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11. 发明申请

US20050067615A1 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050067615A1
公开(公告)日：2005-03-31
申请号：US10962492
申请日：2004-10-13
申请人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
发明人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
IPC分类号： H01L29/68 , H01L29/06 , H01L29/08 , H01L29/12 , H01L29/737 , H01L31/0328
CPC分类号： B82Y10/00 , H01L29/0817 , H01L29/127 , H01L29/7371
摘要： The present invention relates to a semiconductor device comprising a substrate (101); a semiconductor multi-layered structure formed on the substrate (101); the semiconductor multi-layered structure comprising an emitter layer (102), a base layer (105), and a collector layer (107), each composed of a group III-V n-type compound semiconductor and layered in this order; a quantum dot barrier layer (103) disposed between the emitter layer (102) and the base layer (105); a collector electrode (110), a base electrode (111) and an emitter electrode (112) connected to the collector layer (107), the base layer (105) and the emitter layer (102), respectively; the quantum dot barrier layer (103) comprising a plurality of quantum dots (103c); the quantum dots (103) being sandwiched between first and second barrier layers (103a, 103d) from the emitter layer side and the base layer side, respectively; each of the quantum dots (103c) having a convex portion that is convex to the base layer (105); a base layer (105) side interface (d1) in the second barrier layer (103d), and collector layer side and emitter layer side interfaces (d2, d3) in the base layer (105); the interfaces having curvatures (d12, d22, d23) that are convex to the collector layer (107) corresponding to the convex portions of the quantum dots (103c).
摘要翻译：本发明涉及一种包括衬底（101）的半导体器件; 形成在所述基板（101）上的半导体多层结构; 所述半导体多层结构包括由III-V族N型化合物半导体构成的发射极层（102），基极层（105）和集电极层（107），并且按顺序层叠; 设置在发射极层（102）和基极层（105）之间的量子点势垒层（103）; 分别与集电极层（107）连接的集电极（110），基极（111）和发射极（112），基极层（105）和发射极层（102）所述量子点势垒层（103）包括多个量子点（103c）; 量子点（103）分别从发射极侧和基极侧夹在第一和第二阻挡层（103a，103d）之间; 每个量子点（103c）具有与基底层（105）凸起的凸部; 第二阻挡层（103d）中的基底层（105）侧界面（d1），以及基底层（105）中的集电极层侧和发射极层侧界面（d2，d3）具有对应于量子点（103c）的凸部的与集电体层（107）凸起的曲率（d12，d22，d23）的界面。

12. 发明授权

US07414261B2 Ballistic semiconductor device 失效
标题翻译：弹道半导体器件
公开(公告)号：US07414261B2
公开(公告)日：2008-08-19
申请号：US10542063
申请日：2004-04-14
申请人： Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
发明人： Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
IPC分类号： H01L29/06
CPC分类号： H01L29/7371 , H01L29/2003 , H01L29/7376
摘要： A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than that of the base layer (305), and a collector barrier layer (306) interposed between the base layer (305) and the collector layer (307) and having a band gap larger than that of the base layer (305), and operates at 10 GHz or higher.
摘要翻译：本发明的弹道半导体器件包括n型发射极层（102），由n型InGaN制成的基极层（305），n型集电极层（307），发射极阻挡层（103）在发射极层（102）和基极层（305）之间具有比基底层（305）的带隙大的带隙的集电极阻挡层（306），并且位于基极层（305）和集电极层（307），并且具有比基底层（305）的带隙大的带隙，并且在10GHz或更高频率下工作。

13. 发明授权

US06861679B2 Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor 失效
标题翻译：基于砷化镓铟的外延晶片，使用晶片的异质场效应晶体管，以及制造该异质场效应晶体管的方法
公开(公告)号：US06861679B2
公开(公告)日：2005-03-01
申请号：US10817035
申请日：2004-04-05
申请人： Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
发明人： Nobuyuki Otsuka , Koichi Mizuno , Shigeo Yoshii , Asamira Suzuki
IPC分类号： H01L29/812 , H01L21/335 , H01L21/338 , H01L29/20 , H01L29/778 , H01L31/0328
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/201 , H01L29/66462 , H01L29/7784
摘要： A hetero field effect transistor according to the present invention comprises an InP substrate, a channel layer provided on the InP substrate with a buffer layer disposed between the InP substrate and the channel layer, a spacer layer constituted by a semiconductor having a band gap larger than that of the channel layer formed to hetero-join to the channel layer, and a carrier supply layer formed to be adjacent to the spacer layer, wherein the channel layer comprises a predetermined semiconductor layer constituted by a compound semiconductor represented by a formula GaxIn1−xNyA1−y in which A is As or Sb, composition x satisfies 0≦x≦0.2, and composition y satisfies 0.03≦y≦0.10.
摘要翻译：根据本发明的异质场效应晶体管包括InP衬底，设置在InP衬底上的沟道层，其中缓冲层设置在InP衬底和沟道层之间，间隔层由具有大于形成为与沟道层异质连接的沟道层的沟道层和与间隔层相邻形成的载流子供给层，其中沟道层包括由式GaxIn1-xNyA1表示的化合物半导体构成的预定半导体层 -Y，其中A为As或Sb，组成x满足0 <= x <= 0.2，组成y满足0.03 <= Y＆LE; 0.10。

14. 发明授权

US5960257A Method distributed feedback semiconductor laser for fabricating 失效
标题翻译：制造分布式反馈半导体激光器的方法
公开(公告)号：US5960257A
公开(公告)日：1999-09-28
申请号：US933707
申请日：1997-09-19
申请人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
发明人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： H01L21/00 , H01S5/12 , H01S5/34
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/2022 , H01S5/3403 , H01S5/3428 , H01S5/3434 , Y10S148/095
摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.
摘要翻译：一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，其设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域。光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

15. 发明授权

US5568501A Semiconductor laser and method for producing the same 失效
标题翻译：半导体激光器及其制造方法
公开(公告)号：US5568501A
公开(公告)日：1996-10-22
申请号：US331939
申请日：1994-10-31
申请人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
发明人： Nobuyuki Otsuka , Masahiro Kitoh , Masato Ishino , Yasushi Matsui
IPC分类号： H01L29/15 , H01S5/22 , H01S5/227 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01L29/155 , H01S5/227 , H01S5/2205 , H01S5/2224 , H01S5/2226 , H01S5/2275 , H01S5/34306 , H01S5/34313 , H01S5/3434 , Y10S148/095
摘要： The semiconductor laser of the invention includes: a semiconductor substrate of a first conductivity type; a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer; and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, wherein the current blocking portion has a first current blocking layer of a second conductivity type, and a second current blocking layer of the first conductivity type formed on the first current blocking layer, the first current blocking layer includes a low-concentration region having a relatively low concentration of an impurity of the second conductivity type, and a high-concentration region having an impurity concentration which is higher than that of the low-concentration region, and the low-concentration region is provided at a position closer to the stripe-shaped multilayer structure than the high-concentration region.
摘要翻译：本发明的半导体激光器包括：第一导电类型的半导体衬底; 形成在所述半导体衬底上的条形多层结构，所述条形多层结构包括有源层; 以及在所述条形多层结构的两侧形成在所述半导体衬底上的电流阻挡部分，其中所述电流阻挡部分具有第二导电类型的第一电流阻挡层和形成所述第一导电类型的第二电流阻挡层在第一电流阻挡层上，第一电流阻挡层包括具有相对低浓度的第二导电类型的杂质的低浓度区域和具有高于低浓度杂质浓度的高浓度区域浓度区域，并且低浓度区域设置在比高浓度区域更靠近条形多层结构的位置。

16. 发明授权

US5539766A Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US5539766A
公开(公告)日：1996-07-23
申请号：US293987
申请日：1994-08-18
申请人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
发明人： Masato Ishino , Masahiro Kitoh , Nobuyuki Otsuka , Yasushi Matsui
IPC分类号： H01L21/00 , H01S5/12 , H01S5/34 , H01S3/08
CPC分类号： H01S5/1228 , B82Y20/00 , H01S5/2022 , H01S5/3403 , H01S5/3428 , H01S5/3434 , Y10S148/095
摘要： A distributed feedback semiconductor laser which includes a semiconductor substrate of a first conductive type; a semiconductor multi-layer structure provided on the semiconductor substrate and including an active layer for generating laser light; and a gain-coupled diffraction grating provided between the semiconductor substrate and the semiconductor multi-layer structure. The diffraction grating includes a plurality of curved projections periodically arranged at a surface of the semiconductor substrate and a quantum well light absorption layer for covering the plurality of curved projections. The quantum well light absorption layer includes a light absorption area having a first thickness at each border between two adjacent curved projections and a non-light absorption area having a second thickness which is smaller than the first thickness at a top of each of the curved projections. The light absorption area has a band gap which is narrower than a band gap of the active layer, and the non-light absorption area has a band gap which is wider than the band gap of the active layer.
摘要翻译：一种分布式反馈半导体激光器，包括第一导电类型的半导体衬底; 半导体多层结构，设置在所述半导体基板上并且包括用于产生激光的有源层; 以及设置在半导体衬底和半导体多层结构之间的增益耦合衍射光栅。衍射光栅包括周期性地布置在半导体衬底的表面上的多个弯曲突起和用于覆盖多个弯曲突起的量子阱光吸收层。量子阱光吸收层包括在两个相邻弯曲突起之间的每个边界处具有第一厚度的光吸收区域和具有比每个弯曲突起的顶部处的第一厚度小的第二厚度的非光吸收区域。光吸收区域具有比有源层的带隙窄的带隙，并且非光吸收区域具有比有源层的带隙宽的带隙。

17. 发明授权

US07323725B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07323725B2
公开(公告)日：2008-01-29
申请号：US10962492
申请日：2004-10-13
申请人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
发明人： Shigeo Yoshii , Nobuyuki Otsuka , Koichi Mizuno , Asamira Suzuki
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： B82Y10/00 , H01L29/0817 , H01L29/127 , H01L29/7371
摘要： The present invention relates to a semiconductor device having a multi-layered structure comprising an emitter layer, a base layer, and a collector layer, each composed of a group III-V n-type compound semiconductor in this order; a quantum dot barrier layer disposed between the emitter layer and the base layer; a collector electrode, a base electrode and the emitter layer all connected to an emitter electrode; the quantum dot barrier layer having a plurality of quantum dots being sandwiched between first and second barrier layers from the emitter layer side and the base layer side, respectively and each having a portion that is convex to the base layer; a base layer side interface in the second barrier layer, and collector layer side and emitter layer side interfaces in the base layer having curvatures that are convex to the collector layer corresponding to the convex portions of the quantum dots.
摘要翻译：本发明涉及一种具有多层结构的半导体器件，该多层结构包括依次由III-V族n型化合物半导体构成的发射极层，基极层和集电极层; 设置在发射极层和基极层之间的量子点势垒层; 集电极，基极和发射极层全部连接到发射极; 所述量子点势垒层分别具有从所述发射极层侧和所述基极侧侧夹在第一和第二阻挡层之间的多个量子点，并且各自具有与所述基极层相对的部分。第二阻挡层中的基底层侧界面，基底层中的集电极层侧发射极侧接合具有对应于量子点的凸部的集电极层的曲率的曲率。

18. 发明授权

US06921678B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US06921678B2
公开(公告)日：2005-07-26
申请号：US10434063
申请日：2003-05-09
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/223
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

19. 发明授权

US06858877B2 Nitride semiconductor, method for manufacturing the same and nitride semiconductor device 有权
标题翻译：氮化物半导体，其制造方法和氮化物半导体器件
公开(公告)号：US06858877B2
公开(公告)日：2005-02-22
申请号：US10352256
申请日：2003-01-28
申请人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura , Nobuyuki Otsuka
发明人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura , Nobuyuki Otsuka
IPC分类号： H01L21/20 , H01L33/00 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01S5/34333
摘要： A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.
摘要翻译：在由氮化镓（GaN）制成的基板上形成由至少含有铝的氮化物半导体构成的面形成层。在小面形成层的表面上形成有相对于C面倾斜的面面，并且从倾斜面面侧向生长选择性生长层。结果，选择生长层可以使由n型AlGaN制成的n型包覆层基本上晶格匹配并在选择性生长层上生长。例如，可以通过晶体生长获得没有产生裂纹的激光结构。

20. 发明授权

US4578048A Slidable type constant velocity universal joint 失效
标题翻译：滑动式等速万向节
公开(公告)号：US4578048A
公开(公告)日：1986-03-25
申请号：US236914
申请日：1981-07-06
申请人： Seiichi Hirai , Akira Nishizawa , Nobuyuki Otsuka
发明人： Seiichi Hirai , Akira Nishizawa , Nobuyuki Otsuka
IPC分类号： G01N27/00 , F16D3/20 , F16D3/205 , G01N1/22 , G01N25/64 , G01N27/12 , G01N33/00
CPC分类号： F16D3/2055 , F16D2003/2026 , Y10S464/905
摘要： A constant velocity universal joint of the type having rollers carried by radial trunnions of an inner rotary member and which are received in axial grooves in an outer rotary member, including abutment members which engage abutment surfaces of the grooves and which prevent locking engagement of the rollers with both of the opposed walls of the axial grooves.
摘要翻译：一种等速万向接头，其具有由内部旋转构件的径向轴颈承载并且被容纳在外部旋转构件中的轴向槽中的辊，其包括抵接构件，其抵接凹槽的邻接表面并且防止辊的锁定接合与轴向凹槽的两个相对的壁。

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