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11. 发明授权

US5940319A Magnetic random access memory and fabricating method thereof 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US5940319A
公开(公告)日：1999-08-17
申请号：US144686
申请日：1998-08-31
申请人： Mark Durlam , Gloria Kerszykowski , Jon Slaughter , Theodore Zhu , Eugene Chen , Saied N. Tehrani , Kelly W. Kyler
发明人： Mark Durlam , Gloria Kerszykowski , Jon Slaughter , Theodore Zhu , Eugene Chen , Saied N. Tehrani , Kelly W. Kyler
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/22 , G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： An improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory elements is provided. The circuitry, for example, transistor (12a) having a gate (17a), a drain (18) and a source (16a) is integrated on a substrate (11) and coupled to a magnetic memory element (43) on the circuitry through a plug conductor (19a) and a conductor line (45). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44). Digit line (29) and bit line (48) are placed under and on top of magnetic memory element (43), respectively, and enabled to access magnetic memory element (43). These lines are enclosed by a high permeability layer (31, 56, 58) excluding a surface facing magnetic memory element (43), which shields and focuses a magnetic field toward magnetic memory element (43).
摘要翻译：提供了一种具有磁存储器元件和用于控制磁存储元件的电路的改进和新颖的MRAM器件。电路，例如具有栅极（17a），漏极（18）和源极（16a）的晶体管（12a）集成在衬底（11）上并且耦合到电路上的磁存储元件（43），通过插头导体（19a）和导线（45）。首先在CMOS工艺之下制造电路，然后制造磁存储元件（43,44）。数字线（29）和位线（48）分别放置在磁存储元件（43）的下面和顶部，并且能够访问磁存储元件（43）。这些线被除了面向磁性存储元件（43）的高磁导率层（31,56,58）包围，磁性层屏蔽并将磁场聚焦到磁性存储元件（43）。

12. 发明授权

US5959880A Low aspect ratio magnetoresistive tunneling junction 失效
标题翻译：低纵横比磁阻隧道结
公开(公告)号：US5959880A
公开(公告)日：1999-09-28
申请号：US993996
申请日：1997-12-18
申请人： Jing Shi , Theodore Zhu , Saied N. Tehrani , Eugene Chen , Mark Durlam
发明人： Jing Shi , Theodore Zhu , Saied N. Tehrani , Eugene Chen , Mark Durlam
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , G11C11/00
CPC分类号： G11C11/5607 , G11C11/15 , G11C11/16 , G11C2211/5615
摘要： A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.
摘要翻译：低纵横比磁阻隧穿结存储单元包括由电绝缘材料分开的两层磁阻材料，以形成磁阻隧道结。交换相互作用层夹在一层结和第三层磁阻材料之间，以便将一层结的磁矢量与第三层中的磁矢量平行地平行，从而使连接点之间的静磁相互作用层被取消，并且一层的磁矢量在平行于偏振轴的两个方向中的任一方向上自由移动。反铁磁材料位于第三层附近，以将磁矢量固定在与偏振轴方向平行的第三层中。

13. 发明授权

US5902690A Stray magnetic shielding for a non-volatile MRAM 失效
标题翻译：杂散磁屏蔽用于非挥发性MRAM
公开(公告)号：US5902690A
公开(公告)日：1999-05-11
申请号：US806275
申请日：1997-02-25
申请人： Clarence J. Tracy , Eugene Chen , Mark Durlam , Theodore Zhu , Saied N. Tehrani
发明人： Clarence J. Tracy , Eugene Chen , Mark Durlam , Theodore Zhu , Saied N. Tehrani
IPC分类号： G11C11/15 , H01L27/22 , B32B9/00
CPC分类号： H01L27/228 , G11C11/15 , Y10S977/838 , Y10T428/1164
摘要： A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn--Zn-Ferrite, Ni--Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.
摘要翻译：定位在半导体衬底上的非易失性磁阻存储器通过部分或完全围绕非易失性磁阻存储器的钝化层与杂散磁场屏蔽。钝化层包括非导电铁氧体材料，例如Mn-Zn-铁素体，Ni-Zn-铁素体，MnFeO，CuFeO，FeO或NiFeO，用于屏蔽非易失性磁阻存储器与杂散磁场。非导电铁氧体材料也可以是将内部产生的磁场聚焦在非易失性磁阻存储器上以降低功率需求的层的形式。

14. 发明授权

US6153443A Method of fabricating a magnetic random access memory 失效
标题翻译：制造磁性随机存取存储器的方法
公开(公告)号：US6153443A
公开(公告)日：2000-11-28
申请号：US216821
申请日：1998-12-21
申请人： Mark Durlam , Gloria Kerszykowski , Jon M. Slaughter , Eugene Chen , Saied N. Tehrani , Kelly W. Kyler , X. Theodore Zhu
发明人： Mark Durlam , Gloria Kerszykowski , Jon M. Slaughter , Eugene Chen , Saied N. Tehrani , Kelly W. Kyler , X. Theodore Zhu
IPC分类号： G11C11/14 , G11C11/15 , H01F10/14 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L27/22 , H01L43/08 , H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , H01L27/115
摘要： An improved and novel fabrication method for magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (53, 54). A dielectric layer (40, 41) is deposited on the circuit, and trenches (42, 43) are formed in the dielectric layer. A blanket layer (46), which includes magnetic layers (48, 49) and a non-magnetic layer (50) sandwiched by the magnetic layers, is deposited on dielectric layer (41) and in the trenches. Then, the blanket layer outside the trenches is removed and MRAM elements (53, 54) are formed in the trenches.
摘要翻译：提供了一种用于磁阻随机存取存储器（MRAM）的改进和新颖的制造方法。 MRAM设备具有用于管理存储器元件的存储器元件和电路。电路包括集成在基板（11）上的晶体管（12a），数字线（29）等。首先在CMOS工艺之下制造电路，然后制造磁存储元件（53,54）。电介质层（40,41）沉积在电路上，并在电介质层中形成沟槽（42,43）。包含磁性层（48,49）和由磁性层夹着的非磁性层（50）的覆盖层（46）沉积在电介质层（41）和沟槽中。然后，去除沟槽外的覆盖层，并在沟槽中形成MRAM元件（53,54）。

15. 发明授权

US5966323A Low switching field magnetoresistive tunneling junction for high density arrays 失效
标题翻译：低开关场磁阻隧穿结，用于高密度阵列
公开(公告)号：US5966323A
公开(公告)日：1999-10-12
申请号：US993768
申请日：1997-12-18
申请人： Eugene Chen , Mark Durlam , Saied N. Tehrani
发明人： Eugene Chen , Mark Durlam , Saied N. Tehrani
IPC分类号： G11C11/15 , G11C11/56 , G11C11/00
CPC分类号： G11C11/161 , G11C11/1675 , G11C11/5607 , G11C2211/5615
摘要： A low switching field magnetoresistive tunneling junction memory cell including a first exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, a second exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, and electrically insulating material sandwiched between the first and second exchange coupled structures to form a magnetoresistive tunneling junction. Each of the first and second exchange coupled structures, and hence the memory cell, has no net magnetic moment.
摘要翻译：一种低开关场磁阻隧道结存储单元，包括具有一对磁阻层和夹在其间的交换相互作用层的第一交换耦合结构，以便将所述一对层的磁矢量反并联，第二交换耦合结构具有夹在它们之间的一对磁阻层和交换相互作用层，以便将一对层的磁矢量反平行，以及夹在第一和第二交换耦合结构之间的电绝缘材料，以形成磁阻隧道结。第一和第二交换耦合结构，因此存储单元中的每一个都没有净磁矩。

16. 发明授权

US5831920A GMR device having a sense amplifier protected by a circuit for dissipating electric charges 失效
标题翻译： GMR器件具有由用于耗散电荷的电路保护的读出放大器
公开(公告)号：US5831920A
公开(公告)日：1998-11-03
申请号：US949605
申请日：1997-10-14
申请人： Eugene Chen , Saied N. Tehrani , Mark Durlam , Peter K. Naji
发明人： Eugene Chen , Saied N. Tehrani , Mark Durlam , Peter K. Naji
IPC分类号： G11C11/16 , G11C7/00
CPC分类号： G11C11/16
摘要： A new and improved magnetic device is provided for memories and sensors. A magnetic random access memory (MRAM) device (20) includes a storage element (21) for magnetically storing states and an amplifier (25) for sensing the states stored in the storage element. A circuit (27) for dissipating electrical charges are coupled to inputs (23,24) of the amplifier (25) to discharge electrical charges applied to the inputs (23,24) of the amplifier (25). The charge dissipating circuit (27) includes junctions (271-274) which are typically connected in series between power (255) and common (257) lines. Electric charges applied to the inputs (23,24) of the amplifier (25) is discharged through the junctions (271-274).
摘要翻译：为存储器和传感器提供了一种新的改进的磁性器件。磁性随机存取存储器（MRAM）装置（20）包括用于磁存储状态的存储元件（21）和用于感测存储在存储元件中的状态的放大器（25）。用于耗散电荷的电路（27）耦合到放大器（25）的输入（23,24），以放电施加到放大器（25）的输入端（23,24）的电荷。电荷消耗电路（27）包括通常在功率（255）和公共（257）线之间串联连接的结（271-274）。施加到放大器（25）的输入端（23,24）的电荷通过接点（271-274）放电。

17. 发明授权

US5552330A Resonant tunneling fet and methods of fabrication 失效
标题翻译：谐振隧道和制造方法
公开(公告)号：US5552330A
公开(公告)日：1996-09-03
申请号：US386171
申请日：1995-02-09
申请人： Saied N. Tehrani , Herbert Goronkin , Jun Shen , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Herbert Goronkin , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/68 , H01L21/20 , H01L21/334 , H01L27/06 , H01L29/205 , H01L29/76 , H01L21/265 , H01L21/44
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L27/0605 , H01L29/66939 , H01L29/7606
摘要： A resonant tunneling FET including a heterostructure FET with a channel layer having a first current contact and a control contact operatively coupled thereto and a resonant tunneling device, including a quantum well layer sandwiched between barrier layers with a resonant tunneling layer affixed to an opposite side of one barrier layer, operably affixed to the heterostructure FET to form a second current contact. The resonant tunneling FET being constructed from a material system which allows the fabrication of additional devices on the same substrate.
摘要翻译：一种谐振隧穿FET，其包括具有第一电流接触的通道层和可操作地耦合到其上的控制触点的异质结构FET，以及谐振隧穿装置，其包括夹在阻挡层之间的量子阱层，其中谐振隧穿层固定在一个阻挡层，可操作地固定到异质结构FET以形成第二电流接触。谐振隧道FET由材料系统构成，其允许在同一衬底上制造附加器件。

18. 发明授权

US5489785A Band-to-band resonant tunneling transistor 失效
标题翻译：带对带谐振隧道晶体管
公开(公告)号：US5489785A
公开(公告)日：1996-02-06
申请号：US209789
申请日：1994-03-11
申请人： Saied N. Tehrani , Jun Shen , Herbert Goronkin , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Jun Shen , Herbert Goronkin , Xiaodong T. Zhu
IPC分类号： H01L29/68 , H01L29/06 , H01L29/205 , H01L29/737 , H01L27/12
CPC分类号： H01L29/7376 , B82Y10/00
摘要： A band-to-band resonant tunneling transistor including GaSb and InAs resonant tunneling layers separated by a thin barrier layer and a second InAs layer separated from the GaSb layer by another thin barrier layer. A terminal on the InAs resonant tunneling layer and a terminal on the second InAs layer. Leakage current reduction layers are positioned on the second InAs layer with a bias terminal positioned thereon. The InAs resonant tunneling layer has a plurality of quantized states which are misaligned with the ground state of the GaSb layer in a quiescent state, each of the quantized states of the InAs resonant tunneling layer are movable into alignment with the ground state of the GaSb layer to provide current flow through the transistor with the application of a specific potential to the terminal on the second InAs layer.
摘要翻译：包括GaSb和InAs谐振隧道层的带对带谐振隧穿晶体管，其由薄的阻挡层和由另一个薄的阻挡层与GaSb层分离的第二InAs层隔开。 InAs谐振隧穿层上的一个端子和第二个InAs层上的一个端子。漏电流减少层位于第二InAs层上，偏置端子位于其上。 InAs谐振隧穿层具有与处于静止状态的GaSb层的基态不对准的多个量化状态，InAs谐振隧穿层的每个量子化状态可移动地与GaSb层的基态对准以通过向第二InAs层上的端子施加特定电位来提供流过晶体管的电流。

19. 发明授权

US5978257A Multi-layer magnet tunneling junction memory cells 失效
标题翻译：多层磁铁隧道结存储单元
公开(公告)号：US5978257A
公开(公告)日：1999-11-02
申请号：US28426
申请日：1998-02-24
申请人： Xiaodong T. Zhu , Herbert Goronkin , Saied N. Tehrani
发明人： Xiaodong T. Zhu , Herbert Goronkin , Saied N. Tehrani
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , H01L21/8246
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , G11C2211/5615 , G11C2211/5616
摘要： A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.
摘要翻译：一种多态多层磁存储单元，包括第一导体，与第一导体接触的第一磁性层，第一磁性层上的绝缘层，绝缘层上的第二磁性层，与第二磁性体接触的第二导体层，以及与单元相邻或接触的字线，以便提供磁场以沿着第一磁性层的长度部分地切换磁矢量。通过使一条电流通过字线并通过第一和第二导体的第二电流足以切换第一和第二磁性层中的矢量来存储信息。通过使读取电流通过足以通过第一和第二导体切换一层（而不是另一层）和感测电流通过电池的读取电流，并测量电池两端的电阻来实现感测。

20. 发明授权

US5294809A Resonant tunneling diode with reduced valley current 失效
标题翻译：谐振隧道二极管具有减小的谷电流
公开(公告)号：US5294809A
公开(公告)日：1994-03-15
申请号：US65338
申请日：1993-05-24
申请人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
发明人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/88
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/882
摘要： A resonant tunneling diode having a quantum well sandwiched between first and second tunnel barrier layers and the quantum well and tunnel barrier layers sandwiched between an injection layer and a collector layer. The improvement includes a relatively thin layer of semiconductor material sandwiched between either the first tunnel barrier layer and the injection layer or the first tunnel barrier layer and the quantum well. The thin semiconductor layer has a valence band with an energy level lower than the valence band of the first tunnel barrier layer so as to prevent minority carriers from travelling toward the injection layer.
摘要翻译：一种谐振隧道二极管，其具有夹在第一和第二隧道势垒层之间的量子阱以及夹在注入层和集电极层之间的量子阱和隧道势垒层。该改进包括夹在第一隧道势垒层和注入层之间的相对薄的半导体材料层或第一隧道势垒层和量子阱。薄半导体层具有能级低于第一隧道势垒层的价带的价带，以防止少数载流子朝向注入层行进。

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