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    • 11. 发明授权
    • Method of manufacturing a trench structure in a semiconductor substrate
    • 在半导体衬底中制造沟槽结构的方法
    • US6107158A
    • 2000-08-22
    • US47959
    • 1998-03-25
    • Jie ZhengCalvin Todd GabrielSuzanne Monsees
    • Jie ZhengCalvin Todd GabrielSuzanne Monsees
    • H01L21/762H01L21/306
    • H01L21/76232Y10S438/978
    • A shallow trench isolation structure and method for forming such structure. In one embodiment, the semiconductor device isolating structure of the present invention includes a trench formed into a semiconductor substrate. A cross-section of the trench has a first sidewall sloping inwardly towards the center of a substantially planar bottom surface, and a second sidewall sloping inwardly towards the center of the substantially planar bottom surface. Additionally, a cross section of the trench has a first rounded bottom trench corner at an interface of the first sidewall and the substantially planar bottom surface, and a second rounded bottom trench corner at an interface of the second sidewall and the substantially planar bottom surface. Furthermore, the trench of the present invention has a first rounded upper trench corner at the interface of the first sidewall and the top surface of the semiconductor substrate, and a second rounded upper trench corner at the interface of the second sidewall and the top surface of the semiconductor substrate. Thus, the trench of the present invention does not have micro-trenches formed into the bottom surface thereof. Additionally, the present invention does not have the sharp upper and bottom corners found in conventional trenches formed using a shallow trench isolation method. The present invention also provides a method to eliminate deleterious micromasking and spike formation.
    • 浅沟槽隔离结构及其形成方法。 在一个实施例中,本发明的半导体器件隔离结构包括形成半导体衬底的沟槽。 沟槽的横截面具有朝向基本上平坦的底表面的中心向内倾斜的第一侧壁和朝向基本平坦的底表面的中心向内倾斜的第二侧壁。 此外,沟槽的横截面具有在第一侧壁和基本上平坦的底表面的界面处的第一圆形底部沟槽角以及在第二侧壁和基本上平坦的底表面的界面处的第二圆形底部沟槽拐角。 此外,本发明的沟槽在第一侧壁和半导体衬底的顶表面的界面处具有第一圆形上沟槽角,以及在第二侧壁和第二侧壁的顶表面的界面处的第二圆形上沟槽角 半导体衬底。 因此,本发明的沟槽不具有形成在其底表面中的微沟槽。 此外,本发明不具有使用浅沟槽隔离方法形成的常规沟槽中发现的尖锐的上部和下部角落。 本发明还提供消除有害的微掩模和尖峰形成的方法。
    • 17. 发明授权
    • Nano-sized optical fluorescence labels and uses thereof
    • 纳米尺寸的光学荧光标记及其用途
    • US08105847B2
    • 2012-01-31
    • US12571865
    • 2009-10-01
    • Robert Martin DicksonJie Zheng
    • Robert Martin DicksonJie Zheng
    • G01N33/553
    • B82Y15/00G01N33/582G01N33/588Y10S436/805
    • A composition is disclosed which is capable of being used for detection, comprising an encapsulated noble metal nanocluster. Methods for preparing the encapsulated noble metal nanoclusters, and methods of using the encapsulated noble metal nanoclusters are also disclosed. The noble metal nanoclusters are preferably encapsulated by a dendrimer or a peptide. The encapsulated noble metal nanoclusters have a characteristic spectral emission, wherein said spectral emission is varied by controlling the nature of the encapsulating material, such as by controlling the size of the nanocluster and/or the generation of the dendrimer, and wherein said emission is used to provide information about a biological state.
    • 公开了能够用于检测的组合物,其包含包封的贵金属纳米簇。 还公开了制备包封的贵金属纳米簇的方法,以及使用包封的贵金属纳米团簇的方法。 贵金属纳米团簇优选被树枝状聚合物或肽包封。 封装的贵金属纳米团簇具有特征光谱发射,其中所述光谱发射通过控制封装材料的性质而变化,例如通过控制纳米簇的尺寸和/或树枝状聚合物的产生,并且其中使用所述发射 提供有关生物状态的信息。