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    • 16. 发明申请
    • Payload allocation methods for scalable multimedia servers
    • 可扩展多媒体服务器的有效负载分配方法
    • US20090125636A1
    • 2009-05-14
    • US11985054
    • 2007-11-13
    • Qiong LiLinfeng GuoMichael David VernickMark Sydorenko
    • Qiong LiLinfeng GuoMichael David VernickMark Sydorenko
    • G06F15/16
    • H04L65/4092H04L65/602H04L65/608
    • The dynamic streaming of multimedia data between a data server and one or more clients is disclosed. Dynamic streaming enables the rapid and accurate characterization of the end-to-end path conditions in a server-client streaming session, as well as the rapid and intelligent response to those conditions in terms of source compression prior to data packetization. The most significant bits of an original bit stream can be adaptively and immediately selected in response to network conditions. The adaptive selection process is informed by feedback from the client receiver indicative of a time-to-transit the network from server to client. A control protocol and server architecture, including file format, data structure, data processing procedures, cache control mechanisms, and adaptation algorithms useful in implementing dynamic streaming are also disclosed.
    • 公开了数据服务器与一个或多个客户端之间的多媒体数据的动态流传输。 动态流可以快速准确地表征服务器 - 客户端流媒体会话中的端到端路径条件,以及在数据分组化之前对源压缩的这些条件的快速和智能响应。 可以根据网络条件自适应地立即选择原始位流的最高有效位。 自适应选择过程通过来自客户端接收器的反馈通知,指示网络从服务器到客户端的转发时间。 还公开了一种控制协议和服务器架构,包括文件格式,数据结构,数据处理过程,高速缓存控制机制和适用于实现动态流传输的适配算法。
    • 18. 发明授权
    • IMD scheme by post-plasma treatment of FSG and TEOS oxide capping layer
    • 通过后处理FSG和TEOS氧化物覆盖层的IMD方案
    • US06284644B1
    • 2001-09-04
    • US09684518
    • 2000-10-10
    • Arthur Khoon Siah AugFeng ChenQiong Li
    • Arthur Khoon Siah AugFeng ChenQiong Li
    • H01L214763
    • H01L21/76829G01V3/15H01L21/76801H01L21/76814H01L21/76826H01L21/76831
    • A method of forming a metal interconnect within a fluorinated silica glass dielectric layer while preventing outgassing from the FSG dielectric layer, comprising the following steps. A semiconductor structure having a metal structure, with an overlying liner layer, formed thereover is provided. A FSG dielectric layer is formed over the liner layer. The FSG dielectric layer having an exposed upper surface. The FSG dielectric layer is treated with a first nitrogen gas/plasma treatment to form a fluorine depleted upper capping layer from the exposed surface of the FSG dielectric layer. A TEOS oxide layer is formed over the upper capping layer. The TEOS oxide layer is planarized to form a planarized TEOS oxide layer. The planarized TEOS oxide layer, the upper capping layer, the treated FSG dielectric layer, and the liner layer are patterned to form a via hole therethrough, exposing a portion of the metal structure and exposing sidewalls of the patterned treated FSG dielectric layer within the via opening. At least the exposed sidewalls of the patterned treated fluorinated silicon glass dielectric layer within the via opening is treated with a second nitrogen gas/plasma treatment to form a fluorine depleted sidewall capping layer from the exposed sidewalls of the patterned treated fluorinated silicon glass dielectric layer, wherein the upper and sidewall capping layers prevent the outgassing from the patterned FSG dielectric layer. A metal interconnect is formed within the via opening.
    • 一种在氟化石英玻璃介电层内形成金属互连的方法,同时防止从FSG介电层脱气,包括以下步骤。 提供具有金属结构的半导体结构,其上形成有覆盖衬垫层。 FSG电介质层形成在衬层上。 FSG电介质层具有暴露的上表面。 用第一氮气/等离子体处理处理FSG电介质层,以从FSG电介质层的暴露表面形成耗尽氟的上覆盖层。 在上盖层上形成TEOS氧化物层。 将TEOS氧化物层平坦化以形成平坦化的TEOS氧化物层。 对平坦化的TEOS氧化物层,上覆盖层,经处理的FSG电介质层和衬里层进行图案化以形成穿过其中的通孔,暴露金属结构的一部分并暴露图案化处理的FSG介电层的侧壁在通孔内 开放 通过第二氮气/等离子体处理处理至少通孔开口内图案化处理的氟化硅玻璃介电层的暴露的侧壁,以从图案化处理的氟化硅玻璃介电层的暴露的侧壁形成氟耗尽的侧壁封盖层, 其中上侧壁封盖层和侧壁封盖层防止从图案化的FSG电介质层脱气。 在通孔开口内形成金属互连。