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11. 发明授权

US07955982B2 Method for smoothing wafer surface and apparatus used therefor 有权
标题翻译：晶圆表面平滑的方法及其使用的装置
公开(公告)号：US07955982B2
公开(公告)日：2011-06-07
申请号：US12161070
申请日：2007-01-17
申请人： Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Sakae Koyata , Kazushige Takaishi
发明人： Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Sakae Koyata , Kazushige Takaishi
IPC分类号： H01L21/311
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/6708
摘要： Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.
摘要翻译：公开了一种通过切割半导体晶锭获得的晶片的至少一侧的表面的平滑化方法。在该方法中，根据晶片表面的突起施加流体，从而减少突起。或者，将流体施加在晶片表面上，从而使晶片的整个表面平滑，同时减少晶片表面中的突起。

12. 发明申请

US20090117749A1 Etching Method of Single Wafer 审中-公开
标题翻译：单晶片蚀刻方法
公开(公告)号：US20090117749A1
公开(公告)日：2009-05-07
申请号：US12259940
申请日：2008-10-28
申请人： Sakae KOYATA , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae KOYATA , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/306
CPC分类号： H01L21/30608 , H01L21/02019 , H01L21/02087 , H01L21/67075 , H01L21/6708
摘要： Local shape collapse of a wafer end portion is suppressed to the minimum level, and a wafer front surface as well as a wafer end portion is uniformly etched while preventing an etchant from flowing to a wafer rear surface.There is provided an etching method of a single wafer which supplies an etchant onto a wafer front surface in a state where a single wafer having flattened front and rear surfaces is held, and etches the wafer front surface and a front surface side end portion by using a centrifugal force generated by horizontally rotating the wafer. According to this method, the etchant is intermittently supplied onto the front surface of the wafer in twice or more, supply of the etchant is stopped after the etchant for one process is supplied, and the etchant for the next process is supplied after the supplied etchant flows off from the end portion of the wafer.
摘要翻译：将晶片端部的局部形状塌陷抑制到最小水平，并且在防止蚀刻剂流入晶片后表面的同时均匀地蚀刻晶片前表面以及晶片端部。提供了在保持具有平坦的前后表面的单个晶片的状态下将蚀刻剂提供到晶片前表面的状态的单晶片的蚀刻方法，并且通过使用晶片前表面和前表面侧端部蚀刻通过水平旋转晶片产生的离心力。根据该方法，蚀刻剂以两次或更多次间歇地供给到晶片的前表面上，在提供一个工艺的蚀刻剂之后停止供应蚀刻剂，并且在所提供的蚀刻剂之后提供用于下一工艺的蚀刻剂从晶片的端部流出。

13. 发明申请

US20070175863A1 Single Wafer Etching Apparatus and Single Wafer Etching Method 失效
标题翻译：单晶片蚀刻设备和单晶片蚀刻方法
公开(公告)号：US20070175863A1
公开(公告)日：2007-08-02
申请号：US11669431
申请日：2007-01-31
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L47/00 , C03C15/00 , B44C1/22 , H01L21/306 , C23F1/00
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.
摘要翻译：本发明的目的是提供一种实现晶片的高平坦度和提高其生产率的单晶片蚀刻装置。在单晶片蚀刻装置中，将从硅单晶锭切片的单个薄片状晶片安装在晶片卡盘上并在其上纺丝，并且用通过离心力供给的蚀刻溶液蚀刻晶片的整个前表面通过旋转晶片11产生。单晶硅晶片蚀刻装置包括能够将蚀刻溶液14从排出口26a，27a排出到晶片11的前表面上的多个供给喷嘴26,27，每个喷嘴移动装置能够独立地移动多个供给喷嘴28,29和蚀刻液供给装置30，用于向多个供给喷嘴中的每一个供给蚀刻液14，并将蚀刻液14从各喷出口排出到晶片11的前表面。

14. 发明申请

US20070087568A1 Apparatus for etching wafer by single-wafer process and single wafer type method for etching wafer 失效
公开(公告)号：US20070087568A1
公开(公告)日：2007-04-19
申请号：US11582880
申请日：2006-10-17
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： C03C15/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/6708 , H01L21/67075 , Y10S134/902
摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

15. 发明授权

US08466071B2 Method for etching single wafer 有权
标题翻译：蚀刻单晶片的方法
公开(公告)号：US08466071B2
公开(公告)日：2013-06-18
申请号：US12162829
申请日：2007-01-24
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/302
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/6708
摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
摘要翻译：本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴，然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

16. 发明授权

US07906438B2 Single wafer etching method 失效
标题翻译：单晶片蚀刻方法
公开(公告)号：US07906438B2
公开(公告)日：2011-03-15
申请号：US11669431
申请日：2007-01-31
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.
摘要翻译：本发明的目的是提供一种实现晶片的高平坦度和提高其生产率的单晶片蚀刻装置。在单晶片蚀刻装置中，将从硅单晶锭切片的单个薄片状晶片安装在晶片卡盘上并在其上纺丝，并且用通过离心力供给的蚀刻溶液蚀刻晶片的整个前表面单晶晶片蚀刻装置包括能够将蚀刻溶液14从排出口26a，27a排出到晶片11的前表面上的多个供给喷嘴26,27，各喷嘴移动装置独立地移动多个供给喷嘴28,29，以及用于将蚀刻液14供给到多个供给喷嘴中的每一个的蚀刻液供给装置30，将蚀刻液14从各喷出口排出到晶片11。

17. 发明授权

US07648890B2 Process for producing silicon wafer 有权
标题翻译：硅晶片生产工艺
公开(公告)号：US07648890B2
公开(公告)日：2010-01-19
申请号：US11504969
申请日：2006-08-15
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid:nitric acid:phosphoric acid is 0.5 to 40%:5 to 50%:5 to 70%, respectively.
摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转，晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

18. 发明申请

US20090004876A1 Method for Etching Single Wafer 有权
标题翻译：蚀刻单晶片的方法
公开(公告)号：US20090004876A1
公开(公告)日：2009-01-01
申请号：US12162829
申请日：2007-01-24
申请人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
发明人： Sakae Koyata , Tomohiro Hashii , Katsuhiko Murayama , Kazushige Takaishi , Takeo Katoh
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/02019 , H01L21/6708
摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
摘要翻译：本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴，然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

19. 发明授权

US08379196B2 Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method 有权
标题翻译：通过使用激光散射法判断半导体晶片是否为缺陷晶片的方法
公开(公告)号：US08379196B2
公开(公告)日：2013-02-19
申请号：US12792148
申请日：2010-06-02
申请人： Eiji Kamiyama , Takashi Nakayama , Takeo Katoh
发明人： Eiji Kamiyama , Takashi Nakayama , Takeo Katoh
IPC分类号： G01N21/00
CPC分类号： G01N21/9501
摘要： A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided.
摘要翻译：对每个晶片的LPD的数量等于或小于预定数量的半导体晶片进行整理，并且根据半导体晶片的雾度图来视觉地判断半导体晶片是否为非缺陷晶片到排序。此外，整理出每个晶片的LPD的数量等于或小于预定数量的半导体晶片。然后，从进行分选的半导体晶片中，将晶片面内的雾度信号的面内标准偏差和面内平均值具有特定关系的半导体晶片整理出来，将该半导体晶片判定为无缺陷晶片。以这种方式，用于判断半导体晶片是否为缺陷晶片或缺陷晶片的方法，可以使得判断更均匀和准确而不依赖于使用a的检查装置之间的S / N比的差异的方法提供激光散射法。

20. 发明申请

US20100309461A1 METHOD FOR JUDGING WHETHER SEMICONDUCTOR WAFER IS NON-DEFECTIVE WAFER BY USING LASER SCATTERING METHOD 有权
标题翻译：通过使用激光散射方法判断半导体波形是非缺陷波形的方法
公开(公告)号：US20100309461A1
公开(公告)日：2010-12-09
申请号：US12792148
申请日：2010-06-02
申请人： Eiji Kamiyama , Takashi Nakayama , Takeo Katoh
发明人： Eiji Kamiyama , Takashi Nakayama , Takeo Katoh
IPC分类号： G01N21/00
CPC分类号： G01N21/9501
摘要： A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided.
摘要翻译：对每个晶片的LPD的数量等于或小于预定数量的半导体晶片进行整理，并且根据半导体晶片的雾度图来视觉地判断半导体晶片是否为非缺陷晶片到排序。此外，整理出每个晶片的LPD的数量等于或小于预定数量的半导体晶片。然后，从进行分选的半导体晶片中，将晶片面内的雾度信号的面内标准偏差和面内平均值具有特定关系的半导体晶片整理出来，将该半导体晶片判定为无缺陷晶片。以这种方式，用于判断半导体晶片是否为缺陷晶片或缺陷晶片的方法，可以使得判断更均匀和准确而不依赖于使用a的检查装置之间的S / N比的差异的方法提供激光散射法。

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