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    • 14. 发明授权
    • Thin film device for detection of physical quantities
    • 用于检测物理量的薄膜装置
    • US07615995B2
    • 2009-11-10
    • US11512217
    • 2006-08-30
    • Daniele PulliniGianfranco InnocentiPiermario RepettoAntonio Ruotolo
    • Daniele PulliniGianfranco InnocentiPiermario RepettoAntonio Ruotolo
    • G01R33/02
    • G01R33/09Y10S977/96
    • A thin-film device for detecting the variation of intensity of physical quantities, in particular a magnetic field, in a continuous way, comprises an electrical circuit including one or more sensitive elements, which are designed to vary their own electrical resistance as a function of the intensity of a physical quantity to be detected. One or more of the sensitive elements comprise at least one nanoconstriction, and the nanoconstriction comprises at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel. The nanochannel is able to set up a domain wall that determines the electrical resistance of the nanoconstriction as a function of the position, with respect to the nanochannel, of the domain wall formed in the sensor device. At least one cross section of the nanochannel is configured so as to present a variable extension along one or more axes as a function of different values of the physical quantity to be detected.
    • 用于以连续方式检测物理量,特别是磁场的强度的变化的薄膜装置包括电路,该电路包括一个或多个敏感元件,其被设计成根据 要检测的物理量的强度。 敏感元件中的一个或多个包括至少一个纳米收缩,并且纳米收缩包括由磁性材料制成的至少两个焊盘,所述至少两个焊盘是相互磁化的,它们彼此相反并且通过纳米通道连接。 纳米通道能够建立一个畴壁,其根据在传感器装置中形成的畴壁相对于纳米通道的位置确定纳米收缩的电阻。 纳米通道的至少一个横截面被配置为根据要检测的物理量的不同值的一个或多个轴呈现可变的延伸。
    • 15. 发明申请
    • Thin-film device for detection of physical quantities, in particular a magnetic field, and corresponding method of detection
    • 用于检测物理量,特别是磁场的薄膜装置和相应的检测方法
    • US20070091510A1
    • 2007-04-26
    • US11512217
    • 2006-08-30
    • Daniele PulliniGianfranco InnocentiPiermario RepettoAntonio Ruotolo
    • Daniele PulliniGianfranco InnocentiPiermario RepettoAntonio Ruotolo
    • G11B5/33
    • G01R33/09Y10S977/96
    • Described herein is a thin-film device for detecting physical quantities, in particular a magnetic field, of the type comprising an electrical circuit including one or more sensitive elements, which are designed to vary their own electrical resistance as a function of a physical quantity to be detected, said one or more sensitive elements comprising at least one nanoconstriction, said nanoconstriction comprising at least two pads made of magnetic material, associated to which are respective magnetizations oriented in directions substantially opposite to one another and connected through a nanochannel, said nanochannel being able to set up a domain wall that determines the electrical resistance of said nanoconstriction as a function of the position, with respect to said nanochannel, of said domain wall formed in said sensor device. At least one cross section of said nanochannel is configured so as to present a variable extension along one or more axes as a function of different values of said physical quantity to be detected.
    • 这里描述的是用于检测包括一个或多个敏感元件的电路的类型的物理量特别是磁场的薄膜装置,其被设计为根据物理量的变化来改变其自身的电阻, 所述一个或多个敏感元件包括至少一个纳米收缩,所述纳米收缩包括由磁性材料制成的至少两个焊盘,所述至少两个焊盘与磁性材料相关联,其相应的磁化方向基本上彼此相反并且通过纳米通道连接,所述纳米通道为 能够建立域壁,其根据形成在所述传感器装置中的所述畴壁的相对于所述纳米通道的位置的函数确定所述纳米收缩的电阻。 所述纳米通道的至少一个横截面被配置为沿着所述待检测物理量的不同值的一个或多个轴呈现可变延伸。
    • 18. 发明授权
    • Method for manufacturing magnetic field detection devices and devices therefrom
    • 用于制造磁场检测装置和装置的方法
    • US08012771B2
    • 2011-09-06
    • US12926284
    • 2010-11-08
    • Daniele PulliniBrunetto MartoranaPiero Perlo
    • Daniele PulliniBrunetto MartoranaPiero Perlo
    • H01L43/10H01L29/82
    • B82Y25/00B82Y40/00G01R33/06H01F10/3227H01F10/3254H01F10/3268H01F41/301H01F41/306H01F41/307H01L43/10H01L43/12
    • A method for manufacturing magnetic field detection devices comprises the operations of manufacturing a magneto-resistive element comprising regions with metallic conduction and regions with semi-conductive conduction. The method comprises the following operations: forming metallic nano-particles to obtain regions with metallic conduction; providing a semiconductor substrate; and applying metallic nano-particles to the porous semiconductor substrate to obtain a disordered mesoscopic structure. A magnetic device comprises a spin valve, which comprises a plurality of layers arranged in a stack which in turn comprises at least one free magnetic layer able to be associated to a temporary magnetisation (MT), a spacer layer and a permanent magnetic layer associated to a permanent magnetisation (MP). The spacer element is obtained by means of a mesoscopic structure of nanoparticles in a metallic matrix produced in accordance with the inventive method for manufacturing magneto-resistive elements.
    • 制造磁场检测装置的方法包括制造包含具有金属导电区域和具有半导电传导区域的磁阻元件的操作。 该方法包括以下操作:形成金属纳米颗粒以获得具有金属导电性的区域; 提供半导体衬底; 并将金属纳米颗粒施加到多孔半导体衬底以获得无序的介观结构。 磁性装置包括自旋阀,其包括以堆叠方式布置的多个层,所述多个层又包括至少一个能够与临时磁化(MT)相关的自由磁性层,间隔层和永久磁性层 永久磁化(MP)。 借助于根据用于制造磁阻元件的本发明方法制造的金属基体中的纳米颗粒的介观结构,获得间隔元件。