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11. 发明申请

US20130099335A1 Novel Magnetic Tunnel Junction Device And Its Fabricating Method 有权
标题翻译：新型磁隧道接头装置及其制造方法
公开(公告)号：US20130099335A1
公开(公告)日：2013-04-25
申请号：US13335882
申请日：2011-12-22
申请人： Min-Hwa Chi , Xiufeng Han , Guoqiang Yu
发明人： Min-Hwa Chi , Xiufeng Han , Guoqiang Yu
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Using a damascene process, a cup-shaped MTJ device is formed in an opening within a dielectric layer. A passivation layer is formed on the top surfaces of the sidewalls of the cup-shaped MTJ device to enclose the top of the sidewalls, thereby reducing magnetic flux leakage. Accordingly, the MTJ device may be fabricated using the same equipment that are compatible with and commonly used in CMOS technologies/processes.
摘要翻译：使用镶嵌工艺，在电介质层内的开口中形成杯形MTJ器件。在杯形MTJ装置的侧壁的顶表面上形成钝化层以封闭侧壁的顶部，由此减小磁通量泄漏。因此，可以使用与CMOS技术/工艺中兼容并且通常使用的相同设备来制造MTJ器件。

12. 发明授权

US07936595B2 Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same 有权
标题翻译：包括或不包含金属芯的闭合形状的多层膜及其制造方法及其应用
公开(公告)号：US07936595B2
公开(公告)日：2011-05-03
申请号：US12159657
申请日：2006-12-31
申请人： Xiufeng Han , Ming Ma , Qihang Qin , Hongxiang Wei , Lixian Jiang , Yunan Han
发明人： Xiufeng Han , Ming Ma , Qihang Qin , Hongxiang Wei , Lixian Jiang , Yunan Han
IPC分类号： G11C11/14
CPC分类号： G11C11/155 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/1936 , H01F10/3254 , H01F10/3268 , H01F10/329 , H01F41/302 , H01L27/228 , H01L43/08
摘要： Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.
摘要翻译：磁性多层膜中的每层是闭环或椭圆环，并且磁性单元中的铁磁性膜的磁矩或磁通处于顺时针或逆时针处于接近状态。将金属芯置于紧密形状的磁性多层膜中的几何中心位置。金属芯的横截面是相应的圆形或椭圆形。 MRAM由具有或不具有金属芯的闭合磁性多层膜制成。通过微加工方法形成紧密形状的磁性多层膜。近似形状的磁性多层膜可以广泛用于以磁性多层膜为核心的多种器件，如MRAM，计算机中的磁珠，磁敏传感器，磁性逻辑器件和自旋晶体管。

13. 发明申请

US20080246023A1 Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions 审中-公开
标题翻译：基于双阻挡隧道结共振隧穿效应的晶体管
公开(公告)号：US20080246023A1
公开(公告)日：2008-10-09
申请号：US11663684
申请日：2005-04-08
申请人： Zhongming Zeng , Xiufeng Han , Jiafeng Feng , Tianxing Wang , Guanxiang Du , Feifei Li , Wenshan Zhan
发明人： Zhongming Zeng , Xiufeng Han , Jiafeng Feng , Tianxing Wang , Guanxiang Du , Feifei Li , Wenshan Zhan
IPC分类号： H01L29/06 , H01L27/082
CPC分类号： H01L29/66984 , B82Y10/00 , H01L29/7376
摘要： The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm2˜10000 μm2; the thickness of the base is comparable to the electron mean free path of material in the layer; the magnetization orientation is unbounded in one and only one pole of said emitter, base and collector. Because the double-barrier structure is used, it overcomes the Schottky potential between the base and the collector. Wherein the base current is a modulating signal, the collector signal is modulated to be similar to the base current's modulating mode by changing the magnetization orientation of the base or the collector, i.e., the resonant tunneling effect occurs. An amplified signal can be obtained under the suitable conditions.
摘要翻译：本发明涉及一种基于双阻挡隧道结的谐振隧道效应的晶体管，包括：衬底，发射极，基极，集电极和第一和第二隧道势垒层; 其中所述第一隧道势垒层位于所述发射极和所述基极之间，并且所述第二隧穿势垒层位于所述基极和所述集电极之间; 此外，形成在发射极和基极之间以及基极和集电极之间的隧道结的接合面分别为1μm2〜10000μm2。基底的厚度与层中材料的电子平均自由程相当; 磁化方向在所述发射极，基极和集电极的一个且仅一个极中是无界的。因为使用双重阻挡结构，它克服了基极和集电极之间的肖特基电位。其中基极电流是调制信号，通过改变基极或集电极的磁化取向，即发生谐振隧穿效应，将集电极信号调制成与基极电流的调制模式相似。在合适的条件下可以获得放大的信号。

14. 发明申请

US20070183186A1 Mram based on vertical current writing and its control method 有权
标题翻译：基于垂直电流写入的Mram及其控制方法
公开(公告)号：US20070183186A1
公开(公告)日：2007-08-09
申请号：US10599514
申请日：2004-12-01
申请人： Zilong Peng , Xiufeng Han , Sufen Zhao , Weining Wang , Wenshan Zhan
发明人： Zilong Peng , Xiufeng Han , Sufen Zhao , Weining Wang , Wenshan Zhan
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , B82Y10/00 , H01L27/228
摘要： The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.
摘要翻译：本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成，电流垂直于MFC单元并通过本机。这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本处理。

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