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11. 发明授权

US5990531A Methods of making high voltage GaN-AlN based semiconductor devices and semiconductor devices made 失效
标题翻译：制造高电压GaN-AlN基半导体器件和半导体器件的方法
公开(公告)号：US5990531A
公开(公告)日：1999-11-23
申请号：US968680
申请日：1997-11-12
申请人： Nikhil R. Taskar , Piotr M. Mensz , Babar A. Khan
发明人： Nikhil R. Taskar , Piotr M. Mensz , Babar A. Khan
IPC分类号： H01L29/20 , H01L21/285 , H01L21/335 , H01L29/10 , H01L29/51 , H01L29/78 , H01L29/786 , H01L29/80 , H01L29/76
CPC分类号： H01L29/518 , H01L21/28587 , H01L21/28593 , H01L29/1079 , H01L29/66462 , H01L29/78681 , H01L29/802 , H01L29/2003
摘要： The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.
摘要翻译：本发明涉及一种用于制造半导体器件的技术，其中p型GaN形成在衬底上并且半导体AlN形成在p型GaN上，其中n型GaN形成在p型GaN上并部分地位于AlN之下。通过该技术形成了高效率的高功率和高电压半导体器件，其具有与硅型半导体更好或相似的特性。

12. 发明申请

US20140008697A1 Siloxane Compositions Including Titanium Dioxide Nanoparticles Suitable For Forming Encapsulants 审中-公开
标题翻译：包含二氧化钛纳米颗粒的硅氧烷组合物适用于形成密封剂
公开(公告)号：US20140008697A1
公开(公告)日：2014-01-09
申请号：US13991835
申请日：2011-12-06
申请人： Brian R. Harkness , Ann W. Norris , Shellene K. Thurston , Vishal Chhabra , Bharati S. Kulkarni , Nikhil R. Taskar
发明人： Brian R. Harkness , Ann W. Norris , Shellene K. Thurston , Vishal Chhabra , Bharati S. Kulkarni , Nikhil R. Taskar
IPC分类号： H01L33/56
CPC分类号： H01L33/56 , C08G77/045 , C08G77/12 , C08G77/20 , C08L83/04 , H01L23/296 , H01L2924/0002 , H01L2924/00
摘要： A composition includes an organopolysiloxane component (A) comprising at least one of a disiloxane, a trisiloxane, and a tetrasiloxane, and has an average of at least two alkenyl groups per molecule. The composition further includes an organohydrogensiloxane component (B) having an average of at least two silicon-bonded hydrogen atoms per molecule. Components (A) and (B) each independently have at least one of an alkyl group and an aryl group and each independently have a number average molecular weight less than or equal to 1500 (g/mole). The composition yet further includes a catalytic amount of a hydrosilylation catalyst component (C), and titanium dioxide (TiO2) nanoparticles (D). The composition has a molar ratio of alkyl groups to aryl groups ranging from 1:0.25 to 1:3.0. A product of the present invention is the reaction product of the composition, which may be used to make a light emitting diode.
摘要翻译：组合物包括包含二硅氧烷，三硅氧烷和四硅氧烷中的至少一种的有机聚硅氧烷组分（A），并且每分子平均具有至少两个烯基。组合物还包括每分子平均具有至少两个硅键合的氢原子的有机氢硅氧烷组分（B）。组分（A）和（B）各自独立地具有烷基和芳基中的至少一个，并且各自独立地具有小于或等于1500（g / mol）的数均分子量。该组合物还包括催化量的氢化硅烷化催化剂组分（C）和二氧化钛（TiO 2）纳米颗粒（D）。该组合物的烷基与芳基的摩尔比范围为1:0.25至1:3.0。本发明的产品是可用于制造发光二极管的组合物的反应产物。

13. 发明授权

US06734465B1 Nanocrystalline based phosphors and photonic structures for solid state lighting 失效
标题翻译：用于固态照明的纳米晶体荧光体和光子结构
公开(公告)号：US06734465B1
公开(公告)日：2004-05-11
申请号：US10299410
申请日：2002-11-19
申请人： Nikhil R. Taskar , Rameshwar Nath Bhargava
发明人： Nikhil R. Taskar , Rameshwar Nath Bhargava
IPC分类号： H01L2715
CPC分类号： H01L33/502 , H01L33/44 , H01L33/54
摘要： A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The transparent matrix may include nanoparticles for matching the index of refraction of the material of the matrix to that of the light generating phosphors. The matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes. The phosphors dispersed in the matrix are preferably nanocrystalline.
摘要翻译：在LED的激发下由磷光体产生“白”光的光子结构。光子结构安装LED和其中分散有荧光体的光学透明矩阵，其将在LED的辐射的激发下发光。透明矩阵可以包括纳米粒子，用于将矩阵材料的折射率与发光荧光体的折射率进行匹配。基质材料可以容易地通过模塑形成并形成为包括用于聚焦发射光的透镜的各种形状。大量的光子结构可以被布置在基板上以提供均匀的照明或其它目的。分散在基质中的磷光体优选是纳米晶体。

14. 发明授权

US06452184B1 Microchannel high resolution x-ray sensor having an integrated photomultiplier 失效
标题翻译：具有集成光电倍增管的微通道高分辨率x射线传感器
公开(公告)号：US06452184B1
公开(公告)日：2002-09-17
申请号：US09385995
申请日：1999-08-30
申请人： Nikhil R. Taskar , John Victor D. Veliadis , Vishal Chhabra , Bharail Kulkarni , Neeta Pandit , Rameshwar Nath Bhargava , Roger Delano
发明人： Nikhil R. Taskar , John Victor D. Veliadis , Vishal Chhabra , Bharail Kulkarni , Neeta Pandit , Rameshwar Nath Bhargava , Roger Delano
IPC分类号： G01T120
CPC分类号： G01T1/20 , G21K2004/06 , G21K2004/12
摘要： A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. A photomultiplier, which may be microchannel based, is integrated with the X-ray detector so as to provide an enhanced output for use with low level X-ray of for cine or fluoroscopy applications. The walls of the microchannels and/or the substrate surfaces include dielectric stack based light reflective coatings.
摘要翻译：用于将诸如X射线的辐射转换成可见光的复合荧光屏。屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了具有大约10微米或更小的直径的多个紧密间隔的微通道。沉积在每个微通道内的是在辐射作用时发光的多种荧光体。可以将基于微通道的光电倍增管与X射线检测器集成，以提供用于电影或荧光透视应用的低水平X射线的增强输出。微通道和/或衬底表面的壁包括基于电介质叠层的光反射涂层。

15. 发明授权

US5227328A Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations 失效
标题翻译：制备具有高受主浓度的II-VI半导体外延层的方法
公开(公告)号：US5227328A
公开(公告)日：1993-07-13
申请号：US851452
申请日：1992-03-16
申请人： Babar A. Khan , Nikhil R. Taskar
发明人： Babar A. Khan , Nikhil R. Taskar
IPC分类号： H01L21/38
CPC分类号： H01L21/38 , Y10S148/064 , Y10S438/902
摘要： Epitaxial layers of II-VI semiconductors in-situ doped with high concentrations of a stable acceptor-type impurity and capped with a diffusion-limiting layer, when subjected to a rapid thermal anneal at a temperature between 700 and 950 degrees C., exhibit a high conversion of the impurities to acceptors, sufficient to render the layers p-type.
摘要翻译：原位掺杂高浓度稳定受主型杂质并用扩散限制层封端的II-VI半导体的外延层当在700和950摄氏度之间的温度下进行快速热退火时，表现出杂质转化为受体的高转化率，足以使层p型。

16. 发明授权

US07119372B2 Flip-chip light emitting diode 失效
标题翻译：倒装芯片发光二极管
公开(公告)号：US07119372B2
公开(公告)日：2006-10-10
申请号：US10693126
申请日：2003-10-24
申请人： Edward B. Stokes , Mark P. D'Evelyn , Stanton E. Weaver , Peter M. Sandvik , Abasifreke U. Ebong , Xian-an Cao , Steven F. LeBoeuf , Nikhil R. Taskar
发明人： Edward B. Stokes , Mark P. D'Evelyn , Stanton E. Weaver , Peter M. Sandvik , Abasifreke U. Ebong , Xian-an Cao , Steven F. LeBoeuf , Nikhil R. Taskar
IPC分类号： H01L27/15
CPC分类号： H01L33/405 , H01L33/387 , H01L2933/0083
摘要： A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).
摘要翻译：倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化以限定装置台面（30,30'，30“）。反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触，设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

17. 发明授权

US06885004B2 High resolution tiled microchannel storage phosphor based radiation sensor 失效
标题翻译：高分辨率平铺微通道存储荧光粉基辐射传感器
公开(公告)号：US06885004B2
公开(公告)日：2005-04-26
申请号：US10073702
申请日：2002-02-11
申请人： Nikhil R. Taskar , Rameshwar Nath Shargava
发明人： Nikhil R. Taskar , Rameshwar Nath Shargava
IPC分类号： G01T1/20 , G01T1/29 , G21K4/00
CPC分类号： G01T1/2921 , G01T1/20 , G21K4/00 , G21K2004/06 , G21K2004/12 , H01J2231/50036 , H01J2231/5016
摘要： X-ray imaging screens utilizing phosphors disposed in microchannels disposed in a plate. This application relates to the “tiling” of such microchannel plates to form a larger imaging area and to the use of “storage phosphors” in the microchannel plates which enables the phosphors to be read out after exposure and from the side exposed to the X-rays. The storage phosphor screens of the present invention provide significantly increased resolution than the prior art storage phosphor screens.
摘要翻译：使用设置在板中的微通道中的荧光体的X射线成像屏幕。本申请涉及这种微通道板的“平铺”，以形成更大的成像区域，并且在微通道板中使用“储存磷光体”，这使得在曝光之后和从暴露于X射线的一侧可以读出荧光体。射线本发明的存储荧光屏提供比现有技术的存储荧光屏显着增加的分辨率。

18. 发明授权

US06300640B1 Composite nanophosphor screen for detecting radiation having optically reflective coatings 失效
标题翻译：用于检测具有光学反射涂层的辐射的复合纳米荧光屏
公开(公告)号：US06300640B1
公开(公告)日：2001-10-09
申请号：US09197248
申请日：1998-11-20
申请人： Rameshwar Nath Bhargava , Nikhil R. Taskar , Vishal Chhabra , John Victor D. Veliadis
发明人： Rameshwar Nath Bhargava , Nikhil R. Taskar , Vishal Chhabra , John Victor D. Veliadis
IPC分类号： G01T120
CPC分类号： G01T1/20 , G21K2004/06 , G21K2004/12
摘要： A composite phosphor screen for converting radiation, such as X-rays, into visible light. The screen includes a planar surface, which can be formed from glass, silicon or metal, which has etched therein a multiplicity of closely spaced microchannels having diameters of the order of 10 microns or less. Deposited within each of the microchannels is a multiplicity of phosphors which emit light when acted upon by radiation. The walls of the microchannels and/or the substrate surfaces include light reflective coatings so as to reflect the light emitted by the phosphors to the light collecting devices, such as film or an electronic detector. The coatings can be either radiation transparent or filtering/attenuating depending on the particular application.
摘要翻译：用于将诸如X射线的辐射转换成可见光的复合荧光屏。屏幕包括可以由玻璃，硅或金属形成的平坦表面，其在其中蚀刻了具有大约10微米或更小的直径的多个紧密间隔的微通道。沉积在每个微通道内的是在辐射作用时发光的多种荧光体。微通道和/或衬底表面的壁包括光反射涂层，以将由磷光体发射的光反射到诸如膜或电子检测器的光收集装置。根据具体应用，涂层可以是辐射透明的或过滤/衰减的。

19. 发明授权

US5915164A Methods of making high voltage GaN-A1N based semiconductor devices 失效
标题翻译：制造高电压GaN-AlN基半导体器件的方法
公开(公告)号：US5915164A
公开(公告)日：1999-06-22
申请号：US583148
申请日：1995-12-28
申请人： Nikhil R. Taskar , Piotr M. Mensz , Babar A. Khan
发明人： Nikhil R. Taskar , Piotr M. Mensz , Babar A. Khan
IPC分类号： H01L29/20 , H01L21/285 , H01L21/335 , H01L29/10 , H01L29/51 , H01L29/78 , H01L29/786 , H01L29/80 , H01L21/00
CPC分类号： H01L29/518 , H01L21/28587 , H01L21/28593 , H01L29/1079 , H01L29/66462 , H01L29/78681 , H01L29/802 , H01L29/2003
摘要： The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.
摘要翻译：本发明涉及一种用于制造半导体器件的技术，其中p型GaN形成在衬底上并且半导体AlN形成在p型GaN上，其中n型GaN形成在p型GaN上并部分地位于AlN之下。通过该技术形成了高效率的高功率和高电压半导体器件，其具有与硅型半导体更好或相似的特性。

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