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11. 发明申请

US20130253563A1 Dilator Centering Device And Assemblies 有权
标题翻译：膨胀机定心装置和组件
公开(公告)号：US20130253563A1
公开(公告)日：2013-09-26
申请号：US13428901
申请日：2012-03-23
申请人： Mark Eberhardt , Hiroyoshi Ise , George Stern , Michael Miller , Yasutake Yamada , Husexin Fertac Bilge
发明人： Mark Eberhardt , Hiroyoshi Ise , George Stern , Michael Miller , Yasutake Yamada , Husexin Fertac Bilge
IPC分类号： A61M29/00
CPC分类号： A61M25/0097 , A61M25/01 , A61M29/00 , A61M39/22
摘要： The present technology is directed to a dilator centering device and assemblies and methods using same. In particular, a dilator centering device in accordance with the disclosed technology can be used with a sheath hub assembly. In one embodiment, a dilator centering device includes a lumen capable of receiving a dilator shaft and centering a dilator shaft with respect to the sheath hub as the dilator shaft enters the sheath hub. In one embodiment, the dilator centering device can be attached to the sheath hub during manufacturing or it can be attached at the use site. In one embodiment, the dilator centering device can be integrated with and non-removable from the sheath hub. The embodiments disclosed herein are illustrative and do not limit the scope and spirit of the disclosed technology.
摘要翻译：本技术涉及一种扩张器定中心装置及使用其的装配和方法。特别地，根据所公开的技术的扩张器定心装置可以与护套轮毂组件一起使用。在一个实施例中，扩张器定心装置包括能够接收扩张器轴并且当扩张器轴进入护套中心时使扩张器轴相对于护套毂居中的内腔。在一个实施例中，扩张器定心装置可以在制造期间附接到护套，或者可以在使用场所附接。在一个实施例中，扩张器定心装置可以与鞘毂集成在一起并且不可移除。本文公开的实施例是说明性的，并不限制所公开技术的范围和精神。

12. 发明授权

US08420478B2 Controlled localized defect paths for resistive memories 有权
标题翻译：电阻存储器的受控局部缺陷路径
公开(公告)号：US08420478B2
公开(公告)日：2013-04-16
申请号：US12610131
申请日：2009-10-30
申请人： Tony Chiang , Prashant Phatak , Michael Miller
发明人： Tony Chiang , Prashant Phatak , Michael Miller
IPC分类号： H01L21/8234
CPC分类号： H01L45/122 , G11C13/0007 , G11C2213/32 , G11C2213/55 , G11C2213/56 , H01L21/265 , H01L21/322 , H01L27/2463 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/165 , H01L45/1658 , H01L45/1675
摘要： Controlled localized defect paths for resistive memories are described, including a method for forming controlled localized defect paths including forming a first electrode forming a metal oxide layer on the first electrode, masking the metal oxide to create exposed regions and concealed regions of a surface of the metal oxide, and altering the exposed regions of the metal oxide to create localized defect paths beneath the exposed regions.
摘要翻译：描述了用于电阻存储器的受控局部缺陷路径，包括用于形成受控局部缺陷路径的方法，包括形成在第一电极上形成金属氧化物层的第一电极，掩蔽金属氧化物以产生暴露区域和隐藏区域金属氧化物，并且改变金属氧化物的暴露区域以在暴露区域下方产生局部缺陷路径。

13. 发明申请

US20120312899A1 PUSH BUTTON MECHANISM FOR SHOWERHEAD CONTROL 有权
标题翻译：用于淋浴控制的按钮机构
公开(公告)号：US20120312899A1
公开(公告)日：2012-12-13
申请号：US13154902
申请日：2011-06-07
申请人： Michael Miller , James Wu , Alex Wu , Cewen Yang
发明人： Michael Miller , James Wu , Alex Wu , Cewen Yang
IPC分类号： B05B1/32
CPC分类号： B05B1/18 , B05B1/1636
摘要： A shower head includes a push-button operated rotatable valve having a plurality of positions including; a first position in which the shower head allows water to flow to a first function, a second position radially offset from the first position in which the shower head allows water to flow to a second function, a third position radially offset from the first position and the second position and to the first position, in which the shower head allows water to flow trickle through the shower head.
摘要翻译：淋浴头包括具有多个位置的按钮操作的可旋转阀，包括：第一位置，其中淋浴喷头允许水流动到第一功能;第二位置，从第一位置径向偏移，淋浴头允许水流动到第二功能，第三位置径向偏离第一位置，第二位置和第一位置，其中淋浴头允许水流过淋浴头。

14. 发明申请

US20120244171A1 CYTOTOXIC BENZODIAZEPINE DERIVATIVES 有权
公开(公告)号：US20120244171A1
公开(公告)日：2012-09-27
申请号：US13397195
申请日：2012-02-15
申请人： Wei Li , Michael Miller , Nathan Fishkin , Ravi V.J. Chari
发明人： Wei Li , Michael Miller , Nathan Fishkin , Ravi V.J. Chari
IPC分类号： A61K31/5517 , C07K16/28 , A61K39/395 , A61P35/00 , A61P13/12 , A61P19/08 , A61P31/00 , A61P31/12 , A61P25/28 , A61P1/18 , C07D487/04 , A61P37/00
CPC分类号： C07K16/30 , A61K31/5517 , A61K45/06 , A61K47/545 , A61K47/6803 , A61K47/6849 , A61K47/6851 , A61K47/6867 , A61K2039/505 , C07D487/04 , C07D519/00 , C07K2317/24 , C07K2317/92 , C07K2317/94
摘要： The invention relates to novel benzodiazepine derivatives with antiproliferative activity and more specifically to novel benzodiazepine compounds of formula (I)-(VII). The invention also provides conjugates of the benzodiazepine compounds linked to a cell-binding agent. The invention further provides compositions and methods useful for inhibiting abnormal cell growth or treating a proliferative disorder in a mammal using the compounds or conjugates of the invention.
摘要翻译：本发明涉及具有抗增殖活性的新型苯并二氮杂衍生物，更具体地涉及式（I） - （VII）的新型苯并二氮杂化合物。本发明还提供了与细胞结合剂连接的苯并二氮杂类化合物的缀合物。本发明还提供了使用本发明的化合物或缀合物来抑制哺乳动物异常细胞生长或治疗增殖性病症的组合物和方法。

15. 发明申请

US20120238731A1 METHODS OF PREPARATION OF CONJUGATES 有权
标题翻译：共混物的制备方法
公开(公告)号：US20120238731A1
公开(公告)日：2012-09-20
申请号：US13397205
申请日：2012-02-15
申请人： Nathan Fishkin , Michael Miller , Wei Li , Rajeeva Singh
发明人： Nathan Fishkin , Michael Miller , Wei Li , Rajeeva Singh
IPC分类号： C07K16/46
CPC分类号： C07K16/30 , A61K31/5517 , A61K45/06 , A61K47/545 , A61K47/6803 , A61K47/6849 , A61K47/6851 , A61K47/6867 , A61K2039/505 , C07D487/04 , C07D519/00 , C07K2317/24 , C07K2317/92 , C07K2317/94
摘要： The present invention is directed to methods of preparing a conjugate of a cell-binding agent and a drug (such as a cytotoxic compound). The methods comprise the use of an imine reactive compound to enable efficient conjugations of cytotoxic compounds with cell binding agents.
摘要翻译：本发明涉及制备细胞结合剂和药物（例如细胞毒性化合物）的缀合物的方法。所述方法包括使用亚胺反应性化合物以使细胞毒性化合物与细胞结合剂的有效缀合。

16. 外观设计

USD667081S1 Showerhead 有权
公开(公告)号：USD667081S1
公开(公告)日：2012-09-11
申请号：US29403991
申请日：2011-10-13
申请人： Man Ki Yoo , Michael Miller , Geraint Krumpe
设计人： Man Ki Yoo , Michael Miller , Geraint Krumpe

17. 发明授权

US08101881B2 Arc resistant switchgear vertical exhaust system 有权
标题翻译：电弧开关柜垂直排气系统
公开(公告)号：US08101881B2
公开(公告)日：2012-01-24
申请号：US12420337
申请日：2009-04-08
申请人： Michael Miller , Abraham de la Cruz
发明人： Michael Miller , Abraham de la Cruz
IPC分类号： H01H33/02
CPC分类号： H02B13/025
摘要： An exhaust system for exhausting gases and molten debris caused by an electric arc within a switchgear. The exhaust system includes a switchgear having lower and upper compartments and an exhaust unit externally mounted to the switchgear. A wall panel of the switchgear includes blow out panels coinciding with openings in the lower compartment and corresponding ventilation flaps in a top surface of the exhaust unit to exhaust gas from the lower compartment out the blow out panels in a vertical direction, exiting through the flaps. The upper compartment includes ventilation flaps for exhausting gas in a vertical direction directly through the flaps and optionally through side-mounted blow out panels that communicate with the vertical vent path to the flaps in the top of the exhaust unit. A bus compartment in the exhaust unit includes a vent path to flaps in the top of the exhaust unit for exhausting gas produced by bus arcing.
摘要翻译：用于排出由开关设备内的电弧引起的气体和熔融碎屑的排气系统。排气系统包括具有下隔室和上隔室的开关装置和外部安装到开关装置的排气单元。开关柜的墙板包括与下隔室中的开口重合的吹出面板和排气单元的顶表面中的相应的通风翼，以从垂直方向排出来自下隔室的排气板，通过翼片。上隔室包括用于在垂直方向上直接排出气体的通风翼片，并且可选地通过与排气单元顶部的翼片垂直通风通道连通的侧面安装的吹出面板。排气单元中的总线室包括在排气单元顶部襟翼的通气路径，用于排出由总线电弧产生的气体。

18. 发明申请

US20120001148A1 STRESS-ENGINEERED RESISTANCE-CHANGE MEMORY DEVICE 有权
标题翻译：应力工程电阻变化记忆装置
公开(公告)号：US20120001148A1
公开(公告)日：2012-01-05
申请号：US13233937
申请日：2011-09-15
申请人： Michael Miller , Prashant Phatak , Tony Chiang
发明人： Michael Miller , Prashant Phatak , Tony Chiang
IPC分类号： H01L45/00 , H01L21/02 , H01L47/00
CPC分类号： H01L45/1233 , H01L23/5228 , H01L23/525 , H01L27/2409 , H01L45/08 , H01L45/146 , H01L45/1641 , H01L2924/0002 , H01L2924/00
摘要： A resistance-change memory device using stress engineering is described, including a first layer including a first conductive electrode, a second layer above the first layer including a resistive-switching element, a third layer above the second layer including a second conductive electrode, where a first stress is created in the switching element at a first interface between the first layer and the second layer upon heating the memory element, and where a second stress is created in the switching element at a second interface between the second layer and the third layer upon the heating. A stress gradient equal to a difference between the first stress and the second stress has an absolute value greater than 50 MPa, and a reset voltage of the memory element has a polarity relative to a common electrical potential that has a sign opposite the stress gradient when applied to the first conductive electrode
摘要翻译：描述了使用应力工程的电阻变化存储器件，包括第一层，包括第一导电电极，第一层上方的第二层，包括电阻式开关元件，第二层上方的第三层包括第二导电电极，在加热存储元件时在第一层和第二层之间的第一界面处在开关元件中产生第一应力，并且其中在第二层和第三层之间的第二界面处在开关元件中产生第二应力加热。等于第一应力和第二应力之间的差的应力梯度具有大于50MPa的绝对值，并且存储元件的复位电压具有相对于具有与应力梯度相反的符号的公共电位的极性，施加到第一导电电极

19. 发明授权

US08062918B2 Surface treatment to improve resistive-switching characteristics 有权
标题翻译：表面处理提高电阻开关特性
公开(公告)号：US08062918B2
公开(公告)日：2011-11-22
申请号：US12345576
申请日：2008-12-29
申请人： Michael Miller , Prashant Phatak , Tony Chiang , Xiying Chen , April Schricker , Tanmay Kumar
发明人： Michael Miller , Prashant Phatak , Tony Chiang , Xiying Chen , April Schricker , Tanmay Kumar
IPC分类号： H01L21/00
CPC分类号： H01L45/16 , H01L21/265 , H01L21/31155 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/165
摘要： This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution.
摘要翻译：本公开提供了制造半导体器件层和相关联的存储单元结构的方法。通过进行半导体器件层的表面处理（例如离子轰击）以产生具有有意深度分布的缺陷，可以创建具有更一致的电参数的多层存储单元。例如，在电阻式开关存储单元中，可以获得设定和复位电压的更紧密的分配和较低的成形电压，从而提高器件的产量和可靠性。在至少一个实施例中，选择深度轮廓以调制缺陷的类型及其对被轰击的金属氧化物层的电性能的影响并增强均匀的缺陷分布。

20. 发明申请

US20110243178A1 HIGH POWER VCSEL WITH IMPROVED SPATIAL MODE 审中-公开
标题翻译：具有改进的空间模式的高功率VCSEL
公开(公告)号：US20110243178A1
公开(公告)日：2011-10-06
申请号：US13133740
申请日：2009-12-01
申请人： Johanna S. Kolb , Michael Miller , Sebastien Winterstein , Uwe Ernst
发明人： Johanna S. Kolb , Michael Miller , Sebastien Winterstein , Uwe Ernst
IPC分类号： H01S3/08
CPC分类号： B41J2/451 , H01S5/0207 , H01S5/0656 , H01S5/18347 , H01S5/18388 , H01S5/423
摘要： The present invention relates to a VCSEL device comprising an optical gain medium (8) arranged between a first DBR (9) and a second DBR (7). The first and the second DBR form a laser cavity and are designed to allow self-contained lasing in the laser cavity, said second DBR (7) being partially transparent for laser radiation resonating in the laser cavity. An optical element is arranged on a side of the second DBR (7) outside of the laser cavity on the optical axis of the laser cavity. The optical element has a concave surface (5) facing the second DBR (7) and being designed to reflect a portion of laser radiation emitted through the second DBR (7) back into the laser cavity. The ratio R/d of the radius of curvature R of the concave surface (5) and the distance d between the concave surface (5) and the gain medium (8) is in the range between 1 and 2. With the proposed VCSEL device a high power output with an improved mode distribution and mode stabilization is achieved.
摘要翻译：本发明涉及一种VCSEL设备，其包括布置在第一DBR（9）和第二DBR（7）之间的光学增益介质（8）。第一和第二DBR形成激光腔并被设计成允许在激光腔中自包含激光，所述第二DBR（7）对于在激光腔中共振的激光辐射部分透明。光学元件布置在第二DBR（7）的位于激光腔的光轴外侧的一侧。光学元件具有面向第二DBR（7）的凹面（5），并被设计成将通过第二DBR（7）发射的激光辐射的一部分反射回激光腔。凹面（5）的曲率半径R与凹面（5）与增益介质（8）的距离d的比值R / d在1〜2的范围内。利用所提出的VCSEL装置实现了具有改进的模式分布和模式稳定的高功率输出。

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