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11. 发明授权

US06195163B1 Reflectance method for evaluating the surface characteristics of opaque materials 有权
标题翻译：用于评估不透明材料表面特性的反射方法
公开(公告)号：US06195163B1
公开(公告)日：2001-02-27
申请号：US09175061
申请日：1998-10-19
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施方案中包括使用UV反射计来构建来自一组对照样品的数据的校准矩阵，并将期望的表面特性如粗糙度或表面积与对照样品的一组反射率相关联。然后使用UV反射计来测量未知表面特性的测试样品的反射率。对于各种波长，优选在约250纳米到约400纳米之间的各种反射角拍摄反射率。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于广泛的波长和使用的反射角度，从而得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法对于确定集成电路技术中电容器板结构中使用的高度粒状多晶硅测试样品的电容特别有用，可用于确定平坦光滑表面的存在，以及平面上存在棱镜和半球形不规则光滑的表面。

12. 发明授权

US6150706A Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer 失效
公开(公告)号：US6150706A
公开(公告)日：2000-11-21
申请号：US32182
申请日：1998-02-27
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall
IPC分类号： G11C11/404 , G11C17/16 , H01L21/02 , H01L21/285 , H01L21/768 , H01L21/8242 , H01L29/00
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L28/60
摘要： A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.

13. 发明授权

US5825498A Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials 失效
标题翻译：用于评估不透明材料表面特性的紫外光反射率法
公开(公告)号：US5825498A
公开(公告)日：1998-10-20
申请号：US596469
申请日：1996-02-05
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B11/30 , G01B11/00
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施方案中包括使用UV反射计来构建来自一组对照样品的数据的校准矩阵，并将期望的表面特性如粗糙度或表面积与对照样品的一组反射率相关联。然后使用UV反射计测量未知表面特性的测试样品的反射率。反射率以各种波长进行，优选在约250纳米至约400纳米之间。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于所使用的波长范围广，因此得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法对于确定集成电路技术中用于构造电容器板的高度粒状多晶硅测试样品的电容特别有用。

14. 发明授权

US5712186A Method for growing field oxide to minimize birds' beak length 失效
标题翻译：生长场氧化物以最小化鸟的喙长度的方法
公开(公告)号：US5712186A
公开(公告)日：1998-01-27
申请号：US662852
申请日：1996-06-12
申请人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
发明人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76213
摘要： A method for forming field oxide isolation regions using oxygen implantation is described. An oxidation resistant layer such as silicon nitride is formed on a silicon substrate, and acts as an oxidation mask. An opening is then formed in the nitride layer, where field oxide is desired. In one embodiment of the invention, oxygen is implanted into this opening, followed by thermal oxidation. In a second embodiment of the invention, the opening is thermally oxidized, followed by a deep oxygen implant and anneal. Encroachment of the field oxide under the nitride layer is decreased, resulting in a minimum "birds' beak" length.
摘要翻译：描述了使用氧注入形成场氧化物隔离区的方法。在硅衬底上形成氮化硅等抗氧化层，作为氧化掩模。然后在氮化物层中形成开口，其中期望场氧化物。在本发明的一个实施方案中，将氧气注入该开口，随后进行热氧化。在本发明的第二实施例中，开口被热氧化，随后进行深氧注入和退火。在氮化物层下的场氧化物的侵蚀减少，导致最小的“鸟”喙长度。

15. 发明授权

US07576380B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
公开(公告)号：US07576380B2
公开(公告)日：2009-08-18
申请号：US11502090
申请日：2006-08-09
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L29/00
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

16. 发明授权

US06452678B2 Reflectance method for evaluating the surface characteristics of opaque materials 有权
标题翻译：用于评估不透明材料表面特性的反射方法
公开(公告)号：US06452678B2
公开(公告)日：2002-09-17
申请号：US09928286
申请日：2001-08-10
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1100
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as rouglness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施例中包括使用UV反射计来构建来自一组控制样本的数据的校准矩阵，并将期望的表面特性（例如粗糙度或表面积）与对照样品的一组反射率相关联。然后使用UV反射计来测量未知表面特性的测试样品的反射率。对于各种波长，优选在约250纳米到约400纳米之间的各种反射角拍摄反射率。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于广泛的波长和使用的反射角度，从而得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法对于确定集成电路技术中电容器板结构中使用的高度粒状多晶硅测试样品的电容特别有用，可用于确定平坦光滑表面的存在，以及平面上存在棱镜和半球形不规则光滑的表面。

17. 发明授权

US06333243B1 Method for growing field oxide to minimize birds' beak length 失效
标题翻译：生长场氧化物以最小化鸟的喙长度的方法
公开(公告)号：US06333243B1
公开(公告)日：2001-12-25
申请号：US09506179
申请日：2000-02-17
申请人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
发明人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
IPC分类号： H01L2176
CPC分类号： H01L21/76213
摘要： A method for forming field oxide isolation regions using oxygen implantation is described. An oxidation resistant layer such as silicon nitride is formed on a silicon substrate, and acts as an oxidation mask. An opening is then formed in the nitride layer, where field oxide is desired. In one embodiment of the invention, oxygen is implanted into this opening, followed by thermal oxidation. In a second embodiment of the invention, the opening is thermally oxidized, followed by a deep oxygen implant and anneal. Encroachment of the field oxide under the nitride layer is decreased, resulting in a minimum “birds' beak” length.
摘要翻译：描述了使用氧注入形成场氧化物隔离区的方法。在硅衬底上形成氮化硅等抗氧化层，作为氧化掩模。然后在氮化物层中形成开口，其中期望场氧化物。在本发明的一个实施方案中，将氧气注入该开口，随后进行热氧化。在本发明的第二实施例中，开口被热氧化，随后进行深氧注入和退火。在氮化物层下的场氧化物的侵蚀减少，导致最小的“鸟”喙长度。

18. 发明授权

US06275292B1 Reflectance method for evaluating the surface characteristics of opaque materials 有权
公开(公告)号：US06275292B1
公开(公告)日：2001-08-14
申请号：US09517473
申请日：2000-03-02
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

19. 发明授权

US6027984A Method for growing oxide 失效
标题翻译：生长氧化物的方法
公开(公告)号：US6027984A
公开(公告)日：2000-02-22
申请号：US933411
申请日：1997-09-19
申请人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
发明人： Randhir P. S. Thakur , Michael Nuttall , Pai-Hung Pan
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76213
摘要： A method for forming field oxide isolation regions using oxygen implantation is described. An oxidation resistant layer such as silicon nitride is formed on a silicon substrate, and acts as an oxidation mask. An opening is then formed in the nitride layer, where field oxide is desired. In one embodiment of the invention, oxygen is implanted into this opening, followed by thermal oxidation. In a second embodiment of the invention, the opening is thermally oxidized, followed by a deep oxygen implant and anneal. Encroachment of the field oxide under the nitride layer is decreased, resulting in a minimum "birds' beak" length.
摘要翻译：描述了使用氧注入形成场氧化物隔离区的方法。在硅衬底上形成氮化硅等抗氧化层，作为氧化掩模。然后在氮化物层中形成开口，其中期望场氧化物。在本发明的一个实施方案中，将氧气注入该开口，随后进行热氧化。在本发明的第二实施例中，开口被热氧化，随后进行深氧注入和退火。在氮化物层下的场氧化物的侵蚀减少，导致最小的“鸟”喙长度。

20. 发明授权

US07101756B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
公开(公告)号：US07101756B2
公开(公告)日：2006-09-05
申请号：US10781987
申请日：2004-02-18
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
IPC分类号： H01L21/8242 , H01L21/336 , H01L21/20
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

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