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11. 发明授权

US4726738A Motor-driven compressor provided with torque control device 失效
标题翻译：电动压缩机配有转矩控制装置
公开(公告)号：US4726738A
公开(公告)日：1988-02-23
申请号：US817670
申请日：1986-01-10
申请人： Yozo Nakamura , Naoyuki Tanaka , Shigeru Machida , Akira Arai , Yoshihisa Uneyama , Kazuo Ikeda , Akihiko Ishiyama , Takeoshi Katoh , Tunehiro Endo , Hiroaki Hata
发明人： Yozo Nakamura , Naoyuki Tanaka , Shigeru Machida , Akira Arai , Yoshihisa Uneyama , Kazuo Ikeda , Akihiko Ishiyama , Takeoshi Katoh , Tunehiro Endo , Hiroaki Hata
IPC分类号： F04B49/06 , F04B49/20 , H02P5/28
CPC分类号： F04C18/3564 , F04B49/065 , F04B49/20 , F04C2270/80
摘要： A motor-driven compressor used as a compressor or high-pressure gas generator for a refrigerating cycle, in which the output torque of the electric motor for driving the compressor is controlled so as to make the output torque agree with the load torque required for performing compression in any revolutional angular position of the driving main shaft to thereby reduce revolutional torsional vibrations caused by disagreement between the load torque and the output torque.
摘要翻译：用作用于制冷循环的压缩机或高压气体发生器的电动压缩机，其中控制用于驱动压缩机的电动机的输出转矩，以使输出转矩与执行所需的负载转矩一致在驱动主轴的任意旋转角位置压缩，从而减小由负载转矩和输出转矩之间的不一致引起的旋转扭转振动。

12. 发明授权

US4120488A Stamping apparatus for applying lining material to iron runners 失效
标题翻译：冲压装置，用于将衬里材料应用于铁流道
公开(公告)号：US4120488A
公开(公告)日：1978-10-17
申请号：US871481
申请日：1978-01-19
申请人： Motohiko Iizuka , Hiroyuki Danjo , Kazuo Ikeda , Masatoshi Yoshimura
发明人： Motohiko Iizuka , Hiroyuki Danjo , Kazuo Ikeda , Masatoshi Yoshimura
IPC分类号： B06B1/18 , B22D35/00 , C21B7/14 , F27D1/16 , C21B7/00
CPC分类号： C21B7/14 , F27D1/1626
摘要： A stamping apparatus for applying a lining material to an iron runner comprising:Arm means mounted at the base thereof to a travelling device and including a base member vertically mounted to one end thereof, said arm means further including a link mechanism and a swivelling mechanism, whereby said arm means is adapted to vertically and horizontally move said base member;A balancing cylinder vertically supported on said base member through the intermediary of turning means, said balancing cylinder holding therein a piston by upper and lower cylinder chambers, said balancing cylinder including compressed air inlet means, setting regulator means and main control regulator means for maintaining the pressure in each of said cylinder chambers at a setting pressure and a piston rod whereby maintaining constant the pressing force of at least one rammer mounted to one end of said piston rod, said balancing cylinder being rotatable so as to be held horizontally as well as in an inclined position; andSaid at least one rammer mounted to said piston rod in parallel with said balancing cylinder.
摘要翻译：一种用于将衬里材料施加到铁流道运动器的冲压装置，包括：

13. 发明授权

US08033793B2 Impeller 有权
标题翻译：叶轮
公开(公告)号：US08033793B2
公开(公告)日：2011-10-11
申请号：US11889160
申请日：2007-08-09
申请人： Kazuo Ikeda , Yasutaka Okuda , Ryouhei Adachi , Satoshi Maruyama , Satoshi Hoshino
发明人： Kazuo Ikeda , Yasutaka Okuda , Ryouhei Adachi , Satoshi Maruyama , Satoshi Hoshino
IPC分类号： B21D53/78
CPC分类号： F04D29/20 , B29C45/14065 , B29C45/1459 , B29C45/842 , B29L2031/08 , F04D29/026 , F04D29/2227 , F05D2300/10 , F05D2300/44 , Y10T29/49316 , Y10T29/49325 , Y10T29/49329
摘要： The present invention provides an impeller in which a metallic bush can be inserted correctly into a synthetic resin impeller main body manufactured by resin molding using a die, and a determination as to whether or not the impeller has been manufactured correctly can be made easily. The impeller comprises: a metallic bush comprising a circumferential boss portion having a substantially truncated cone-shaped throttle portion positioned on a front surface axial end side, a periaxial support boss portion positioned in an axial center, and a circumferential protruding portion positioned on a back surface axial end side; and an impeller main body made of synthetic resin and formed with a V-shaped bulging portion that bulges axially in the center of a front surface side of a disk-shaped vane portion fulcrum, in which a plurality of vanes are formed integrally on the periphery of the V-shaped bulging portion. An outer diameter of the circumferential protruding portion of the bush is formed to be smaller than an outer diameter of an axial end location of the throttle portion, the circumferential protruding portion is positioned on a back surface side of the V-shaped bulging portion, and the bush is inserted into the V-shaped bulging portion.
摘要翻译：本发明提供一种叶轮，其中可以将金属衬套正确地插入到通过使用模具的树脂成型制造的合成树脂叶轮主体中，并且可以容易地确定是否正确地制造了叶轮。叶轮包括：金属衬套，其包括周向凸台部分，其具有位于前表面轴向端侧的基本上截头圆锥形的节流部分，位于轴向中心的轴向支撑凸台部分和位于背面的周向突出部分表面轴向端面; 以及由合成树脂制成的叶轮主体，其形成有V形凸起部，该V形凸出部在圆盘形叶片部支点的前表面侧的中心轴向凸出，其中多个叶片一体地形成在周边的V形凸出部分。衬套的周向突出部的外径形成为小于节流部的轴向端部的外径，周向突出部位于V形凸出部的背面侧，衬套插入到V形凸出部分中。

14. 发明授权

US07934908B2 Impeller manufacturing method and impeller 有权
标题翻译：叶轮制造方法和叶轮
公开(公告)号：US07934908B2
公开(公告)日：2011-05-03
申请号：US11889161
申请日：2007-08-09
申请人： Kazuo Ikeda , Yasutaka Okuda , Satoshi Maruyama , Ryouhei Adachi
发明人： Kazuo Ikeda , Yasutaka Okuda , Satoshi Maruyama , Ryouhei Adachi
IPC分类号： F01D5/14
CPC分类号： B29C45/38 , B29C45/1459 , B29C45/2708 , B29L2031/087 , F04D29/023 , F04D29/281 , F05D2300/43 , Y10T29/49316
摘要： The present invention provides a manufacturing method for an impeller with which molding and high-quality finishing can be performed extremely easily and quickly through resin molding using a die, and an impeller manufactured by the impeller manufacturing method. A metallic bush is disposed in a die, whereupon a resin material is injected through a gate in the die. A connecting portion between an unnecessary resin portion formed from residual resin material in the gate and a resin impeller main body molded around the bush is formed to be thin, and the unnecessary resin portion is removed from the impeller main body using pushing or withdrawing means.
摘要翻译：本发明提供一种用于叶轮的制造方法，通过使用模具的树脂成形以及通过叶轮制造方法制造的叶轮，能够非常容易且快速地进行成型和高质量的整理。金属衬套设置在模具中，于是树脂材料通过模具中的浇口注入。由浇口中的残留树脂材料形成的不需要的树脂部分和围绕衬套模制的树脂叶轮主体之间的连接部分形成为薄而不必要的树脂部分通过推压或取出装置从叶轮主体移除。

15. 发明申请

US20090108960A1 Surface Acoustic Wave Resonator, and Surface Acoustic Wave Filter 有权
标题翻译：表面声波谐振器和表面声波滤波器
公开(公告)号：US20090108960A1
公开(公告)日：2009-04-30
申请号：US10580915
申请日：2005-01-06
申请人： Tsutomu Igaki , Kazunori Nishimura , Kazuo Ikeda , Ken Matsunami
发明人： Tsutomu Igaki , Kazunori Nishimura , Kazuo Ikeda , Ken Matsunami
IPC分类号： H03H9/64
CPC分类号： H03H9/14544 , H03H9/14582 , H03H9/6483
摘要： A surface acoustic wave resonator has piezoelectric substrate (11), IDT (13) formed of a plurality of electrode fingers (12) disposed on piezoelectric substrate (11), and reflectors (14) disposed near the opposite ends of IDT (13). IDT (13) has a gradation region where the electrode finger pitch of the plurality of electrode fingers (12) at the opposite ends is different from the electrode finger pitch near the center of IDT (13). In this gradation region, the electrode finger pitches are sequentially varied in the range from the electrode finger at the farthest end that is one end of the gradation region to the electrode finger lying at the other end of the gradation region. The electrode finger pitch of the electrode fingers at the farthest end that is one end of the gradation region is set to be 1 through 5% smaller than the electrode finger pitch near the center of IDT (13).
摘要翻译：表面声波谐振器具有压电基板（11），由设置在压电基板（11）上的多个电极指（12）形成的IDT（13）和设置在IDT（13）的相对端附近的反射器（14）。 IDT（13）具有灰色区域，其中在相对端的多个电极指（12）的电极指间距与IDT（13）中心附近的电极指间距不同。在该灰度区域中，电极指间隔在从作为灰度区域的一端的最远端的电极指与位于灰度区域的另一端的电极指的范围内依次变化。作为灰度区域的一端的最远端的电极指的电极指间距设定为比IDT（13）的中心附近的电极指间隔小1〜5％。

16. 发明授权

US07482895B2 Surface acoustic wave filter 有权
标题翻译：表面声波滤波器
公开(公告)号：US07482895B2
公开(公告)日：2009-01-27
申请号：US10563281
申请日：2004-07-28
申请人： Tsutomu Igaki , Kazuo Ikeda , Akio Tsunekawa
发明人： Tsutomu Igaki , Kazuo Ikeda , Akio Tsunekawa
IPC分类号： H03H9/64 , H03H9/25
CPC分类号： H03H9/6483 , H03H9/0274 , H03H9/14588
摘要： A saw filter of the invention has a piezoelectric substrate (11), plural numbers of IDT electrodes (12,13) arranged on a surface of the piezoelectric substrate (11) as well as on a first surface acoustic wave propagation path, reflector electrodes (14,15) arranged at least at both ends of a first electrode pattern formed including the plural IDT electrodes (12,13), one or more IDT electrodes (16) arranged on the surface of the piezoelectric substrate (11) as well as on a second surface acoustic wave propagation path which is different from the first surface acoustic wave propagation path and reflector electrodes arranged at least at both sides of a second electrode pattern formed including the IDT electrode (16), in which the IDT electrodes (12,13) on the first surface acoustic wave propagation path are electrically connected in series by connecting wirings (19) and the IDT electrode (16) on the second surface acoustic wave propagation path is connected between the connecting wirings (19) and the ground (20), which are arranged between the first electrode pattern and the second electrode pattern. According to this, the chip size can be made small.
摘要翻译：本发明的锯屑过滤器具有压电基板（11），多个设置在压电基板（11）的表面上的IDT电极（12,13）以及第一声表面波传播路径，反射器电极至少布置在形成有包括多个IDT电极（12,13）的第一电极图案的两端，布置在压电基板（11）的表面上的一个或多个IDT电极（16）与第一表面声波传播路径不同的第二表面声波传播路径和至少布置在包括IDT电极（16）的第二电极图案的两侧的反射器电极，其中IDT电极（12,13 ）在第一声表面波传播路径上通过连接布线（19）串联电连接，并且第二声表面波传播路径上的IDT电极（16）连接在连接布线（ 19）和布置在第一电极图案和第二电极图案之间的接地（20）。据此，可以使芯片尺寸小。

17. 发明申请

US20080018417A1 Surface Acoustic Wave Resonator and Surface Acoustic Wave Filter Using the Same 有权
标题翻译：表面声波谐振器和使用其的表面声波滤波器
公开(公告)号：US20080018417A1
公开(公告)日：2008-01-24
申请号：US11587538
申请日：2005-04-21
申请人： Tsutomu Igaki , Shun-ichi Seki , Kazuo Ikeda
发明人： Tsutomu Igaki , Shun-ichi Seki , Kazuo Ikeda
IPC分类号： H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/02559 , H03H9/6433 , H03H9/6496
摘要： A Q-factor of a resonator at a high frequency is improved. An insertion loss of a filter using such a resonator and steepness of the filter are improved. A plurality of surface acoustic wave resonators including an interdigital transducer and reflecting electrodes provided on both sides thereof are connected in parallel on a piezoelectric substrate. Resonance frequencies of the surface acoustic wave resonators are rendered equal among all the resonators connected in parallel. In this way, Q-factor of resonance can be improved. A surface acoustic wave filter using such surface acoustic wave resonators is formed in order to improve the insertion loss and the steepness.
摘要翻译：提高高频谐振器的Q因子。使用这种谐振器的滤波器的插入损耗和滤波器的陡度得到改善。包括叉指式换能器和设置在其两侧的反射电极的多个表面声波谐振器并联连接在压电基片上。在所有并联连接的谐振器中，声表面波谐振器的共振频率相等。这样可以提高共振的Q因子。为了提高插入损耗和陡度，形成使用这样的表面声波谐振器的声表面波滤波器。

18. 外观设计

USD433677S Telephone exchanger 失效
公开(公告)号：USD433677S
公开(公告)日：2000-11-14
申请号：US114595
申请日：1999-11-30
申请人： Haruo Tsuge , Kazuo Ikeda , Kentaro Tsuda , Muneyoshi Mikuni
设计人： Haruo Tsuge , Kazuo Ikeda , Kentaro Tsuda , Muneyoshi Mikuni

19. 发明授权

US5998000A Silicon nitride circuit board 失效
标题翻译：氮化硅电路板
公开(公告)号：US5998000A
公开(公告)日：1999-12-07
申请号：US970813
申请日：1997-11-14
申请人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
发明人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
IPC分类号： H01L21/66 , H01L23/15 , H01L23/373 , B32B3/27
CPC分类号： H01L23/3735 , C04B35/5935 , C04B37/021 , C04B37/026 , H01L23/15 , C04B2235/5445 , C04B2235/6565 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C04B2237/122 , C04B2237/368 , C04B2237/407 , C04B2237/70 , H01L22/12 , H01L2224/291 , H01L2224/32225 , H01L2224/83455 , H01L2924/01322 , H01L2924/10253 , Y10T428/24917 , Y10T428/24926
摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.
摘要翻译：本发明提供了一种氮化硅电路板，其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上，其中高导热氮化硅衬底的厚度Ds 并且金属电路板的厚度DM满足关系式Ds 2DM。氮化硅电路板的特征在于，当负载作用在保持在50mm的支撑间隔的电路板的中心部分时，直到氮化硅衬底断裂为止，最大偏转不小于0.6mm。氮化硅电路板的特征在于，当对以50mm的支撑间隔保持的电路板进行防破坏试验时，抗断强度不低于500MPa。金属电路板或电路层通过直接接合法，活性金属钎焊法或金属化法一体接合在氮化硅衬底上。根据具有上述结构的氮化硅电路板，可以获得高导热性和优异的散热特性，并且可以显着提高热循环电阻特性。

20. 发明授权

US5928768A Silicon nitride circuit board 失效
标题翻译：氮化硅电路板
公开(公告)号：US5928768A
公开(公告)日：1999-07-27
申请号：US666467
申请日：1996-09-04
申请人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
发明人： Kazuo Ikeda , Hiroshi Komorita , Yoshitoshi Sato , Michiyasu Komatsu , Nobuyuki Mizunoya
IPC分类号： H01L21/66 , H01L23/15 , H01L23/373 , B32B9/00
CPC分类号： H01L23/3735 , C04B35/5935 , C04B37/021 , C04B37/026 , H01L23/15 , C04B2235/5445 , C04B2235/6565 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C04B2237/122 , C04B2237/368 , C04B2237/407 , C04B2237/70 , H01L22/12 , H01L2224/291 , H01L2224/32225 , H01L2224/83455 , H01L2924/01322 , H01L2924/10253 , Y10T428/24917 , Y10T428/24926
摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.
摘要翻译： PCT No.PCT / JP96 / 00723 Sec。 371日期1996年9月4日 102（e）1996年9月4日PCT PCT 1996年3月19日PCT公布。 WO96 / 29736 PCT公开号日期1996年9月26日本发明提供了一种氮化硅电路板，其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上，其中高的导热氮化硅衬底和金属电路板的厚度DM满足关系式Ds 2DM。氮化硅电路板的特征在于，当负载作用在保持在50mm的支撑间隔的电路板的中心部分时，直到氮化硅衬底断裂为止，最大偏转不小于0.6mm。氮化硅电路板的特征在于，当对以50mm的支撑间隔保持的电路板进行防破坏试验时，抗断强度不低于500MPa。金属电路板或电路层通过直接接合法，活性金属钎焊法或金属化法一体接合在氮化硅衬底上。根据具有上述结构的氮化硅电路板，可以获得高导热性和优异的散热特性，并且可以显着提高热循环电阻特性。

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