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11. 发明授权

US09783702B1 Aqueous compositions of low abrasive silica particles 有权
公开(公告)号：US09783702B1
公开(公告)日：2017-10-10
申请号：US15297716
申请日：2016-10-19
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley , Matthew Van Hanehem
IPC分类号： G09G1/02 , C09G1/02 , C09K3/14 , C09G1/04 , C09G1/06 , C09G1/00 , C09K13/06 , C01B33/14 , H01L21/306 , C01B33/18 , B24B37/04 , H01L21/321
CPC分类号： C09G1/02 , B24B37/044 , C01B33/00 , C01B33/14 , C01B33/18 , C09G1/00 , C09G1/04 , C09G1/06 , C09K3/1409 , C09K3/1454 , C09K3/1463 , C09K13/06 , H01L21/30625 , H01L21/31053 , H01L21/3212
摘要： The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.

12. 发明申请

US20150079788A1 LOW DEFECT CHEMICAL MECHANICAL POLISHING COMPOSITION 有权
标题翻译：低缺陷化学机械抛光组合物
公开(公告)号：US20150079788A1
公开(公告)日：2015-03-19
申请号：US14030126
申请日：2013-09-18
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/30625 , H01L21/31053
摘要： A low defect chemical mechanical polishing composition for polishing silicon oxide containing substrates is provided comprising, as initial components: water, a colloidal silica abrasive; and, an additive according to formula I.
摘要翻译：提供了用于抛光含氧化硅的基材的低缺陷化学机械抛光组合物，其包括作为初始组分的水，胶体二氧化硅研磨剂; 和根据式I的添加剂。

13. 发明授权

US11472984B1 Method of enhancing the removal rate of polysilicon 有权
公开(公告)号：US11472984B1
公开(公告)日：2022-10-18
申请号：US17485595
申请日：2021-09-27
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo
IPC分类号： C09G1/02 , H01L21/306 , C09K13/00
摘要： A method of enhancing the removal rate of polysilicon from a substrate includes mixing an acid chemical mechanical polishing slurry containing water, an organic acid and an abrasive with an alkaline solution containing water, an abrasive, a low alkyl amine compound; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the mixture of the chemical mechanical polishing slurry and the alkaline solution onto the polishing surface at or near the interface between the polishing pad and the substrate, wherein some of the polysilicon is polished away from the substrate.

14. 发明授权

US11274230B1 Polishing composition and method of polishing a substrate having enhanced defect inhibition 有权
公开(公告)号：US11274230B1
公开(公告)日：2022-03-15
申请号：US17241377
申请日：2021-04-27
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo
IPC分类号： C09G1/02 , C07F9/54
摘要： An aqueous alkaline chemical mechanical polishing composition includes a quaternary phosphonium compound having aromatic groups which enables enhanced reduction of defects on silicon oxide substrates and enables good silicon oxide removal rates during chemical mechanical polishing. The chemical mechanical polishing composition is stable.

15. 发明申请

US20210324236A1 CHEMICAL MECHANICAL POLISHING COMPOSITION CONTAINING COMPOSITE SILICA PARTICLES, METHOD OF MAKING THE SILICA COMPOSITE PARTICLES AND METHOD OF POLISHING A SUBSTRATE 有权
公开(公告)号：US20210324236A1
公开(公告)日：2021-10-21
申请号：US16849135
申请日：2020-04-15
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo
IPC分类号： C09G1/02
摘要： A chemical mechanical polishing composition includes water, colloidal silica abrasive particles with a silica core containing a nitrogen species, a cerium compound coating including cerium oxide, cerium hydroxide or mixtures thereof, and a positive zeta potential, optionally an oxidizing agent, optionally a pH adjusting agent, optionally a biocide and optionally a surfactant. The chemical mechanical polishing composition has a pH of less than 7. Also described is a method of polishing a substrate containing silicon dioxide and a method of making the composite colloidal silica particles with the coating of cerium oxide, cerium hydroxide or mixtures thereof. The chemical mechanical polishing composition can be used to enhance the removal of silicon dioxide from a substrate in an acid environment.

16. 发明申请

US20210071034A1 METHOD OF SELECTIVE CHEMICAL MECHANICAL POLISHING COBALT, ZIRCONIUM OXIDE, POLY-SILICON AND SILICON DIOXIDE FILMS. 有权
公开(公告)号：US20210071034A1
公开(公告)日：2021-03-11
申请号：US16567064
申请日：2019-09-11
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Murali Ganth Theivanayagam , Matthew Richard Van Hanehem , Yi Guo
IPC分类号： C09G1/02 , C09K3/14 , C09G1/18
摘要： A process for chemical mechanical polishing a substrate containing cobalt, zirconium oxide, poly-silicon and silicon dioxide, wherein the cobalt, zirconium, and poly-silicon removal rates are selective over silicon dioxide. The chemical mechanical polishing composition includes water, a benzyltrialkyl quaternary ammonium compound, cobalt chelating agent, corrosion inhibitor, colloidal silica abrasive, optionally a biocide and optionally a pH adjusting agent, and a pH greater than 7, and the chemical mechanical polishing compositions are free of oxidizing agents.

17. 发明授权

US10781343B2 Acid polishing composition and method of polishing a substrate having enhanced defect inhibition 有权
公开(公告)号：US10781343B2
公开(公告)日：2020-09-22
申请号：US16256593
申请日：2019-01-24
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley
IPC分类号： C09G1/02 , H01L21/306 , B24B37/04 , B24B1/00 , C09G1/00 , C09K3/14 , C09G1/04 , C09G1/06 , C09K13/06 , H01L21/321
摘要： An acid chemical mechanical polishing composition includes colloidal silica abrasive particles having a positive zeta potential, and select alkoxysilane succinic acid anhydride compounds to enhance the reduction of defects on dielectric materials of substrates such as silicon dioxide and silicon nitride. Also disclosed are methods for polishing a substrate with the acid chemical mechanical polishing composition to remove some of the dielectric materials such as silicon dioxide and silicon nitride.

18. 发明授权

US10508221B2 Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them 有权
公开(公告)号：US10508221B2
公开(公告)日：2019-12-17
申请号：US15718998
申请日：2017-09-28
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo , David Mosley , Naresh Kumar Penta
IPC分类号： C09G1/02 , H01L21/762 , H01L21/3105 , C09K3/14
摘要： The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising one or more dispersions of colloidal silica particles having a zeta potential of from +5 to +50 mV and having one or more aminosilane group, preferably, elongated, bent or nodular colloidal silica particles, or, more preferably, such particles which contain a cationic nitrogen atom, and at least one amine heterocycle carboxylic acid having an isolectric point (pI) of from 2.5 to 5, preferably, from 3 to 4. The compositions have a pH of from 2.5 to 5.3. Preferably, the amine heterocycle carboxylic acid is an amine-containing heterocyclic monocarboxylic acid, such as nicotinic acid, picolinic acid, or isonicotinic acid. The compositions enable enhanced oxide:nitride removal rate ratios.

19. 发明授权

US09484212B1 Chemical mechanical polishing method 有权
标题翻译：化学机械抛光方法
公开(公告)号：US09484212B1
公开(公告)日：2016-11-01
申请号：US14927704
申请日：2015-10-30
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc. , Dow Global Technologies LLC
发明人： Bainian Qian , Yi Guo , Marty W. DeGroot , George C. Jacob
IPC分类号： H01L21/306 , B24D11/00 , B24B37/24
CPC分类号： B24B37/24 , B24D11/003 , H01L21/31053
摘要： A chemical mechanical polishing method is provided comprising: providing a substrate, wherein the substrate comprises a silicon oxide and a silicon nitride; providing a polishing slurry; providing polishing pad, comprising: a polishing layer having a composition that is a reaction product of ingredients, comprising: a polyfunctional isocyanate and an amine initiated polyol curative; wherein the stoichiometric ratio of the amine initiated polyol curative to the polyfunctional isocyanate is selected to tune the removal rate selectivity of the polishing layer; creating dynamic contact between the polishing surface and the substrate; dispensing the polishing slurry on the polishing pad at or near the interface between the polishing surface and the substrate; and, removing at least some of the silicon oxide and the silicon nitride from the substrate.
摘要翻译：提供了一种化学机械抛光方法，包括：提供衬底，其中所述衬底包括氧化硅和氮化硅; 提供抛光浆料; 提供抛光垫，包括：抛光层，其具有作为成分的反应产物的组合物，所述组合物包含：多官能异氰酸酯和胺引发的多元醇固化剂; 其中选择胺引发的多元醇固化剂与多官能异氰酸酯的化学计量比以调节抛光层的去除速率选择性; 在抛光表面和基底之间产生动态接触; 在抛光表面和基底之间的界面处或附近在抛光垫上分配抛光浆料; 并且从衬底去除至少一些氧化硅和氮化硅。

20. 发明申请

US20230099954A1 METHOD OF ENHANCING THE REMOVAL RATE OF POLYSILICON 有权
公开(公告)号：US20230099954A1
公开(公告)日：2023-03-30
申请号：US17930472
申请日：2022-09-08
申请人： Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人： Yi Guo
IPC分类号： C09G1/02 , C09K13/00 , H01L21/306
摘要： A method of enhancing the removal rate of polysilicon from a substrate includes mixing an acid chemical mechanical polishing slurry containing water, an organic acid and an abrasive with an alkaline solution containing water, an abrasive, a low alkyl amine compound; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the mixture of the chemical mechanical polishing slurry and the alkaline solution onto the polishing surface at or near the interface between the polishing pad and the substrate, wherein some of the polysilicon is polished away from the substrate.

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