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11. 发明申请

US20050258542A1 Use of a porous dielectric material as an etch stop layer for non-porous dielectric films 有权
标题翻译：使用多孔电介质材料作为非多孔介电膜的蚀刻停止层
公开(公告)号：US20050258542A1
公开(公告)日：2005-11-24
申请号：US10845718
申请日：2004-05-14
申请人： Nicholas Fuller , Timothy Dalton
发明人： Nicholas Fuller , Timothy Dalton
IPC分类号： H01L21/768 , H01L23/48 , H01L23/532
CPC分类号： H01L21/76835 , H01L21/76807 , H01L21/76808 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Interconnect structures possessing a non-porous (dense) low-k organosilicate glass (OSG) film utilizing a porous low-k OSG film as an etch stop layer or a porous low-k OSG film using a non-porous OSG film as a hardmask for use in semiconductor devices are provided herein. The novel interconnect structures are capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed and also because of the relatively uniform line heights made feasible by these unique and seemingly counterintuitive features. The present invention also provides a fluorocarbon-based dual damascene etch process that achieves selective etching of a dense low-k OSG films relative to that of a porous low-k OSG film owing to the tunability of the gas-phase fluorine:carbon ratio (gas dissociation) and ion current below a critical threshold and given the larger carbon content of the porous film relative to that of the dense film.
摘要翻译：具有使用多孔低k OSG膜作为蚀刻停止层的无孔（致密）低k有机硅酸盐玻璃（OSG）膜的互连结构或使用无孔OSG膜作为硬掩模的多孔低k OSG膜用于半导体器件中。新颖的互连结构能够提供改进的器件性能，功能和可靠性，这是由于与传统采用的叠层相比，堆叠的有效介电常数降低，并且还因为这些独特且看似违反直觉的特征使得线的高度相对均匀。本发明还提供了一种基于碳氟化合物的双镶嵌蚀刻工艺，由于气相氟：碳比的可调性，实现了相对于多孔低k OSG膜的致密低k OSG膜的选择性蚀刻（气体离解）和离子电流低于临界阈值，并且给出多孔膜相对于致密膜的碳含量较大。

12. 发明申请

US20070161226A1 Dual damascene process flow enabling minimal ULK film modification and enhanced stack integrity 失效
标题翻译：双镶嵌工艺流程可实现极少的ULK膜修饰和增强的堆叠完整性
公开(公告)号：US20070161226A1
公开(公告)日：2007-07-12
申请号：US11328981
申请日：2006-01-10
申请人： Timothy Dalton , Nicholas Fuller , Satyanarayana Nitta
发明人： Timothy Dalton , Nicholas Fuller , Satyanarayana Nitta
IPC分类号： H01L21/4763
CPC分类号： H01L21/76801 , H01L21/76808 , H01L21/76829
摘要： Interconnect structures possessing an organosilicate glass interlayer dielectric material with minimal stoichiometeric modification and optionally an intact organic adhesion promoter for use in semiconductor devices are provided herein. The interconnect structure is capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed because of the use of a sacrificial polymeric material deposited onto the dielectric and optional organic adhesion promoter during the barrier open step done prior to ashing the patterning material. This sacrificial film protects the dielectric and optional organic adhesion promoter from modification/consumption during the subsequent ashing step during which the polymeric film is removed.
摘要翻译：本文提供了具有最小化学计量变化的有机硅酸盐玻璃层间介电材料和任选的用于半导体器件的完整有机粘合促进剂的互连结构。互连结构能够提供改进的器件性能，功能性和可靠性，因为与常规使用的那些相比，堆叠的有效介电常数降低，因为使用沉积在电介质上的牺牲聚合物材料和任选的有机粘合促进剂在灰化图案材料之前完成的阻挡层开口步骤。该牺牲膜在后续的灰化步骤期间保护电介质和任选的有机粘合促进剂免于修饰/消耗，在此期间除去聚合物膜。

13. 发明申请

US20070040276A1 Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application 有权
标题翻译：采用埋入导电层的特征，用于电抗保险丝应用的电介质
公开(公告)号：US20070040276A1
公开(公告)日：2007-02-22
申请号：US11207218
申请日：2005-08-19
申请人： Chih-Chao Yang , Lawrence Clevenger , Timothy Dalton , Nicholas Fuller , Louis Hsu
发明人： Chih-Chao Yang , Lawrence Clevenger , Timothy Dalton , Nicholas Fuller , Louis Hsu
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L23/5252 , H01L21/76843 , H01L21/76844 , H01L2924/0002 , H01L2924/00
摘要： An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.
摘要翻译：提供了一种抗熔丝结构，其包括掩埋的导电的，例如作为反熔丝材料的金属层以及形成这种抗熔丝结构的方法。根据本发明，本发明的抗熔丝结构包括互连之间的漏电介质区域。当两个相邻的互连被偏置时，这些原始互连之间的电阻开始减小，并且引起时间依赖介质击穿TDDB现象。也可以通过增加局部温度来加速相邻互连之间的电阻的降低。

14. 发明申请

US20060154086A1 Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics 有权
标题翻译：多层硬掩模方案，用于SiCOH电介质的无损双重镶嵌加工
公开(公告)号：US20060154086A1
公开(公告)日：2006-07-13
申请号：US11034480
申请日：2005-01-13
申请人： Nicholas Fuller , Stephen Gates , Timothy Dalton
发明人： Nicholas Fuller , Stephen Gates , Timothy Dalton
IPC分类号： B32B17/06 , B32B9/00 , H01L21/302
CPC分类号： H01L21/0331 , H01L21/76811 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/12576 , Y10T428/12611 , Y10T428/31667 , H01L2924/00
摘要： Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.
摘要翻译：具有用于90nm以上的有机硅酸盐玻璃基材料的互连结构，其中描述了使用线路优先方法的多层硬掩模的BEOL技术。本发明的互连结构实现了相应的改进的器件/互连性能，并且由于不暴露OSG材料以抵抗去除等离子体以及由于交替的无机/有机多层硬掩模堆叠而提供了实质的双镶嵌工艺窗口。后一特征意味着对于在特定蚀刻步骤期间被蚀刻的每个无机层，该领域中相应的图案转移层是有机的，反之亦然。

15. 发明申请

US20070072412A1 PREVENTING DAMAGE TO INTERLEVEL DIELECTRIC 审中-公开
标题翻译：防止对交流电介质的损害
公开(公告)号：US20070072412A1
公开(公告)日：2007-03-29
申请号：US11162883
申请日：2005-09-27
申请人： Derren Dunn , Nicholas Fuller , Catherine Labelle , Vincent McGahay , Sanjay Mehta , Henry Nye III
发明人： Derren Dunn , Nicholas Fuller , Catherine Labelle , Vincent McGahay , Sanjay Mehta , Henry Nye III
IPC分类号： H01L21/4763 , H01L21/311
CPC分类号： H01L21/31138 , H01L21/02118 , H01L21/02123 , H01L21/02203 , H01L21/02274 , H01L21/02282 , H01L21/31116 , H01L21/31608 , H01L21/76831
摘要： Prevention of damage to an interlevel dielectric (ILD) is provided by forming an opening (e.g., trench) in the ILD, and sputtering a dielectric film onto a sidewall of the opening by overetching into a layer of the dielectric below or within the ILD during forming of the opening. The re-sputtered film protects the sidewall of the opening from subsequent plasma/ash processes and seals the porous dielectric surface along the sidewall and bottom without impacting overall process throughput. A semiconductor structure resulting from the above process is also disclosed.
摘要翻译：通过在ILD中形成开口（例如，沟槽）来提供对层间电介质（ILD）的损坏的防止，并且通过在ILD内或在ILD内过度蚀刻到电介质层中，将电介质膜溅射到开口的侧壁上形成开口。再溅射的膜保护开口的侧壁不受后续的等离子体/灰分过程的影响，并且沿着侧壁和底部密封多孔电介质表面，而不影响整个工艺流程。还公开了由上述方法得到的半导体结构。

16. 发明申请

US20070043742A1 Systems and methods for building and implementing ontology-based information resources 有权
标题翻译：构建和实现基于本体的信息资源的系统和方法
公开(公告)号：US20070043742A1
公开(公告)日：2007-02-22
申请号：US11204726
申请日：2005-08-16
申请人： Juan Arguello , Youssef Drissi , Nicholas Fuller , Ijeoma Nnebe , Daby Sow
发明人： Juan Arguello , Youssef Drissi , Nicholas Fuller , Ijeoma Nnebe , Daby Sow
IPC分类号： G06F7/00
CPC分类号： G06F17/30734
摘要： Systems and methods are provided for building and implementing ontology-based information resources. More specifically, multi-user collaborative, semi-automatic systems and methods are provided for constructing ontology-based information resources that are shared by a community of users, wherein ontology categories evolve over time based on categorization rules that are specified by the community of users as well as categorization rules that are automatically learned from knowledge obtained as a result of multi-user interactions and categorization decisions.
摘要翻译：提供了构建和实现基于本体的信息资源的系统和方法。更具体地，提供了多用户协作，半自动系统和方法，用于构建由用户社区共享的基于本体的信息资源，其中本体类别随着时间推移基于由用户社区指定的分类规则以及根据多用户交互和分类决策所获得的知识自动学习的分类规则。

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