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11. 发明申请

US20080259680A1 Memory Element and Method for Manufacturing Same 失效
标题翻译：记忆元素及其制造方法
公开(公告)号：US20080259680A1
公开(公告)日：2008-10-23
申请号：US11575091
申请日：2005-11-04
申请人： Hiroyuki Nishide , Kenji Honda , Yasunori Yonekuta , Takashi Kurata , Shigemoto Abe
发明人： Hiroyuki Nishide , Kenji Honda , Yasunori Yonekuta , Takashi Kurata , Shigemoto Abe
IPC分类号： G11C11/34 , H01S4/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/15 , H01L27/285 , H01L51/0595 , Y10T29/49002
摘要： A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.
摘要翻译：一种新颖的非易失性存储元件，其可以通过使用有机材料通过简单且高收率的方法制造并具有高的开/关比率，以及制造这种非易失性存储元件的方法。在阳极层（12）和阴极层（16）之间设置由绝缘自由基聚合物构成的开关层（14）。此外，在开关层（14）和阳极层（12）之间设置有空穴注入传输层（13），以及在开关层（14）和阴极层（16）之间的电子注入传输层（15））。在切换层和相邻层之间设置中间层。自由基聚合物优选为氮氧自由基聚合物。通过湿法堆叠形成开关层（14），空穴注入传输层（13）和电子注入传输层（15）。

12. 发明授权

US07365949B2 CPP giant magnetoresistive head including pinned magnetic layer that extends in the height direction 有权
标题翻译： CPP巨磁阻头包括在高度方向上延伸的钉扎磁性层
公开(公告)号：US07365949B2
公开(公告)日：2008-04-29
申请号：US11141543
申请日：2005-05-31
申请人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
发明人： Yasuo Hayakawa , Yoshihiro Nishiyama , Digo Aoki , Masamichi Saito , Naohiro Ishibashi , Kenji Honda
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/39 , G11B5/3163 , G11B5/398
摘要： A CPP giant magnetoresistive head includes a lower shield layer; an upper shield layer; and a giant magnetoresistive element (GMR) between the lower shield layer and the upper shield layer. The GMR includes a nonmagnetic material layer; a pinned magnetic layer; and a free magnetic layer. The pinned layer and the free layer are laminated with the nonmagnetic layer provided therebetween. A current flows perpendicularly to a film plane of the GMR, the pinned magnetic layer extends in the height direction longer than in a track-width direction and includes a first portion in the GMR. The first portion is disposed above or below the nonmagnetic layer and the free layer. A second portion is behind the nonmagnetic layer and the free layer in the height direction. The first and second portions are in the same plane. The width of the pinned layer in the track-width direction in the first portion is greater than that in the second portion.
摘要翻译： CPP巨磁阻头包括下屏蔽层; 上屏蔽层; 和在下屏蔽层和上屏蔽层之间的巨磁阻元件（GMR）。 GMR包括非磁性材料层; 钉扎磁性层; 和自由磁性层。被钉扎层和自由层与其间设置的非磁性层层叠。 A电流垂直于GMR的膜平面流动，被钉扎的磁性层在高度方向上比在轨道宽度方向上延伸更长，并且包括GMR中的第一部分。第一部分设置在非磁性层和自由层的上方或下方。第二部分在非磁性层的后面，高度方向上是自由层。第一和第二部分在同一平面内。第一部分中的钉扎宽度方向上的被钉扎层的宽度大于第二部分的宽度。

13. 发明申请

US20050106833A1 Semiconductor device having metal silicide layer on source/drain region and gate electrode and method of manufacturing the same 有权
标题翻译：在源极/漏极区域上具有金属硅化物层和栅电极的半导体器件及其制造方法
公开(公告)号：US20050106833A1
公开(公告)日：2005-05-19
申请号：US10837748
申请日：2004-05-04
申请人： Hisato Oyamatsu , Kenji Honda
发明人： Hisato Oyamatsu , Kenji Honda
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L21/76 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L27/02 , H01L27/04 , H01L27/088 , H01L29/78 , H01L21/00 , H01L21/44 , H01L21/4763 , H01L21/84
CPC分类号： H01L21/28568 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L27/0207 , H01L29/665 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, an element-isolating region formed in the semiconductor substrate, a real element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof, and a dummy element region formed in the semiconductor substrate and outside the element-isolating region and having a metal silicide layer formed on the surface thereof. The ratio of the sum of pattern areas of the real element region and dummy element region occupied in a 1 μm-square range of interest including the element region is 25% or more.
摘要翻译：半导体器件包括半导体衬底，形成在半导体衬底中的元件隔离区域，形成在半导体衬底中并在元件隔离区域外部并且在其表面上形成有金属硅化物层的真实元件区域，以及虚拟元件元件区域形成在半导体衬底中并且在元件隔离区域外部并且在其表面上形成有金属硅化物层。在包括元件区域的1个平均兴趣范围内占有的实数元素区域和虚设元素区域的图案区域之和的比率为25％以上。

14. 发明授权

US06349021B1 Thin film magnetic head 失效
标题翻译：薄膜磁头
公开(公告)号：US06349021B1
公开(公告)日：2002-02-19
申请号：US09481452
申请日：2000-01-11
申请人： Kenji Honda
发明人： Kenji Honda
IPC分类号： G11B539
CPC分类号： G11B5/3967 , G11B5/3113 , G11B5/3116 , G11B5/313 , G11B5/3903
摘要： A thin film magnetic head is able to control occurrence of Barkhausen noises attributable to configuration magnetic anisotropy of an upper shield layer. An inductive head is provided with a magnetic material layer having a space for forming a coil layer thereon. A very narrow gap is provided between a front separate layer that opposes a magnetic recording medium and a rear separate layer that opposes the front separate layer. The front separate layer serves also as an upper shield layer of an MR head and a lower core layer of the inductive head.
摘要翻译：薄膜磁头能够控制由于上屏蔽层的配置磁各向异性引起的巴克豪森噪声的发生。感应头设置有具有用于在其上形成线圈层的空间的磁性材料层。在与磁记录介质相对的前分离层和与前分离层相对的后分离层之间提供非常窄的间隙。前分离层还用作MR头的上屏蔽层和感应头的下芯层。

15. 发明授权

US06263565B1 Method of manufacturing a substrate having electrode arcs for connecting to surface-mounted electronic parts and substrate manufactured by same 失效
标题翻译：制造具有用于连接到由表面安装的电子部件和由其制造的基板的电极弧的基板的方法
公开(公告)号：US06263565B1
公开(公告)日：2001-07-24
申请号：US09103392
申请日：1998-06-24
申请人： Masashi Gotoh , Jitsuo Kanazawa , Syuichiro Yamamoto , Kenji Honda
发明人： Masashi Gotoh , Jitsuo Kanazawa , Syuichiro Yamamoto , Kenji Honda
IPC分类号： H01K310
CPC分类号： H05K3/403 , H05K3/0052 , H05K3/3442 , H05K3/42 , H05K2201/09181 , Y10T29/49155 , Y10T29/49165 , Y10T29/49789 , Y10T29/49792
摘要： A through hole 5 formed in a substrate and having an electrode film on an inner surface thereof is cut and divided into two through holes or blind holes each of substantially semicircular arc shape through dicing processing using a rotating blade, and one of the-divided through holes 5 of substantially semicircular arc shape is used as an external connection terminal 3 of substantially semicircular concave arc shape thereby to form a surface mounted electronic parts having a plurality of the external connection terminals 3. The height H of the substantially semicircular arc formed at an inner surface of each of the external connection terminals is set to be equal to or smaller than a value obtained by subtracting twice a thickness t of the electrode film from a radius R of a curvature of the arc.
摘要翻译：形成在基板中并且在其内表面上具有电极膜的通孔5通过使用旋转叶片的切割处理被分割成基本上半圆弧形的两个通孔或盲孔，并且其中一个分割通孔使用大致半圆弧形的孔5作为大致半圆形的凹弧形状的外部连接端子3，从而形成具有多个外部连接端子3的表面安装的电子部件。大致半圆弧的高度H形成在每个外部连接端子的内表面被设定为等于或小于从电弧曲率的半径R减去电极膜的厚度t的两倍所获得的值。

16. 发明授权

US6033993A Process for removing residues from a semiconductor substrate 失效
标题翻译：从半导体衬底去除残留物的方法
公开(公告)号：US6033993A
公开(公告)日：2000-03-07
申请号：US936035
申请日：1997-09-23
申请人： M. Lee Love, Jr. , Kenji Honda
发明人： M. Lee Love, Jr. , Kenji Honda
IPC分类号： C11D3/00 , C11D7/10 , C11D7/26 , C11D7/32 , C11D11/00 , G03F7/42 , H01L21/02 , H01L21/304 , H01L21/3213 , H01L21/3105 , H01L21/312
CPC分类号： C11D7/06 , C11D11/0047 , C11D3/0073 , C11D7/105 , C11D7/265 , C11D7/3245 , G03F7/422 , G03F7/425 , H01L21/0206 , H01L21/02071 , H01L21/31133 , H01L21/31138 , H01L21/32135
摘要： A process of treating a substrate having photoresist applied thereto, comprising the steps of:(a) removing said photoresist from said substrate by a method selected from the group consisting of photoresist stripping, plasma etch residue cleaning, or a combination thereof; and(b) rinsing said substrate with a non-corrosive rinsing composition comprising(1) water; and(2) one or more water-soluble corrosion inhibitors selected from the group consisting essentially of hydroxylamine, at least one hydroxylammonium salt, at least one water-soluble organic acid, at least one amino acid, and combinations thereof.
摘要翻译：一种处理具有光刻胶施加到其上的基板的方法，包括以下步骤：（a）通过选自光致抗蚀剂剥离，等离子蚀刻残渣清洗或其组合的方法从所述基板上去除所述光致抗蚀剂; 和（b）用非腐蚀性漂洗组合物冲洗所述基材，所述组合物包含（1）水; 和（2）一种或多种选自羟胺，至少一种羟基铵盐，至少一种水溶性有机酸，至少一种氨基酸及其组合的水溶性腐蚀抑制剂。

17. 发明授权

US5561105A Chelating reagent containing photoresist stripper composition 失效
标题翻译：螯合剂含有光刻胶剥离剂组合物
公开(公告)号：US5561105A
公开(公告)日：1996-10-01
申请号：US436550
申请日：1995-05-08
申请人： Kenji Honda
发明人： Kenji Honda
IPC分类号： G03F7/32 , C11D7/32 , C11D7/36 , C11D7/50 , G03F7/42 , C11D3/20 , C11D3/30 , C11D7/26
CPC分类号： C11D7/5013 , C11D7/3218 , C11D7/3245 , C11D7/36 , G03F7/425
摘要： A non-corrosive photoresist composition containing:(a) 20-70% by weight of an organic polar solvent having a dipole moment of more than 3.5;(b) 70-20% by weight of selected amine compounds;(c) an effective amount of a chelating reagent comprising a mono- or poly-valent acid type of ligand covalently attached to a polymeric or oligomeric backbone; and(d) optionally 0-10% by weight of selected amino acid having a hydroxyl group.
摘要翻译：一种非腐蚀性光致抗蚀剂组合物，其含有：（a）20-70重量％偶极矩大于3.5的有机极性溶剂; （b）70-20重量％的选择的胺化合物; （c）有效量的螯合剂，其包含共价连接到聚合物或低聚骨架上的单价或多价酸型配体; 和（d）任选地0-10重量％的选择的具有羟基的氨基酸。

18. 发明授权

US5550004A Chemically amplified radiation-sensitive composition 失效
标题翻译：化学放大的辐射敏感组合物
公开(公告)号：US5550004A
公开(公告)日：1996-08-27
申请号：US292899
申请日：1994-08-19
申请人： Kenji Honda
发明人： Kenji Honda
IPC分类号： C08F12/22 , C08F12/00 , C08F12/24 , C08G8/28 , C08G8/30 , C08G8/38 , C08L25/00 , C08L25/18 , C08L61/00 , C08L61/04 , C09K13/06 , G03F7/004 , G03F7/023 , G03F7/039 , H01L21/027
CPC分类号： C08G8/38 , G03F7/0045 , G03F7/0233 , G03F7/0392 , Y10S430/106
摘要： A chemically amplified-type radiation-sensitive composition comprising:(a) an alkali-soluble binder resin made by a condensation reaction of:(i) hydroxystyrene moiety having formula [1] or [2]: ##STR1## wherein x is an integer from 2 to 300; with (ii) a monomethylolated phenolic compound having a formula [8]: ##STR2## wherein R.sub.1 and R.sub.2 are individually selected from the group consisting of lower alkyl group having 1-4 carbon atoms, lower alkoxy group having 1-4 carbon atoms, amino group, and carboxylic acid group; wherein R.sub.3 and R.sub.4 are individually selected from the group consisting of hydrogen, lower alkyl group having 1-4 carbon atoms, lower alkoxy groups having 1-4 carbon atoms, an amino group, and a carboxylic group; and wherein a mole ratio of the hydroxystyrene moiety to the monomethylolated phenolic compound is from about 1:10 to about 10:1;(b) at least one alkaline dissolution inhibitor containing acid-cleavable groups; and(c) at least one compound that results in generation of an acidic moiety under irradiation.
摘要翻译：一种化学放大型辐射敏感性组合物，其包含：（a）通过以下缩合反应制备的碱溶性粘合剂树脂：（i）具有式[1]或[2]的羟基苯乙烯部分： > [2]其中x是2至300的整数; 与（ii）具有式[8]的单羟基化酚类化合物：其中R 1和R 2分别选自具有1-4个碳原子的低级烷基，具有1-4个碳原子的低级烷氧基碳原子，氨基和羧酸基团; 其中R3和R4分别选自氢，具有1-4个碳原子的低级烷基，具有1-4个碳原子的低级烷氧基，氨基和羧基; 并且其中羟基苯乙烯部分与单羟甲基化酚类化合物的摩尔比为约1:10至约10:1; （b）至少一种含有酸可裂解基团的碱性溶解抑制剂; 和（c）至少一种导致在照射下产生酸性部分的化合物。

19. 发明授权

US5545353A Non-corrosive photoresist stripper composition 失效
标题翻译：非腐蚀性光致抗蚀剂剥离剂组合物
公开(公告)号：US5545353A
公开(公告)日：1996-08-13
申请号：US436548
申请日：1995-05-08
申请人： Kenji Honda , Taishih Maw
发明人： Kenji Honda , Taishih Maw
IPC分类号： C11D7/32 , C11D7/34 , C11D7/50 , G03F7/42 , G03C5/00 , G03C11/12
CPC分类号： C11D7/5009 , G03F7/422 , G03F7/425 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3227 , C11D7/34
摘要： A non-corrosive photoresist composition containing:(a) 20-70% by weight of an organic polar solvent having a dipole moment of more than 3.5;(b) 70-20% by weight of selected amine compounds;(c) 0.1-10% by weight of (2-benzothiozolylthio)succinic acid.
摘要翻译：一种非腐蚀性光致抗蚀剂组合物，其含有：（a）20-70重量％偶极矩大于3.5的有机极性溶剂; （b）70-20重量％的选择的胺化合物; （c）0.1-10重量％的（2-苯并噻唑硫基）琥珀酸。

20. 发明授权

US5446125A Method for removing metal impurities from resist components 失效
标题翻译：从抗蚀剂成分中除去金属杂质的方法
公开(公告)号：US5446125A
公开(公告)日：1995-08-29
申请号：US753488
申请日：1991-09-03
申请人： Kenji Honda , Edward A. Fitzgerald , Lawrence Ferreira
发明人： Kenji Honda , Edward A. Fitzgerald , Lawrence Ferreira
IPC分类号： C08F6/06 , C08F6/08
CPC分类号： C08F6/06
摘要： A method of removing metal impurities from a resist component, comprising the steps of:(a) dissolving said resist component in a solvent;(b) contacting said resist component solution with a cation exchange resin and a chelate resin for a sufficient amount of time to absorb at least a portion of said metal impurities onto said cation exchange and chelate resins; and(c) separating said cation exchange and chelate resins bearing said metal impurities from said resist component solution.
摘要翻译：一种从抗蚀剂成分除去金属杂质的方法，包括以下步骤：（a）将所述抗蚀剂组分溶解在溶剂中; （b）使所述抗蚀剂组分溶液与阳离子交换树脂和螯合树脂接触足够的时间以将至少一部分所述金属杂质吸收到所述阳离子交换和螯合树脂上; 和（c）从所述抗蚀剂组分溶液中分离所述含有所述金属杂质的阳离子交换和螯合树脂。

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