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    • 16. 发明授权
    • Cooking stoves
    • 烹饪炉
    • US09219213B2
    • 2015-12-22
    • US11909823
    • 2006-03-27
    • Paul Van Der SluisSudhakaran Subramanian
    • Paul Van Der SluisSudhakaran Subramanian
    • H01L35/00F24B1/20F24B5/02
    • H01L35/00F24B1/202F24B5/021
    • A solid fuel, portable stove reduces smoke emissions and provides for a high temperature of combustion in a compact and easily manufacturable design. A main housing (11) comprises a combustion chamber (12) for containing fuel for combustion and a fan (50) configured to force air into the combustion chamber. A rechargeable electrical power source (40) is used for driving the fan (50) and a thermoelectric element (31) provides power to the fan and to the rechargeable power source. In one embodiment, the thermoelectric element also provides excess output power to a connected device (D) such as a low voltage white light emitting diode, thereby providing a self illuminating, rechargeable stove which is suitable for sunset or early evening cooking.
    • 固体燃料便携式炉灶减少了烟雾排放,并且在紧凑且容易制造的设计中提供高温燃烧。 主壳体(11)包括用于燃烧燃料的燃烧室(12)和用于迫使空气进入燃烧室的风扇(50)。 可再充电电源(40)用于驱动风扇(50),并且热电元件(31)向风扇和可再充电电源供电。 在一个实施例中,热电元件还向连接的设备(D)(例如低电压白色发光二极管)提供过量的输出功率,从而提供适合于日落或傍晚烹饪的自发照明的充电炉。
    • 19. 发明申请
    • Ferroelectric device and method of manufacturing such a device
    • 铁电元件及其制造方法
    • US20050269611A1
    • 2005-12-08
    • US10524981
    • 2003-07-10
    • Paul Van Der SluisMartijn LankhorstRonald Wolf
    • Paul Van Der SluisMartijn LankhorstRonald Wolf
    • H01L27/10G11C11/22G11C11/36H01L21/02H01L21/8246H01L27/105H01L27/115H01L29/76H01L49/02
    • H01L27/11502G11C11/22H01L27/11507H01L28/55
    • The invention relates to a ferroelectric device (10) with a body (11) comprising a substrate (1) and a ferroelectric layer (2) provided with a connection conductor (3) on a side facing away from the substrate (1), which ferroelectric layer contains an oxygen-free ferroelectric material (2) and is used to form an active electrical element (4), in particular a memory element (4). Such a device forms an attractive non-volatile memory device. In accordance with the invention, a conductive layer (5) is present between the substrate (1) and the ferroelectric layer (2), which conductive layer forms a further connection conductor (5) of the ferroelectric layer (2), and the active electrical element (4) is obtained as a result of the fact that the ferroelectric layer (2) forms a Schottky junction with at least one of the connection conductors (3, 5). In practice it has been found that such a device (10) comprises a well-performing memory element (4) that can be readily formed on a, preferably monocrystalline, silicon substrate (1). Preferably, the device (10) further comprises a field effect transistor (6), and the element (4) is preferably situated above the source or drain region (7) of the transistor (6). The active element also may function as a diode.
    • 本发明涉及具有主体(11)的铁电体装置(10),该主体包括基板(1)和在远离基板(1)的一侧设置有连接导体(3)的铁电体层(2) 铁电层含有无氧铁电材料(2),用于形成有源电子元件(4),特别是存储元件(4)。 这种装置形成有吸引力的非易失性存储装置。 根据本发明,在基板(1)和铁电体层(2)之间存在导电层(5),该导电层形成铁电层(2)的另外的连接导体(5),并且活性层 作为铁电层(2)与至少一个连接导体(3,5)形成肖特基结的事实,获得电气元件(4)。 实际上已经发现,这种器件(10)包括能够容易地形成在优选单晶硅衬底(1)上的良好的性能良好的存储元件(4)。 优选地,器件(10)还包括场效应晶体管(6),并且元件(4)优选地位于晶体管(6)的源极或漏极区域(7)的上方。 有源元件也可以用作二极管。