermediates useful for the synthesis of optically active carotenoids. Synthesis of optically active carotenoids, in one embodiment, may be accomplished by forming an optically active dihydroxy ketone intermediate from ketoisopherone.
摘要翻译：用于合成用于合成类胡萝卜素和类胡萝卜素类似物的中间体和/或类胡萝卜素衍生物的方法。在一些实施方案中，本发明包括用于合成可用于合成光学活性类胡萝卜素的光学活性中间体的方法。在一个实施方案中，光学活性类胡萝卜素的合成可以通过从酮酮中形成光学活性的二羟基酮中间体来完成。

12. 发明申请

US20060088905A1 Methods for the synthesis of zeazanthin 审中-公开
标题翻译：合成玉米黄质的方法
公开(公告)号：US20060088905A1
公开(公告)日：2006-04-27
申请号：US11242639
申请日：2005-10-03
申请人： Samuel Lockwood , Peng Tang , Geoff Nadolski , Henry Jackson , Zhiqiang Fang , Yishu Du , Min Yang , William Geiss , Richard Williams , David Burdick
发明人： Samuel Lockwood , Peng Tang , Geoff Nadolski , Henry Jackson , Zhiqiang Fang , Yishu Du , Min Yang , William Geiss , Richard Williams , David Burdick
IPC分类号： C12P23/00 , C07C45/45
CPC分类号： C07C403/24 , C07B2200/07 , C07B2200/09 , C07C29/143 , C07C45/298 , C07C45/511 , C07C45/61 , C07C45/64 , C07C45/673 , C07C45/70 , C07C45/71 , C07C47/21 , C07C49/713 , C07C49/753 , C07C403/08 , C07C2601/16 , C07D319/06 , C07F7/188 , C07F7/1892 , C07F9/113 , C07F9/5442 , C12P23/00 , C07C49/603 , C07C33/02 , C07C35/08 , C07C35/21
摘要： A method used for synthesizing intermediates for use in the synthesis of carotenoids and carotenoid analogs, and/or carotenoid derivatives. In some embodiments, the invention includes methods for synthesizing optically active intermediates useful for the synthesis of optically active carotenoids. Synthesis of optically active carotenoids, in one embodiment, may be accomplished by forming an optically active dihydroxy intermediate from ketoisopherone. The optically active dihydroxy intermediate may be converted into optically active zeaxanthin.
摘要翻译：用于合成用于合成类胡萝卜素和类胡萝卜素类似物的中间体和/或类胡萝卜素衍生物的方法。在一些实施方案中，本发明包括用于合成可用于合成光学活性类胡萝卜素的光学活性中间体的方法。在一个实施方案中，光学活性类胡萝卜素的合成可以通过从酮糖酮形成光学活性的二羟基中间体来完成。光学活性的二羟基中间体可以转化成光学活性的玉米黄质。

13. 发明授权

US09355887B2 Dual trench isolation for CMOS with hybrid orientations 有权
标题翻译：具有混合取向的CMOS的双沟槽隔离
公开(公告)号：US09355887B2
公开(公告)日：2016-05-31
申请号：US13349203
申请日：2012-01-12
申请人： Victor Chan , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Chun-yung Sung , Min Yang
发明人： Victor Chan , Meikei Ieong , Rajesh Rengarajan , Alexander Reznicek , Chun-yung Sung , Min Yang
IPC分类号： H01L21/70 , H01L21/762
CPC分类号： H01L21/76229
摘要： The present invention provides a semiconductor structure in which different types of devices are located upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. In the semiconductor structure of the present invention, a dual trench isolation scheme is employed whereby a first trench isolation region of a first depth isolates devices of different polarity from each other, while second trench isolation regions of a second depth, which is shallower than the first depth, are used to isolate devices of the same polarity from each other. The present invention further provides a dual trench semiconductor structure in which pFETs are located on a (110) crystallographic plane, while nFETs are located on a (100) crystallographic plane. In accordance with the present invention, the devices of different polarity, i.e., nFETs and pFETs, are bulk-like devices.
摘要翻译：本发明提供了一种半导体结构，其中不同类型的器件位于混合衬底的特定晶体取向上，这增强了每种器件的性能。在本发明的半导体结构中，采用双沟槽隔离方案，由此第一深度的第一沟槽隔离区将彼此不同极性的器件隔离，而第二深度的第二沟槽隔离区比第第一深度用于隔离相同极性的设备。本发明还提供一种双沟槽半导体结构，其中pFET位于（110）结晶平面上，而nFET位于（100）晶面上。根据本发明，不同极性的器件，即nFET和pFETs是大块状器件。

14. 发明授权

US09048261B2 Fabrication of field-effect transistors with atomic layer doping 有权
标题翻译：用原子层掺杂制造场效晶体管
公开(公告)号：US09048261B2
公开(公告)日：2015-06-02
申请号：US13198255
申请日：2011-08-04
申请人： Kevin K. Chan , Young-Hee Kim , Isaac Lauer , Ramachandran Muralidhar , Dae-Gyu Park , Xinhui Wang , Min Yang
发明人： Kevin K. Chan , Young-Hee Kim , Isaac Lauer , Ramachandran Muralidhar , Dae-Gyu Park , Xinhui Wang , Min Yang
IPC分类号： H01L21/44 , H01L21/441 , H01L29/66 , H01L21/225 , H01L29/78 , H01L29/165
CPC分类号： H01L21/31 , H01L21/0228 , H01L21/2254 , H01L29/165 , H01L29/365 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/66803 , H01L29/7833 , H01L29/7848 , H01L29/785
摘要： Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.
摘要翻译：公开了使用原子层掺杂工艺制造的场效应晶体管。根据原子层掺杂方法的实施方案，制备半导体表面和掺杂剂气体混合物。此外，通过在小于500托的压力和300℃至750℃的温度下将掺杂剂气体混合物施加到半导体表面，在半导体表面上生长掺杂剂层。掺杂剂层包括在与半导体表面上的原子反应的每立方厘米的最小4×10 20有源掺杂剂原子使得反应的原子增加了半导体表面的导电性。

15. 发明申请

US20150099744A1 COMBINATIONS OF HISTONE DEACETYLASE INHIBITORS AND EITHER HER2 INHIBITORS OR PI3K INHIBITORS 有权
标题翻译：组合脱乙酰壳多糖酶抑制剂和HER2抑制剂或PI3K抑制剂的组合
公开(公告)号：US20150099744A1
公开(公告)日：2015-04-09
申请号：US14506889
申请日：2014-10-06
申请人： David Lee Tamang , Min Yang , Simon S. Jones
发明人： David Lee Tamang , Min Yang , Simon S. Jones
IPC分类号： C07D239/42 , A61K31/517 , A61K31/5377 , A61K31/505
CPC分类号： A61K31/505 , A61K31/517 , A61K31/519 , A61K31/5377 , A61K45/06 , C07D239/42 , A61K2300/00
摘要： The invention relates to combinations comprising an HDAC inhibitor and a Her2 inhibitor for the treatrent of breast cancer in a subject in need thereof. The invention also relates to combinations comprising an HDAC inhibitor and a PI3K inhibitor for the treatment of breast cancer in a subject in need thereof. Also provided herein are methods for treating breast cancer in a subject in need thereof comprising administering to the subject an effective amount of one of the above combinations. Further provided are methods for inhibiting migration and/or invasion of a breast cancer cell in a subject by administering to the subject a HDAC6 specific inhibitor.
摘要翻译：本发明涉及包含HDAC抑制剂和Her2抑制剂的组合物，用于在有需要的受试者中治疗乳腺癌。本发明还涉及包含HDAC抑制剂和PI3K抑制剂的组合，用于在有需要的受试者中治疗乳腺癌。本文还提供了在有需要的受试者中治疗乳腺癌的方法，其包括向受试者施用有效量的上述组合之一。还提供了通过向受试者施用HDAC6特异性抑制剂来抑制受试者中乳腺癌细胞迁移和/或侵袭的方法。

16. 发明申请

US20130032865A1 FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING 有权
公开(公告)号：US20130032865A1
公开(公告)日：2013-02-07
申请号：US13606873
申请日：2012-09-07
申请人： Kevin K. Chan , Young-Hee Kim , Isaac Lauer , Ramachandran Muralidhar , Dae-Gyu Park , Xinhui Wang , Min Yang
发明人： Kevin K. Chan , Young-Hee Kim , Isaac Lauer , Ramachandran Muralidhar , Dae-Gyu Park , Xinhui Wang , Min Yang
IPC分类号： H01L29/78
CPC分类号： H01L21/31 , H01L21/0228 , H01L21/2254 , H01L29/165 , H01L29/365 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/66803 , H01L29/7833 , H01L29/7848 , H01L29/785
摘要： Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas mixture are prepared. Further, a dopant layer is grown on the semiconducting surface by applying the dopant gas mixture to the semiconducting surface under a pressure that is less than 500 Torr and a temperature that is between 300° C. and 750° C. The dopant layer includes at least 4×1020 active dopant atoms per cm3 that react with atoms on the semiconducting surface such that the reacted atoms increase the conductivity of the semiconducting surface.

17. 发明申请

US20130020594A1 SEMICONDUCTOR TEMPLATE SUBSTRATE, LIGHT-EMITTING ELEMENT USING A SEMICONDUCTOR TEMPLATE SUBSTRATE, AND A PRODUCTION METHOD THEREFOR 失效
标题翻译：半导体基板，使用半导体基板的发光元件及其制造方法
公开(公告)号：US20130020594A1
公开(公告)日：2013-01-24
申请号：US13638165
申请日：2011-03-31
申请人： Hyung-Soo Ahn , Min Yang , Hongju Ha
发明人： Hyung-Soo Ahn , Min Yang , Hongju Ha
IPC分类号： H01L33/08 , H01L21/78 , H01L33/44 , H01L33/02
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/0265 , H01L21/02664 , H01L33/007 , H01L33/12
摘要： A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional area increasing as each of the inverted pyramid structures is more extended in a vertical direction from the second surface.
摘要翻译：发光器件包括半导体层，形成在半导体层的第一表面上的发光堆叠结构以及形成在与第一表面相对的半导体层的第二表面上的多个反金字塔结构。每个倒金字塔结构具有逐渐增加的横截面积，因为每个倒金字塔结构在垂直方向上从第二表面延伸得更多。

18. 发明授权

US08030634B2 Memory array with diode driver and method for fabricating the same 有权
标题翻译：具有二极管驱动器的存储器阵列及其制造方法
公开(公告)号：US08030634B2
公开(公告)日：2011-10-04
申请号：US12060075
申请日：2008-03-31
申请人： Hsiang-Lan Lung , Min Yang , Thomas D. Happ , Bipin Rajendran
发明人： Hsiang-Lan Lung , Min Yang , Thomas D. Happ , Bipin Rajendran
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： H01L27/24
摘要： A memory array with self-centered diode access devices results from a process in which diodes are formed in the fill material, each diode having a lightly-doped first layer of the same conductivity type as the conductive lines; a heavily doped second layer of opposite conductivity type; and a conductive cap. Self-aligned, and self-centered spacers in the self-aligned vias define pores that expose the conductive cap. Memory material is deposited within the pores, the memory material making contact with the conductive cap. A top electrode is formed in contact with the memory material.
摘要翻译：具有自中心二极管接入装置的存储器阵列是由填充材料中形成二极管的过程产生的，每个二极管具有与导电线相同导电类型的轻掺杂第一层; 相反导电类型的重掺杂第二层; 和导电帽。自对准和自对准的自对准通孔中的间隔物限定暴露导电盖的孔。记忆材料沉积在孔内，记忆材料与导电帽接触。形成与记忆材料接触的顶部电极。

19. 发明申请

US20110234732A1 DOT-MATRIX PRINTER 有权
标题翻译： DOT-MATRIX打印机
公开(公告)号：US20110234732A1
公开(公告)日：2011-09-29
申请号：US13123109
申请日：2009-01-22
申请人： Lei Zheng , Jigang Zhang , Qiangzi Cong , Tianxin Jiang , Min Yang
发明人： Lei Zheng , Jigang Zhang , Qiangzi Cong , Tianxin Jiang , Min Yang
IPC分类号： B41J2/01
CPC分类号： B41J15/042
摘要： A dot-matrix printer comprises a main frame, a first movable frame, and a second movable frame, wherein the main frame supports a printer head; the first movable frame supports a platen and a first paper feeding roller, and is pivotally connected to one end of the main frame via a first pivot shaft to permit itself to be opened or closed relative to the main frame; the second movable frame supports a second paper feeding roller, and is pivotally connected to the other end of the main frame via a second pivot shaft to permit itself to be opened or closed relative to the main frame; and wherein when the first movable frame and the second movable frame are closed relative to the main frame, the printer head is opposite to the platen to form a printing position; and the first paper feeding roller is tangent to the second paper feeding roller. The dot-matrix printer according to the present invention has two movable frames. The first paper feeding roller and the second paper feeding roller are provided in these two movable frames, respectively. The above movable frames can rotate about the main frame to be opened, avoiding the inconvenience of replacing the ink ribbon and cleaning the printer head in the prior art.
摘要翻译：点阵式打印机包括主框架，第一可移动框架和第二可移动框架，其中主框架支撑打印头; 第一可移动框架支撑压板和第一送纸辊，并且经由第一枢轴可枢转地连接到主框架的一端，以允许其相对于主框架打开或关闭; 第二可移动框架支撑第二送纸辊，并且经由第二枢转轴可枢转地连接到主框架的另一端，以允许其相对于主框架打开或关闭; 并且其中当所述第一可移动框架和所述第二可移动框架相对于所述主框架闭合时，所述打印头与所述压板相对以形成打印位置; 第一送纸辊与第二送纸辊相切。根据本发明的点阵式打印机具有两个可动框架。这两个可移动框架分别设置有第一供纸辊和第二供纸辊。上述可动框架可围绕主框架旋转以打开，避免了现有技术中更换墨带和清洁打印头的不便。

20. 发明授权

US07791057B2 Memory cell having a buried phase change region and method for fabricating the same 有权
标题翻译：具有埋置相变区的存储单元及其制造方法
公开(公告)号：US07791057B2
公开(公告)日：2010-09-07
申请号：US12107573
申请日：2008-04-22
申请人： Hsiang-Lan Lung , Chung Hon Lam , Min Yang , Alejandro G. Schrott
发明人： Hsiang-Lan Lung , Chung Hon Lam , Min Yang , Alejandro G. Schrott
IPC分类号： H01L29/02
CPC分类号： H01L45/143 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/14 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1641 , H01L45/1666
摘要： Memory cells are described along with methods for manufacturing. A memory cell as described herein includes a bottom electrode comprising a base portion and a pillar portion on the base portion, the pillar portion having a width less than that of the base portion. A dielectric surrounds the bottom electrode and has a top surface. A memory element is overlying the bottom electrode and includes a recess portion extending from the top surface of the dielectric to contact the pillar portion of the bottom electrode, wherein the recess portion of the memory element has a width substantially equal to the width of the pillar portion of the bottom electrode. A top electrode is on the memory element.
摘要翻译：描述存储单元以及制造方法。本文所述的存储单元包括底部电极，其包括基部和基部上的柱部，所述柱部的宽度小于基部的宽度。电介质围绕底部电极并具有顶部表面。存储元件覆盖在底部电极上并且包括从电介质的顶表面延伸以与底部电极的柱部分接触的凹部，其中存储元件的凹部具有基本上等于柱的宽度的宽度部分底部电极。顶部电极位于存储元件上。

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